TCR2EN series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EN series 200 mA CMOS Low Drop-Out Regulator in ultra small package The TCR2EN series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low quiescent bias current and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 3.6 V and capable of driving up to 200 mA. They feature overcurrent protection and an Auto-discharge function. The TCR2EN series is offered in the ultra small plastic mold package SDFN4 ( 0.8 mm x 0.8 mm x 0.38 mm). It has a low dropout voltage of 160 mV ( 2.5 V output, IOUT = 150 mA) with low output noise voltage of 35 μδVrms (2.5 V output) and a load transient response of only ⊿VOUT = ±55 mV ( IOUT = 1 mA⇔150 mA, COUT =1.0 μF). As small ceramic input and output capacitors can be used with the TCR2EN series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. BOTTOM VIEW ILLUSTRATION SDFN4 Weight : 0.6 mg ( typ.) Features • Low Drop-Out voltage VIN-VOUT = 160 mV (typ.) at 2.5 V-output, IOUT = 150 mA VIN-VOUT = 210 mV (typ.) at 1.8 V-output, IOUT = 150 mA VIN-VOUT = 360 mV (typ.) at 1.2 V-output, IOUT = 150 mA VIN-VOUT = 490 mV (typ.) at 1.0 V-output, IOUT = 150 mA • Low output noise voltage VNO = 35 μVrms (typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz VNO = 30 μVrms (typ.) at 1.8 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz VNO = 23 μVrms (typ.) at 1.2 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz VNO = 18 μVrms (typ.) at 1.0 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz • Fast load transient response (⊿VOUT = ±55 mV (typ.) at IOUT = 1 ⇔ 150 mA, COUT =1.0 μF ) • Low quiescent bias current ( IB = 35 μA (typ.) at IOUT = 0 mA ) • High ripple rejection ( R.R = 73 dB (typ.) at 2.5V-output, IOUT = 10 mA, f =1kHz ) • Wide range Output Voltage line up ( VOUT = 1.0 to 3.6 V ) • High VOUT accuracy ±1.0% • Overcurrent protection • Auto-discharge • Pull down connection between CONTROL and GND ( 1.8V <= VOUT ) • Ceramic capacitors can be used ( CIN = 0.1μF, COUT =1.0 μF ) • Ultra Small package SDFN4 (0.8 mm x 0.8 mm x 0.38 mm ) 1 2012-05-23 TCR2EN series Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 5.5 V Control voltage VCT -0.3 to 5.5 V Output voltage VOUT -0.3 to VIN + 0.3 V Output current IOUT 200 mA Power dissipation PD 300 Operation temperature range Topr −40 to 85 °C Tj 150 °C Tstg −55 to 150 °C Junction temperature Storage temperature range (Note1) mW Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40mm x 40mm x 1.8mm, both sides of board Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole hall: diameter 0.5mm x 24 Pin Assignment (top view) VIN CONTROL 4 3 * 1 2 VOUT GND *Center electrode should be connected to GND or Open 2 2012-05-23 TCR2EN series List of Products Number, Output voltage and Marking Product No. Output voltage(V) (typ.) Marking Product No. Output voltage(V) (typ.) Marking TCR2EN10 1.0 NJ TCR2EN23* 2.3 NK TCR2EN105* 1.05 NU TCR2EN24* 2.4 NL TCR2EN11 1.1 N2 TCR2EN25 2.5 NM TCR2EN115* 1.15 NC