STTH20L03C High frequency secondary rectifier Datasheet − production data Features ■ Ultrafast, soft and noise-free recovery ■ Low forward voltage drop A1 K A2 Description Dual center tap fast recovery epitaxial diodes suited for switch mode power supply and high frequency DC/DC converters. K Packaged in TO-220AB or D2PAK, this device is especially intended for secondary rectification inside SMPS with high space and power-density. K A1 TO-220AB STTH20L03CT Table 1. June 2012 This is information on a product in full production. Doc ID 023115 Rev 1 A2 A2 A1 D2PAK STTH20L03CG Device summary Symbol Value IF(AV) 2 x 10 A VRRM 300 V Tj -40 to +175 °C VF(max) 0.95 V trr (typ) 26 ns 1/9 www.st.com 9 Characteristics STTH20L03C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) Forward rms current 30 A 10 20 A 150 A Tc = 155 °C Per diode Per device IF(AV) Average forward current, δ = 0.5 IFSM Surge non repetitive forward current Tstg Storage temperature range -65 to + 175 °C Operating junction temperature range -40 to +175 °C Value (max) Unit Tj Table 3. Tc = 150 °C tp = 10 ms sinusoidal Thermal resistance Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Per diode 1.5 Total 1.0 °C/W 0.5 When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 4. Symbol Static electrical characteristics (per diode) Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Typ. Max. Unit 10 VR = VRRM IF = 10 A 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.015 IF2(RMS)) 2/9 Min. Doc ID 023115 Rev 1 µA 10 100 0.95 1.2 0.8 0.95 V STTH20L03C Table 5. Characteristics Dynamic electrical characteristics (per diode) Symbol trr Parameter Test conditions QRR Softness factor Reverse recovery charges VFP Forward recovery voltage Figure 1. Tj = 125 °C IF = 10 A, VR = 200 V dIF/dt = -200 A/µs 55 72 IF = 10 A, VR = 200 V dIF/dt = -200 A/µs 9 12 A Tj = 125 °C 375 nC 200 ns 3.5 V Tj = 125 °C 100.0 δ = 0.05 δ = 0.1 δ = 0.5 δ = 0.2 0.3 250 IF = 10 A, VFR = 1.05 V dIF/dt = 100 A/µs Tj = 25 °C Conduction losses versus average Figure 2. forward current (per diode) 14 ns IF = 10 A, VR = 200 V dIF/dt = -200 A/µs PF(AV)(W) 16 35 Unit 26 Forward recovery time tfr Max. IF = 1 A, VR= 30 V dIF/dt = -100 A/µs Reverse recovery current Sfactor Typ. Tj = 25 °C Reverse recovery time IRM Min. 2.5 Forward voltage drop versus forward current (per diode) IFM(A) δ = 1.0 Tj=125 °C (Maximum values) 12 10.0 Tj=25 °C (Maximum values) Tj=125 °C (Typical values) 10 8 6 1.0 T 4 2 δ=tp/T IF(AV)(A) 0 0 2 Figure 3. 1.0 4 6 8 10 VFM(V) tp 0.1 12 14 0.0 0.2 Relative variation of thermal Figure 4. impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Peak reverse recovery current versus dIF/dt (typical values, per diode) IRM(A) 18 0.9 IF=I F(AV) VR=200 V Tj=125 °C 16 0.8 14 0.7 12 0.6 10 0.5 8 0.4 0.3 6 Single pulse 4 0.2 0.1 0.0 1.E-04 tp(s) 2 dIF/dt(A/µs) 0 1.E-03 1.E-02 1.E-01 1.E+00 0 50 Doc ID 023115 Rev 1 100 150 200 250 300 350 400 450 500 3/9 Characteristics Figure 5. STTH20L03C Reverse recovery time versus dIF/dt Figure 6. (typical values, per diode) trr(ns) 100 400 IF=I F(AV) VR=200 V Tj=125 °C 90 80 Reverse recovery charge versus dIF/dt (typical values, per diode) Q RR(nC) IF=I F(AV) VR=200 V Tj=125 °C 350 300 70 250 60 50 200 40 150 30 100 20 dIF/dt(A/µs) 50 10 dIF/dt(A/µs) 0 0 0 50 100 Figure 7. 150 200 250 300 350 400 450 Reverse recovery softness factor versus dIF/dt (typical values, per diode) SFACTOR 0.8 50 Figure 8. 100 150 200 250 300 350 400 450 500 Relative variation of dynamic parameters versus junction temperature 2.0 IF=I F(AV) VR=200 V Tj=125 °C 0.7 0 500 1.8 IF=I F(AV) VR=200 V Reference: T j=125 °C SFACTOR 1.6 0.6 1.4 0.5 1.2 0.4 1.0 0.8 0.3 IRM 0.6 0.2 0.4 dIF/dt(A/µs) 0.1 0.2 QRR Tj(°C) 0.0 0.0 0 50 Figure 9. 100 150 200 250 300 350 400 450 500 Transient peak forward voltage versus dIF/dt (typical values, per diode) VFP(V) IF=I F(AV) Tj=125 °C 50 75 100 125 Figure 10. Forward recovery time versus dIF/dt (typical values, per diode) 180 14 12 25 tFR(ns) IF=I F(AV) VFR=1.05 V Tj=125 °C 160 140 10 120 100 8 80 6 60 4 40 2 20 dIF/dt(A/µs) 0 4/9 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 0 Doc ID 023115 Rev 1 50 100 150 200 250 300 350 400 450 500 STTH20L03C Characteristics Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode) 1000 Figure 12. Thermal resistance, junction to ambient, versus copper surface under tab (D2PAK) Rth(j-a) (°C/W) C(pF) 80 F=1 MHz VOSC=30 mVRMS Tj=25 °C Printed circuit board FR4, copper thickness: 35 µm 70 D²PAK 60 50 100 40 30 20 10 VR(V) 10 SCu(cm²) 0 1 10 100 1000 0 Doc ID 023115 Rev 1 5 10 15 20 25 30 35 40 5/9 Package information 2 STTH20L03C Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. D2PAK dimensions Dimensions Ref. A E C2 L2 D Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm R V2 0.40 typ. 0° 8° Figure 13. Footprint (dimensions in mm) 16.90 10.30 5.08 1.30 8.90 6/9 Doc ID 023115 Rev 1 3.70 0.016 typ. 0° 8° STTH20L03C Package information D Table 7. TO-220AB dimensions Dimensions Ref. A H2 Dia C L5 L7 Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L6 L2 F2 F1 D L9 L4 F L2 M G1 E G 0.645 typ. L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam. Doc ID 023115 Rev 1 16.4 typ. 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 7/9 Ordering information 3 Ordering information Table 8. 4 Ordering information Order code Marking Package Weight Base qty Delivery mode STTH20L03CT STTH20L03CT TO-220AB 1.9 g 50 Tube STTH20L03CG-TR STTH20L03CG D2PAK 1.48 g 1000 Tape and reel Revision history Table 9. 8/9 STTH20L03C Document revision history Date Revision 22-Jun-2012 1 Changes Initial release. Doc ID 023115 Rev 1 STTH20L03C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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