MICROCHIP TC2014

TC2014/2015/2185
50 mA, 100 mA, 150 mA CMOS LDOs with
Shutdown and Reference Bypass
Features
General Description
•
•
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The TC2014, TC2015 and TC2185 are high-accuracy
(typically ±0.4%) CMOS upgrades for bipolar Low
Drop-out Regulators (LDOs), such as the LP2980.
Total supply current is typically 55 µA; 20 to 60 times
lower than in bipolar regulators.
•
•
•
•
•
•
Low Supply Current: 80 µA (Max)
Low Dropout Voltage: 140 mV (Typ.) @ 150 mA
High-Output Voltage Accuracy: ±0.4% (Typ.)
Standard or Custom Output Voltages
Power-Saving Shutdown Mode
Reference Bypass Input for Ultra Low-Noise
Operation
Fast Shutdown Response Time: 60 µsec (Typ.)
Overcurrent and Overtemperature Protection
Space-Saving 5-Pin SOT-23A Package
Pin-Compatible Upgrades for Bipolar Regulators
Wide Operating Temperature Range:
-40°C to +125°C
Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 5.0V
Applications
•
•
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•
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Battery-Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulator for SMPS
Pagers
The key features of the device include low noise operation (plus bypass reference), low dropout voltage
– typically 45 mV for the TC2014, 90 mV for the
TC2015, and 140 mV for the TC2185, at full load – and
fast response to step changes in load. Supply current
is reduced to 0.5 µA (max) and VOUT falls to zero when
the shutdown input is low. These devices also
and
overtemperature
incorporate
overcurrent
protection.
The TC2014, TC2015 and TC2185 are stable with an
output capacitor of 1 µF and have maximum output
currents of 50 mA, 100 mA and 150 mA, respectively.
For higher-output current versions, see the TC1107
(DS21356), TC1108 (DS21357) and TC1173
(DS21362) (IOUT = 300 mA) data sheets.
Typical Application
1
VIN
+
VOUT
VIN
5
VOUT
+
1 µF
1 µF
Related Literature
2
• Application Notes: AN765, AN766, AN776 and
AN792
GND
TC2014
TC2015
TC2185
Package Type
5-Pin SOT-23A
VOUT
Bypass
5
4
TC2014
TC2015
TC2185
1
VIN
2
3
SHDN
Bypass
4
0.01 µF
Reference
Bypass Cap
(Optional)
Shutdown Control
(from Power Control Logic)
3
GND SHDN
 2001-2012 Microchip Technology Inc.
DS21662F-page 1
TC2014/2015/2185
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage ................................................................... 7.0V
Output Voltage ....................................... (– 0.3) to (VIN + 0.3)
Operating Temperature ......................... – 40°C < TJ < 125°C
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
Storage Temperature.................................. – 65°C to +150°C
Maximum Voltage on Any Pin ................ VIN +0.3V to – 0.3V
Maximum Junction Temperature ...................... ............ 150°C
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Input Operating Voltage
VIN
2.7
—
6.0
V
mA
Maximum Output
Current
Output Voltage
VOUT Temperature
Coefficient
IOUTMAX
50
—
—
100
—
—
150
—
—
VOUT
VR – 2.0%
VR ± 0.4%
VR + 2.0%
TCVOUT
—
20
—
—
40
—
Conditions
Note 1
TC2014
TC2015
TC2185
V
Note 2
ppm/°C Note 3
Line Regulation
VOUT/VIN
—
0.05
0.5
%
(VR + 1V) < VIN < 6V
Load Regulation
(Note 4)
VOUT/VOUT
-1.0
0.33
+1.0
%
TC2014;TC2015: IL = 0.1 mA to IOUTMAX
-2.0
0.43
+2.0
Dropout Voltage
VIN – VOUT
—
2
—
—
45
70
—
90
140
TC2185: IL = 0.1 mA to IOUTMAX (Note 4)
mV
Note 5
IL = 100 µA
IL = 50 mA
TC2015; TC2185 IL = 100 mA
—
140
210
IIN
—
55
80
µA
SHDN = VIH, IL = 0
IINSD
—
0.05
0.5
µA
SHDN = 0V
Power Supply
Rejection Ratio
PSRR
—
55
—
dB
F  1 kHz, Cbypass = 0.01 µF
Output Short Circuit
Current
IOUTSC
—
160
300
mA
VOUT = 0V
Supply Current
Shutdown Supply
Current
TC2185
IL = 150 mA
Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT.
