TCR4S12DWBG~TCR4S36DWBG TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR4S12DWBG~TCR4S36DWBG 200 mA CMOS Low-Dropout Regulator The TCR4S12DWBG to TCR4S36DWBG are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage and low quiescent bias current. The TCR4S12WBG to TCR4S36WBG can be enabled and disabled via the CONTROL pin. These voltage regulators are available in fixed output voltages between 1.2 V and 3.6 V in 0.05-V steps and capable of driving up to 200 mA. They feature overcurrent protection and auto-discharge. The TCR4S12DWBG to TCR4S36DWBG are offered in the compact WCSP ( 0.79 mm x 0.79 mm x 0.50 mm ) and allow the use of small ceramic input and output capacitors. Thus, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. S-UFBGA4-0101-0.40A01 WCSP4 Weight: 0.7 mg (typ) Features • Low quiescent bias current ( IB = 50 μA (typ.) at IOUT = 0 mA ) • Low stand-by current ( IB(OFF) = 0.1 μA (typ.) at Stand-by mode ) • Low dropout voltage ( VIN - VOUT = 90 mV (typ.) at TCR4S25DWBG, IOUT = 50 mA ) • High ripple rejection ratio ( R.R = 80 dB (typ) at IOUT = 10 mA, f =1kHz ) • Low output noise voltage (VNO = 30 μVrms (typ.) at TCR4S25DWBG, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz) • Auto-discharge • Control pull-down resistor • Overcurrent protection • Ceramic capacitors can be used ( CIN = 0.1 μF, COUT =1.0 μF ) • Very small package, WCSP ( 0.79 mm x 0.79 mm x 0.50 mm ) Pin Assignment (top view) CONTROL VIN GND VOUT 1 2010-07-30 TCR4S12DWBG~TCR4S36DWBG List of Products Number and Marking Marking (top view) Products No. Marking Products No. Marking TCR4S12DWBG B3 TCR4S26DWBG BN TCR4S13DWBG B4 TCR4S27DWBG BO TCR4S14DWBG B5 TCR4S28DWBG BP TCR4S15DWBG BA TCR4S285DWBG B7 TCR4S16DWBG BB TCR4S29DWBG BR TCR4S17DWBG BD TCR4S295DWBG B6 TCR4S18DWBG BE TCR4S30DWBG BS TCR4S19DWBG BF TCR4S31DWBG BT TCR4S20DWBG BG TCR4S32DWBG BV TCR4S21DWBG BH TCR4S33DWBG BW TCR4S22DWBG BI TCR4S34DWBG BX TCR4S23DWBG BK TCR4S35DWBG BY TCR4S24DWBG BL TCR4S36DWBG BZ TCR4S25DWBG BM Example: TCR4S15DWBG (1.5 V output) BA Index Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating 6 Unit Input voltage VIN (Note 1) Control voltage VCT -0.3 to VIN V Output voltage VOUT -0.3 to VIN + 0.3 V Output current IOUT 200 mA Power dissipation PD Operation temperature range Topr −40 to 85 °C Tj 150 °C Tstg −55 to 150 °C Junction temperature Storage temperature range 800 V (Note 2) mW Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1): VIN for 1.2 V to 1.4V output product is 5.5 V. (Note 2): Rating at mounting on a board (Glass epoxy board dimension: 40mm x 40mm, both