TOSHIBA TLP781F

TLP781/TLP781F
TOSHIBA Photocoupler
GaAs IRED & Photo−Transistor
TLP781, TLP781F
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage
Circuits
TLP781
Unit in mm
The TOSHIBA TLP781 consists of a silicone photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a
four lead plastic DIP (DIP4) with having high isolation voltage
(AC: 5kVRMS (min)).
TOSHIBA
•
TLP781 : 7.62mm pitch type DIP4
•
TLP781F : 10.16mm pitch type DIP4
•
Collector-emitter voltage: 80V (min.)
•
Current transfer ratio: 50% (min.)
•
Isolation voltage: 5000Vrms (min.)
•
UL recognized: UL1577, file No. E67349
•
BSI approved: BS EN60065:2002
Weight: 0.25g (typ.)
Unit in mm
TLP781F
Rank GB: 100% (min.)
Approved no.8961
BS EN60950-1:2006
Approved no.8962
•
SEMKO approval: EN60950-1,EN60065 under plan
•
Option(D4)type
VDE approved : DIN EN60747-5-2
Certificate No. 40021173
(Note): When an EN60747-5-2 approved type is needed,
Please designate “Option (D4)”
TOSHIBA
Weight: 0.25g (typ.)
•
Construction mechanical rating
7.62mm Pitch
Standard Type
10.16mm Pitch
TLPxxxF Type
Creepage distance
6.5mm(min)
8.0mm(min)
Clearance
6.5mm(min)
8.0mm(min)
Insulation thickness
0.4mm(min)
0.4mm(min)
Pin Configurations
(top view)
1
4
2
3
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
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2007-12-05
TLP781/TLP781F
Current Transfer Ratio
Type
TLP781
Classi−
fication
(Note 1)
Current Transfer Ratio (%)
(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Min
Max
Marking Of Classification
(None)
50
600
Blank, Y, Y+, YE,G, G+, B, B+,BL,GB
Rank Y
50
150
YE
Rank GR
100
300
GR
Rank BL
200
600
BL
Rank GB
100
600
GB
Rank YH
75
150
Y+
Rank GRL
100
200
G
Rank GRH
150
300
G+
Rank BLL
200
400
B
(Note 1): Ex. rank GB: TLP781 (GB)
(Note 2): Application type name for certification test, please use standard product type name, i. e.
TLP781 (GB): TLP781
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
IF
60
mA
ΔIF / °C
−0.7
mA / °C
IFP
1
A
PD
100
mW
ΔPD / °C
−1.0
mW / °C
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Collector−emitter voltage
VCEO
80
V
Emitter−collector voltage
VECO
7
V
Collector current
IC
50
mA
Power dissipation(single circuit)
PC
150
mW
ΔPC / °C
−1.5
mW / °C
Tj
125
°C
Operating temperature range
Topr
−55~110
°C
Storage temperature range
Tstg
−55~125
°C
Lead soldering temperature (10s)
Tsol
260
°C
Total package power dissipation
PT
250
mW
ΔPT / °C
−2.5
mW / °C
BVS
5000
Vrms
Forward current
Forward current derating(Ta ≥ 39°C)
LED
Pulse forward current
(Note 3)
Power dissipation
Detector
Power dissipation derating
Power dissipation derating
(Ta ≥ 25°C)(single circuit)
Junction temperature
Total package power dissipation derating
(Ta ≥ 25°C)
Isolation voltage
(Note 4)
Unit
(Note): Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 3): 100μs pulse, 100Hz frequency
(Note 4): AC, 1 min., R.H.≤ 60%. Apply voltage to LED pin and detector pin together.
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TLP781/TLP781F
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ.
Max
Unit
Supply voltage
VCC
―
5
24
V
Forward current
IF
―
16
25
mA
Collector current
IC
―
1
10
mA
Topr
−25
―
85
°C
Operating temperature
(Note): Recommended operating conditions are given as a design guideline
to obtain expected performance of the device.
Additionally, each item is an independent guideline respectively.
In developing designs using this product, please confirm
specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
―
―
10
μA
Capacitance
CT
V = 0, f = 1 MHz
―
30
―
pF
Collector−emitter
breakdown voltage
V(BR) CEO
IC = 0.5 mA
80
―
―
V
Emitter−collector
breakdown voltage
V(BR) ECO
IE = 0.1 mA
7
―
―
V
VCE = 24 V
―
0.01
0.1
VCE = 24 V
Ta = 85°C
―
0.6
50
V = 0, f = 1 MHz
―
10
―
pF
Min
Typ.
