STMICROELECTRONICS STTH16R04C

STTH16R04C
Ultrafast recovery diode
Main product characteristics
IF(AV)
2X8A
VRRM
400 V
Tj
175° C
VF (typ)
0.9 V
trr (typ)
25 ns
A1
A2
A2
A2
A1
■
Very low switching losses
■
High frequency and/or high pulsed current
operation
■
High junction temperature
■
Insulated package:
– TO-220FPAB
Electrical insulation = 1500 VRMS
Capacitance = 12 pF
Description
K
K
A1
TO-220AB
STTH16R04CT
Features and benefits
TO-220FPAB
STTH16R04CFP
K
A2
A1
D2PAK
STTH16R04CG
Order codes
The STTH16R04C series uses ST's new 400 V
planar Pt doping technology. The STTH16R04C is
specially suited for switching mode base drive and
transistor circuits.
Packaged in through-the-hole and surface mount
packages, this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection.
March 2007
K
Rev 1
Part Number
Marking
STTH16R04CT
STTH16R04CT
STTH16R04CG
STTH16R04CG
STTH16R04CG-TR
STTH16R04CG
STTH16R04CFP
STTH16R04CFP
1/10
www.st.com
Characteristics
STTH16R04C
1
Characteristics
Table 1.
Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
400
V
IF(RMS)
RMS forward current
30
A
TO-220AB / D2PAK
IF(AV)
Average forward current, δ = 0.5
TO-220FPAB
Per diode Tc = 150° C
8
Per device Tc = 145° C
16
Per diode Tc = 125° C
8
Per device Tc = 90° C
16
IFSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
Tstg
Tj
A
120
A
Storage temperature range
-65 to +175
°C
Maximum operating junction temperature range
-40 to +175
°C
Table 2.
Thermal parameters
Symbol
Parameter
TO-220AC / D2PAK
Rth(j-c)
Value
Per diode
2
Per device
1.15
Per diode
4.6
per device
3.8
Per device
0.3
per device
3
Unit
°C/W
Junction to case
TO-220FPAB
TO-220AC /
Rth(c)
D2PAK
Coupling
°C/W
TO-220FPAB
When the diodes are used simultaneously:
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
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STTH16R04C
Characteristics
Table 3.
Symbol
IR(1)
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
Tj = 25° C
Tj = 125° C
Min
Typ
VF(2)
Forward voltage drop
µA
10
100
1.5
IF = 8 A
Tj = 150° C
1.05
1.3
0.9
1.1
V
Tj = 25° C
Tj = 100° C
Unit
10
VR = VRRM
Tj = 25° C
Tj = 100° C
Max
1.75
IF = 16 A
Tj = 150° C
1.25
1.55
1.12
1.37
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 0.83 x IF(AV) + 0.034 x IF2(RMS)
Table 4.
Symbol
Dynamic characteristics
Test conditions
Typ
Max
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
35
50
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25° C
25
35
Reverse recovery current
IF = 8 A, dIF/dt = -200 A/µs,
VR = 320 V, Tj = 125° C
5.5
8
A
S
Softness factor
IF = 8 A, dIF/dt = -200 A/µs,
VR = 320 V, Tj = 125° C
0.4
tfr
Forward recovery time
IF = 8 A, dIF/dt = 100 A/µs
VFR = 1.1 x VFmax, Tj = 25° C
150
ns
Forward recovery voltage
IF = 8 A, dIF/dt = 100 A/µs
Tj = 25° C
trr
IRM
VFP
Parameter
Reverse recovery time
Min
Unit
ns
2.9
V
3/10
Characteristics
Figure 1.
STTH16R04C
Conduction losses versus
average current
Figure 2.
P(W)
200
13
12
δ=0.05
δ=0.1
δ=0.5
δ=0.2
δ=1
Forward voltage drop versus
forward current
IFM(A)
180
11
TJ=150°C
(Maximum values)
160
10
9
140
8
120
7
TJ=150°C
(Typical values)
100
6
80
5
4
60
T
3
TJ=25°C
(Maximum values)
40
2
1
δ=tp/T
IF(AV)(A)
20
tp
0
VFM(V)
0
0
1
Figure 3.
2
3
4
5
6
7
8
9
10
11
Relative variation of thermal
impedance junction to case
versus pulse duration
0.0
0.4
Figure 4.
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
Relative variation of thermal
impedance junction to case
versus pulse duration TO-220FPAB
Zth(j-c)/Rth(j-c)
Zth(j-c)/Rth(j-c)
1.0
1.0
Single pulse
TO-220FPAB
Single pulse
TO-220AB/D²PAK
0.1
tp(s)
tp(s)
0.1
1.E-03
Figure 5.
1.E-02
1.E-01
1.E+00
Peak reverse recovery current
versus dIF/dt (typical values)
Figure 6.