2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3:
–6
 V OUTMAX – V OUTMIN   10
TCV OUT = --------------------------------------------------------------------------V OUT  T
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the Thermal Regulation specification.
5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, JA).
8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN.
DS21662F-page 2
 2001-2012 Microchip Technology Inc.
TC2014/2015/2185
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
VOUT/PD
—
0.04
—
V/W
Thermal Shutdown Die
Temperature
TSD
—
160
—
°C
Output Noise
eN
—
200
—
Response Time
(from Shutdown Mode)
(Note 8)
TR
—
60
—
µs
SHDN Input High
Threshold
VIH
60
—
—
%VIN
VIN = 2.5V to 6.0V
SHDN Input Low
Threshold
VIL
—
—
15
%VIN
VIN = 2.5V to 6.0V
Thermal Regulation
Conditions
Note 6, Note 7
nV/Hz IL = IOUTMAX, F = 10 kHz
470 pF from Bypass to GND
VIN = 4V, IL = 30 mA,
CIN = 1 µF, COUT = 10 µF
SHDN Input
Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT.
2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3:
–6
 V OUTMAX – V OUTMIN   10
TCV OUT = --------------------------------------------------------------------------V OUT  T
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the Thermal Regulation specification.
5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, JA).
8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VDD = +2.7V to +6.0V and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Extended Temperature Range
TA
-40
—
+125
°C
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
JA
—
255
—
°C/W
Conditions
Temperature Ranges:
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23
 2001-2012 Microchip Technology Inc.
DS21662F-page 3
TC2014/2015/2185
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
63.0
1.820
VIN = 6.0V
57.0
VIN = 2.8V
54.0
51.0
48.0
VIN = 2.8V
1.815
VIN = 6.0V
1.810
1.805
1.800
1.795
VR = 1.8V
COUT = 3.3 µF
IL = 150 mA
1.790
45.0
Junction Temperature (°C)
FIGURE 2-1:
Temperature.
Supply Current vs. Junction
FIGURE 2-4:
Temperature.
125
110
95
80
65
50
35
Output Voltage vs. Junction
1.82
TA = -45°C
0.6
TA = +25°C
1.815
Output Voltage (V)
TA = +25°C
0.4
0.2
0
TA = +125°C
-0.2
VR = 1.8V
COUT = 3.3 µF
IL = 150 mA
-0.4
-0.6
TA = -45°C
1.81
1.805
TA = +125°C
1.8
1.795
VR = 1.8V
COUT = 3.3 µF
IL = 150 mA
1.79
-0.8
1.785
5.2
5.6
6
2.8
3.2
3.6
Supply Voltage (V)
125
110
95
80
65
50
35
20
5
-10
-25
1.790
-40
5.2
5.6
6
Junction Temperature (°C)
Output Voltage vs. Junction
IL = 150 mA
IL = 100 mA
IL = 50 mA
IL = 20 mA
Note: Dropout Voltage is not
a tested parameter for 1.8V.
VIN(min) ! 2.7V
125
1.795
DS21662F-page 4
4.8
VR = 1.8V
COUT = 3.3 μF
5
VIN = 6.0V
1.800
FIGURE 2-3:
Temperature.
4.4
Output Voltage vs. Supply
-10
VIN = 2.8V
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-25
1.805
VR = 1.8V
COUT = 3.3 µF
IL = 0.1 mA
FIGURE 2-5:
Voltage.
-40
1.810
Load Regulation vs. Supply
Dropout Voltage (V)
FIGURE 2-2:
Voltage.
