TC1188/TC1189 MAX8863/64 Pin Compatible, Low Dropout, 120 mA Linear Regulators Features General Description • • • • • • • • • The TC1188 and TC1189 are fixed output, low dropout linear regulators that operate from a 2.7V to 6.0V input voltage source. The output is capable of delivering up to 120 mA while consuming only 50 µA of quiescent current. The low dropout voltage, 120 mV, make the TC1188 and TC1189 good choices for battery powered applications. Integrated over-current and over-temperature protection features provide for a fault tolerant solution. Input Voltage Range: 2.7 V to 6.0 V 120 mA Output Current Low Supply Current: 50 µA, (typical) Low Dropout Voltage: 110 mV, (typical at 100 mA) Fast Turn-On from Shutdown: 140 µsec (typical) Low Output Noise Over-Current and Over-Temperature Protection Low Power Shutdown Mode Auto Discharge of Output Capacitor (TC1189) Applications • • • • • • Battery Powered Systems Portable Computers Medical Instruments Cellular, Cordless Phones PDAs Pagers The TC1189 includes an output voltage auto discharge feature. When shutdown, the TC1189 will automatically discharge the output voltage using an internal N-Channel MOSFET switch. Fixed output voltage options for the TC1188/TC1189 are: 1.80V, 2.80V, 2.84V and 3.15V. Both the TC1188 and TC1189 are available in SOT23-5 packages. Typical Application Circuit VIN Package Type 5-Pin SOT-23A GND VOUT 4 5 TC1188 TC1189 1 2 + – Battery CIN 1 µF VOUT TC1188 TC1189 SHDN GND Output Voltage COUT 1 µF GND 3 SHDN GND VIN NOTE: 5-Pin SOT-23A is equivalent to the EIAJ (SC-74A) 2002-2012 Microchip Technology Inc. DS21364C-page 1 TC1188/TC1189 1.0 *Notice: *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Input Voltage .........................................................6.5V Output Short-Circuit Duration .............................Infinite Output Voltage........................... (-0.3V) to (VIN + 0.3V) Maximum Voltage On Any Pin.... (-0.3V) to (VIN +0.3V) Continuous Power Dissipation (TA = +70°C) SOT-23-5 (derate 7.1 mW/°C above +70°C) ..................................................................571 mW Operating Temperature Range............... -40°C to 85°C Storage Temperature..........................-65°C to +160°C Lead Temperature (Soldering, 10 Sec.) ........... +300°C DC SPECIFICATIONS Electrical Characteristics: VIN = +3.6V, GND = 0V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C. (Note 1) Parameters Symbol Min Typ Max Units Conditions Input Voltage VIN VOUT+0.5V 2.7 — — 6.0 6.0 V VOUT 2.5V VOUT = 1.8V (Note 2) Output Voltage VOUT 3.05 3.15 3.25 V 0 mA IOUT50 mA T 2.75 2.84 2.93 V 0 mA IOUT50 mA S 2.70 2.80 2.88 V 0 mA IOUT50 mA R 1.745 1.80 1.85 V 0 mA IOUT50 mA Q — mA Maximum Output Current IOUT 120 — Current Limit ILIM — 280 — mA Note 3 Input Current IIN — 50 90 µA IOUT = 0 — 1.1 — mV IOUT = 1 mA — 55 120 mV IOUT = 50 mA IOUT = 100 mA (Note 4) Dropout Voltage Line Regulation Load Regulation VLNR VLDR Output Voltage Noise Wake Up Time — 110 240 mV -0.10 0.001 0.10 %/V VIN = VOUT0.5V to 6.0V — — — %/V IOUT = 1 mA — 0.01 0.040 %/mA IOUT = 0 mA to 50 mA 350 — µVRMS 220 — µVRMS 10 Hz to 1 MHz COUT = 100 ΜF tWK — 10 — µsec VIN = 3.6V CIN = 1 µF, COUT = 1 µF IL = 30 mA, (See Figure 3-1) tS — 140 — µsec VIN = 3.6V CIN = 1 µF, COUT = 1 µF IL = 30 mA, (See Figure 3-1) (from Shutdown Mode) Setting Time (from Shutdown Mode) 10 Hz to 1 MHz, COUT = 1 ΜF — — Note 1: Limits are 100% production tested at TA = +25°C. Limits over the operating temperature range are ensured through correlation using Statistical Quality Control (SQC) methods. 2: Validated by line regulation test. 3: Not tested. For design purposes, the current limit should be considered 150 mA minimum to 410 mA maximum. 