STPS10M80C Power Schottky rectifier Features A1 K ■ High junction temperature capability ■ Optimized trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated package TO-220FPAB – insulated voltage: 2000 V – package capacitance: 45 pF A2 K K A2 A2 A1 K A1 D2PAK STPS10M80CG-TR I2PAK STPS10M80CR K Description This dual diode Schottky rectifier is suited for high frequency switch mode power supply. Packaged in TO-220AB, I2PAK, D2PAK and TO220FPAB, this device is particularly suited for use in notebook, game station, LCD TV and desktop adapters, providing these applications with a good efficiency at both low and high load. Table 1. A1 K A2 A1 K TO-220AB STPS10M80CT TO-220FPAB STPS10M80CFP Electrical characteristics(a) Figure 1. Device summary Symbol IF(AV) 2x5A VRRM 80 V Tj (max) 175 °C VF (typ) 465 mV I V Value A2 "Forward" I 2 x IO X IF VRRM VR VAR IO X V IR VTo VF(Io) VF VF(2xIo) "Reverse" IAR a. VARM and IARM must respect the reverse safe operating area defined in Figure 13. VAR and IAR are pulse measurements (tp < 1 µs). VR, IR, VRRM and VF, are static characteristics April 2011 Doc ID 018734 Rev 1 1/11 www.st.com 11 Characteristics 1 STPS10M80C Characteristics Table 2. Absolute ratings (limiting values, per diode, at Tamb = 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 80 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current, δ = 0.5 Tc = 160 °C Per diode TO-220AB, I2PAK, D2PAK Tc = 160 °C Per device 5 10 Tc = 150 °C Per diode Tc = 140 °C Per device 5 10 TO-220FPAB IFSM Surge non repetitive forward current tp = 10 ms sinusoidal PARM(1) Repetitive peak avalanche power Tc = 25 °C Tj = 25 °C, tp = 1 µs A 150 A 4000 W VARM(2) Maximum repetitive peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 12 A 100 V VASM(2) Maximum single pulse peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 12 A 100 V -65 to +175 °C 175 °C Tstg Tj Storage temperature range Maximum operating junction temperature(3) 1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 13 3. 1 dPtot < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter TO-220AB I2PAK, D2PAK Rth(j-c) Junction to case TO-220FPAB Rth(c) Coupling Value per diode 1.88 per diode 5.90 total 4.75 TO-220AB I2PAK, D2PAK 0.65 TO-220FPAB 3.60 ΔTj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 2/11 3.10 total When the two diodes 1 and 2 are used simultaneously: Doc ID 018734 Rev 1 Unit °C/W °C/W STPS10M80C Table 4. Characteristics Static electrical characteristics (per diode) Symbol Parameter IR(1) Test conditions Tj = 25 °C Reverse leakage current VR = VRRM Tj = 125 °C Tj = 25 °C IF = 2.5 A Tj = 125 °C VF(2) Tj = 25 °C Forward voltage drop IF = 5 A Tj = 125 °C Tj = 25 °C IF = 10 A Tj = 125 °C Min. Typ. Max. Unit - 4 20 µA mA - 3.5 15 - 0.540 0.580 - 0.465 0.495 - 0.640 0.705 - 0.550 0.590 - 0.775 0.850 - 0.635 0.705 V 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.475 x IF(AV) + 0.023 x IF2(RMS) Figure 2. 5 Average forward power dissipation Figure 3. versus average forward current (per diode) PF(AV)(W) 6 δ = 0.05 δ = 0.1 IF(AV)(A) δ=1 δ = 0.5 δ = 0.2 Average forward current versus ambient temperature (δ = 0.5, per diode) Rth(j-a) = Rth(j-c) 5 4 2 4 2 TO-220AB / I PAK / D PAK 3 3 TO-220FPAB 2 2 T 1 1 δ = tp / T IF(AV)(A) tp 0 1 Figure 4. 1 2 3 4 5 6 Tamb(°C) 0 0 0 7 Normalized avalanche power derating versus pulse duration 25 Figure 5. PARM(tp) PARM(1µs) 1.2 50 75 100 125 150 175 Normalized avalanche power derating versus junction temperature PARM(Tj) PARM(25 °C) 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 tp(µs) 0.1 1 10 100 1000 0 25 Doc ID 018734 Rev 1 Tj(°C) 50 75 100 125 150 3/11 Characteristics Figure 6. 100 STPS10M80C Non repetitive surge peak forward current versus overload duration (maximum values, per diode) IM(A) 2 Figure 7. 70 2 Non repetitive surge peak forward current versus overload duration (maximum values, per diode) IM(A) TO-220FPAB TO-220AB / I PAK / D PAK 90 60 80 50 70 60 Tc = 25 °C 50 Tc = 75 °C Tc = 75 °C 30 40 Tc = 125 °C Tc = 125 °C 30 20 20 IM IM 10 t δ = 0.5 10 0 1.E-03 t(s) 1.E-02 Figure 8. 