4
Supply Voltage (V)
110
4.8
95
4.4
80
4
65
3.6
50
3.2
35
2.8
20
Load Regulation (%)
5
Junction Temperature (°C)
0.8
Output Voltage (V)
20
-10
-40
125
110
95
80
65
50
35
20
5
-10
-25
-40
1.785
-25
IDD (µA)
Output Voltage (V)
VR = 1.8V
COUT = 3.3 µF
60.0
Junction Temperature (°C)
FIGURE 2-6:
Dropout Voltage vs.
Junction Temperature.
 2001-2012 Microchip Technology Inc.
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
2.705
2.680
Temperature (°C)
FIGURE 2-7:
Temperature.
Supply Current vs. Junction
FIGURE 2-10:
Temperature.
125
Output Voltage vs. Junction
2.705
0.3
TA = +25°C
0.1
-0.1
TA = +125°C
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
-0.3
TA = +25°C
2.7
TA = -45°C
Output Voltage (V)
2.695
2.69
2.68
2.675
2.67
-0.5
TA = -45°C
2.685
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
TA = +125°C
2.665
3.7
4
4.3
4.6
4.9
5.2
5.5
3.7
5.8
4
4.3
FIGURE 2-8:
Voltage.
Load Regulation vs. Supply
FIGURE 2-11:
Voltage.
0.160
Dropout Voltage (V)
VIN = 6.0V
VIN = 3.7V
VR = 2.7V
COUT = 3.3 µF
IL = 0.1 mA
4.9
5.2
5.5
5.8
Output Voltage vs. Supply
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
0.120
IL = 100 mA
0.080
IL = 50 mA
0.040
IL = 20 mA
Junction Temperature (°C)
FIGURE 2-9:
Temperature.
Output Voltage vs. Junction
 2001-2012 Microchip Technology Inc.
125
110
95
80
65
50
35
5
-10
-25
-40
125
95
110
80
65
50
35
20
5
-10
-25
0.000
-40
2.690
2.688
2.686
2.684
2.682
2.680
2.678
2.676
2.674
2.672
2.670
4.6
Supply Voltage (V)
Supply Voltage (V)
20
Load Regulation (%)
95
Junction Temperature (°C)
0.5
Output Voltage (V)
110
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
-40
125
95
110
80
65
50
35
20
-10
5
2.665
-25
44.0
-40
2.670
80
2.675
46.0
65
48.0
2.685
35
50.0
VIN = 6.0V
2.690
20
VIN = 2.8V
52.0
2.695
5
54.0
-10
Output Voltage (V)
56.0
IDD(µA)
VIN = 3.7V
2.700
VIN = 6.0V
50
VR = 2.7V
COUT = 3.3 µF
58.0
-25
60.0
Junction Temperature (°C)
FIGURE 2-12:
Dropout Voltage vs.
Junction Temperature.
DS21662F-page 5
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
0.12
60
54
51
48
VR = 5.0V
COUT = 3.3 µF
VR = 5.0V
COUT = 3.3 µF
IL = 150 mA
0.08
IL = 100 mA
0.06
0.04
IL = 50 mA
0.02
Junction Temperature (°C)
FIGURE 2-13:
Temperature.
Supply Current vs. Junction
Output Voltage (V)
125
110
95
VIN = 3.8V
VOUT = 2.8V
CIN = 1 µF Ceramic
COUT = 1 µF Ceramic
Frequency = 1 kHz
4.99
4.98
100mV/DIV
IL = 100 mA
80
FIGURE 2-16:
Dropout Voltage vs.
Junction Temperature.
IL = 150 mA
4.97
65
Junction Temperature (°C)
5.01
5.00
50
35
20
5
-10
-25
125
110
95
80
65
50
35
5
20
-10
-25
0.00
-40
45
0.10
-40
IDD (µA)
Dropout Voltage (V)
VIN = 6.0V
57
VOUT
IL = 0.1 mA
4.96
4.95
4.94
VR = 5.0V
COUT = 3.3 µF
VIN = 6.0V
Load Current
150mA
Load
100mA
125
110
95
80
65
50
35
20
5
-10
-25
-40
4.93
Junction Temperature (°C)
FIGURE 2-14:
Temperature.
Output Voltage vs. Junction
Load Regulation (%)
Load Transient Response.
