TN5325 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Product marking for SOT-23: Order Number / Package BVDSS / BVDGS RDS(ON) (max) VGS(th) (max) ID(on) (min) TO-236AB* TO-92 TO-243AA** N3C❋ 250V 7.0Ω 2.0V 1.2A TN5325K1 TN5325N3 TN5325N8 where ❋ = 2-week alpha date code * Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. ** Shipped on 2,000 piece carrier tape and reels. Product marking for TO-243AA Features TN3C❋ ❏ Low threshold – 2.0V max. Where ❋ = 2-week alpha date code ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Low CISS and fast switching speeds Advanced DMOS Technology ❏ Excellent thermal stability These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Logic level interfaces – ideal for TTL and CMOS Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers Package Options ❏ Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* BVDSS D G D S BVDGS S G D ± 20V TO-92 -55°C to +150°C TO-243AA (SOT-89) D G S TO-236AB (SOT-23) 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TN5325 Thermal Characteristics Package ID (continuous)* TO-236AB ID (pulsed) Power Dissipation θjc θja @ TA = 25°C °C/W °C/W 0.36W 200 350 IDR* IDRM 150mA 400mA 150mA 400mA TO-92 215mA 800mA 0.74W 125 170 215mA 800mA TO-243AA 316mA 1.5A 1.6W** 15 78** 316mA 1.5A * ID (continuous) is limited by max rated Tj. **Mounted on FR5 board. 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSS Drain-to-Source Breakdown Voltage 250 VGS(th) Gate Threshold Voltage 0.6 ∆V GS(th) Typ Max Unit Conditions V ID = 100µA, VGS = 0V 2.0 V VGS = VDS, ID = 1mA Change in VGS(th) with Temperature -4.5 mV/°C ID = 1mA, VGS = VDS IGSS Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 1.0 µA VGS = 0V, VDS = 100V 10.0 µA VGS = 0V, VDS = Max Rating 1.0 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ON-State Drain Current 0.6 RDS(ON) VGS = 4.5V, VDS = 25V A 1.2 Static Drain-to-Source ON-State Resistance VGS = 10V, VDS = 25V 8.0 Ω VGS = 4.5V, ID = 150mA 7.0 Ω VGS = 10V, ID = 1.0A 1.0 %/°C ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance COSS Common Source Output Capacitance 60 CRSS Reverse Transfer Capacitance 23 td(ON) Turn-ON Delay Time 20 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 25 tf Fall Time 25 VSD Diode Forward Voltage Drop 1.8 trr Reverse Recovery Time 150 m VGS = 4.5V, ID = 150mA Ω ID(ON) VDS = 25V, ID = 200mA 110 300 pF VGS = 0V, VDS = 25V, f = 1MHz ns VDD = 25V ID = 150mA RGEN = 25Ω V ISD = 200mA, VGS = 0V ns ISD = 200mA, VGS = 0V Notes: 1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) t(OFF) tr td(OFF) OUTPUT Rgen tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 2 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com