STP80NE06-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST P80NE06-10 ■ ■ ■ ■ V DSS R DS(on) ID 60 V <0.01 Ω 80 A TYPICAL RDS(on) = 0.0085 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol V DS Parameter Value Uni t Drain-source Voltage (V GS = 0) 60 V V DGR Drain- gate Voltage (R GS = 20 kΩ) 60 V V GS Gate-source Voltage ± 20 V 80 A o ID Drain Current (continuous) at Tc = 25 C ID o IDM (•) P t ot Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) o Total Dissipation at Tc = 25 C Derating F actor dv/dt T stg Tj Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature (•) Pulse width limited by safe operating area February 1998 57 A 320 A 150 W 1 W/ o C 7 V/ ns -65 to 175 o C 175 o C ( 1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/8 STP80NE06-10 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o 1 62.5 0.5 300 C/W oC/W o C/W o C Max Valu e Unit 80 A 250 mJ AVALANCHE CHARACTERISTICS Symb ol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 30 V) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA Gate-body Leakage Current (V DS = 0) Typ . Max. 60 V GS = 0 Zero G ate Voltage V DS = Max Rating Drain Current (VGS = 0) V DS = Max Rating o C Min. Un it V T c = 125 V GS = ± 20 V 1 10 µA µA ± 100 nA ON (∗) Symb ol Parameter Test Cond ition s ID = 250 µA V GS(th) Gate Threshold Voltage R DS( on) Static Drain-source On V GS = 10V Resistance ID(o n) V DS = VGS Min. Typ . Max. Un it 2 3 4 V 8.5 10 mΩ ID = 40 A On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V 80 A DYNAMIC Symb ol g fs (∗) C iss C oss C rss 2/8 Parameter Test Cond ition s Forward Transconductance V DS > I D(on) x R DS(on) max Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz I D =40 A VGS = 0 Min. Typ . 19 38 7600 890 150 Max. Un it S 10000 1100 200 pF pF pF STP80NE06-10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Typ . Max. Un it t d(on) tr Turn-on Time Rise Time Parameter V DD = 30 V ID = 40 A V GS = 10 V R G =4.7 Ω (see test circuit, figure 3) Test Cond ition s 50 150 65 200 ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 48 V 140 20 50 I D = 80 A Min. V GS = 10 V nC nC nC SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s Min. V DD = 48 V I D = 40 A R G =4.7 Ω VGS = 10 V (see test circuit, figure 5) Typ . Max. Un it 45 75 130 60 100 170 ns ns ns Typ . Max. Un it 80 320 A A 1.5 V SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 80 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100 A/µs I SD = 80 A o Tj = 150 C V DD = 30 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 100 ns 0.4 µC 8 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for Thermal Impedance 3/8 STP80NE06-10 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STP80NE06-10 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STP80NE06-10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STP80NE06-10 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 0.551 L2 16.4 L4 0.645 13.0 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/8 STP80NE06-10 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 8/8