1.0 Tc = 25 °C 40 1.E-01 1.E+00 Relative thermal impedance junction to case versus pulse duration Figure 9. Zth(j-c)/Rth(j-c) 2 1.0 2 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 1.E-01 1.E+00 Relative thermal impedance junction to case versus pulse duration (TO-220FPAB) Zth(j-c)/Rth(j-c) TO-220FPAB 0.9 0.8 0.3 Single pulse Single pulse 0.2 0.1 0.1 tp(s) 0.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 10. Reverse leakage current versus reverse voltage applied (typical values, per diode) 1.E+05 t(s) 1.E-02 TO-220AB / I PAK / D PAK 0.9 0.2 t δ = 0.5 0 1.E-03 0.0 1.E-03 tp(s) 1.E-02 1.E-01 1000 C(pF) F = 1 MHz Vosc = 30 mVRMS Tj = 25 °C Tj = 150 °C Tj = 125 °C 1.E+03 1.E+01 Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode) IR(µA) 1.E+04 1.E+00 Tj = 100 °C 1.E+02 Tj = 75 °C 1.E+01 Tj = 50 °C 100 Tj = 25 °C 1.E+00 VR(V) 1.E-01 0 4/11 10 20 30 40 50 60 70 80 VR(V) 10 1 Doc ID 018734 Rev 1 10 100 STPS10M80C Characteristics Figure 12. Forward voltage drop versus forward current (per diode) 10 Figure 13. Reverse safe operating area (tp < 1 µs and Tj < 150 °C) IFM(A) 12.0 9 8 11.5 11.0 7 10.5 6 Tj = 125 °C (Typical values) 5 10.0 4 9.5 3 Tj = 25 °C (Maximum values) 2 9.0 8.5 1 0 0.0 Iarm (A) Iarm (Varm) 150 °C, 1 µs Tj = 125 °C (Maximum values) VFM(V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 8.0 100 0.9 Varm (V) 105 110 115 120 125 130 135 140 145 150 Figure 14. Thermal resistance junction to ambient versus copper surface under tab for D2PAK 80 Rth(j-a)(°C/W) epoxy printed board copper thickness = 35 µm 70 2 60 D PAK 50 40 30 20 10 2 SCu(cm ) 0 0 5 10 15 20 25 Doc ID 018734 Rev 1 30 35 40 5/11 Package information 2 STPS10M80C Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 5. TO-220AB dimensions Dimensions Ref. Dia Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 C L5 L7 L6 L2 F2 D L9 L4 L2 F M G1 16.4 Typ. 0.645 Typ. L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 E G M Dia. 6/11 Inches A H2 F1 Millimeters Doc ID 018734 Rev 1 2.6 Typ. 3.75 3.85 0.102 Typ. 0.147 0.151 STPS10M80C Package information Table 6. TO-220FPAB dimensions Dimensions Ref. A Millimeters Inches Min. Max. Min. Max. A 4.4 4.9 0.173 0.192 B 2.5 2.9 0.098 0.114 D 2.45 2.75 0.096 0.108 E 0.4 0.7 0.016 0.028 F 0.6 1 0.024 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.7 0.394 0.421 B H Dia. L6 L2 L7 L3 F1 L4 F2 D L2 F E 16 Typ. 0.630 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.7 0.386 0.421 L6 15.8 16.4 0.622 0.646 L7 9 9.9 0.354 0.390 Dia. 2.9 3.5 0.114 0.138 G1 G Doc ID 018734 Rev 1 7/11 Package information Table 7. STPS10M80C D2PAK dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 A E C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm R 0.40 typ. V2 0° 0.016 typ. 8° Figure 15. D2PAK footprint (dimensions in mm) 16.90 10.30 5.08 1.30 8.90 8/11 Doc ID 018734 Rev 1 3.70 0° 8° STPS10M80C Package information Table 8. I2PAK dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.044 0.067 c 0.49 0.70 0.019 0.028 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.195 0.203 E 10 10.40 0.394 0.409 L 13 14 0.512 0.551 L1 3.50 3.93 0.138 0.155 L2 1.27 1.40 0.050 0.055 A E c2 L2 D L1 A1 b1 L b c e e1 Doc ID 018734 Rev 1 9/11 Ordering information 3 STPS10M80C Ordering information Table 9. Ordering information Order code STPS10M80CT STPS10M80CT STPS10M80CFP STPS10M80CFP STPS10M80CR STPS10M80CG-TR 4 Package Weight Base qty Delivery mode TO-220AB 1.9 g 50 Tube TO-220FPAB 2.0 g 50 Tube STPS10M80CR I2 PAK 1.49 g 50 Tube STPS10M80CG 2 1.48 g 1000 Tape and reel D PAK Revision history Table 10. 10/11 Marking Revision history Date Revision 14-Apr-2011 1 Changes First issue. Doc ID 018734 Rev 1 STPS10M80C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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