TCR2EN26* 2.6 NN TCR2EN12 1.2 N3 TCR2EN27 2.7 NO TCR2EN125 1.25 NQ TCR2EN28 2.8 NP TCR2EN13 1.3 N4 TCR2EN285* 2.85 N7 TCR2EN14* 1.4 N5 TCR2EN29 2.9 NR TCR2EN15 1.5 NA TCR2EN295* 2.95 N6 TCR2EN16* 1.6 NB TCR2EN30 3.0 NS TCR2EN17* 1.7 ND TCR2EN31 3.1 NT TCR2EN18 1.8 NE TCR2EN32* 3.2 NV TCR2EN19* 1.9 NF TCR2EN33 3.3 NW TCR2EN20* 2.0 NG TCR2EN34* 3.4 NX TCR2EN21 2.1 NH TCR2EN35* 3.5 NY TCR2EN22* 2.2 NI TCR2EN36 3.6 NZ * Please contact your local Toshiba representative if you are interested in products with * sign Marking Example: TCR2EN33 (3.3 V output) NW Lot. No. INDEX 3 2012-05-23 TCR2EN series Electrical Characteristics (Unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 0.1 μF, COUT = 1.0 μF, Tj = 25°C) Characteristics Output voltage accuracy Input voltage Symbol VOUT VIN Test Condition Min Typ. Max Unit VOUT <1.8 V -18 ⎯ +18 mV 1.8V < = VOUT -1.0 ⎯ +1.0 % IOUT = 1 mA 1.5 ⎯ 5.5 V VOUT + 0.5 V < = VIN < = 5.5 V, IOUT = 1 mA ⎯ 1 15 mV IOUT = 50 mA (Note2) Line regulation Reg・line Load regulation Reg・load 1 mA < = IOUT < = 150 mA ⎯ 15 30 mV IOUT = 0 mA ⎯ 35 60 μA VCT = 0 V ⎯ 0.1 1.0 μA ⎯ 160 210 mV ⎯ 75 ⎯ ppm/°C Quiescent current Stand-by current Drop-out voltage Temperature coefficient IB IB (OFF) VIN-VOUT IOUT = 150 mA (Note 3) TCVO −40°C < = Topr < = 85°C Output noise voltage VNO VIN = VOUT + 1 V, IOUT = 10 mA, 10 Hz < =f< = 100 kHz, Ta = 25°C (Note 3) ⎯ 35 ⎯ μVrms Ripple rejection ratio R.R. VIN = VOUT + 1 V, IOUT = 10 mA, f = 1 kHz, VRipple = 500 mVp-p, Ta = 25°C (Note 3) ⎯ 73 ⎯ dB Load transient response ⊿VOUT IOUT = 1⇔150mA, COUT = 1.0 μF ⎯ ±55 ⎯ mV Control voltage (ON) VCT (ON) ⎯ 1.0 ⎯ 5.5 V Control voltage (OFF) VCT (OFF) ⎯ 0 ⎯ 0.4 V Note 2: Stable state with fixed IOUT condition Note 3: The 2.5 V output product Drop-out voltage for different output voltages (IOUT = 150 mA, CIN = 0.1 μF, COUT = 1.0 μF, Tj = 25°C) Output voltages Min Typ. Max 1.0 V, 1.05 V ⎯ 490 750 1.1 V, 1.15 V ⎯ 420 650 1.2 V, 1.25 V ⎯ 360 550 1.3 V ⎯ 330 450 ⎯ 290 400 1.5 V < = VOUT < 1.8 V ⎯ 270 370 1.8 V < = VOUT < 2.5 V ⎯ 210 290 2.5 V < = VOUT < 3.0 V ⎯ 160 210 3.0 V < = VOUT < = 3.6 V ⎯ 130 180 1.4 V Symbol VIN-VOUT 4 Unit mV 2012-05-23 TCR2EN series Application Note 1. Recommended Application Circuit CONTROL GND VOUT VIN 1.0 μF 0.1 μF CONTROL voltage Output voltage HIGH ON LOW OFF OPEN OFF The figure above shows the recommended configuration for using a Low-Dropout regulator. Insert a capacitor at VOUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used). 2. Power Dissipation Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy(FR4) Board dimension: 40mm x 40mm (both sides of board),t=1.8mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5mm x 24 Power dissipation PD (mW) 400 300 200 100 0 −40 0 40 Ambient temperature Ta 5 80 120 (℃) 2012-05-23 TCR2EN series Usage Considerations ● Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. And Toshiba recommend the ESR of ceramic capacitor is under 10 Ω. ● Mounting The long distance between IC and output