TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) TIP141, TIP142, TIP146, and TIP147 are Preferred Devices Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − • • • Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V Collector−Emitter Sustaining Voltage − @ 30 mA VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145 = 80 Vdc (Min) − TIP141, TIP146 = 100 Vdc (Min) − TIP142, TIP147 Monolithic Construction with Built−In Base−Emitter Shunt Resistor Pb−Free Packages are Available* http://onsemi.com 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−100 VOLTS, 125 WATTS SOT−93 (TO−218) CASE 340D STYLE 1 MAXIMUM RATINGS Rating Symbol TIP140 TIP145 TIP141 TIP146 TIP142 TIP147 Unit Collector − Emitter Voltage VCEO 60 80 100 Vdc Collector − Base Voltage VCB 60 80 100 Vdc Emitter − Base Voltage VEB 5.0 Vdc Collector Current − Continuous − Peak (Note 1) IC Base Current − Continuous IB 0.5 Adc Total Power Dissipation @ TC = 25_C PD 125 W TJ, Tstg −65 to +150 _C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.0 °C/W Thermal Resistance, Junction−to−Ambient RqJA 35.7 °C/W Operating and Storage Junction Temperature Range MARKING DIAGRAM Adc 10 15 AYWWG TIP14x THERMAL CHARACTERISTICS Characteristic Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. 5 ms, v 10% Duty Cycle. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 5 1 A Y WW TIP14x x G = Assembly Location = Year = Work Week = Device Code = 0, 1, 2, 5, 6, or 7 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: TIP140/D TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) DARLINGTON SCHEMATICS NPN TIP140 TIP141 TIP142 PNP TIP145 TIP146 TIP147 COLLECTOR BASE COLLECTOR BASE ≈ 8.0 k ≈ 40 ≈ 8.0 k EMITTER ≈ 40 EMITTER ORDERING INFORMATION Device Package Shipping TIP140 SOT−93 (TO−218) 30 Units / Rail TIP140G SOT−93 (TO−218) (Pb−Free) 30 Units / Rail TIP141 SOT−93 (TO−218) 30 Units / Rail TIP141G SOT−93 (TO−218) (Pb−Free) 30 Units / Rail TIP142 SOT−93 (TO−218) 30 Units / Rail TIP142G SOT−93 (TO−218) (Pb−Free) 30 Units / Rail TIP145 SOT−93 (TO−218) 30 Units / Rail TIP145G SOT−93 (TO−218) (Pb−Free) 30 Units / Rail TIP146 SOT−93 (TO−218) 30 Units / Rail TIP146G SOT−93 (TO−218) (Pb−Free) 30 Units / Rail TIP147 SOT−93 (TO−218) 30 Units / Rail TIP147G SOT−93 (TO−218) (Pb−Free) 30 Units / Rail http://onsemi.com 2 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max 60 80 100 − − − − − − − − − − − − 2.0 2.0 2.0 − − − − − − 1.0 1.0 1.0 − − 20 1000 500 − − − − − − − − 2.0 3.0 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 30 mA, IB = 0) VCEO(sus) TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 Collector Cutoff Current (VCB = 60 V, IE = 0) (VCB = 80 V, IE = 0) (VCB = 100 V, IE = 0) TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 Vdc ICEO mA ICBO Emitter Cutoff Current (VBE = 5.0 V) mA IEBO mA ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 5.0 A, VCE = 4.0 V) (IC = 10 A, VCE = 4.0 V) hFE − Collector−Emitter Saturation Voltage (IC = 5.0 A, IB = 10 mA) (IC = 10 A, IB = 40 mA) VCE(sat) Vdc Base−Emitter Saturation Voltage (IC = 10 A, IB = 40 mA) VBE(sat) − − 3.5 Vdc Base−Emitter On Voltage (IC = 10 A, VCE = 4.0 Vdc) VBE(on) − − 3.0 Vdc td − 0.15 − ms tr − 0.55 − ms ts − 2.5 − ms tf − 2.5 − ms SWITCHING CHARACTERISTICS Resistive Load (See Figure 1) Delay Time Rise Time Storage Time (VCC = 30 V, IC = 5.0 A, IB = 20 mA, Duty Cycle v 2.0%, IB1 = IB2, RC & RB Varied, TJ = 25_C) Fall Time 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. 