SUD45N05-20L N-Channel 50 V (D-S) 175 °C MOSFET rDS(on) () ID (A)a 0.018 @ VGS = 10 V 30 0.020 @ VGS = 4.5 V 30 VDS (V) 50 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45N05-20L S N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 50 Gate-Source Voltage VGS 20 TC = 25C Continuous Drain Currenta TC = 100C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH TC = 25C Maximum Power Dissipation TA = 25C Operating Junction and Storage Temperature Range ID V 30 30 IDM 100 IS 43 IAR 37 EAR 93 PD Unit 75 2.5a A mJ W TJ, Tstg –55 to 175 C Symbol Limit Unit Parameter Free Air, FR4 Board Mount Maximum Junction-to-Ambient Free Air, Vertical Mount Maximum Junction-to-Case 60 RthJA RthJC 110 2.0 Notes a. Package limited. b. Surface Mounted on FR4 Board, t 10 sec. 1/5 www.freescale.net.cn C/W SUD45N05-20L N-Channel 50 V (D-S) 175 °C MOSFET Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 50 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 50 V, VGS = 0 V 1 VDS = 50 V, VGS = 0 V, TJ = 125C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Z G V l D i Current C IDSS On-State Drain Currentb ID(on) V 2.0 VDS = 50 V, VGS = 0 V, TJ = 175C b D i S O S R i Drain-Source On-State Resistance rDS(on) VDS = 5 V, VGS = 10 V gfs A VGS = 10 V, ID = 20 A 0.018 VGS = 10 V, ID = 20 A, TJ = 125C 0.036 VGS = 10 V, ID = 43 A, TJ = 125C 0.040 VDS = 15 V, ID = 43 A mA A 150 43 VGS = 4.5 V, ID = 43 A Forward Transconductanceb nA W 0.020 20 S Dynamica Input Capacitance Ciss 1800 VGS = 0 V, VDS = 25 V, f = 1 MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 130 Total Gate Chargec Qg 43 3600 pF F 370 60 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 10 Turn-On Delay Timec td(on) 10 20 10 20 32 60 7 15 Rise Timec tr Turn-Off Delay Timec Fall Timec td(off) VDS = 25 V, V, ID = 43 A V VGS = 10 V VDD = 25 V V,, RL = 0 0.6 6W A VGEN = 10 V 5W ID ^ 43 A, V, RG = 2 2.5 tf nC C 7 ns Source-Drain Diode Ratings and Characteristic (TC = 25C) Pulsed Current ISM 43 Voltageb VSD IF = 43 A, VGS = 0 V Source-Drain Reverse Recovery Time trr IF = 43 A, di/dt = 100 A/ms Diode Forward 49 1.5 V 100 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. 2/5 A www.freescale.net.cn SUD45N05-20L N-Channel 50 V (D-S) 175 °C MOSFET Output Characteristics Transfer Characteristics 100 60 VGS = 10, 9, 8, 7, 6 V 50 5V I D – Drain Current (A) I D – Drain Current (A) 80 60 40 4V 20 40 30 20 TC = –125C 10 25C 3V –55C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 2 Transconductance 4 5 On-Resistance vs. Drain Current 0.04 r DS(on) – On-Resistance ( Ω ) TC = –55C 60 25C 125C 40 20 0 0.03 0.02 VGS = 4.5 V VGS = 10 V 0.01 0 0 10 20 30 40 50 60 0 20 ID – Drain Current (A) 40 60 ID – Drain Current (A) Capacitance Gate Charge 10 3000 V GS – Gate-to-Source Voltage (V) 2500 C – Capacitance (pF) 3 VGS – Gate-to-Source Voltage (V) 80 g fs – Transconductance (S) 1 Ciss 2000 1500 1000 Coss 500 Crss 0 VDS = 25 V ID = 43 A 8 6 4 2 0 0 10 20 30 40 VDS – Drain-to-Source Voltage (V) 3/5 50 0 10 20 30 40 Qg – Total Gate Charge (nC) www.freescale.net.cn 50 SUD45N05-20L N-Channel 50 V (D-S) 175 °C MOSFET On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.25 100 VGS = 10 V ID = 20 A 1.75 I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) 2.00 1.50 1.25 1.00 0.75 0.50 TJ = 150C TJ = 25C 10 0.25 0 –50 1 –25 0 25 50 75 100 125 150 175 0 0.3 TJ – Junction Temperature (C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Maximum Drain Current vs. CaseTemperature Safe Operating Area 200 50 100 I D – Drain Current (A) I D – Drain Current (A) 40 30 20 Limited by rDS(on) 100 ms 10 1 ms 10 ms 1 100 ms dc, 1 s TC = 25C Single Pulse 10 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) 4/5 www.freescale.net.cn 30 SUD45N05-20L N-Channel 50 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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