TC1263 500 mA, Fixed-Output, CMOS LDO with Shutdown Features Description • • • • • • • The TC1263 is a fixed-output, high-accuracy (typically ±0.5%) CMOS low dropout regulator. Designed specifically for battery-operated systems, the TC1263’s CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply current is typically 80 µA at full load (20 to 60 times lower than in bipolar regulators). Very Low Dropout Voltage 500 mA Output Current High-Output Voltage Accuracy Standard or Custom Output Voltages Overcurrent and Overtemperature Protection SHDN Input for Active Power Management ERROR Output Can Be Used as a Low Battery Detector (SOIC only) Applications • • • • • • • TC1263 key features include ultra low noise operation, very low dropout voltage (typically 350 mV at full load) and fast response to step changes in load. The TC1263 incorporates both overtemperature and overcurrent protection. The TC1263 is stable with an output capacitor of only 1 µF and has a maximum output current of 500 mA. It is available in 8-Pin SOIC, 5-Pin TO-220 and 5-Pin DDPAK packages. Battery-Operated Systems Portable Computers Medical Instruments Instrumentation Cellular/GSM/PHS Phones Linear Post-Regulators for SMPS Pagers Package Type 5-Pin TO-220 5-Pin DDPAK Front View VOUT VIN TC1263 SHDN TC1263 C1 1 µF 1 2 3 4 5 1 2 3 4 5 SHDN BYP SHDN GND VIN VOUT GND + TC1263 VOUT BYP SHDN GND VIN VOUT VIN Tab is GND Tab is GND Typical Application 8-Pin SOIC VOUT 1 GND 2 8 VIN 7 NC TC1263 © 2005 Microchip Technology Inc. NC 3 6 SHDN BYPASS 4 5 ERROR DS21374C-page 1 TC1263 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Input Voltage .........................................................6.5V Output Voltage................ (GND – 0.3V) to (VIN + 0.3V) Power Dissipation................Internally Limited (Note 7) Voltage (max.) on Any Pin: (GND – 0.3V) to (VIN + 0.3V) Operating Temperature Range.... -40°C < TJ < +125°C Storage Temperature..........................-65°C to +150°C † Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, VIN = VR + 1.0V, (Note 1), IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Parameters Input Operating Voltage Maximum Output Current Output Voltage Sym Min Typ Max Units VIN 2.7 — 6.0 V IOUTMAX 500 — — mA Note 2 VOUT VR – 2.5% ΔVOUT/ΔT — 40 — Line Regulation ΔVOUT/ΔVIN — 0.05 0.35 % Load Regulation (Note 4) ΔVOUT/VOUT –0.01 0.002 +0.01 %/mA Dropout Voltage (Note 5) VIN-VOUT mV VOUT Temperature Coefficient Supply Current VR ± 0.5% VR + 2.5% Conditions V Note 1 ppm/°C Note 3 (VR + 1V) ≤ VIN ≤ 6V IL = 0.1 mA to IOUTMAX — 20 30 — 60 130 IL = 100 µA IL = 100 mA — 200 390 IL = 300 mA — 350 650 IL = 500 mA IDD — 80 130 µA SHDN = VIH, IL = 0 Shutdown Supply Current ISHDN — 0.05 1 µA SHDN = 0V Power Supply Rejection Ratio PSRR — 64 — db F ≤ 1 kHz Output Short Circuit Current IOUTSC — 1200 1400 mA VOUT = 0V ΔVOUT/ΔPD — 0.04 — V/W Note 6 eN — 260 — Thermal Regulation Output Noise Note 1: 2: 3: 4: 5: 6: 7: nV/√Hz IL = IOUTMAX, F = 10 kHZ VR is the regulator output voltage setting. The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX. 6 ( V OUTMAX – V OUTMIN ) – 10 TCV OUT = ------------------------------------------------------------------------V OUT × ΔT Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value measured at a 1.0V differential. Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details. DS21374C-page 2 © 2005 Microchip Technology Inc. TC1263 DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise indicated, VIN = VR + 1.0V, (Note 1), IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Parameters Sym Min Typ Max Units SHDN Input High Threshold VIH 45 — — %VIN SHDN Input Low Threshold VIL — — 15 %VIN Conditions SHDN Input ERROR Output (SOIC Only) Minimum Operating Voltage VMIN 1.0 — — V Output Logic Low Voltage VOL — — 400 mV ERROR Threshold Voltage VTH — 0.95 x VR — V ERROR Positive Hysteresis VHYS — 50 — mV Note 1: 2: 3: 4: 5: 6: 7: 1 mA Flows to ERROR VR is the regulator output voltage setting. The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX. 6 ( V OUTMAX – V OUTMIN ) – 10 TCV OUT = ------------------------------------------------------------------------V OUT × ΔT Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value measured at a 1.0V differential. Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, VIN = VR + 1.0V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. Parameters Sym Min Typ Max Units Specified Temperature Range TA -40 — +125 °C Operating Temperature Range TJ -40 — +125 °C Storage Temperature Range TA -65 — +150 °C Thermal Resistance, 5L-DDPAK θJA — 57 — °C/W Thermal Resistance, 5L-TO-220 θJA — 71 — °C/W Thermal Resistance, 8L-SOIC θJA — 163 — °C/W Conditions Temperature Ranges Note 1 Thermal Package Resistances Note 1: Operation in this range must not cause TJ to exceed Maximum Junction Temperature (+125°C). © 2005 Microchip Technology Inc. DS21374C-page 3 TC1263 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0.020 150 0.018 135 0.016 120 0.014 105 0.012 90 IDD (μA) LINE REGULATION (%) Note: Unless otherwise indicated, VIN = VR + 1.0V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. 0.010 0.008 45 0.004 30 0.002 15 0°C 25°C 70°C 85°C 5V 60 0.006 0.000 -40°C 2.5V 75 0 -40°C 125°C Line Regulation vs. NOISE (μV/√Hz) 10.0 RLOAD = 50Ω COUT = 1μF 1.0 0.1 0.0 0.01 0.01 1 10 FIGURE 2-4: 85°C 70°C 25°C 0.30 0°C 0.20 -40°C 0.10 1000 Output Noise vs. Frequency. 0 FIGURE 2-5: ILOAD. 0.0100 100 200 300 ILOAD (mA) 0.50 DROPOUT VOLT AGE (V) LOAD REGULATION (%/mA) 0.0080 0.0070 0.0060 0.0040 1mA to 500mA 2.5V 0.0030 0.0020 1mA to 500mA 5V 0.40 85°C 0.30 70°C 25°C 0.20 0°C 0.10 -40°C 0.00 0°C 25°C 70°C 85°C 125°C DS21374C-page 4 Load Regulation vs. 0 100 200 300 400 500 ILOAD (mA) TEMPERATURE (°C) FIGURE 2-3: Temperature. 500 125°C 0.0010 0.0100 -40°C 400 2.5V Dropout Voltage vs. 0.0090 0.0050 85°C 125°C 125°C FREQUENCY (kHz) FIGURE 2-2: 70°C IDD vs. Temperature. 0.40 0.00 100 25°C 0.50 DROPOUT VOLT AGE (V) FIGURE 2-1: Temperature. 0°C TEMPERATURE (°C) TEMPERATURE (°C) FIGURE 2-6: ILOAD. 5.0V Dropout Voltage vs. © 2005 Microchip Technology Inc. TC1263 Note: Unless otherwise indicated, VIN = VR + 1.0V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. 2.70 IL = 0.1mA 2.50 2.10 VOUT (V) VOUT (V) 2.30 IL = 300mA IL = 500mA 5.20 5.10 5.00 4.90 4.80 4.70 4.60 4.50 1.90 4.40 4.30 1.70 4.20 4.10 4.00 -40°C 1.50 -40°C 0°C 25°C 70°C 85°C 125°C TEMPERATURE (°C) FIGURE 2-7: 2.5V VOUT vs. Temperature. © 2005 Microchip Technology Inc. IL = 0.1mA IL = 300mA IL = 500mA 0 °C 25°C 70°C 85°C 125°C TEMPERATURE (°C) FIGURE 2-8: 5.0V VOUT vs. Temperature. DS21374C-page 5 TC1263 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin No. (8-Pin SOIC) Pin No. (5-Pin DDPAK) (5-Pin TO-220) Symbol 1 5 VOUT Regulated voltage output 2 3 GND Ground terminal 3 — NC 4 1 BYPASS Reference bypass input 5 — ERROR Out-of-Regulation Flag (open-drain output). 6 2 SHDN 7 — NC No connect 8 4 VIN Unregulated supply input 3.1 Description No connect Shutdown control input Regulated Output Voltage (VOUT) VOUT is a regulated voltage output. 3.2 Ground (GND) 3.4 Out-of-Regulation Flag (ERROR) Out-of-Regulation Flag (open-drain output). ERROR goes low when VOUT is out-of-tolerance by approximately – 5%. Ground terminal. 