4: The dropout voltage is defined as (VIN – VOUT) when VOUT is 100 mV below the value of VOUT for VIN = VOUT +2V. DS21364C-page 2 2002-2012 Microchip Technology Inc. TC1188/TC1189 DC SPECIFICATIONS (CONTINUED) Electrical Characteristics: VIN = +3.6V, GND = 0V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C. (Note 1) Parameters Symbol Min Typ Max Units Conditions VIH 2.0 — — V VIL — — 0.4 V Ishdn — 0.1 100 nA VSHDN = VIN, TA = +25°C, TA = TMAX — 50 — nA VSHDN = VIN, TA = +25°C, TA = TMAX — 0.002 1 A VOUT = 0V, TA = +25°C, TA = TMAX — 0.02 — A — 1 — msec TSHDN — 170 — °C TSHDN — 20 — °C Shutdown: SHDN Input Threshold SHDN Input Bias Current Shutdown Supply Current Iqshdn Shutdown to Output Discharge Delay (TC1189) VOUT = 0V, TA = +25°C, TA = TMAX COUT = 1 F, no load at 10% of VOUT Thermal Protection Thermal Shutdown Temperature Thermal Shutdown Hysteresis Note 1: Limits are 100% production tested at TA = +25°C. Limits over the operating temperature range are ensured through correlation using Statistical Quality Control (SQC) methods. 2: Validated by line regulation test. 3: Not tested. For design purposes, the current limit should be considered 150 mA minimum to 410 mA maximum. 4: The dropout voltage is defined as (VIN – VOUT) when VOUT is 100 mV below the value of VOUT for VIN = VOUT +2V. 2002-2012 Microchip Technology Inc. DS21364C-page 3 TC1188/TC1189 2.0 TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: 0.040 0.10 Line Reg. @ 3.50 V to 5.50V(%) 0.035 LOAD REGULATION (%) LINE REGULATION (%) 0.08 0.06 0.04 0.02 0.00 –0.02 –0.04 –0.06 0.025 0.020 0.015 0.010 Load Reg. 0 to 50mA (%) Load Reg. 0 to 100mA (%) 0.005 –0.08 –0.10 –40°C 0.030 0°C 25°C 70°C 0.000 –40°C 85°C 85°C FIGURE 2-4: Load Regulation vs. Temperature. (TC1188) 2.930 0.120 VOUT - SET/1.0mA @ 3.5V (V) 2.910 70°C TEMPERATURE (°C) FIGURE 2-1: Line Regulation vs. Temperature. (TC1188) 50mA, Dropout V (V) 0.100 2.890 2.870 0.080 2.850 (V) VOUT (V) 25°C 0°C TEMPERATURE (°C) 2.830 2.810 0.060 0.040 2.790 0.020 2.770 2.750 –40°C 0°C 25°C 70°C 0.000 –40°C 85°C 0°C 25°C FIGURE 2-2: Output Voltage vs. Temperature. (TC1188) 85°C FIGURE 2-5: Dropout Voltage vs. Temperature. (TC1188) 0.040 10.0 RLOAD = 50μΩ COUT = 1μF Load Reg. 0 to 50mA (%) 0.035 0.030 Noise (μV/√HZ) LOAD REGULATION (%) 70°C TEMPERATURE (°C) TEMPERATURE (°C) 0.025 0.020 0.015 1.0 0.1 0.010 0.005 0.000 –40°C 0°C 25°C 70°C 85°C 0.0 0.01 TEMPERATURE (°C) FIGURE 2-3: Load Regulation vs. Temperature. (TC1188) DS21364C-page 4 0.01 1 10 100 1000 FREQUENCY (kHz) FIGURE 2-6: (TC1188) Output Noise vs. Frequency. 2002-2012 Microchip Technology Inc. TC1188/TC1189 -10 CIN = COUT = 1μF, RL = 470Ω, XSHDN = 3.5V VOUT = 2.84V RLOAD = 50Ω 100mV p-p -20 -30 VIN = 4.5V VIN = 3.5V -40 -50 (dB) CH1 T CH1 GND -60 -70 VOUTAC 20μV/DIV COUT = 1μF -80 CH2 CH2 GND T -90 -100 10 10K 100K 1M 100 1K 10M 100μsec/Div FREQUENCY (kHz) T = 25° CIN = 1μF CL =1μF RL = ∞ VOUT = 0.5V/DIV SHDN SHDN = 0V CH1 GND FIGURE 2-10: OUTPUT, SHUTDOWN VOLTAGE (V) FIGURE 2-7: Power Supply Rejection Ratio vs. Frequency. (TC1188) 3V SHDN VOUT 0V FIGURE 2-11: Wake-Up Response Time. TC1189 Shutdown Transient T CIN = 1μF COUT =1μF RL = 100Ω VIN = 3.5V XSHDN = 3V Turn On Time = 150μS VOUT = 2.7V No Overshoot CH2 GND T 2.8V TIME (100μs/Div) 200μsec/Div CH1 GND 0V VIN = 3.6V ILOAD = 30mA CIN = 1μF CLOAD = 1μF CH2 GND FIGURE 2-8: Response. TC1189 Line Response. CH2 XSHDN = 0V CH1 VOUT = 0V 200μsec/Div FIGURE 2-9: Response. TC1189 Shutdown Transient 2002-2012 Microchip Technology Inc. DS21364C-page 5 TC1188/TC1189 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Symbol SHDN GND Active Low Shutdown Input. When the SHDN input is low (< 0.2V), the quiscent current for the TC1188/TC1189 is reduced to 0.1 nA. When the input voltage to the SHDN pin is high (> 2.0V) the output of the TC1188/TC1189 is enabled. For the TC1189 only, the output capacitor is discharged by an internal switch when the SHDN is low. Ground. Connect to ground. Unregulated Input Voltage. The input voltage can range from 2.7V to 6.0V. VIN 3.1 Description VOUT Regulator Output. Sources up to 120 mA. Bypass with a 1 µF, <1 typical ESR capacitor to GND. GND Connect to GND. Detailed Description The TC1188/TC1189 devices are fixed output, low dropout linear regulators. Utilizing CMOS construction, the internal quiescent current consumed by the regulator is minimized when compared to older bipolar low dropout regulators. The LDO output