sides of board Wireability: a surface approximately 50%, the reverse side approximately 50% Through hole hall: diameter 0.5mm x 28) 2 2010-07-30 TCR4S12DWBG~TCR4S36DWBG Electrical Characteristics (Unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 0.1 μF, COUT = 1.0 μF, Tj = 25°C)(Note 3) Characteristics Symbol Test Condition Min Typ. Max Unit 15 mV Output voltage VOUT Line regulation Reg・line Load regulation Reg・load 1 mA ≤ IOUT ≤ 150 mA ⎯ 5 30 mV IOUT = 0 mA ⎯ 50 75 μA VCT = 0 V ⎯ 0.1 1.0 μA ppm/°C Quiescent current IB Stand-by current IB (OFF) Dropout voltage VIN-VOUT Temperature coefficient TCVO Please refer to the Output Voltage Accuracy table VOUT + 0.5 V ≤ VIN ≤ 6 V, IOUT = 1 mA (Note 4) VNO −40°C ≤ Topr ≤ 85°C VIN = VOUT + 1 V, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz, Ta = 25°C to TCR4S20DWBG TCR4S21DWBG to TCR4S30DWBG TCR4S31DWBG to TCR4S36DWBG TCR4S12DWBG TCR4S13DWBG to TCR4S14DWBG TCR4S15DWBG to TCR4S19DWBG Input voltage ⎯ VIN TCR4S20DWBG to TCR4S21DWBG TCR4S22DWBG to TCR4S24DWBG TCR4S25DWBG to TCR4S36DWBG Ripple rejection ratio R.R. 1 Please refer to the Dropout voltage table TCR4S12DWBG Output noise voltage ⎯ VIN = VOUT + 1 V, IOUT = 10 mA, f = 1 kHz, VRipple = 500 mVp-p, Ta = 25°C Control voltage (ON) VCT (ON) (Note 5) Control voltage (OFF) VCT (OFF) ⎯ ⎯ 100 ⎯ ⎯ 25 ⎯ ⎯ 30 ⎯ ⎯ 35 ⎯ 1.8 ⎯ 5.5 1.85 ⎯ 5.5 VOUT + 0.35 V ⎯ 6.0 VOUT + 0.28 V ⎯ 6.0 VOUT + 0.25 V ⎯ 6.0 VOUT + 0.20 V ⎯ 6.0 ⎯ 80 ⎯ dB 1.1 ⎯ 6.0 V 0 ⎯ 0.4 V μVrms Note 3: Unless otherwise specified, VIN for 1.2V to 1.4V output product is VOUT + 0.5 V Note 4: VIN for 1.2V to 1.4V output product is VOUT + 0.5 V ≤ VIN ≤ 5.5 V Note 5: VCT (ON) of 1.2V to 1.4V output product is 5.5V (max) 3 2010-07-30 V TCR4S12DWBG~TCR4S36DWBG Output Voltage Accuracy (VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 0.1 μF, COUT = 1.0 μF, Tj = 25°C) Product No. Min Typ. Max TCR4S12DWBG 1.17 1.2 1.23 TCR4S13DWBG 1.27 1.3 1.33 TCR4S14DWBG 1.37 1.4 1.43 TCR4S15DWBG 1.47 1.5 1.53 TCR4S16DWBG 1.56 1.6 1.64 TCR4S17DWBG 1.66 1.7 1.74 TCR4S18DWBG 1.76 1.8 1.84 TCR4S19DWBG 1.86 1.9 1.94 TCR4S20DWBG 1.96 2.0 2.04 TCR4S21DWBG 2.05 2.1 2.15 TCR4S22DWBG 2.15 2.2 2.25 TCR4S23DWBG 2.25 2.3 2.35 TCR4S24DWBG 2.35 2.4 2.45 2.45 2.5 2.55 TCR4S26DWBG 2.54 2.6 2.66 TCR4S27DWBG 2.64 2.7 2.76 TCR4S28DWBG 2.74 2.8 2.86 TCR4S285DWBG 2.79 2.85 2.91 TCR4S29DWBG 2.84 2.9 2.96 TCR4S295DWBG 2.89 2.95 3.01 TCR4S30DWBG 2.94 3.0 3.06 TCR4S31DWBG 3.03 3.1 3.17 TCR4S32DWBG 3.13 3.2 3.27 TCR4S33DWBG 3.23 3.3 3.37 TCR4S34DWBG 3.33 3.4 3.47 TCR4S35DWBG 3.43 3.5 3.57 TCR4S36DWBG 3.52 3.6 3.68 TCR4S25DWBG Symbol