10 VCC RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS −30 V D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA RC SCOPE MSD6100 USED BELOW IB ≈ 100 mA ts t, TIME (s) μ TUT V2 approx +12 V RB 51 0 V1 appox. −8.0 V D1 ≈ 8.0 k PNP NPN 5.0 ≈ 40 2.0 tf 1.0 tr 0.5 +4.0 V 25 ms tr, tf ≤ 10 ns DUTY CYCLE = 1.0% td @ VBE(off) = 0 0.2 for td and tr, D1 is disconnected and V2 = 0 0.1 0.2 For NPN test circuit reverse diode and voltage polarities. Figure 1. Switching Times Test Circuit 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Times http://onsemi.com 3 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 10 20 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) TYPICAL CHARACTERISTICS NPN TIP140, TIP141, TIP142 PNP TIP145, TIP146, TIP147 20,000 TJ = 150°C TJ = 150°C 100°C hFE , DC CURRENT GAIN 25°C 2000 −55 °C 1000 500 7000 25°C 5000 −55 °C 3000 2000 VCE = 4.0 V 300 0.5 VCE(SAT), COLLECTOR−EMITTER SATURATION VOLTAGE (VOLTS) 100°C 10,000 VCE = 4.0 V 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS) 7.0 1000 0.5 10 0.7 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS) 7.0 10 Figure 3. DC Current Gain versus Collector Current VCE(SAT), COLLECTOR−EMITTER SATURATION VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 5000 5.0 3.0 2.0 IC = 10 A, IB = 4.0 mA IC = 5.0 A, IB = 10 mA 1.0 IC = 1.0 A, IB = 2.0 mA 0.7 0.5 −75 −50 −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) 5.0 3.0 2.0 IC = 10 A, IB = 4.0 mA IC = 5.0 A, IB = 10 mA 1.0 IC = 1.0 A, IB = 2.0 mA 0.7 0.5 −75 −50 −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) 4.0 3.6 VBE, BASE−EMITTER VOLTAGE (VOLTS) VBE, BASE−EMITTER VOLTAGE (VOLTS) Figure 4. Collector−Emitter Saturation Voltage VCE = 4.0 V 3.2 2.8 2.4 IC = 10 A 2.0 1.6 5.0 A 1.2 0.8 −75 1.0 A −25 25 75 125 4.0 3.6 3.2 2.8 2.4 IC = 10 A 2.0 1.6 5.0 A 1.2 0.8 −75 175 VCE = 4.0 V 1.0 A −25 TJ, JUNCTION TEMPERATURE (°C) 25 75 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Base−Emitter Voltage http://onsemi.com 4 125 175 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) ACTIVE−REGION SAFE OPERATING AREA There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on T J(pk) = 150_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) (mA) 20 10 7.0 5.0 3.0 2.0 dc TJ = 150°C SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITATION @ TC = 25°C 1.0 TIP140, 145 TIP141, 146 TIP142, 147 15 20 70 30 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.2 10 15 10 7.0 5.0 100 mJ 2.0 1.0 100 0.5 1.0 2.0 5.0 10 20 L, UNCLAMPED INDUCTIVE LOAD (mH) Figure 6. Active−Region Safe Operating Area Figure 7. Unclamped Inductive Load VCE MONITOR INPUT VOLTAGE COLLECTOR CURRENT MPS−U52 100 mH RBB1 INPUT 50 TUT 1.5k 50 VCC = 20 V IC MONITOR RBB2 = 100 VBB2 = 0 VBB1 = 10 V 50 RS = 0.1 w ≈ 7.0 ms (SEE NOTE 1) 5.0 V 0 100 ms 0 1.42 A VCE(sat) −20 V COLLECTOR VOLTAGE V(BR)CER TEST CIRCUIT NOTE 1: Input pulse width is increased until ICM = 1.42 A. NOTE 2: For NPN test circuit reverse polarities. VOLTAGE AND CURRENT WAVEFORMS Figure 8. Inductive Load http://onsemi.com 5 100 hfe , SMALL−SIGNAL FORWARD CURRENT TRANSFER RATIO TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) 100 70 50 VCE = 10 V IC = 1.0 A TJ = 25°C PNP PNP NPN 20 10 7.0 5.0 NPN 2.0 1.0 1.0 2.0 3.0 5.0 f, FREQUENCY (MHz) 7.0 10 Figure 9. Magnitude of Common Emitter Small−Signal Short−Circuit Forward Current Transfer Ratio PD, POWER DISSIPATION (WATTS) 5.0 4.0 3.0 2.0 1.0 0 0 40 80 120 160 TA, FREE−AIR TEMPERATURE (°C) 200 Figure 10. Free−Air Temperature Power Derating http://onsemi.com 6 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) PACKAGE DIMENSIONS SOT−93 (TO−218) CASE 340D−02 ISSUE E C Q B U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E DIM A B C D E G H J K L Q S U V 4 A L 1 K 2 3 D J H MILLIMETERS MIN MAX −−− 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF −−− 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. V G INCHES MIN MAX −−− 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF −−− 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 7 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. TIP140/D