capacitor might affect phase assurance by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need to be large and make the wire impedance small as possible. ● Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of surrounding temperature, input voltage, and output current etc, we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80 percent. ● Overcurrent Protection Circuit Overcurrent protection circuit is designed in these products, but this does not assure for the suppression of uprising device operation. If output pins and GND pins are shorted out, these products might be break down. In use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommend inserting failsafe system into the design. 6 2012-05-23 TCR2EN series Representative Typical Characteristics 1) Output Voltage vs. Input Voltage VOUT=1.8V VOUT (V) CIN = 0.1 μF, COUT = 1 μF IOUT = 1mA Output voltage Output voltage VOUT (V) VOUT=1.2V IOUT = 50mA IOUT = 150mA Input voltage VIN (V) CIN = 0.1 μF, COUT = 1 μF IOUT = 1mA IOUT = 50mA IOUT = 150mA Input voltage VOUT=2.5V VOUT=3.0V VOUT (V) CIN = 0.1 μF, COUT = 1 μF IOUT = 1mA Output voltage Output voltage VOUT (V) CIN = 0.1 μF, COUT = 1 μF IOUT = 50mA IOUT = 150mA Input voltage VIN (V) VIN (V) IOUT = 1mA IOUT = 50mA IOUT = 150mA Input voltage VIN (V) 2) Output Voltage vs. Output Current VOUT=1.8V VIN = 2.8 V, CIN = 0.1 μF, COUT = 1 μF CIN = 0.1 μF, COUT = 1 μF Output voltage VOUT (V) VIN = 2.2 V, Output voltage VOUT (V) VOUT=1.2V Output current IOUT (mA) Output current 7 IOUT (mA) 2012-05-23 VOUT=3.0V VIN = 3.5 V, VIN = 4.0 V, CIN = 0.1 μF, COUT = 1 μF CIN = 0.1 μF, COUT = 1 μF Output voltage VOUT (V) VOUT=2.5V Output voltage VOUT (V) TCR2EN series Output current IOUT Output current (mA) IOUT (mA) 3) Output Voltage vs. Ambient Temperature VOUT=1.8V VOUT=1.2V VIN = 2.8 V, VOUT (V) CIN = 0.1 μF, COUT = 1 μF Ambient temperature Ta Ambient temperature (℃) VOUT=2.5V Ta (℃) VOUT=3.0V VIN = 4.0 V, VIN = 3.5 V, VOUT (V) CIN = 0.1 μF, COUT = 1 μF IOUT = 50mA CIN = 0.1 μF, COUT = 1 μF IOUT = 50mA Output voltage Output voltage VOUT (V) CIN = 0.1 μF, COUT = 1 μF IOUT = 50mA Output voltage IOUT = 50mA Output voltage VOUT (V) VIN = 2.2 V, Ambient temperature Ta Ambient temperature (℃) 8 Ta (℃) 2012-05-23 TCR2EN series 4) Dropout Voltage vs. Output Current VOUT=1.8V Dropout voltage VIN - VOUT (mV) Dropout voltage VIN - VOUT (mV) VOUT=1.2V CIN = 0.1 μF, COUT = 1 μF Output current IOUT (mA) Output current CIN = 0.1 μF, COUT = 1 μF IOUT IOUT (mA) VOUT=3.0V Dropout voltage VIN - VOUT (mV) Dropout voltage VIN - VOUT (mV) VOUT=2.5V Output current CIN = 0.1 μF, COUT = 1 μF (mA) CIN = 0.1 μF, COUT = 1 μF Output current IOUT (mA) 5) Quiescent Current vs. Input Voltage VOUT=1.8V IB (μA) CIN = 0.1 μF, COUT = 1 μF CIN = 0.1 μF, COUT = 1 μF IOUT = 0mA Quiescent current IOUT = 0mA Quiescent current IB (μA) VOUT=1.2V Input voltage VIN (V) Input voltage 9 VIN (V) 2012-05-23 TCR2EN series VOUT=2.5V VOUT=3.0V IB (μA) CIN = 0.1 μF, COUT = 1 μF IOUT = 0mA Quiescent current