3.5 3.3 Shutdown control input. The regulator is fully enabled when a logic-high is applied to SHDN. The regulator enters shutdown when a logic-low is applied to this input. During shutdown, output voltage falls to zero and supply current is reduced to 0.05 µA (typical). Reference Bypass (BYPASS) Reference bypass input. Connect a 470 pF to the BYPASS input to further reduce output noise. 3.6 Shutdown Control (SHDN) Unregulated Supply (VIN) VIN is an unregulated supply input. DS21374C-page 6 © 2005 Microchip Technology Inc. TC1263 4.0 DETAILED DESCRIPTION 4.2 The TC1263 is a precision, fixed-output LDO. Unlike bipolar regulators, the TC1263’s supply current does not increase with load current. In addition, VOUT remains stable and within regulation over the entire 0 mA to ILOADMAX load current range (an important consideration in RTC and CMOS RAM battery back-up applications). Figure 4-1 shows a typical application circuit. ERROR Output ERROR is driven low whenever VOUT falls out of regulation by more than – 5% (typ.). This condition may be caused by low input voltage, output current limiting or thermal limiting. The ERROR threshold is 5% below rated VOUT, regardless of the programmed output voltage value (e.g., ERROR = VOL at 4.75V (typ.) for a 5.0V regulator and 2.85V (typ.) for a 3.0V regulator). ERROR output operation is shown in Figure 4-2. Note that ERROR is active when VOUT is at or below VTH, and inactive when VOUT is above VTH + VHYS. + + 1 µF C1 Battery VOUT VIN TC1263 + 1 µF C2 VOUT GND V+ SHDN ERROR Shutdown Control (to CMOS Logic or Tie to VIN, if unused) C3 Required Only if ERROR is used as a Processor RESET Signal (See Text) R1 1M + 0.2 µF C3 BATTLOW or RESET As shown in Figure 4-1, ERROR can be used as a battery-low flag or as a processor RESET signal (with the addition of timing capacitor C3). R1 x C3 should be chosen to maintain ERROR below VIH of the processor RESET input for at least 200 ms to allow time for the system to stabilize. Pull-up resistor R1 can be tied to VOUT, VIN or any other voltage less than (VIN + 0.3V). VOUT VTH FIGURE 4-1: 4.1 Typical Application Circuit. Output Capacitor A 1 µF (min.) capacitor from VOUT to ground is required. The output capacitor should have an Effective Series Eesistance (ESR) greater than 0.1Ω and less than 5Ω. A 1 µF capacitor should be connected from VIN to GND if there is either more than 10 inches of wire between the regulator and the AC filter capacitor or a battery is used as the power source. Aluminum electrolytic or tantalum capacitor types can be used. Since many aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalums are recommended for applications operating below -25°C. When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors, and by employing passive filtering techniques. © 2005 Microchip Technology Inc. Hysteresis (VHYS) ERROR VOH VOL FIGURE 4-2: ERROR Output Operation. DS21374C-page 7 TC1263 5.0 THERMAL CONSIDERATIONS 5.1 Thermal Shutdown Integrated thermal protection circuitry shuts the regulator off when the die temperature exceeds 160°C. The regulator remains off until the die temperature drops to approximately 150°C. 5.2 Power Dissipation The amount of power the regulator dissipates is primarily a function of input and output voltage and output current. The following equation is used to calculate worst-case actual power dissipation: EQUATION 5-1: P D = ( V INMAX – VOUTMIN )I LOADMAX Where: PD = Worst-case actual power dissipation VINMAX = Maximum voltage on VIN VOUTMIN = Minimum regulator output voltage ILOADMAX = Maximum output (load) current The maximum allowable power dissipation (Equation 5-2) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) and the thermal resistance from junction-to-air (θJA). PDMAX Copper Area (Backside) Board Area Thermal Resistance (θJA) 2500 sq mm 2500 sq mm 2500 sq