STH12NA60/FI STW12NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH12NA60 STH12NA60FI STW12NA60 ■ ■ ■ ■ ■ ■ ■ V DSS R DS( on) ID 600 V 600 V 600 V < 0.6 Ω < 0.6 Ω < 0.6 Ω 12 A 7A 12 A TO-247 TYPICAL RDS(on) = 0.44 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 3 2 1 3 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. 2 2 1 TO-218 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ■ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STH/STW12NA60 VD S V DG R V GS Unit STH12NA60FI Drain-source Voltage (V GS = 0) 600 V Drain- gate Voltage (R GS = 20 kΩ) 600 V ± 30 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 12 7 A ID Drain Current (continuous) at T c = 100 oC 7.6 4.4 A Drain Current (pulsed) 48 48 A Total Dissipation at Tc = 25 C 190 80 W Derating Factor 1.52 0.64 W/o C 4000 ID M(•) P tot V ISO T stg Tj o Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature V -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area November 1996 1/11 STH12NA60/FI - STW12NA60 THERMAL DATA TO-218/TO-247 ISOWATT218 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max o C/W 30 0.1 300 o C/W C/W o C Max Value Unit 0.66 1.56 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o AVALANCHE CHARACTERISTICS Symbol Parameter IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 12 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 50 V) 700 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 28 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 7.6 A o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VG S = 0 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 600 Unit V T c = 125 oC V GS = ± 30 V 25 250 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS( on) Static Drain-source On Resistance V GS = 10V ID = 6 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max V GS = 10 V Min. Typ. Max. Unit 2.25 3 3.75 V 0.44 0.6 Ω 12 A DYNAMIC Symbol gfs (∗) C iss C oss C rss 2/11 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 6 A VG S = 0 Min. Typ. 8 12 2500 310 85 Max. Unit S 3250 410 110 pF pF pF STH12NA60/FI - STW12NA60 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Parameter Test Conditions Min. Typ. Max. Unit 35 50 ns ns Turn-on Time Rise Time V DD = 300 V I D = 6 A V GS = 10 V R G = 4.7 Ω (see test circuit, figure 3) 25 35 Turn-on Current Slope V DD = 480 V I D = 12 A VGS = 10 V R G = 47 Ω (see test circuit, figure 5) 190 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V ID = 12 A VG S = 10 V A/µs 110 15 47 150 nC nC nC Typ. Max. Unit 35 20 57 50 30 80 ns ns ns Typ. Max. Unit 12 48 A A 1.6 V SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 480 V ID = 12 A V GS = 10 V R G = 4.7 Ω (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(•) Source-drain Current Source-drain Current (pulsed) V S D (∗) Forward On Voltage I SD = 12 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 12 A di/dt = 100 A/µs V DD = 100 V T j = 150 o C (see test circuit, figure 5) t rr Q rr I RRM Min. VG S = 0 670 ns 12.7 µC 38 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218 3/11 STH12NA60/FI - STW12NA60 Thermal Impedeance For TO-218 and TO-247 Thermal Impedance For ISOWATT218 Derating Curve For TO-218 and TO-247 Derating Curve For ISOWATT218 Output Characteristics Transfer Characteristics 4/11 STH12NA60/FI - STW12NA60 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/11 STH12NA60/FI - STW12NA60 Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/11 STH12NA60/FI - STW12NA60 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 7/11 STH12NA60/FI - STW12NA60 TO-247 MECHANICAL DATA mm DIM. MIN. A TYP. 4.7 A1 inch MAX. MIN. 5.3 0.185 TYP. MAX. 0.208 2.87 0.113 A2 1.5 2.5 0.059 0.098 b 1 1.4 0.039 0.055 b1 2.25 0.088 b2 3.05 3.43 0.120 0.135 C 0.4 0.8 0.015 0.031 D 20.4 21.18 0.803 0.833 e 5.43 5.47 0.213 0.215 E 15.3 15.95 0.602 0.628 L 15.57 L1 3.7 4.3 0.145 0.169 Q 5.3 5.84 0.208 0.230 ØP 3.5 3.71 0.137 0.146 A2 A1 A C 0.613 D b L1 b1 Q L b2 E e ø 8/11 STH12NA60/FI - STW12NA60 TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 0.163 31 1.220 – 12.2 – 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F Ø R 1 2 3 P025A 9/11 STH12NA60/FI - STW12NA60 ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 5.35 TYP. 5.65 0.210 TYP. 0.222 MAX. C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.45 1 0.017 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 10/11 P025C STH12NA60/FI - STW12NA60 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 11/11