TE13004D • TE13005D Silicon NPN High Voltage Switching Transistor Features D D D D D D D D Monolithic integrated C-E-free-wheel diode HIGH SPEED technology Planar passivation Very short switching times Very low switching losses Very low dynamic saturation Very low operating temperature High reverse voltage 14283 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Test Conditions Type TE13004D TE13005D TE13004D TE13005D Tcase ≤ 25°C Symbol VCEO VCEO VCES VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 300 400 600 700 9 6 8 2 4 57 150 –65 to +150 Unit V V V V V A A A A W °C °C Symbol RthJC Value 2.2 Unit K/W Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 Test Conditions 1 (9) TE13004D • TE13005D Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Transistor Collector cut-off current Collector-emitter breakdown voltage (figure 1) Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC forward current transfer ratio Dynamic y saturation voltage Gain bandwidth product Free-wheel diode Forward voltage Turn-on transient peak voltage Reverse recovery current 2 (9) Test Conditions VCE = 600 V VCE = 700 V VCE = 600 V; Tcase = 150°C VCE = 700 V; Tcase = 150°C IC = 100 mA; L = 125 mH; Imeasure = 100 mA IE = 1 mA Type Symbol Min Typ Max Unit 50 50 0.5 0.5 mA mA TE13004D ICES TE13005D ICES TE13004D ICES TE13005D ICES TE13004D V(BR)CEO 300 mA mA V TE13005D V(BR)CEO 400 V 9 V V(BR)EBO IC = 2 A; IB = 0.4 A VCEsat 0.5 V IC = 2 A; IB = 0.4 A VBEsat 1.6 V VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 1 A VCE = 2 V; IC = 4 A IC = 2 A; IB = 0.2 A; t = 1 ms IC = 2 A; IB = 0.2 A; t = 3 ms VCE = 10 V; IC = 500 mA; f = 1 MHz hFE hFE hFE VCEsatdyn VCEsatdyn fT 10 10 4 2.5 0.6 V V MHz 4 IF = 2 A IF = 2 A; diF/dt = 10 A/ms VF VFP 1.2 4 IF = 2 A; diF/dt = 5 A/ms; VS = 200 V IRM 4 1.5 5 V V A TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 TE13004D • TE13005D Switching Characteristics Tcase = 25°C, unless otherwise specified Parameter Test Conditions Resistive load (figure 3) Turn on time IC = 2 A;; IB1 = –IB2 = 0.4 A;; VS = 125 V Storage time Fall time Inductive load (figure 4) Storage time IC = 2 A; IB1 = 0.4 A; L = 200 mH; Vclamp = 300 V; l Cross over time –VBE = 5 V; Tcase = 100°C Free-wheel diode Reverse recovery time IF = 0.5 A; IR = 1 A; iR = 0.25 A Forward recovery time IF = 2 A; diF/dt = 10 A/ms Reverse recovery IF = 2 A;; –diF/dt = 5 A/ms y time Type Symbol Typ Max Unit ton ts tf 0.25 1.5 0.15 0.4 2.5 0.3 ms ms ms ts 1.2 2 ms tc 0.4 0.7 ms trr tfr trr 0.7 0.4 1.1 0.9 1 ms ms ms ms tIRM Min 95 9666 VF VFP 110% 100% t tfr Figure 1. Turn on transient peak voltage TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 3 (9) TE13004D • TE13005D 94 8863 V S2 IC + 10 V IB w Imeasure IC 5 IC LC + V S1 + 0 to 30 V VCE V(BR)CEO 3 Pulses tp T tp I(BR)R + 0.1 + 10 ms V(BR)CEO 100 mW Figure 2. Test circuit for V(BR)CE0 94 8852 IB IB1 0 t IC –IB2 RC (1) VCE IB1 IB VCC IC 0.9 IC RB VBB + 0.1 IC (1) Fast electronic switch t tr td ton ts toff tf Figure 3. Test circuit for switching characteristics – resistive load 4 (9) TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 TE13004D • TE13005D 94 8853 IB IB1 0 LC t –IB2 IC (2) (1) IB1 IB IC VCE Vclamp VCC 0.9 IC RB VBB + 0.1 IC t (1) Fast electronic switch (2) Fast recovery rectifier ts tr Figure 4. Test circuit for switching characteristics – inductive load TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 5 (9) TE13004D • TE13005D Typical Characteristics (Tcase = 25_C unless otherwise specified) 100 2.2 K/W 12.5 K/W 10 1 25 K/W 0.1 50 K/W RthJA = 85 K/W 0.01 TE13004D IC – Collector Current ( A ) P tot – Total Power Dissipation ( W ) 100 10 tp=10ms 50ms 100ms 1 500ms 0.1 v 0 25 50 75 125 100 150 Tcase ( °C ) 1 10 - Base Emitter Saturation Voltage (V) 1A T = 25°C 0.01 case 0.01 0.1 BEsat IC = 0.5A 4A V - Collector Emitter Saturation Voltage (V) CEsat V 2A 1 10 IB - Base Current (A) 95 9789 10 Tcase = 25°C IC = 8A 1 2A 0.5A 0.1 0.01 0.1 1 10 IB - Base Current (A) 95 9788 Figure 9. VBEsat vs. IB 100 - Forward DC Current Transfer Ratio 25 Tcase = 25°C 10V 10 5V VCE = 2V h 1 0.01 Tcase = 25°C 20 0.5A 15 1A 2A 10 IC = 4A 5 FE FE - Forward DC Current Transfer Ratio 4A 1A Figure 6. VCEsat vs. IB h 10000 1000 Figure 8. IC vs. VCE 10 1 100 VCE – Collector Emitter Voltage ( V ) 95 10965 Figure 5. Ptot vs.Tcase 0.1 1 IC - Collector Current (A) Figure 7. hFE vs. IC 6 (9) DC 0.01 95 10602 95 9785 1ms 5ms tp/T 0.01 Tcase = 25°C 0.001 0.1 TE13005D 10 0 0 95 9786 2 4 6 8 10 VCE - Collector Emitter Voltage (V) Figure 10. hFE vs. VCE TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 TE13004D • TE13005D 10 t s ,t f – Switching Times ( m s ) t s ,t f – Switching Times ( m s ) 10 R–load ts 1 tf 0.1 hFE = 5 IB1 = –IB2 Tcase = 25°C 0.01 0 1 2 3 1 tf 0.1 IC = 2A IB1 = 0.4A Tcase = 25°C 0.01 5 4 IC – Collector Current ( A ) 95 9908 R–load ts 0 3 4 5 –IB2/IB1 Figure 14. ts, tf vs. –IB2/IB1 10 t s ,t f – Switching Times ( m s ) 10 t s ,t f – Switching Times ( m s ) 2 95 9909 Figure 11. ts, tf vs. IC L–load ts 1 tf 0.1 hFE = 5 IB1 = –IB2 Tcase = 25°C 0.01 1 2 3 4 1 tf 0.1 5 IC – Collector Current ( A ) 95 9910 L–load ts IC = 2A IB1 = 0.4A Tcase = 25°C 0.01 0 0 95 9911 1 2 3 4 5 –IB2/IB1 Figure 15. Error during Connect – 6107 Figure 12. ts, tf vs. IC Z thp – Thermal Resistance for Pulse Cond. ( K/W ) 1 10 DC 1 tp/T = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.01 95 10962 0.1 1 10 100 tp – Pulse Length ( ms ) Figure 13. TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 7 (9) TE13004D • TE13005D Dimensions in mm 14277 8 (9) TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 TE13004D • TE13005D Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 9 (9)