VIN = 3.0V
VOUT = 2.8V
CIN = 1 μF Ceramic
COUT = 10 μF Ceramic
Frequency = 10 kHz
0.40
IL = 150 mA
0.30
FIGURE 2-17:
(COUT = 1 µF).
0.20
0.10
100mV / DIV
-0.10
-0.20
-0.30
VOUT
IL = 100 mA
0.00
IL = 50 mA
VR = 5.0V
COUT = 3.3 µF
VIN = 6.0 V
Load Current
150mA
Load
100mA
125
110
95
80
65
50
35
20
5
-10
-25
-40
-0.40
Junction Temperature (°C)
FIGURE 2-15:
Load Regulation vs.
Junction Temperature.
DS21662F-page 6
FIGURE 2-18:
(COUT = 10 µF).
Load Transient Response.
 2001-2012 Microchip Technology Inc.
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
Line Transient Response.
VOUT
100mV/DIV
150mA
100mA
VIN = 3.105V
VOUT = 3.006V
CIN = 1 μF Ceramic
COUT = 10 μF Ceramic
RLOAD = 20 Ω
FIGURE 2-22:
Power Supply Ripple Rejection
(dB)
FIGURE 2-19:
(COUT = 1 µF).
0
-10
VIN = 4.0V
VINAC = 100 mV
VOUTDC = 3.0V
-30
IOUT = 150 mA
-40
IOUT = 100 mA
-50
-60
IOUT = 50 mA
-70
Power Supply Ripple Rejection
(dB)
Shutdown Delay Time.
 2001-2012 Microchip Technology Inc.
100
1k
1000
10k
100k 100000
1M
10000
100000
0
Frequency (Hz)
FIGURE 2-23:
PSRR vs. Frequency
(COUT = 1 µF Ceramic).
0
-10
VIN = 4.0V
VINAC = 100 mV
VOUTDC = 3.0V
COUT = 10 µF Ceramic
CBYPASS = 0.01 µF Ceramic
-20
-30
IOUT = 150 mA
-40
IOUT = 100 mA
-50
-60
-70
10
10
FIGURE 2-21:
COUT = 1µF Ceramic
CBYPASS = 0.01 µF Ceramic
-20
10
FIGURE 2-20:
Load Transient Response in
Dropout. (COUT = 10 µF).
Wake-Up Response.
100
1k
1000
10k
100k 100000
1M
10000
100000
0
Frequency (Hz)
FIGURE 2-24:
PSRR vs. Frequency
(COUT = 10 µF Ceramic).
DS21662F-page 7
TC2014/2015/2185
0
-10
-20
-30
VIN = 4.0V
VINAC = 100 mV
VOUTDC = 3.0V
CBYPASS = 0 µF
-40
-50
CBYPASS = 0.01 µF
-60
10
10.000
COUT = 10 µF Tantalum
IOUT = 150 mA
Noise (µV/—Hz)
Power Supply Ripple Rejection
(dB)
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
VIN = 4.0V
VOUTDC = 3.0V
IOUT = 100 µA
CBYPASS = 470 pF
1
1.000
0.1
0.100
COUT = 1 µF
COUT = 10 µF
0.10
0.010
-70
10
10
100
100
1k
1000
10k
100k 100000
1M
10000
100000
0
0.001
10
Frequency (Hz)
FIGURE 2-25:
PSRR vs. Frequency
(COUT = 10 µF Tantalum).
DS21662F-page 8
FIGURE 2-26:
100
100
1k
1000
10k 100000
100k 100000
1M
10000
0
Frequency (Hz)
Output Noise vs. Frequency.
 2001-2012 Microchip Technology Inc.
TC2014/2015/2185
3.0
PIN DESCRIPTIONS
The descriptions of the pins are described in Table 3-1.
TABLE 3-1:
Pin No.
PIN FUNCTION TABLE
Symbol
Description
1
VIN
2
GND
3
SHDN
Shutdown control input
4
Bypass
Reference bypass input
5
VOUT
3.1
Shutdown Control Input (SHDN)
The regulator is fully enabled when a logic-high is
applied to SHDN. The regulator enters shutdown when
a logic-low is applied to this input. During shutdown, the
output voltage falls to zero and the supply current is
reduced to 0.5 µA (max).