IRM(A)
12
140
IF= 8 A
VR=320 V
11
0.0
1.E-03
1.E-02
1.E-01
9
1.E+01
Reverse recovery time versus
dIF/dt (typical values)
tRR(ns)
IF= 8 A
VR=320 V
120
10
1.E+00
100
8
7
80
6
Tj=125 °C
5
4
3
60
Tj=125 °C
40
Tj=25 °C
Tj=25 °C
2
20
1
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
10
4/10
100
1000
10
100
1000
STTH16R04C
Figure 7.
200
Characteristics
Reverse recovery charges versus
dIF/dt (typical values)
Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, eCU = 35 µm)
Rth(j-a) (°C/W)
QRR(nC)
80
D²PAK
IF= 8 A
VR=320 V
180
Figure 8.
70
160
60
140
Tj=125 °C
120
50
100
40
80
30
60
20
Tj=25 °C
40
10
20
SCU(cm²)
dIF/dt(A/µs)
0
0
10
100
Figure 9.
Relative variations of dynamic
parameters versus junction
temperature
4
6
8
10
12
14
16
18
20
VFp(V)
5.0
IF= 8 A
VR=320 V
1.2
2
Figure 10. Transient peak forward voltage
versus dIF/dt (typical values)
QRR [Tj]/QRR [Tj = 125° C] and IRM [Tj]/IRM [Tj = 125° C]
1.4
0
1000
IF=8 A
Tj=125 °C
4.5
4.0
1.0
3.5
IRM
0.8
3.0
2.5
0.6
2.0
QRR
1.5
0.4
1.0
0.2
0.5
T j(°C)
0.0
dIF/dt(A/µs)
0.0
25
50
75
100
125
0
150
50
100
150
200
250
300
350
400
450
500
Figure 11. Forward recovery time versus dIF/dt Figure 12. Junction capacitance versus
(typical values)
reverse voltage applied (typical
values)
700
tFR(ns)
C(pF)
100
IF=8 A
VFR=1.1 x V F max.
Tj=125°C
600
F=1MHz
VOSC=30mVRMS
Tj=25°C
500
400
300
200
100
dIF/dt(A/µs)
VR(V)
10
0
0
100
200
300
400
500
1
10
100
1000
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Package information
2
STTH16R04C
Package information
●
Epoxy meets UL94, V0
●
Cooling method: by conduction (C)
●
Recommended torque value: 0.8 Nm (TO-220FPAB) / 0.55 Nm (TO-220AB)
●
Maximum torque value: 1.0 Nm (TO-220FPAB) / 0.70 Nm (TO-220AB)
Table 5.
D2PAK dimensions
Dimensions
Ref.
A
E
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
Millimeters
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
V2
0.40 typ.
0°
16.90
10.30
5.08
1.30
6/10
3.70
0.016 typ.
8°
Figure 13. D2PAK footprint (dimensions in mm)
8.90
Inches
0°
8°
STTH16R04C
Package information
Table 6.
TO-220AB dimensions
Dimensions
Ref.
Millimeters
Min.
A
15.20
a1
C
B
ØI
Typ.
Max.
Inches
Min.
Typ.
15.90 0.598
3.75
Max.
0.625
0.147
a2
13.00
14.00 0.511
0.551
B
10.00
10.40 0.393
0.409
b1
0.61
0.88
0.024
0.034
b2
1.23
1.32
0.048
0.051
C
4.40
4.60
0.173
0.181
c1
0.49
0.70
0.019
0.027
c2
2.40
2.72
0.094
0.107
e
2.40
2.70
0.094
0.106
F
6.20
6.60
0.244
0.259
ØI
3.75
3.85
0.147
0.151
I4
15.80 16.40 16.80 0.622 0.646 0.661
L
2.65
2.95
0.104
0.116
l2
1.14
1.70
0.044
0.066
l3
1.14
1.70
0.044
0.066
b2
L
F
A
I4
l3
c2
a1
l2
a2
M
b1
e
c1
M
2.60
0.102
7/10
Package information
Table 7.
STTH16R04C
TO-220FPAB dimensions
Dimensions
Ref.
A
B
H
Dia
L6
L2
L7
L3
L5
F1
L4
F
G
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.018
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
D
F2
G1
Millimeters
L2
E
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.205
L4
9.8
10.6
0.386
0.417
L5
2.9
3.6
0.114
0.142
L6
15.9
16.4
0.626
0.646
L7
9.00
9.30
0.354
0.366
Dia.
3.00
3.20
0.118
0.126
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
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STTH16R04C
3
4
Ordering information
Ordering information
Part Number
Marking
Package
Weight
Base qty
Delivery mode
STTH16R04CT
STTH16R04CT
TO-220AB
1.92 g
50
Tube
2
STTH16R04CG
STTH16R04CG
D PAK
1.48 g
50
Tube
STTH16R04CG-TR
STTH16R04CG
D2PAK
1.48 g
1000
Tape and reel
STTH16R04CFP
STTH16R04CFP
TO-220FPAB
1.69 g
50
Tube
Revision history
Date
Revision
31-Mar-2007
1
Description of Changes
First issue
9/10
STTH16R04C
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