TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain : hFE = 100 to 300 (IC = 0.3 A) • Low collector-emitter saturation : VCE (sat) = 0.2 V (max) • High-speed switching : tf = 100 ns (typ.) 0.475 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Collector-base voltage Collector current Rating VCEX 150 VCEO 100 VEBO 7 (Note 1) IC 2.0 Pulse (Note 1 ) ICP 4.0 IB 0.2 DC Base current Collector power dissipation (t = 10s) Junction temperature Storage temperature range t = 10s DC PC (Note 2) B 0.05 M B 2.9±0.1 180 Emitter-base voltage 4 0.65 VCBO Collector-emitter voltage 1 3.3 1.3 A 0.8±0.05 Unit V S 0.025 S 0.28 +0.1 -0.11 0.17±0.02 +0.13 1.12 -0.12 V 1.12 +0.13 -0.12 V A A W Tj 150 °C Tstg −55 to 150 °C 2.8±0.1 • 2.4±0.1 8 1.Collector 2.Collector 3.Collector 4.Base 0.28 +0.1 -0.11 5.Emitter 6.Collector 7.Collector 8.Collector JEDEC ― JEITA ― TOSHIBA 2-3V1A Weight: 0.017 g (typ.) Note 1: Please use devices on condition that the junction temperature is below 150°C. Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 TPCP8501 Figure 1. Circuit configuration (top view) Figure 2. 8 7 6 5 Marking (Note 4) 8 7 6 5 8501 Type ※ 1 2 3 4 1 2 3 4 Lot No. (Weekly code) Note 4: ● on lower left on the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 180 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IB = 0 180 ⎯ ⎯ V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 100 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.3 A 100 ⎯ 300 hFE (2) VCE = 2 V, IC = 1.0 A 80 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 33 mA ⎯ ⎯ 0.2 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 33 mA ⎯ ⎯ 1.1 V VCB = 10 V, IE = 0, f = 1MHz ⎯ 23 ⎯ pF ⎯ 65 ⎯ ns ⎯ 1.4 ⎯ μs ⎯ 100 ⎯ ns DC current gain Collector output capacitance Cob Rise time Switching time tr Storage time tstg Fall time tf See Figure 3 circuit diagram VCC ∼ − 50 V, RL = 50 Ω IB1 = −IB2 = 33 mA Figure 3. Switching Time Test Circuit & Timing Chart 20μs VCC RL IB1 IB2 Input Output IB1 Duty cycle ＜1% IB2 2 2006-11-13 TPCP8501 IC – VCE 2.0 hFE – IC 20 1000 16 Collector current 1.2 6 0.8 4 0.4 Common emitter Ta = 25°C Single nonrepetitive pulse IB = 2 mA 0 0 1 3 2 4 Collector−emitter voltage 5 VCE Ta = 100°C hFE DC current gain 8 IC (A) 14 10 1.6 25 100 −55 Common emitter VCE = 2 V Single nonrepetitive pulse 10 0.001 6 0.01 (V) Base-emitter saturation voltage VBE (sat) (V) Collector−emitter saturation voltage VCE (sat) (V) 0.1 Ta = 100°C −55°C 25°C 0.01 0.1 Collector current IC Ta = −55°C 1 100°C 25°C 0.1 0.001 10 1 0.01 (A) 0.1 (W) PC (A) Collector power dissipation Collector current 1.2 0 0 −55 Ta = 100°C 0.4 25 0.2 0.4 0.6 Base−emitter voltage IC (A) Pc – Ta 1.4 Common emitter VCE = 2 V Single nonrepetitive pulse 0.8 10 1 Collector current IC 1.6 (A) Common emitter β = 30 Single nonrepetitive pulse IC – VBE 2.0 IC 10 VBE (sat) – IC 10 Common emitter β = 30 Single nonrepetitive pulse 0.01 0.001 1 Collector current VCE (sat) – IC 1 0.1 0.8 VBE 1.0 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.2 (V) Mounted on an FR4 board glass epoxy, 2 1.6 mm thick, Cu area: 645 mm ) 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 3 2006-11-13 TPCP8501 rth – tw Transient thermal resistance rth(j-a) (°C/W) 1000 100 10 1 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 0.1 0.0001 0.001 0.01 0.1 1 Pulse width tw 10 100 1000 (s) Safe operating area 10 IC max (Pulsed)* 1 ms* 1 10 ms* 100 ms* IC max (Continuous)* 0.1 10 s* DC operation Ta = 25°C *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t 0.01 mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. 0.001 0.1 1 10 Collector−emitter voltage VCEO max Collector current IC (A) 100 μs* 100 1000 VCE (V) 4 2006-11-13 TPCP8501 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-13