VOUT Unit V Dropout Voltage (IOUT = 50 mA, CIN = 0.1 μF, COUT = 1.0 μF, Tj = 25°C) Product No. Min Typ. Max TCR4S12DWBG ⎯ 400 600 TCR4S13DWBG ⎯ 350 550 TCR4S14DWBG ⎯ 300 450 ⎯ 200 350 ⎯ 150 280 TCR4S22DWBG to TCR4S24DWBG ⎯ 130 250 TCR4S25DWBG to TCR4S36DWBG ⎯ 90 200 TCR4S15DWBG to TCR4S19DWBG TCR4S20DWBG to TCR4S21DWBG Symbol VIN-VOUT Unit mV 4 2010-07-30 TCR4S12DWBG~TCR4S36DWBG Application Note 1. Recommended Application (top view) CONTROL VIN 0.1 μF Control Level Operation HIGH ON LOW OFF 1.0 μF GND VOUT The figure above shows the recommended configuration for using a Low-Dropout regulator. Insert a capacitor to VOUT and VIN for stable input/output operation. (ceramic capacitors can be used) 2. Power Dissipation Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy Board dimension: 40 mm x 40 mm , both sides of board , t=1.8 mm Wireability: a surface approximately 50% the reverse side approximately 50% Through hole hall: diameter 0.5 mm x 28 PD - Ta Power Dissipation PD (mW) 1000 800 600 400 200 0 -40 0 40 80 Ambient Temperature Ta (℃) 5 120 2010-07-30 TCR4S12DWBG~TCR4S36DWBG Attention in Use ● Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. And Toshiba recommend the ESR of ceramic capacitor is under 10 Ω. ● Mounting The long distance between IC and output capacitor might affect phase assurance by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also GND pattern need to be large and make the wire impedance small as possible. ● Permissible Loss Please have enough board design patterns for expected maximum permissible loss. And under consideration of surrounding temperature, input voltage, and output current etc, please apply proper dissipation ratings for maximum permissible loss. ● Overcurrent Protection Circuit Overcurrent protection circuit is designed in these products, but this does not assure for the suppression of uprising device operation. If output pins and GND pins are shorted out, these products might be break down. In use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommend inserting failsafe system into the design. 6 2010-07-30 TCR4S12DWBG~TCR4S36DWBG Representative Typical Characteristics 1) Output Voltage vs. Input Voltage TCR4S18DWBG TCR4S15DWBG (V) IOUT = 10 mA 50 mA 1.0 Output voltage Output voltage VOUT 1.5 3 CIN = 0.1 μF, COUT = 1 μF VOUT (V) 2.0 150 mA 0.5 0 0 1 2 3 Input voltage 4 VIN 5 CIN = 0.1 μF, COUT = 1 μF 2.5 2 IOUT = 10 mA 1.5 150 mA 1 50 mA 0.5 0 0 6 1 2 3 Input voltage (V) 4 VIN 5 6 (V) TCR4S30DWBG Output voltage VOUT (V) 6 CIN = 0.1 μF, COUT = 1 μF 5 4 3 2 IOUT = 10 mA 50 mA 1 150 mA 0 0 1 2 3 Input