voltage is sensed at the non-inverting pin of the internal error amplifier. The internal voltage reference is sensed at the inverting pin of the internal error amplifier. The error amplifier adjusts the gate source voltage of the internal P-channel pass device until the divided down output voltage matches the internal reference voltage. When it does, the LDO output voltage is in regulation. The SHDN, when pulled low, is used to turn off the PChannel MOSFET and lower the internal quiescent current to less than 1 µA maximum. For normal operation, the SHDN pin is pulled to a high level. (> 2.0V). The TC1189 incorporates an internal N-Channel MOSFET, which is used to discharge the output capacitor when shutdown. The TC1188 does not have the internal N-Channel MOSFET, therefore, when the device is shutdown, the output voltage will decrease at a rate which is dependant on the load current. 3.2 released from shutdown. The settling time of the output voltage is dependent on load conditions and output capacitance on VOUT (RC response). VIH VIL SHDN tS 98% 2% VOUT tWK FIGURE 3-1: 3.3 Wake-Up Response Time. Internal P-Channel Pass Transistor The Internal P-Channel MOSFET is operated in the linear region to regulate the LDO output voltage. The RDSon of the P-Channel MOSFET is approximately 1.1 making the LDO able to regulate with little input to output voltage differential, "Low Dropout". Another benefit of using CMOS construction is that the P-Channel MOSFET is a voltage controlled device, so it doesn't consume a fraction of the bias current required of bipolar PNP LDOs. Turn-On Response The turn-on response is defined as two separate response categories: Wake-Up Time (tWK) and Settling Time (tS). The TC1188/TC1189 have fast wake-up times (10 µsec typical) when released from shutdown. See Figure 3-1 for the wake-up time, designated as tWK. The wake-up time is defined as the time it takes for the output to rise to 2% of the VOUT value after being released from shutdown. The total turn on response is defined as the Settling Time (tS) (Figure 3-1). Settling Time (inclusive with tWK) is defined as the condition when the output is within 2% of its fully enabled value (140 µsec typical) when DS21364C-page 6 2002-2012 Microchip Technology Inc. TC1188/TC1189 VIN – Shutdown Logic SHDN Thermal Sensor GND PMOS Pass Transistor MOS Driver With ILIMIT + VOUT Error Amplifier N (TC1189 Only) Bandgap Reference GND FIGURE 3-2: 3.4 Functional Block Diagram. Shutdown The SHDN input is used to turn off the LDO P-Channel pass MOSFET and internal bias. When shutdown, the typical quiescent current consumed by the LDO is 0.1 nA. A logic low (< 0.4V) at the SHDN input will cause the device to operate in the shutdown mode. A logic high (> 2.0V) at the SHDN input will cause the device to operate in the normal mode. 3.5 Current Limit The LDO output current is monitored internal to the TC1188/TC1189. The internal current sense will limit the LDO output current to a typical value of 280 mA. The current limit can range from approximately 50 mA to 410 mA from device to device. The internal current limit protects the device from a continuous output short circuit. 3.6 Thermal Overload Protection Integrated thermal protection circuitry shuts the TC1188/TC1189 off when the internal die temperature exceeds approximately 170°C. The regulator output remains off until the internal die temperature drops to approximately 150°C. 3.7 Operating Region and Power Dissipation The internal power dissipation to the LDO is primarily determined by the input voltage, output voltage and output current. The following equation is used to approximate the worst case for power dissipation: EQUATION PD = VIN(MAX) - VOUT(MIN) x ILOAD(MAX) Where: PD = Worst case internal power dissipation. VIN(MAX) = Maximum input voltage. VOUT(MIN) = Minimum output voltage. ILOAD(MAX) = Maximum output current. The maximum power dissipation is a function of the maximum ambient temperature, TA(MAX), the maximum junction temperature, TJ(MAX), and the package thermal resistance from junction to air, JA. The 5-Pin SOT23A package has a JA of approximately 220°C/Watt. EQUATION PD = (TJ(MAX) - TA(MAX))/JA Where all terms are previously defined. 