mm 25°C/W 1000 sq mm 2500 sq mm 2500 sq mm 27°C/W 125 sq mm 35°C/W 2500 sq mm 2500 sq mm * Tab of device attached to top-side copper Equation 5-1 can be used in conjunction with Equation 5-2 to ensure regulator thermal operation is within limits. For example: Given: VINMAX = 3.3V ± 10% VOUTMIN = 2.7V ± 0.5% ILOADMAX = 275 mA TJMAX = 125°C TAMAX = 95°C θJA = 60° C/W (SOIC) Find: 1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: THERMAL RESISTANCE GUIDELINES FOR TC1263 IN 8-PIN SOIC PACKAGE Copper Area (Backside) Board Area –3 P D = 260 mW Table 5-1 and Table 5-2 show various values of θJA for the TC1263 package types. Copper Area (Topside)* Copper Area (Topside)* P D = ( 3.3 × 1.1 ) – ( 2.7 × .995 ) 275 × 10 T JMAX – T AMAX = --------------------------------------θ JA PD = Worst-case actual power dissipation VINMAX = Maximum voltage on VIN VOUTMIN = Minimum regulator output voltage ILOADMAX = Maximum output (load) current TABLE 5-1: THERMAL RESISTANCE GUIDELINES FOR TC1263 IN 5-PIN DDPAK/TO-220 PACKAGE P D ≈ ( VINMAX – V OUTMIN )I LOADMAX EQUATION 5-2: Where: TABLE 5-2: Thermal Resistance (θJA) 2500 sq mm 2500 sq mm 2500 sq mm 60°C/W 1000 sq mm 2500 sq mm 2500 sq mm 60°C/W 225 sq mm 2500 sq mm 2500 sq mm 68°C/W 100 sq mm 2500 sq mm 2500 sq mm 74°C/W Maximum allowable power dissipation: T JMAX – T AMAX P DMAX = --------------------------------------θ JA ( 125 – 95 ) P DMAX = ------------------------60 P DMAX = 500 mW In this example, the TC1263 dissipates a maximum of 260 mW below the allowable limit of 500 mW. In a similar manner, Equation 5-1 and Equation 5-2 can be used to calculate maximum current and/or input voltage limits. For example, the maximum allowable VIN is found by substituting the maximum allowable power dissipation of 500 mW into Equation 5-1, from which VINMAX = 4.6V. * Pin 2 is ground. Device is mounted on top-side. DS21374C-page 8 © 2005 Microchip Technology Inc. TC1263 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 5-Lead DDPAK XXXXXXXXX XXXXXXXXX YYWWNNN TC1263 3.3VET 0430256 5-Lead TO-220 XXXXXXXXX XXXXXXXXX YYWWNNN Legend: XX...X Y YY WW NNN e3 * Note: Example: TC12633.3VATX 0430256 8-Lead SOIC (150 mil) XXXXXXXX XXXXYYWW NNN Example: Example: 1263-3.3 VOA0430 256 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. © 2005 Microchip Technology Inc. DS21374C-page 9 TC1263 5-Lead Plastic (ET) (DDPAK) E E1 L3 D2 D D1 1 BOTTOM VIEW e b TOP VIEW θ1 (5X) c2 A θ A1 c L Units Dimension Limits Number of Pins Pitch Overall Height Standoff § Overall Width Exposed Pad Width Molded Package Length Overall Length Exposed Pad Length Lead Thickness Pad Thickness Lead Width Foot Length Pad Length Foot Angle Mold Draft Angle MIN e A A1 E E1 D D1 D2 c c2 b L L3 θ θ1 .170 .000 .385 .330 .549 .014 .045 .026 .068 .045 -3° INCHES* NOM 5 .067 BSC .177 .005 .398 .256 REF .350 .577 .303 REF .020 -.032 .089 ---- MAX .183 .010 .410 .370 .605 .026 .055 .037 .110 .067 8° 7° MILLIMETERS NOM 5 1.70 BSC 4.50 4.32 0.13 0.00 10.11 9.78 6.50 REF 8.38 8.89 13.94 14.66 7.75 REF 0.36 0.51 1.14 -0.66 0.81 1.73 2.26 1.14 ---3° -- MIN MAX 4.65 0.25 10.41 9.40 15.37 0.66 1.40 0.94 2.79 1.70 8° 7° *Controlling Parameter § Significant Characteristic Notes: Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC equivalent: TO-252 Drawing No. C04-012 DS21374C-page 10 © 2005 Microchip Technology Inc. TC1263 5-Lead Plastic Transistor Outline (AT) (TO-220) L H1 Q b e3 e1 E e ØP EJECTOR PIN a (5X) C1 A J1 F D Units Dimension Limits e Lead Pitch Overall Lead Centers Space Between Leads Overall Height Overall Width Overall Length Flag Length Flag Thickness Through Hole Center Through Hole Diameter Lead Length Base to Bottom of Lead Lead Thickness Lead