voltage 4 VIN 5 6 (V) 2) Output Voltage vs. Output Current TCR4S18DWBG TCR4S15DWBG 1.9 VIN = 2.8 V, CIN = 0.1 μF, COUT = 1 μF CIN = 0.1 μF, COUT = 1 μF (V) VIN = 2.5 V, 1.5 1.4 0 Output voltage Output voltage VOUT VOUT (V) 1.6 20 40 60 80 1.7 0 100 120 140 160 180 200 Output current IOUT 1.8 20 40 60 80 100 120 140 160 180 200 Output current (mA) 7 IOUT (mA) 2010-07-30 TCR4S12DWBG~TCR4S36DWBG TCR4S30DWBG 3.1 VIN = 4 V, Output voltage VOUT (V) CIN = 0.1 μF, COUT = 1 μF 3.0 2.9 0 20 40 60 80 100 120 140 160 180 200 Output current IOUT (mA) 3) Output Voltage vs. Ambient temperature TCR4S15DWBG TCR4S18DWBG 1.52 1.82 (V) VIN = 2.8 V, CIN = 0.1 μF, COUT = 1 μF VOUT 1.51 Output voltage Output voltage VOUT (V) VIN = 2.5 V, 1.5 IOUT = 50 mA 1.49 1.48 −50 −25 0 25 50 Ambient temperature Ta 75 1.8 (°C) IOUT = 50 mA 1.79 1.78 −50 100 CIN = 0.1 μF, COUT = 1 μF 1.81 −25 0 25 Ambient temperature 50 Ta 75 100 (°C) TCR4S30DWBG 3.04 Output voltage VOUT (V) VIN = 4 V, CIN = 0.1 μF, COUT = 1 μF 3.02 3.0 IOUT = 50 mA 2.98 2.96 −50 −25 0 25 Ambient temperature 50 Ta 75 100 (°C) 8 2010-07-30 TCR4S12DWBG~TCR4S36DWBG 4) Dropout Voltage vs. Output Current TCR4S30DWBG Dropout voltage VIN - VOUT (mV) 500 CIN = 0.1 μF, COUT = 1 μF, 400 Ta = 85°C 25°C 300 -40°C 200 100 0 0 20 40 60 80 100 120 140 160 180 Output current IOUT 200 (mA) 5) Quiescent Current vs. Input Voltage TCR4S15DWBG TCR4S18DWBG 240 240 (μA) CIN = 0.1 μF, COUT = 1 μF IOUT = 150 mA Quiescent current IB Quiescent current IB (μA) CIN = 0.1 μF, COUT = 1 μF 200 160 120 50 mA 80 0 mA 200 160 IOUT = 150 mA 120 80 50 mA 40 40 0 0 0 mA 0 1 2 3 Input voltage 5 4 VIN 6 (V) 0 1 2 3 Input voltage VIN 4 5 6 (V) TCR4S30DWBG 250 200 Quiescent current IB (μA) CIN = 0.1 μF, COUT = 1 μF 150 IOUT = 150 mA 100 50 mA 50 0 mA 0 0 1 2 3 Input voltage 5 4 VIN 6 (V) 9 2010-07-30 TCR4S12DWBG~TCR4S36DWBG 6) Quiescent current vs. Ambient temperature TCR4S15DWBG TCR4S18DWBG 200 200 COUT = 1μF, COUT = 1μF, 100 Quiescent current IB IB Quiescent current VIN = 2.8 V, CIN = 0.1 μF, (μA) (μA) VIN = 2.5 V, CIN = 0.1 μF, IOUT = 150 mA 50 mA IOUT = 150 mA 100 50 mA 0 mA 0 −50 0 mA −25 0 25 50 75 0 −50 100 Ambient temperature Ta (°C) −25 0 25 50 75 100 Ambient temperature Ta (°C) TCR4S30DWBG 200 (μA) VIN = 4 V, CIN = 0.1 μF, Quiescent current IB COUT = 1μF, IOUT = 150 mA 100 50 mA 0 mA 0 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) 7) Overcurrent Protection Characteristics TCR4S15DWBG TCR4S18DWBG 2.5 2.5 (V) Pulse width = 1 ms VOUT 2.0 VIN = 4.5 V 1.5 Output voltage Output voltage VOUT (V) Pulse width = 1 ms VIN = 2.5 V 1.0 VIN = 6.0 V 