SUPERTEX TN5325

TN5325
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Product marking for SOT-23:
Order Number / Package
BVDSS /
BVDGS
RDS(ON)
(max)
VGS(th)
(max)
ID(on)
(min)
TO-236AB*
TO-92
TO-243AA**
N3C❋
250V
7.0Ω
2.0V
1.2A
TN5325K1
TN5325N3
TN5325N8
where ❋ = 2-week alpha date code
* Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
** Shipped on 2,000 piece carrier tape and reels.
Product marking for TO-243AA
Features
TN3C❋
❏ Low threshold – 2.0V max.
Where ❋ = 2-week alpha date code
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Low CISS and fast switching speeds
Advanced DMOS Technology
❏ Excellent thermal stability
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
Package Options
❏ Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
BVDSS
D
G
D
S
BVDGS
S G D
± 20V
TO-92
-55°C to +150°C
TO-243AA
(SOT-89)
D
G
S
TO-236AB
(SOT-23)
300°C
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
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TN5325
Thermal Characteristics
Package
ID (continuous)*
TO-236AB
ID (pulsed)
Power Dissipation
θjc
θja
@ TA = 25°C
°C/W
°C/W
0.36W
200
350
IDR*
IDRM
150mA
400mA
150mA
400mA
TO-92
215mA
800mA
0.74W
125
170
215mA
800mA
TO-243AA
316mA
1.5A
1.6W**
15
78**
316mA
1.5A
* ID (continuous) is limited by max rated Tj.
**Mounted on FR5 board. 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
250
VGS(th)
Gate Threshold Voltage
0.6
∆V GS(th)
Typ
Max
Unit
Conditions
V
ID = 100µA, VGS = 0V
2.0
V
VGS = VDS, ID = 1mA
Change in VGS(th) with Temperature
-4.5
mV/°C
ID = 1mA, VGS = VDS
IGSS
Gate Body Leakage
100
nA
VGS = ±20V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
1.0
µA
VGS = 0V, VDS = 100V
10.0
µA
VGS = 0V, VDS = Max Rating
1.0
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ON-State Drain Current
0.6
RDS(ON)
VGS = 4.5V, VDS = 25V
A
1.2
Static Drain-to-Source
ON-State Resistance
VGS = 10V, VDS = 25V
8.0
Ω
VGS = 4.5V, ID = 150mA
7.0
Ω
VGS = 10V, ID = 1.0A
1.0
%/°C
∆RDS(ON)
Change in RDS(ON) with Temperature
GFS
Forward Transconductance
CISS
Input Capacitance
COSS
Common Source Output Capacitance
60
CRSS
Reverse Transfer Capacitance
23
td(ON)
Turn-ON Delay Time
20
tr
Rise Time
15
td(OFF)
Turn-OFF Delay Time
25
tf
Fall Time
25
VSD
Diode Forward Voltage Drop
1.8
trr
Reverse Recovery Time
150
m
VGS = 4.5V, ID = 150mA
Ω
ID(ON)
VDS = 25V, ID = 200mA
110
300
pF
VGS = 0V, VDS = 25V, f = 1MHz
ns
VDD = 25V
ID = 150mA
RGEN = 25Ω
V
ISD = 200mA, VGS = 0V
ns
ISD = 200mA, VGS = 0V
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
10V
90%
PULSE
GENERATOR
INPUT
0V
10%
t(ON)
td(ON)
t(OFF)
tr
td(OFF)
OUTPUT
Rgen
tF
D.U.T.
VDD
10%
INPUT
10%
OUTPUT
0V
90%
90%
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com