STZ6.8N Diodes Zener diode STZ6.8N !External dimensions (Units : mm) 2.9±0.2 1.9±0.2 1.1 0.95 0.95 +0.1 −0.05 2.8±0.2 +0.2 −0.1 6C 0.4 0.8±0.1 1.6 !Features 1) Small surface mounting type. (SMD3) 2) Multiple diodes with common anode configuration. 3) High reliability. 0∼0.1 0.15 +0.1 −0.06 (All leads have the same dimensions) ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Construction Silicon epitaxial planar !Circuit !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Power dissipation∗ P 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg −55∼+150 ˚C Parameter ∗ Total of 2 elements. !Electrical characteristics (Ta=25°C) Parameter Zener voltage +0.2 −0.1 Symbol Min. Typ. Max. Unit VZ 6.47 − 7.14 V IZ=5mA Conditions Reverse current IR − − 0.5 µA VR=3.5V Operating resistance Zz − − 40 Ω IZ=5mA Rising operating resistance ZZK − − 60 Ω IZ=0.5mA 0.3∼0.6 !Applications Constant voltage control Noise suppression on signal line STZ6.8N Diodes !Electrical characteristic curves (Ta=25°C ) −20°C 25°C 300 70°C POWER DISSIPATION : Pd (mW) ZENER CURRENT : Iz (A) 100m 10m 1m 100µ 10µ 1µ 200 100 100n 2 3 4 5 6 7 ZENER VOLTAGE : Vz (V) Fig.1 Zener voltage characteristics 8 0 0 25 50 100 AMBIENT TEMPERATURE : Ta (˚C) Fig.2 Derating curve 150