Max
Unit
50
―
600
100
―
600
―
60
―
30
―
―
―
―
0.4
―
0.2
―
―
―
0.4
Min
Typ.
Max
Unit
―
0.8
―
pF
―
Ω
Collector dark current
Capacitance
(collector to emitter)
ID(ICEO)
CCE
μA
μA
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Symbol
IC / IF
IC / IF (sat)
Test Condition
IF = 5 mA, VCE = 5 V
IF = 1 mA, VCE = 0.4 V
Rank GB
Rank GB
IC = 2.4 mA, IF = 8 mA
Collector−emitter saturation
voltage
VCE (sat)
IC = 0.2 mA, IF = 1 mA
Rank GB
%
%
V
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Capacitance
(input to output)
CS
VS = 0, f = 1 MHz
Isolation resistance
RS
VS = 500 V
AC, 1 minute
Isolation voltage
BVS
12
1×10
10
14
5000
―
―
AC, 1 second, in oil
―
10000
―
DC, 1 minute, in oil
―
10000
―
3
Vrms
Vdc
2007-12-05
TLP781/TLP781F
Switching Characteristics (Ta = 25°C)
Characteristics
Symbol
Rise time
tr
Fall time
tf
Turn−on time
ton
Test Condition
VCC = 10 V, IC = 2 mA
RL = 100Ω
Min
Typ.
Max
―
2
―
―
3
―
―
3
―
Turn−off time
toff
―
3
―
Turn−on time
tON
―
2
―
―
25
―
―
50
―
Storage time
ts
Turn−off time
tOFF
RL = 1.9 kΩ
VCC = 5 V, IF = 16 mA
(Note 5)
Unit
μs
μs
IF
IF
RL
VCC
ts
VCE
VCC
4.5V
VCE
tON
0.5V
tOFF
(Note 5): Switching time test circuit
Surface-Mount Lead Form Options
TLP781(LF6)
TOSHIBA
TLP781F(LF7)
Unit in mm
TOSHIBA
―
Unit in mm
―
Weight : 0.24g (typ.)
Weight : 0.24g (typ.)
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TLP781/TLP781F
Specifications for Embossed-Tape Packing: (TP6), (TP7)
1. Applicable Package
Package Name
Product Type
DIP4LF6
TLP781
DIP4LF7
TLP781F
2. Product Naming System
Type of package used for shipment is denoted by a symbol suffix after a product number. The method of
classification is as below.
(Example 1)
ＴＬＰ７８１（ＢＬ－ＴＰ６）
Tape type
CTR rank
Device name
(Example 2)
ＴＬＰ７８１F（ＢＬ－ＴＰ７）
Tape type
CTR rank
Device name
3. Tape Dimensions
3.1 Orientation of Device in Relation to Direction of Tape Movement
Device orientation in the recesses is as shown in Figure 1.
Tape feed
Figure1 Device Orientation
3.2 Tape Packing Quantity:2000 devices per reel
3.3 Empty Device Recesses Are as Shown in Table 1.
Table1 Empty Device Recesses
Occurrences of 2 or more
successive empty device
recesses
Single empty
recesses
device
Standard
Remarks
0
Within any given 40-mm section of
tape, not including leader and trailer
6 devices (max.) per reel
Not including leader and trailer
3.4 Start and End of Tape
The start of the tape has 30 or more empty holes. The end of the tape has 50 or more empty holes.
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2007-12-05
TLP781/TLP781F
3.5 Tape Specification
[1] TLP781 (TP6)
(1)Tape material: Plastic
(2)Dimensions: The tape dimensions are as shown in Figure 2.
+0.2
16.0 -0.1
4.0±0.1
8.0±0.1
10.6±0.1
φ1.5 +0.1
-0
7.5±0.1
0.33±0.02
1.75±0.1
2.0±0.1
φ1.5 +0.2
-0
4.2±0.1
4.45±0.1
Figure 2 Tape Forms
[2] TLP781F (TP7)
(1)Tape material: Plastic
(2)Dimensions: The tape dimensions are as shown in Figure 3.
