TCST110. up to TCST230. Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. B) Applications A) D Contactless optoelectronic switch, control and counter 15136 Features D Compact construction D No setting efforts D Polycarbonate case protected against 95 10796 + D E + ambient light D 2 case variations D 3 different apertures D CTR selected in groups 7.6 0.3” (regarding fourth number of type designation) Top view Order Instruction Ordering Code TCST1103A) TCST2103B) TCST1202A) TCST2202B) TCST1300A) TCST2300B) Document Number 83764 Rev. A5, 08–Jun–99 Resolution (mm) / Aperture (mm) 0.6 / 1.0 0.4 / 0.5 0.2 / 0.25 Remarks No mounting flags With two mounting flags No mounting flags With two mounting flags No mounting flags With two mounting flags www.vishay.com 1 (9) TCST110. up to TCST230. Vishay Telefunken Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 6 60 3 100 100 Unit V mA A mW °C Symbol VCEO VECO IC ICM PV Tj Value 70 7 100 200 150 100 Unit V V mA mA mW °C Symbol Ptot Tamb Tstg Tsd Value 250 –55 to +85 –55 to +100 260 Unit mW °C °C °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Total power dissipation Operating temperature range Storage temperature range Soldering temperature www.vishay.com 2 (9) Test Conditions Tamb ≤ 25°C 2 mm from case, t ≤ 5 s Document Number 83764 Rev. A5, 08–Jun–99 TCST110. up to TCST230. Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 60 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Test Conditions IC = 1 mA IE = 10 mA VCE = 25 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. Unit V V nA Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current 100 Coupler Parameter Current transfer ratio Collector current Collector emitter saturation voltage Resolution, path of the shutter crossing the radiant sensitive zone Document Number 83764 Rev. A5, 08–Jun–99 Test Conditions VCE = 5 V, IF = 20 mA VCE = 5 V, IF = 20 mA IF = 20 mA, IC = 1 mA IF = 20 mA, IC = 0.5 mA IF = 20 mA, IC = 0.1 mA ICrel = 10 to 90% Type Symbol TCST1103, CTR TCST2103 TCST1202, CTR TCST2202 TCST1300, CTR TCST2300 TCST1103, IC TCST2103 TCST1202, IC TCST2202 TCST1300, IC TCST2300 TCST1103, VCEsat TCST2103 TCST1202, VCEsat TCST2202 TCST1300, VCEsat TCST2300 TCST1103, s TCST2103 TCST1202, s TCST2202 TCST1300, s TCST2300 Min. 10 Typ. 20 Max. Unit % 5 10 % 1.25 2.5 % 2 4 mA 1 2 mA 0.25 0.5 mA 0.4 V 0.4 V 0.4 V 0.6 mm 0.4 mm 0.2 mm www.vishay.com 3 (9) TCST110. up to TCST230. Vishay Telefunken Switching Characteristics Parameter Turn-on time Turn-off time IF 0 Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W (see figure 1) Symbol ton toff Typ. 10.0 8.0 +5V IF 96 11698 IC = 2 mA; adjusted through input amplitude RG = 50 W tp = 0.01 T tp = 50 ms Unit ms ms IF 0 t tp IC 100% 90% Channel I Channel II 50 W 100 W y x 20 pF Oscilloscope RL 1 MW CL 10% 0 95 10897 t tr Figure 1. Test circuit, saturated operation ts td ton tp td tr ton (= td + tr) tf toff pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time Figure 2. Switching times www.vishay.com 4 (9) Document Number 83764 Rev. A5, 08–Jun–99 TCST110. up to TCST230. Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10000 ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 400 300 Coupled device 200 Phototransistor IR-diode 100 VCE=25V IF=0 1000 100 10 0 1 0 30 60 90 120 150 Tamb – Ambient Temperature ( °C ) 95 11088 0 95 11090 Figure 3. Total Power Dissipation vs. Ambient Temperature 25 50 100 75 Tamb – Ambient Temperature ( °C ) Figure 6. Collector Dark Current vs. Ambient Temperature 1000.0 10.000 IC – Collector Current ( mA ) I F – Forward Current ( mA ) VCE=5V 100.0 10.0 1.0 0.1 0 VF – Forward Voltage ( V ) 10.00 VCE=5V IF=20mA IC – Collector Current ( mA ) CTR rel – Relative Current Transfer Ratio 1.0 1.5 1.0 0.5 0 25 50 75 100 Tamb – Ambient Temperature ( °C ) Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature Document Number 83764 Rev. A5, 08–Jun–99 10.0 100.0 IF – Forward Current ( mA ) Figure 7. Collector Current vs. Forward Current 2.0 95 11089 0.010 96 12066 Figure 4. Forward Current vs. Forward Voltage 0 –25 0.100 0.001 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 1.000 IF=50mA 20mA 10mA 1.00 5mA 2mA 0.10 1mA 0.01 0.1 96 12067 1.0 10.0 100.0 VCE – Collector Emitter Voltage ( V ) Figure 8. Collector Current vs. Collector Emitter Voltage www.vishay.com 5 (9) TCST110. up to TCST230. Vishay Telefunken 110 10.0 1.0 0.1 0.1 1.0 10.0 A=1mm 80 70 s 60 50 40 30 20 10 0 –0.5 –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5 s – Displacement ( mm ) 96 12005 Figure 9. Current Transfer Ratio vs. Forward Current Figure 11. Relative Collector Current vs. Displacement 110 20 100 Non Saturated Operation VS=5V RL=100W 15 I Crel – Relative Collector Current t on / t off – Turn on / Turn off Time ( m s ) 90 100.0 IF – Forward Current ( mA ) 96 12068 0 100 VCE=5V I Crel – Relative Collector Current CTR – Current Transfer Ratio ( % ) 100.0 10 ton 5 toff 95 11086 2 4 6 8 80 Figure 10. Turn on / off Time vs. Collector Current s 70 60 50 40 30 20 10 0 –0.5 –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5 10 IC – Collector Current ( mA ) A=0.5mm 90 0 0 0 s – Displacement ( mm ) 96 12006 Figure 12. Relative Collector Current vs. Displacement 110 I Crel – Relative Collector Current 100 0 A=0.25mm 90 80 70 s 60 50 40 30 20 10 0 –0.5 –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5 96 12007 s – Displacement ( mm ) Figure 13. Relative Collector Current vs. Displacement www.vishay.com 6 (9) Document Number 83764 Rev. A5, 08–Jun–99 TCST110. up to TCST230. Vishay Telefunken Dimensions of TCST1.0. in mm 96 12094 Document Number 83764 Rev. A5, 08–Jun–99 www.vishay.com 7 (9) TCST110. up to TCST230. Vishay Telefunken Dimensions of TCST2.0. in mm 96 12095 www.vishay.com 8 (9) Document Number 83764 Rev. A5, 08–Jun–99 TCST110. up to TCST230. Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 83764 Rev. A5, 08–Jun–99 www.vishay.com 9 (9)