Unregulated supply input
Ground terminal
Regulated voltage output
Unregulated Supply Input (VIN)
Connect the unregulated input supply to the VIN pin. If
there is a large distance between the input supply and
the LDO regulator, some input capacitance is necessary for proper operation. A 1 µF capacitor, connected
from VIN to ground, is recommended for most
applications.
3.2
3.3
Ground Terminal (GND)
3.4
Reference Bypass Input (Bypass)
Connecting a low-value ceramic capacitor to Bypass
will further reduce output voltage noise and improve the
Power Supply Ripple Rejection (PSRR) performance
of the LDO. Typical values from 470 pF to 0.01 µF are
suggested. While smaller and larger values can be
used, these affect the speed at which the LDO output
voltage rises when input power is applied. The larger
the bypass capacitor, the slower the output voltage will
rise.
3.5
Regulated Voltage Output (VOUT)
Connect the output load to VOUT of the LDO. Also connect one side of the LDO output de-coupling capacitor
as close as possible to the VOUT pin.
Connect the unregulated input supply ground return to
GND. Also connect one side of the 1 µF typical input
decoupling capacitor close to this pin and one side of
the output capacitor COUT to this pin.
 2001-2012 Microchip Technology Inc.
DS21662F-page 9
TC2014/2015/2185
4.0
DETAILED DESCRIPTION
4.1
Bypass Input
The TC2014, TC2015 and TC2185 are precision fixedoutput voltage regulators (if an adjustable version is
needed, see the TC1070, TC1071 and TC1187
(DS21353) data sheet). Unlike bipolar regulators, the
TC2014, TC2015 and TC2185 supply current does not
increase with load current. In addition, the LDO’s output voltage is stable using 1 µF of ceramic or tantalum
capacitance over the entire specified input voltage
range and output current range.
A 0.01 µF ceramic capacitor, connected from the
Bypass input to ground, reduces noise present on the
internal reference, which, in turn, significantly reduces
output noise. If output noise is not a concern, this input
may be left unconnected. Larger capacitor values may
be used, but the result is a longer time period to rated
output voltage when power is initially applied.
Figure 4-1 shows a typical application circuit. The regulator is enabled anytime the shutdown input (SHDN)
is at or above VIH, and disabled (shutdown) when
SHDN is at or below VIL. SHDN may be controlled by a
CMOS logic gate or I/O port of a microcontroller. If the
SHDN input is not required, it should be connected
directly to the input supply. While in shutdown, the
supply current decreases to 0.05 µA (typical) and VOUT
falls to zero volts.
A 1 µF (min) capacitor from VOUT to ground is required.
The output capacitor should have an Effective Series
Resistance (ESR) of 0.01 to 5 for VOUT  2.5V, and
0.05. to 5 for VOUT < 2.5V. Ceramic, tantalum or aluminum electrolytic capacitors can be used. When using
ceramic capacitors, X5R and X7R dielectric material
are recommended due to their stable tolerance over
temperature. However, other dielectrics can be used as
long as the minimum output capacitance is maintained.
1
+
VOUT
VIN
VOUT
+
1 µF
1 µF
Battery
4.3
5
+
2
3
GND
TC2014
TC2015
TC2185
SHDN
Bypass
4.2
4
Output Capacitor
Input Capacitor
A 1 µF capacitor should be connected from VIN to GND
if there is more than 10 inches of wire between the regulator and this AC filter capacitor, or if a battery is used
as the power source. Aluminum electrolytic or tantalum
capacitors can be used (since many aluminum electrolytic capacitors freeze at approximately -30°C, solid
tantalum are recommended for applications operating
below -25°C). When operating from sources other than
batteries, supply-noise rejection and transient
response can be improved by increasing the value of
the input and output capacitors and employing passive
filtering techniques.
0.01 µF
Reference
Bypass Cap
(Optional)
Shutdown Control
(from Power Control Logic)
FIGURE 4-1:
DS21662F-page 10
Typical Application Circuit.
 2001-2012 Microchip Technology Inc.
