VN1506 VN1509 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information † Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) 60V 3.0Ω 2.0A VN01506NW 90V 3.0Ω 2.0A VN1509NW Die† MIL visual screening available. Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* -55°C to +150°C 300°C * Distance of 1.6 mm from case for 10 seconds. 03/26/02 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. VN1506/VN1509 Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS Parameter Drain-to-Source Breakdown Voltage Min VN1509 90 VN1506 60 VGS(th) Gate Threshold Voltage ∆VGS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current Typ 0.8 -3.8 Max ON-State Drain Current VGS = 0V, ID = 1mA 2.4 V VGS = VDS, ID = 1mA -5.5 mV/°C VGS = VDS, ID = 1mA 100 nA 1 0.5 1.0 2.0 2.5 3.0 5.0 Static Drain-to-Source ON-State Resistance ∆RDS(ON) Change in RDS(ON) with Temperature 2.5 3.0 0.70 1 GFS Forward Transconductance CISS Input Capacitance 55 65 COSS Common Source Output Capacitance 20 25 CRSS Reverse Transfer Capacitance 5 8 td(ON) Turn-ON Delay Time 3 5 tr Rise Time 5 8 450 td(OFF) Turn-OFF Delay Time 6 9 tf Fall Time 5 8 VSD Diode Forward Voltage Drop 1.2 1.8 trr Reverse Recovery Time 400 VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating µA A RDS(ON) 300 Conditions V 100 ID(ON) Unit Ω VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 250mA VGS = 10V, ID = 1A %/°C VGS = 10V, ID = 1A m VDS = 25V, ID = 0.5A pF VGS = 0V, VDS = 25V f = 1 MHz ns VDD = 25V ID = 1A RGEN = 25Ω V VGS = 0V, ISD =1.0A ns VGS = 0V, ISD =1.0A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 03/26/02 ©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com