2002-2012 Microchip Technology Inc. DS21364C-page 7 TC1188/TC1189 EXAMPLE 3-1: 4.0 APPLICATIONS INFORMATION The previously defined power dissipation equations can be used to ensure that the regulator thermal operation is within limits. 4.1 Input Capacitor Given: VIN(MAX) = 3.0V +10% VOUT(MAX) = 2.7V - 2.5% ILOAD(MAX) = 40 MA TJ(MAX) = 125°C TA(MAX) = 55°C A 1 µF (or larger) capacitor is recommended to bypass the LDO input and lower input impedance for circuit stability when operating from batteries or high impedance sources. The input capacitor can be ceramic, tantalum or aluminum electrolytic. For applications that require low noise and input power supply rejection, low effective series resistance (ESR) ceramic capacitors are recommended over higher ESR electrolytic capacitors. Larger value input capacitors can be used to improve circuit performance. Find: 1. 2. Actual power dissipation. Maximum allowable dissipation. Actual power dissipation: PD = VIN(MAX) - VOUT(MIN) x ILOAD(MAX) PD = ((3.0 * 1.1) - (2.7 * 0.975)) * 40 mA PD = 26.7 mWatts 4.2 Output Capacitor A 1 µF (minimum) capacitor is required from VOUT to ground to ensure circuit stability. The output capacitor should have an ESR greater than 0.1 ohms and less than 2 ohm. Tantalum or aluminum electrolytic capacitors are recommended. Since many aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalums are recommended for applications operating below 25°C. Maximum allowable power dissipation: PD = (TJ(MAX) - TA(MAX))/JA PD(MAX) = (125 - 55) / 220 PD(MAX) = 318 mWatts. In this example, the TC1188/TC1189 dissipates a maximum of 26.7 mW below the allowable limit of 318 mW. In a similar manner, the power dissipation equation, as a function of VIN, VOUT and ILOAD, along with the power dissipation equation, as a function of maximum junction temperature, maximum ambient temperature and junction to air thermal resistance, can be used to calculate maximum current and/or maximum input voltage limits. DS21364C-page 8 2002-2012 Microchip Technology Inc. TC1188/TC1189 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 5 4 1 Legend: XX...X Y YY WW NNN e3 * Note: 2 3 Part Number (V) Code TC1188-XECT 1.80 G4 TC1188-XECT 2.80 G3 TC1188-XECT 2.84 G2 TC1188-XECT 3.15 G1 TC1189-XECT 1.80 H4 TC1189-XECT 2.80 H3 TC1189-XECT 2.84 H2 TC1189-XECT 3.15 H1 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2002-2012 Microchip Technology Inc. DS21364C-page 9 TC1188/TC1189 5-Lead Plastic Small Outline Transistor (OT) (SOT23) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E E1 p B p1 n D 1 c A Units Dimension Limits n Number of Pins p Pitch p1 Outside lead pitch (basic) Overall Height Molded Package Thickness Standoff § Overall Width Molded Package Width Overall Length Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic L A A2 A1 E E1 D L c B MIN .035 .035 .000 .102 .059 .110 .014 0 .004 .014 0 0 A2 A1 INCHES* NOM 5 .038 .075 .046 .043 .003 .110 .064 .116 .018 5 .006 .017 5 5 MAX .057 .051 .006 .118 .069 .122 .022 10 .008 .020 10 10 MILLIMETERS NOM 5 0.95 1.90 0.90 1.18 0.90 1.10 0.00 0.08 2.60 2.80 1.50 1.63 2.80 2.95 0.35 0.45 0 5 0.09 0.15 0.35 0.43 0 5 0 5 MIN MAX 1.45 1.30 0.15 3.00 1.75 3.10 0.55 10 0.20 0.50 10 10 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MO-178 Drawing No. C04-091 DS21364C-page 10 2002-2012 Microchip Technology Inc. TC1188/TC1189 REVISION HISTORY Revision C (November 2012) Added a note to the package outline drawing. 