TC2014/2015/2185
5.0
THERMAL CONSIDERATIONS
5.1
Thermal Shutdown
Integrated thermal protection circuitry shuts the regulator off when the die temperature exceeds approximately 160°C. The regulator remains off until the die
temperature cools to approximatley 150°C.
5.2
The PD equation can be used in conjunction with the
PDMAX equation to ensure that regulator thermal
operation is within limits. For example:
Given:
P D   VINMAX – V OUTMIN I LMAX
= Worst-case actual power dissipation
VINMAX
= Maximum voltage on VIN
VOUTMIN = Minimum regulator output voltage
ILMAX
= Maximum output (load) current
The maximum allowable power dissipation (PDMAX) is
a function of the maximum ambient temperature
(TAMAX), the maximum allowable die temperature
(TJMAX) (+125°C) and the thermal resistance from junction-to-air (JA). The 5-Pin SOT-23A package has a JA
of approximately 220°C/Watt when mounted on a
typical two-layer FR4 dielectric copper-clad PC board.
EQUATION 5-2:
T JMAX – T AMAX
P DMAX = ------------------------------------- JA
= 2.7V – 2.5%
TJMAX
= +125°C
TAMAX
= +55°C
1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
PD =  V INMAX – V OUTMIN I LMAX
Where:
PD
VOUTMIN
Find:
The following equation is used to calculate worst-case
power dissipation.
EQUATION 5-1:
= 3.0V +10%
ILOADMAX = 40 mA
Power Dissipation
The amount of power the regulator dissipates is primarily a function of input voltage, output voltage and output
current.
VINMAX
=   3.0  1.1  –  2.7  0.975  40  10
–3
= 26.7mW
Maximum allowable power dissipation:
T JMAX – T AMAX
P DMAX = ------------------------------------- JA
125 – 55
= --------------------220
= 318mW
In this example, the TC2014 dissipates a maximum of
only 26.7 mW; far below the allowable limit of 318 mW.
In a similar manner, the PD and PDMAX equations can
be used to calculate maximum current and/or input
voltage limits.
5.3
Layout Considerations
Where all terms are previously defined.
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads and wide power
supply bus lines combine to lower JA and, therefore,
increase the maximum allowable power dissipation
limit.
 2001-2012 Microchip Technology Inc.
DS21662F-page 11
TC2014/2015/2185
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
TABLE 6-1:

 &  represents part number code + temperature
range and voltage


6.2
PART NUMBER CODE AND
TEMPERATURE RANGE
(V)
TC2014
TC2015
TC2185
1.8
PA
RA
UA
2.5
PB
RB
UB
2.6
PH
RH
UH
2.7
PC
RC
UC
2.8
PD
RD
UD
2.85
PE
RE
UE
3.0
PF
RF
UF
3.3
PG
RG
UG
5.0
PJ
RJ
UJ
represents year and 2-month period code
represents lot ID number
Taping Form
Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices
User Direction of Feed
Device
Marking
W
PIN 1
P
Standard Reel Component Orientation
for 713 Suffix Device
(Mark Right Side Up)
Carrier Tape, Number of Components Per Reel and Reel Size:
Package
5-Pin SOT-23A
DS21662F-page 12
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
8 mm
4 mm
3000
7 in.
 2001-2012 Microchip Technology Inc.
TC2014/2015/2185
5-Lead Plastic Small Outline Transistor (OT) (SOT23)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E
E1
p
B
p1
n
D
1

c
A

L

A1
INCHES*
Units
Dimension Limits
MIN
Pitch
.038
Outside lead pitch (basic)
p1
.075
Overall Height
MILLIMETERS
NOM
n
p
Number of Pins
A2
MAX
MIN
NOM
5
MAX
5
0.95
1.90
A
.035
.046
.057
0.90
1.18
Molded Package Thickness
A2
.035
.043
.051
0.90
1.10
1.45
1.30
Standoff
A1
.000
.003
.006
0.00
0.08
0.15
3.00
Overall Width
E
.102
.110
.118
2.60
2.80
Molded Package Width
E1
.059
.064
.069
1.50
1.63
1.75
Overall Length
D
.110
.116
.122
2.80
2.95
3.10
Foot Length
L
f
.014
.022
0.35
Foot Angle
Lead Thickness
c
.004
Lead Width
B
a
.014
Mold Draft Angle Top
Mold Draft Angle Bottom
b
.018
0
5
.006
.017
10
0.45
0
0.55
5
.008
0.09
0.15
.020
0.35
0.43
10
0.20
0.50
0
5
10
0
5
10
0
5
10
0
5
10
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" (0.127mm) per side.