Quiescent current IB (μA) CIN = 0.1 μF, COUT = 1 μF IOUT = 0mA Input voltage VIN (V) Input voltage VIN (V) 6) Quiescent Current vs. Ambient Temperature VOUT=1.8V IB (μA) VIN = 2.2 V CIN = 0.1 μF, COUT = 1 μF Ambient temperature Ta CIN = 0.1 μF, COUT = 1 μF IOUT = 0mA Ambient temperature (℃) Ta (℃) VOUT=3.0V VOUT=2.5V VIN = 4.0V IB (μA) VIN = 3.5 V CIN = 0.1 μF, COUT = 1 μF CIN = 0.1 μF, COUT = 1 μF IOUT = 0mA Quiescent current IOUT = 0mA Quiescent current IB (μA) VIN = 2.8V Quiescent current IOUT = 0mA Quiescent current IB (μA) VOUT=1.2V Ambient temperature Ta (℃) Ambient temperature 10 Ta (℃) 2012-05-23 TCR2EN series 7) Output Voltage vs. Output Current VOUT=1.8V VOUT=1.2V Pulse width = 1 ms Output voltage Output voltage VOUT (V) VOUT (V) Pulse width = 1 ms VIN = 5.5V VIN = 2.2V Output current IOUT VIN = 5.5V VIN = 2.8V Output current (mA) (mA) VOUT=3.0V VOUT=2.5V Pulse width = 1 ms VOUT (V) VOUT (V) Pulse width = 1 ms VIN = 5.5V Output voltage Output voltage IOUT VIN = 3.5V Output current IOUT VIN = 5.5V VIN = 4.0V Output current (mA) IOUT (mA) 8) Ripple Rejection Ratio vs. Frequency VOUT=3.0V Ripple rejection Ripple rejection (dB) (dB) VOUT=1.2V VIN = 2.2 V ,Vripple = 500 mVp−p CIN = none, COUT = 1μF IOUT = 10 mA, Ta = 25°C Frequency f VIN = 4.0 V ,Vripple = 500 mVp−p CIN = none, COUT = 1μF IOUT = 10 mA, Ta = 25°C Frequency f (Hz) 11 (Hz) 2012-05-23 TCR2EN series 9) Control Transient Response VIN = 2.2 V, CIN = 0.1 μF, COUT = 1 μF Control voltage 2.0 VOUT=1.8V 1.0 0 IOUT = 1mA 2.0 Output voltage Output voltage Control voltage VOUT=1.2V 1.0 0 IOUT = 50mA IOUT = 150mA 2.0 1.0 0 1.0 0 Control voltage 2.0 VIN = 4.0 V, CIN = 0.1 μF, COUT = 1 μF 1.0 0 0 IOUT = 1mA 3.0 IOUT = 1mA Output voltage Control voltage VIN = 3.5 V, CIN = 0.1 μF, COUT = 1 μF 3.0 Output voltage IOUT = 150mA VOUT=3.0V 1.0 2.0 0 IOUT = 50mA Time t (25 μs/div) VOUT=2.5V 1.0 IOUT = 1mA 2.0 Time t (25 μs/div) 2.0 VIN = 2.8 V, CIN = 0.1 μF, COUT = 1 μF IOUT = 50mA IOUT = 150mA Time t (25 μs/div) 2.0 1.0 IOUT = 50mA 0 IOUT = 150mA Time t (25 μs/div) 12 2012-05-23 TCR2EN series 10) Load Transient Response VIN = 2.2 V, CIN = 0.1 μF, COUT = 1 μF Output current 400 VOUT=1.8V (IOUT = 1mA ⇔ 150mA) 200 0 Output voltage 1.3 1.2 1.1 200 0 1.9 1.8 1.7 Time t (25 μs/div) VOUT=2.5V (IOUT = 1mA ⇔ 150mA) VOUT=3.0V (IOUT = 1mA ⇔ 150mA) VIN = 3.5 V, CIN = 0.1 μF, COUT = 1 μF Output current 400 400 VIN = 2.8 V, CIN = 0.1 μF, COUT = 1 μF Time t (25 μs/div) 200 0 2.6 Output voltage Output voltage Output current Output voltage Output current VOUT=1.2V (IOUT = 1mA ⇔ 150mA) 2.5 2.4 Time t (25 μs/div) 400 VIN = 4.0 V, CIN = 0.1 μF, COUT = 1 μF 200 0 3.1 3.0 2.9 Time t (25 μs/div) 13 2012-05-23 TCR2EN series Package Dimensions SDFN4 Unit:mm 0.04 mm (typ.) unevenness exists along the edges of the back electrode to increase shear after soldering. Weight : 0.6 mg ( typ.) 14 2012-05-23 TCR2EN series RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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