0.5 0 0 100 200 300 Output current 400 IOUT 500 2.0 VIN = 3.8 V 1.5 VIN = 2.8 V 1.0 0.5 0 0 600 (mA) VIN = 6.0 V 100 200 300 Output current 10 500 400 IOUT 600 (mA) 2010-07-30 TCR4S12DWBG~TCR4S36DWBG TCR4S30DWBG 5.0 Output voltage VOUT (V) Pulse width = 1 ms 4.0 3.0 VIN = 6.0 V 2.0 VIN = 4.0 V 1.0 0 0 100 200 300 Output current IOUT 500 600 (mA) Ripple rejection Raito vs. Frequency TCR4S30DWBG 90 (dB) 80 Ripple Rejection Raito 8) 400 70 60 50 40 30 20 VIN = 4.0 V ,Vripple = 500 mVp−p 10 CIN = none, COUT = 1μF IOUT = 10 mA, Ta = 25°C 0 10 100 1k Frequency f 10 k 100 k 300 k (Hz) 11 2010-07-30 TCR4S12DWBG~TCR4S36DWBG 9) Control Transient Response (Auto-Discharge) TCR4S18DWBG (Turn on waveform) Control voltage VCT (ON) (1V/div) Control voltage VCT (OFF) (1V/div) Output voltage VOUT (ON) (1V/div) Output voltage VOUT (OFF) (1V/div) TCR4S18DWBG (Turn off waveform) VIN = 4 V, CIN = 0.1 μF, COUT = 1 μF IOUT = 50 mA Time t ( 100 μs/div ) VIN = 4 V, CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA IOUT = 50 mA Time t ( 100 μs/div ) 10) Load Transient Response TCR4S15DWBG (IOUT = 30m to 1mA) Output voltage VIN = 2.5 V, CIN = 0.1 μF, COUT = 1 μF Time t ( 5 μs/div ) Time t ( 20 μs/div ) TCR4S15DWBG (IOUT = 50m to 100mA) TCR4S15DWBG (IOUT = 100m to 50mA) Output current IOUT (50mA/div) Output voltage Output voltage ∆ VOUT (50mV/div) ∆ VOUT (50mV/div) CIN = 0.1 μF, COUT = 1 μF VIN = 2.5 V, CIN = 0.1 μF, COUT = 1 μF Time t ( 5 μs/div ) ∆ VOUT (50mV/div) Output voltage VIN = 2.5 V, Output current IOUT (50mA/div) ∆ VOUT (50mV/div) Output current IOUT (20mA/div) Output current IOUT (20mA/div) TCR4S15DWBG (IOUT = 1m to 30mA) VIN = 2.5 V, CIN = 0.1 μF, COUT = 1 μF Time t ( 20 μs/div ) 12 2010-07-30 TCR4S12DWBG~TCR4S36DWBG TCR4S30DWBG (IOUT = 1m to 30mA) Output current IOUT (20mA/div) Output voltage VIN = 4 V, CIN = 0.1 μF, COUT = 1 μF ∆ VOUT (50mV/div) Output voltage ∆ VOUT (50mV/div) Output current IOUT (20mA/div) TCR4S30DWBG (IOUT =30m to 1mA) Time t ( 5 μs/div ) TCR4S30DWBG (IOUT = 100m to 50mA) Output voltage VIN = 4 V, CIN = 0.1 μF, COUT = 1 μF Time t ( 5 μs/div ) ∆ VOUT (50mV/div) Output current IOUT (50mA/div) O t t t Output current IOUT (50mA/div) Output voltage CIN = 0.1 μF, COUT = 1 μF Time t ( 20 μs/div ) TCR4S30DWBG (IOUT = 50m to 100mA) ∆ VOUT (50mV/div) VIN = 4 V, VIN = 4 V, CIN = 0.1 μF, COUT = 1 μF Time t ( 20 μs/div ) 13 2010-07-30 TCR4S12DWBG~TCR4S36DWBG Package Dimensions Unit: mm Weight: 0.7 mg (typ) 14 2010-07-30 TCR4S12DWBG~TCR4S36DWBG RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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