Width Mold Draft Angle e1 e3 A E D H1 F Q P L J1 C1 b a INCHES* MAX MIN .060 .072 .263 .273 .030 .040 .190 .160 .385 .415 .560 .590 .234 .258 .045 .055 .103 .113 .146 .156 .560 .540 .090 .115 .022 .014 .025 .040 3° 7° MILLIMETERS MIN MAX 1.52 1.83 6.68 6.93 0.76 1.02 4.06 4.83 9.78 10.54 14.22 14.99 5.94 6.55 1.14 1.40 2.62 2.87 3.71 3.96 13.72 14.22 2.29 2.92 0.36 0.56 0.64 1.02 3° 7° *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC equivalent: TO-220 Drawing No. C04-036 © 2005 Microchip Technology Inc. DS21374C-page 11 TC1263 8-Lead Plastic Small Outline (SN) – Narrow, 150 mil Body (SOIC) E E1 p D 2 B n 1 h α 45° c A2 A φ β L Units Dimension Limits n p Number of Pins Pitch Overall Height Molded Package Thickness Standoff § Overall Width Molded Package Width Overall Length Chamfer Distance Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic A A2 A1 E E1 D h L φ c B α β MIN .053 .052 .004 .228 .146 .189 .010 .019 0 .008 .013 0 0 A1 INCHES* NOM 8 .050 .061 .056 .007 .237 .154 .193 .015 .025 4 .009 .017 12 12 MAX .069 .061 .010 .244 .157 .197 .020 .030 8 .010 .020 15 15 MILLIMETERS NOM 8 1.27 1.35 1.55 1.32 1.42 0.10 0.18 5.79 6.02 3.71 3.91 4.80 4.90 0.25 0.38 0.48 0.62 0 4 0.20 0.23 0.33 0.42 0 12 0 12 MIN MAX 1.75 1.55 0.25 6.20 3.99 5.00 0.51 0.76 8 0.25 0.51 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057 DS21374C-page 12 © 2005 Microchip Technology Inc. TC1263 APPENDIX A: REVISION HISTORY Revision C (January 2005) The following is the list of modifications: 1. 2. Changes to DC Characteristics table Added Appendix A: Revision History. Revision B (May 2002) No information for this revision. Revision A (March 2002) Original data sheet release. © 2005 Microchip Technology Inc. DS21374C-page 13 TC1263 NOTES: DS21374C-page 14 © 2005 Microchip Technology Inc. TC1263 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X.X X XX XX Device Voltage Option Temperature Range Package Tape and Reel Device Voltage Option:* a) b) c) d) e) TC1263-2.5VAT TC1263-2.8VAT TC1263-3.0VAT TC1263-3.3VAT TC1263-5.0VAT 2.5V LDO, TO-220-5 pkg. 2.8V LDO, TO-220-5 pkg. 3.0V LDO, TO-220-5 pkg. 3.3V LDO, TO-220-5 pkg. 5.0V LDO, TO-220-5 pkg. a) TC1263-2.5VETTR 1.8V LDO, DDPAK-5 pkg., Tape and Reel TC1263-2.8VETTR 2.5V LDO, DDPAK-5 pkg., Tape and Reel TC1263-3.0VETTR 3.0V LDO, DDPAK-5 pkg., Tape and Reel TC1263-3.3VETTR 3.3V LDO, DDPAK-5 pkg., Tape and Reel TC1263 Fixed Output CMOS LDO with Shutdown 2.5 2.8 3.0 3.3 5.0 = = = = = 2.5V 2.8V 3.0V 3.3V 5.0V * Other output voltages are available. Please contact your local Microchip sales office for details. Temperature Range: V Package Examples: = -40°C to +125°C AT ET ETTR = = = OA = OATR = Plastic (TO-220), 5-Lead Plastic Transistor Outline (DDPAK), 5-Lead Plastic Transistor Outline (DDPAK), 5-Lead, Tape and Reel Plastic SOIC, (150 mil Body), 8-lead Plastic SOIC, (150 mil Body), 8-lead, Tape and Reel b) c) d) a) b) c) d) e) f) g) h) i) © 2005 Microchip Technology Inc. TC1263-2.5VOA 1.8V LDO, SOIC-8 pkg. TC1263-2.5VOATR 1.8V LDO, SOIC-8 pkg., Tape and Reel TC1263-2.8VOA 2.5V LDO, SOIC-8 pkg. TC1263-2.8VOATR 2.5V LDO, SOIC-8 pkg., Tape and Reel TC1263-3.0VOA 3.0V LDO, SOIC-8 pkg. TC1263-3.0VOATR 3.0V LDO, SOIC-8 pkg., Tape and Reel TC1263-3.3VOA 3.3V LDO, SOIC-8 pkg. TC1263-3.3VOATR 3.3V LDO, SOIC-8 pkg., Tape and Reel TC1263-5.0VOA 5.0V LDO, SOIC-8 pkg. DS21374C-page 15 TC1263 NOTES: DS21374C-page 16 © 2005 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. 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Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2005, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2005 Microchip Technology Inc. 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