STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE ■ ■ ■ ■ ■ VDSS RDS(on) ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED 3 1 TO-220 2 TO-220FP 12 3 I2PAK (Tabless TO-220) DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS ■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION ■ WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP(B)3NC90Z(-1) VDS VDGR VGS Unit STP3NC90ZFP Drain-source Voltage (VGS = 0) 900 V Drain-gate Voltage (RGS = 20 kΩ) 900 V Gate- source Voltage ± 25 V ID Drain Current (continuos) at TC = 25°C 3.5 3.5(*) A ID Drain Current (continuos) at TC = 100°C 2.2 2.2(*) A Drain Current (pulsed) 14 14 A Total Dissipation at TC = 25°C 100 35 W Derating Factor 0.8 0.28 W/°C IDM (● ) PTOT IGS VESD(G-S) Gate-source Current (*) ±50 mA Gate source ESD(HBM-C=100pF, R=15KΩ) 2.5 KV 3 V/ns dv/dt Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature -- 2000 V –65 to 150 °C 150 °C (•)Pulse width limited by safe operating area (1)ISD ≤3.5A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX January 2001 (*).Limited only by maximum temperature allowed 1/11 STP3NC90Z/FP/STB3NC90Z-1 THERMAL DATA Rthj-case TO-220 / I2PAK TO-220FP 1.25 3.57 Thermal Resistance Junction-case Max °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62 °C/W Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 3.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 220 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS IGSS Test Conditions ID = 250 µA, VGS = 0 Min. Typ. Max. 900 ID = 1 mA, VGS = 0 Unit V 1 V/°C Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA Gate-body Leakage Current (VDS = 0) VGS = ±20V ±10 µA Max. Unit ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.75 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. 3 Typ. 4 5 V 3.2 3.5 Ω 3.5 A DYNAMIC Symbol gfs (1) 2/11 Parameter Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 1.75A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 3 S 1250 pF 78 pF 7 pF STP3NC90Z/FP/STB3NC90Z-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. Typ. Max. Unit VDD = 450 V, ID = 1.5 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 28 ns 14 ns VDD = 720V, ID = 3A, VGS = 10V 27 38 nC 8 nC 10 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 720V, ID = 3 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 16 ns 10 ns 18 ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 3.5 A ISDM (2) Source-drain Current (pulsed) 14 A VSD (1) Forward On Voltage ISD = 3 A, VGS = 0 1.6 V ISD = 3 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) ISD Parameter trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions Min. Typ. 712 ns 4450 µC 13 A GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Test Conditions Min. Typ. 25 Max. Unit Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) V αT Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C Rz Dynamic Resistance ID = 50 mA 90 Ω Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/11 STP3NC90Z/FP/STB3NC90Z-1 Safe Operating Area For TO-220 / I²PAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220 / I²PAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics 4/11 STP3NC90Z/FP/STB3NC90Z-1 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/11 STP3NC90Z/FP/STB3NC90Z-1 Source-drain Diode Forward Characteristics 6/11 STP3NC90Z/FP/STB3NC90Z-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/11 STP3NC90Z/FP/STB3NC90Z-1 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/11 L4 P011C STP3NC90Z/FP/STB3NC90Z-1 TO-220FP MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.4 TYP. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 L2 16 0.630 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 L4 9/11 STP3NC90Z/FP/STB3NC90Z-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 10/11 STP3NC90Z/FP/STB3NC90Z-1 Information furnished is believed to be accurate and reliable. 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