TCET1600 up to TCET4600 Vishay Telefunken Optocoupler with Phototransistor Output Description The TCET1600/ TCET2600/ TCET4600 consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in a 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14925 D For appl. class I – IV at mains voltage ≤ 300 V D For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for: Coll. Emitter Computer peripheral interface, microprocessor system interface, telecom equipment. These couplers perform safety functions according to the following equipment standards: D VDE 0884 13947 VDE Standards Anode Cath. 4 PIN Optocoupler for electrical safety requirements 8 PIN 16 PIN D IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) D VDE 0804 Telecommunication apparatus and data processing D IEC 65 C Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code CTR Ranking TCET1600/ TCET1600G1) >20% TCET2600 >20% TCET4600 >20% 1) G = Leadform 10.16 mm; G is not market on the body Rev. A4, 11–Jan–99 Remarks 4 Pin = Single channel 8 Pin = Dual channel 16 Pin = Quad channel 253 TCET1600 up to TCET4600 Vishay Telefunken Features D Creepage current resistance according to Approvals: D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D FIMKO (SETI): EN 60950, VDE 0303/IEC 112 Comparative Tracking Index: CTI ≥ 175 D Thickness though insulation ≥ 0.75 mm D Internal creepage distance > 4 mm Certificate number 11027 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 – Double Protection D CSA (C–UL) 1577recognized, General features: D Isolation materials according to UL94-VO D Pollution degree 2 file number E-76222 – Double Protection D VDE 0884, Certificate number 115667 (DIN/VDE 0110 /resp. IEC 664) VDE 0884 related features: D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak D Isolation test voltage (partical discharge test voltage) Vpd = 1.6 kV peak D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D G = Leadform 10.16 mm; provides creepage distance > 8 mm, for TCET2600/ TCET4600 optional; suffix letter ‘G’ is not marked on the optocoupler D Coupling System U Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 6 ±60 ±1.5 100 125 Unit V mA A mW °C Symbol VCEO VECO IC ICM PV Tj Value 70 7 50 100 150 125 Unit V V mA mA mW °C Symbol VIO Ptot Tamb Tstg Tsd Value 5 250 –40 to +100 –55 to +125 260 Unit kV mW °C °C °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Test Conditions Isolation test voltage (RMS) t = 1 min Total power dissipation Tamb ≤ 25°C Operating ambient temperature range Storage temperature range Soldering temperature 2 mm from case t ≤ 10 s 254 Rev. A4, 11–Jan–99 TCET1600 up to TCET4600 Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = ± 50 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Test Conditions IC = 100 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VCEO ICEO Min. 70 7 Typ. Max. 100 Unit V V nA Test Conditions IF ± 10 mA, IC = 1 mA Symbol VCEsat Min. Max. 0.3 Unit V VCE = 5 V, IF ± 10 mA, RL = 100 W f = 1 MHz fc 100 kHz Ck 0.3 pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Typ. Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = ± 5 mA Rev. A4, 11–Jan–99 Type TCET1600 up to TCET4600 Symbol CTR Min. 0.20 Typ. Max. 3.0 Unit 255 TCET1600 up to TCET4600 Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Test Conditions Tamb ≤ 25°C Symbol Psi Value 265 Unit mW Test Conditions Symbol VIOTM Tsi Value 8 150 Unit kV °C Output (Detector) Parameters Power dissipation Coupler Parameters Rated impulse voltage Safety temperature Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Partial discharge test voltage – 100%, ttest = 1 s Routine test Partial discharge g test voltage g – tTr = 60 s, ttest = 10 s, Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb = 150°C Symbol Vpd Min. 1.6 VIOTM Vpd RIO RIO 8 1.3 10 12 10 11 RIO 10 9 Typ. Max. Unit kV kV kV W W W VIOTM 300 V t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s Phototransistor Psi ( mW ) 250 200 VPd 150 VIOWM VIORM 100 IR-Diode Isi ( mA ) 50 P tot – Total Power Dissipation ( mW ) (construction test only) 0 t3 ttest t4 0 0 94 9182 25 50 75 100 Tsi – Safety Temperature ( °C ) Figure 1. Derating diagram 256 125 150 t1 13930 tTr = 60 s t2 tstres t Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 Rev. A4, 11–Jan–99 TCET1600 up to TCET4600 Vishay Telefunken Switching Characteristics Parameter Delay time Rise time Turn-on time Storage time Fall time Turn-off time Turn-on time Turn-off time IF 0 Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W ((see figure g 3)) Symbol td tr ton ts tf toff ton toff VS = 5 V, IF = 10 mA, RL = 1 kW ((see figure g 4)) Typ. 3.0 3.0 6.0 0.3 4.7 5.0 9.0 10.0 +5V IF IC = 2 mA ; RG = 50 W tp T = 0.01 tp = 50 ms Unit ms ms ms ms ms ms ms ms 96 11698 adjusted through input amplitude IF 0 t tp IC Channel I 50 W 100 W Channel II Oscilloscope RL > 1 MW CL < 20 pF 100% 90% 13343 Figure 3. Test circuit, non-saturated operation 10% 0 t tr td IF 0 IF = 10 mA +5V ton IC RG = 50 W tp T = 0.01 tp = 50 ms Channel I 50 W 1 kW Channel II ts tp tion td tr ton (= td + tr) tf toff pulse duradelay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time Oscilloscope RL > 1 MW CL < 20 pF 13344 Figure 4. Test circuit, saturated operation Rev. A4, 11–Jan–99 Figure 5. Switching times 257 TCET1600 up to TCET4600 Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10000 Coupled device ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 300 250 200 Phototransistor 150 IR-diode 100 50 VCE=20V IF=0 1000 100 10 0 1 0 40 80 120 Tamb – Ambient Temperature ( °C ) 96 11700 0 IC – Collector Current ( mA ) I F – Forward Current ( mA ) 100 100.0 10.0 1.0 0.1 10 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 96 11862 0.1 100 10 Figure 10. Collector Current vs. Forward Current 2.0 100 20mA IC – Collector Current ( mA ) VCE=5V IF=5mA 1.5 1.0 0.5 0 –25 1 IF – Forward Current ( mA ) 95 11027 Figure 7. Forward Current vs. Forward Voltage CTR rel – Relative Current Transfer Ratio VCE=5V 0.01 0 IF=50mA 10mA 10 5mA 2mA 1 1mA 0.1 0 25 50 75 Tamb – Ambient Temperature ( °C ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature 258 100 75 Figure 9. Collector Dark Current vs. Ambient Temperature 1000.0 95 11025 50 Tamb – Ambient Temperature ( °C ) 95 11026 Figure 6. Total Power Dissipation vs. Ambient Temperature 25 0.1 95 10985 1 10 100 VCE – Collector Emitter Voltage ( V ) Figure 11. Collector Current vs. Collector Emitter Voltage Rev. A4, 11–Jan–99 TCET1600 up to TCET4600 1.0 t on / t off – Turn on / Turn off Time ( m s ) VCEsat – Collector Emitter Saturation Voltage ( V ) Vishay Telefunken 20% 0.8 CTR=50% 0.6 0.4 0.2 10% 0 1 30 toff 20 10 100 10 IC – Collector Current ( mA ) ton 0 5 VCE=5V 100 10 15 20 Figure 14. Turn on / off Time vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) 1000 10 IF – Forward Current ( mA ) 95 11031 Figure 12. Collector Emitter Saturation Voltage vs. Collector Current CTR – Current Transfer Ratio ( % ) Saturated Operation VS=5V RL=1kW 40 0 95 11028 1 10 8 Non Saturated Operation VS=5V RL=100W ton 6 toff 4 2 0 0.1 95 11029 50 1 100 10 IF – Forward Current ( mA ) Figure 13. Current Transfer Ratio vs. Forward Current Pin 1 Indication 0 95 11030 2 4 6 10 IC – Collector Current ( mA ) Figure 15. Turn on / off Time vs. Collector Current Type ET1600 820UTK63 15082 Date Code (YM) Coupling System Indicator Company Logo Production Location Figure 16. Marking example Rev. A4, 11–Jan–99 259 TCET1600 up to TCET4600 Vishay Telefunken Dimensions of TCET1600 in mm y y weight: creepage distance: air path: ca. 0.25 g 6 mm 6 mm after mounting on PC board 14789 Dimensions of TCET1600G in mm weight: creepage distance: air path: y y ca. 0.25 g 8 mm 8 mm after mounting on PC board 14792 260 Rev. A4, 11–Jan–99 TCET1600 up to TCET4600 Vishay Telefunken Dimensions of TCET2600 in mm weight: creepage distance: air path: y y ca. 0.55 g 6 mm 6 mm after mounting on PC board 14784 Dimensions of TCET4600 in mm 14784 weight: creepage distance: air path: y y ca. 1.0 g 6 mm 6 mm after mounting on PC board 14783 Rev. A4, 11–Jan–99 261