4.4±0.1
φ1.5 +0.25
-0
+0.3
4.0±0.1
24.0 -0.1
8.0±0.1
11.5±0.1
φ1.5 +0.1
-0
12.35±0.1
0.33±0.02
1.75±0.1
2.0±0.1
5.05±0.1
Figure 3 Tape Forms
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2007-12-05
TLP781/TLP781F
3.6 Reel Specification
[1] TLP781 (TP6)
(1)Material: Plastic
(2)Dimensions: The reel dimensions are as shown in Figure 4.
3.6±0.8
+2.0
1.5±0.5
23max
φ332 max
φ102±1.5
φ13.0±0.5
16.4 -0
Unit: mm
Figure 4 Reel Forms
[2] TLP781F (TP7)
(1)Material: Plastic
(2)Dimensions: The reel dimensions are as shown in Figure 5.
+2.0
φ330 max
φ13.0±0.5
φ100±1.5
24.4 -0
4.0±0.3
1.9±0.5
31max
Figure 5 Reel Forms
4. Packing
One reel of photocouplers is packed in a shipping carton.
5. Label Indication
The carton bears a label indicating the product number, the symbol representing classification of standard, the
quantity, the lot number and the Toshiba company name.
6. Ordering Information
When placing an order, please specify the product number, the CTR rank, the tape type and the quantity as
shown in the following example.
(Example)
ＴＬＰ７８１（ＢＬ－ＴＰ６）2000Pcs.
Quantity (must be a multiple of 2000)
Tape type
CTR rank
Device name
(Note): The order code may be suffixed with wither a letter or a digit.
Please contact your nearest Toshiba sales representative for more details.
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TLP781/TLP781F
Soldering and Storage
1. Soldering
1.1 Soldering
When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as
much as possible by observing the following conditions.
1) Using solder reflow
·Temperature profile example of lead (Pb) solder
(°C)
This profile is based on the device’s
maximum heat resistance guaranteed
value.
Set the preheat temperature/heating
temperature to the optimum temperature
corresponding to the solder paste
type used by the customer within the
described profile.
Package surface temperature
240
210
160
140
less than 30s
60～120s
Time
(s)
·Temperature profile example of using lead (Pb)-free solder
(°C)
This profile is based on the device’s
maximum heat resistance guaranteed
value.
Set the preheat temperature/heating
temperature to the optimum temperature
corresponding to the solder paste
type used by the customer within the
described profile.
Package surface temperature
260
230
190
180
60～120s
30～50s
Time
(s)
2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder)
・Please preheat it at 150°C between 60 and 120 seconds.
・Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once.
3) Using a soldering iron
Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may
be heated at most once.
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TLP781/TLP781F
2. Storage
1) Avoid storage locations where devices may be exposed to moisture or direct sunlight.
2) Follow the precautions printed on the packing label of the device for transportation and storage.
3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%,
respectively.
4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
6) When restoring devices after removal from their packing, use anti-static containers.
7) Do not allow loads to be applied directly to devices while they are in storage.
8) If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
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TLP781/TLP781F
EN60747 Isolation Characteristics
Types: TLP781, TLP781F
Type designations for ‘option: (D4) ’, which are tested under EN60747 requirements.
Ex.: TLP781 (D4-GR-LF6)
D4: EN60747 option
GR: CTR rank name
LF6: standard lead bend name
Note: Use TOSHIBA standard type number for safety standard application.
Ex. TLP781 (D4-GR-LF6) → TLP781
Description
Symbol
Rating
Unit
Application classification
―
I−IV
I−III
for rated mains voltage ≤ 300 Vrms
for rated mains voltage ≤ 600 Vrms
Climatic classification
55 / 115 / 21
―
2
―
VIORM
890
Vpk
Input to output test voltage,
Vpr = 1.5×VIORM, type and sample test
tp = 10s, partial discharge < 5pC
Vpr
1335
Vpk
Input to output test voltage,
Vpr = 1.875×VIORM, 100% production test
tp = 1s, partial discharge < 5pC
Vpr
1670
Vpk
Highest permissible overvoltage
(transient overvoltage, tpr = 60s)
VTR
6000
Vpk
Safety limiting values (max. permissible ratings in case of
fault)
current (input current IF, Psi = 0)
power (output or total power dissipation)
temperature
Isi
Psi
Tsi
300
500
150
mA
mW
°C
Insulation resistance,
Rsi
≧10
Pollution degree
Maximum operating insulation voltage
VIO = 500V,Ta=25℃
10
12
Ω
2007-12-05
TLP781/TLP781F
Insulation Related Specifications
7.62mm pitch
TLPxxx type
10.16mm pitch
TLPxxxF type
Minimum creepage distance
Cr
6.5mm
8.0mm
Minimum clearance
Cl
6.5mm
8.0mm
Minimum insulation thickness
ti
Comparative tracking index
0.4 mm
175
CTI
(1)
If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this
value. (e.g.at a standard distance between soldering eye centres of 7.5mm). If this is not permissible,
the user shall take suitable measures.