2002-2012 Microchip Technology Inc. DS21364C-page 11 TC1188/TC1189 NOTES: DS21364C-page 12 2002-2012 Microchip Technology Inc. TC1188/TC1189 THE MICROCHIP WEB SITE CUSTOMER SUPPORT Microchip provides online support via our WWW site at www.microchip.com. This web site is used as a means to make files and information easily available to customers. Accessible by using your favorite Internet browser, the web site contains the following information: Users of Microchip products can receive assistance through several channels: • Product Support – Data sheets and errata, application notes and sample programs, design resources, user’s guides and hardware support documents, latest software releases and archived software • General Technical Support – Frequently Asked Questions (FAQ), technical support requests, online discussion groups, Microchip consultant program member listing • Business of Microchip – Product selector and ordering guides, latest Microchip press releases, listing of seminars and events, listings of Microchip sales offices, distributors and factory representatives • • • • Distributor or Representative Local Sales Office Field Application Engineer (FAE) Technical Support Customers should contact their distributor, representative or field application engineer (FAE) for support. Local sales offices are also available to help customers. A listing of sales offices and locations is included in the back of this document. Technical support is available through the web site at: http://microchip.com/support CUSTOMER CHANGE NOTIFICATION SERVICE Microchip’s customer notification service helps keep customers current on Microchip products. Subscribers will receive e-mail notification whenever there are changes, updates, revisions or errata related to a specified product family or development tool of interest. To register, access the Microchip web site at www.microchip.com. Under “Support”, click on “Customer Change Notification” and follow the registration instructions. 2002-2012 Microchip Technology Inc. DS21364C-page 13 TC1188/TC1189 READER RESPONSE It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150. Please list the following information, and use this outline to provide us with your comments about this document. TO: Technical Publications Manager RE: Reader Response Total Pages Sent ________ From: Name Company Address City / State / ZIP / Country Telephone: (_______) _________ - _________ FAX: (______) _________ - _________ Application (optional): Would you like a reply? Y N Device: TC1188/TC1189 Literature Number: DS21364C Questions: 1. What are the best features of this document? 2. How does this document meet your hardware and software development needs? 3. Do you find the organization of this document easy to follow? If not, why? 4. What additions to the document do you think would enhance the structure and subject? 5. What deletions from the document could be made without affecting the overall usefulness? 6. Is there any incorrect or misleading information (what and where)? 7. How would you improve this document? DS21364C-page 14 2002-2012 Microchip Technology Inc. TC1188/TC1189 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X /XX Device Voltage Output Package Examples: a) TC1188QECTTR: 1.80V, 100 mA, MAX8863/64 Pin Compatible LDO b) TC1188RECTTR: 2.80V, 100 mA, MAX8863/64 Pin Compatible LDO Device: Voltage Output Options: Package: TC1188: TC1189: Q R S T = = = = ECTTR 100 mA, MAX8863/64 Pin Compatible LDO 100 mA, MAX8863/64 Pin Compatible LDO 1.80V 2.80V 2.84V 3.15V = SOT-23A, 5-Pin (Tape and Reel) c) TC1188SECTTR: 2.84V, 100 mA, MAX8863/64 Pin Compatible LDO d) TC1188TECTTR: 3.15V, 100 mA, MAX8863/64 Pin Compatible LDO a) TC1189QECTTR: 1.80V, 100 mA, MAX8863/64 Pin Compatible LDO b) TC1189RECTTR: 2.80V, 100 mA, MAX8863/64 Pin Compatible LDO c) TC1189SECTTR: 2.84V, 100 mA, MAX8863/64 Pin Compatible LDO d) TC1189TECTTR: 3.15V, 100 mA, MAX8863/64 Pin Compatible LDO Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. Your local Microchip sales office The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2002-2012 Microchip Technology Inc. DS21364C-page15 TC1188/TC1189 NOTES: DS21364C-page 16 2002-2012 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. 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Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2002-2012, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620767450 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2002-2012 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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