Advance Product Information October 29, 2004 Ku Band 2W Packaged Amplifier TGA8658-EPU-SG Key Features • • • • • • • • • Frequency Range: 13-17 GHz Optimized for VSAT band (13.75-14.5GHz) 33 dB Nominal Gain Typical > 33.5 dBm Psat in VSAT band @ 7V Bias 5-8 V @ 680 mA (Quiescent) 0.5 µm 3MI pHEMT Technology Integrated power detector 6 lead package Package Dimensions: 6.4 x 6.4 x 3.0 mm (0.3 x 0.3 x 0.1 in ) Package Dimensions 6.4 x 6.4 x 3.0 mm Primary Applications • • Fixtured Measured Performance VSAT Point-to-Point Bias Conditions: Vd = 7 V, Idq =680 mA 30 40 35 Gain (dB) Gain 10 25 20 0 15 -10 10 Return Loss (dB) 20 30 -20 5 Output Input 0 -30 12 13 14 15 16 17 18 19 Frequency (GHz) 36 1400 1200 32 1000 Gain 30 800 28 26 600 IDS 24 IDS (mA) Data taken @ 14.5 GHz Pout (dBm) & Gain (dB) 34 400 Pout 22 200 20 18 0 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 Pin (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information October 29, 2004 TGA8658-EPU-SG TABLE I MAXIMUM RATINGS 1/ Symbol Parameter Vd Drain Supply Voltage Vg Gate Supply Voltage Range Idq Drain Supply Current (Quiescent) | Ig | Gate Current PIN Input Continuous Wave Power PD Power Dissipation TCH TM TSTG Value Notes 8V 2/ -5V to 0V 1.3 A 2/ 18 mA 21 dBm 5 W + (85°C- TB)/13 2/ 2/ 3/ Operating Channel Temperature 150 °C 4/ 5/ Mounting Temperature (30 Seconds) 320 °C -65 to 150 °C Storage Temperature 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ TB = Package backside temperature in degrees C. 4/ These ratings apply to each individual FET. 5/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II RF CHARACTERIZATION TABLE (TA = 25qC, Nominal) (Vd = 7 V, Idq = 680 mA) SYMBOL PARAMETER TEST CONDITION TYPICAL UNITS Gain Small Signal Gain F = 13 –17 GHz 33 dB IRL Input Return Loss F = 13 –17 GHz 10 dB ORL Output Return Loss F = 13 –17 GHz 10 dB PWR Output Power @ Pin = +5 dBm F = 13 –15 GHz 34 dBm Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information October 29, 2004 TGA8658-EPU-SG Measured Fixtured Data Bias Conditions: Vd = 7 V, Idq = 680 mA 30 40 35 Gain (dB) 30 Gain 10 25 20 0 15 -10 10 Return Loss (dB) 20 -20 5 Output Input 0 -30 12 13 14 15 16 17 18 19 Frequency (GHz) , 36 Pout (dBm) 34 32 30 13.5 GHz 28 14GHz 14.5 15GHz 26 15.5GHz 24 -10 -8 -6 -4 -2 0 2 4 6 8 10 Pin (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information October 29, 2004 TGA8658-EPU-SG Measured Fixtured Data Bias Conditions: Vd = 7 V, Idq = 680 mA 1320 1220 Ids (mA) 1120 1020 920 13.5 GHz 14GHz 14.5 15GHz 15.5GHz 820 720 620 -8 -6 -4 -2 0 2 4 6 8 10 Pin (dBm) 36 Power Gain (dB) 34 32 30 28 13.5 GHz 14GHz 14.5 15GHz 15.5GHz 26 24 22 20 -8 -6 -4 -2 0 2 4 6 8 10 Pin (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information October 29, 2004 TGA8658-EPU-SG Measured Fixtured Data Bias Conditions: Vd = 7 V, Idq = 680 mA 20 IMD3 Level (dBm) 10 0 -10 13.5GHz 14GHz 14.5GHz 15GHz -20 -30 -40 -50 10 12 14 16 18 20 22 24 26 28 30 32 Output Power Per Tone (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Advance Product Information October 29, 2004 TGA8658-EPU-SG Packaged Dimensional Drawing TGA8658 - SG Dimensions in inches Top View Vd Vref 0.012 typ RF In RF out 0.160 typ Vg Vdet 0.250 sq 0.060, 6 pl 0.010 Side View 0.020 ref (2) R=0.010 2 pl 0.006 0.030 0.060 typ Bias Procedure 1. 2. 3. 4. 5. Make sure no RF power is applied to the device before continuing. Pinch off device by setting VG to –1.5V. Raise Vd to 7.0V while monitoring drain current. Raise Vg until drain current reaches 680 mA. Apply RF power. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Advance Product Information October 29, 2004 TGA8658-EPU-SG Power Detector +5V 40K: 40K: External Vref Vdet TGA8658 5pF 50: RF out DUT TGA8658 Power Detector @ 14GHz 0.6 Vref-Vdet (V) 0.5 0.4 0.3 0.2 0.1 0 0 10 (20 dBm) 20 (26 dBm) 30 40 50 (29.5 dBm) (32 dBm) (34 dBm) 60 sqrt Pout (mW^0.5) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 Advance Product Information October 29, 2004 TGA8658-EPU-SG Assembly of a TGA8658-EPU-SG Surface Mount Package onto a Motherboard Manual Assembly for Prototypes 1. Clean the motherboard or the similar module with Acetone. Rinse with alcohol and DI water. Allow the circuit to fully dry. 2. To improve the thermal and RF performance, we recommend a heat sink attach to the bottom of the package and apply indium alloy SN63 solder or Tin Lead solder to the bottom of TGA8658. 3. Apply Tin Lead solder to each pin of TGA8658. 4 Clean the assembly with alcohol. High Volume Assembly of the Package The TGA8658EPU is a custom leaded packaged component. High volume assembly can be performed using standard assembly processes including solder printing such as stencil solder printing. Pick-and-place using a standard machine such as a MRSI machine, and solder reflow using a “Sikama Reflow System” using typical zone temperatures: 120, 175, 195, and 215 degrees Celsius at 15 second intervals. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8