(2)
This photocoupler is suitable for ‘safe electrical isolation’ only within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuits.
VDE test sign: Marking on product
for EN60747
4
Marking on packing
for EN60747
Marking Example: TLP781, TLP781F
Lot No.
P
Device Name
CTR Rank Marking
4: Mark for option (D4)
1pin indication
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2007-12-05
TLP781/TLP781F
PC – Ta
200
80
160
Allowable collector power
dissipation PC (mW)
Allowable forward current
IF (mA)
IF – Ta
100
60
40
20
120
80
40
0
−20
0
-20
0
20
40
60
80
100
120
0
Ambient temperature Ta (℃)
ΔVF / ΔTa
40
60
80
100
120
Ambient temperature Ta (℃)
– IF
IF – VF
-2.6
(mA)
100.0
-2.2
Forward current IF
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / ℃)
-3.0
20
-1.8
-1.4
10.0
1.0
-1.0
-0.6
0.1
0.1
0
1
Forward current
10
IF
100
0.40
0.60
0.80
1.00
1.20
Forward voltage VF
(mA)
1.40
1.60
(V)
IFP – VFP
1000
Pulse forward current IFP (mA)
Pulse width ≤ 10μs
Repetitive
frequency=100Hz
Ta = 25℃
100
10
1
0.00
0.40
0.80
1.20
Pulse forward voltage
1.60
2.00
2.40
VFP (V)
*: The above graphs show typical characteristics.
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2007-12-05
TLP781/TLP781F
ID – Ta
IC – VCE
80
(mA)
1
60
Collector current IC
Collector dark current IC
(μA)
10
0.1
0.01
0.001
50
40
30
20
15
10
20
5
IF= 2 mA
0
0.0001
0
0
20
40
60
80
Ambient temperature Ta
(℃)
6
8
10
VCE (V)
IC – IF
100.00
50
20
30
10.00
(mA)
20
15
10
10
Collector current IC
(mA)
Collector current IC
4
Collector-emitter voltage
IC – VCE
30
2
100
5
IF= 2 mA
0
0.0
0.2
0.4
0.6
0.8
Collector-emitter voltage
1.0
1.2
1.00
VCE (V)
0.10
IC /IF – IF
Current transfer ratio
IC / IF (%)
1000
Ta = 25°C
VCE = 5V
VCE = 0.4V
0.01
0.1
100
1
Forward current IF
10
10
100
(mA)
Ta = 25°C
VCE = 5V
VCE = 0.4V
1
0.1
1
Forward current IF
10
100
(mA)
*: The above graphs show typical characteristics.
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2007-12-05
TLP781/TLP781F
IC – Ta
VCE(sat) – Ta
0.20
100
IC = 1 mA
10mA
Collector-emitter saturation
voltage VCE(sat) (V)
Collector current IC (mA)
IF = 5 mA
VCE = 5V
20mA
5mA
10
1mA
1
IF= 0.5 mA
0.1
0
0.16
0.12
0.08
0.04
0.00
-40
-20
0
20
40
Ambient temperature
60
80
-40
100
-20
0
20
40
Ambient temperature
Ta (℃)
60
80
100
Ta (℃)
Switching Time – RL
1000
Ta = 25°C
IF = 16mA
VCC = 5V
tOFF
Switching time (μs)
100
tS
10
tON
1
1
10
100
Load resistance RL (kΩ)
*: The above graphs show typical characteristics.
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2007-12-05
TLP781/TLP781F
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-12-05