EIAJ Equivalent: SC-74A
Revised 09-12-05
Drawing No. C04-091
 2001-2012 Microchip Technology Inc.
DS21662F-page 13
TC2014/2015/2185
NOTES:
DS21662F-page 14
 2001-2012 Microchip Technology Inc.
TC2014/2015/2185
APPENDIX A:
REVISION HISTORY
Revision F (December 2012)
• Added a note to each package outline drawing.
Revision E (May 2006)
• Page 1: Added overtemperature to bullet for overcurrent protection in features and general description verbiage.
• Page 3: Added Thermal Shutdown die Temperature to electrical characteristics table.
• Page 3: Added Thermal Characteristics Table.
• Page 5: Added new section 5.1 and new verbiage.
• Page 13: Updated package outline drawing.
Revision D (November 2004)
• Page 2: Changed Absolute Maximum Ratings
from 6.5V to 7.0V.
• Packaging Information: Added package codes for
2.6V and 5.0V options.
• Product Identification System: Added 2.6V and
5.0V to Output voltage options.
Revision C (December 2002)
• Numerous changes
Revision B (May 2002)
• Numerous changes
Revision A (May 2001)
• Original Release of this Document.
 2001-2012 Microchip Technology Inc.
DS21662F-page 15
TC2014/2015/2185
NOTES:
DS21662F-page 16
 2001-2012 Microchip Technology Inc.
TC2014/2015/2185
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
-XX
X
XXXX
Device
Output
Voltage
Temperature
Range
Package
Device:
TC2014:
TC2015:
TC2185:
50 mA LDO with Shutdown and VREF Bypass
100 mA LDO with Shutdown and VREF Bypass
150 mA LDO with Shutdown and VREF Bypass
Output Voltage:
XX
XX
XX
XX
XX
XX
XX
XX
XX
=
=
=
=
=
=
=
=
=
Temperature Range:
V
= -40°C to +125°C
Package:
CTTR = Plastic Small Outline Transistor (SOT-23),
5-lead, Tape and Reel
1.8V
2.5V
2.6V
2.7V
2.8V
2.85V
3.0V
3.3V
5.0V
 2001-2012 Microchip Technology Inc.
Examples:
a)
TC2014-1.8VCTTR: 5LD SOT-23-A, 1.8V,
Tape and Reel.
b)
TC2014-2.85VCTTR: 5LD SOT-23-A, 2.85V,
Tape and Reel.
c)
TC2014-3.3VCTTR: 5LD SOT-23-A, 3.3V,
Tape and Reel.
a)
TC2015-1.8VCTTR: 5LD SOT-23-A, 1.8V,
Tape and Reel.
b)
TC2015-2.85VCTTR: 5LD SOT-23-A, 2.85V,
Tape and Reel.
c)
TC2015-3.0VCTTR: 5LD SOT-23-A, 3.0V,
Tape and Reel.
a)
TC2185-1.8VCTTR: 5LD SOT-23-A, 1.8V,
Tape and Reel.
b)
TC2185-2.8VCTTR: 5LD SOT-23-A, 2.8V,
Tape and Reel.
DS21662F-page 17
TC2014/2015/2185
NOTES:
DS21662F-page 18
 2001-2012 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2001-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620768884
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2001-2012 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21662F-page 19
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
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Tel: 774-760-0087
Fax: 774-760-0088
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Tel: 630-285-0071
Fax: 630-285-0075
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Tel: 216-447-0464
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Tel: 972-818-7423
Fax: 972-818-2924
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Tel: 248-538-2250
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Fax: 949-462-9608
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Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
DS21662F-page 20
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
11/29/12
 2001-2012 Microchip Technology Inc.