Typical Size 6,4 mm X 9,7 mm TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 3-V TO 6-V INPUT, 6-A OUTPUT SYNCHRONOUS BUCK PWM SWITCHER WITH INTEGRATED FETs (SWIFT™) FEATURES • • • • • • • • Qualified for Automotive Applications 30-mΩ, 12-A Peak MOSFET Switches for High Efficiency at 6-A Continuous Output Source or Sink Current Adjustable Output Voltage Down to 0.9 V With 1.0% Accuracy Wide PWM Frequency: Fixed 350 kHz, 550 kHz or Adjustable 280 kHz to 700 kHz Synchronizable to 700 kHz Load Protected by Peak Current Limit and Thermal Shutdown Integrated Solution Reduces Board Area and Component Count SWIFT Documentation, Application Notes, and Design Software: www.ti.com/swift APPLICATIONS • • • • Low-Voltage, High-Density Distributed Power Systems Point of Load Regulation for High Performance DSPs, FPGAs, ASICs, and Microprocessors Broadband, Networking, and Optical Communications Infrastructure Portable Computing/Notebook PCs DESCRIPTION As a member of the SWIFT™ family of dc/dc regulators, the TPS54610 low-input voltage high-output current synchronous buck PWM converter integrates all required active components. Included on the substrate with the listed features are a true, high-performance, voltage error amplifier that enables maximum performance and flexibility in choosing the output filter L and C components; an under-voltage-lockout circuit to prevent start-up until the input voltage reaches 3 V; an internally or externally set slow-start circuit to limit inrush currents; and a power good output, useful for processor/logic reset, fault signaling, and supply sequencing. The TPS54610 is available in a thermally enhanced 28-pin TSSOP (PWP) PowerPAD™ package, which eliminates bulky heatsinks. TI provides evaluation modules and the SWIFT™ designer software tool to aid in quickly achieving high-performance power supply designs to meet aggressive equipment development cycles. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. SWIFT, PowerPAD are trademarks of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007, Texas Instruments Incorporated TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. SIMPLIFIED SCHEMATIC EFFICIENCY AT 350 kHz 100 Input Output VIN 95 PH 90 TPS54610 BOOT Efficiency − % 85 PGND VSENSE VBIAS AGND COMP 80 75 70 65 VI = 5 V, VO = 3.3 V 60 55 50 0 1 2 3 4 5 6 Load Current − A ORDERING INFORMATION (1) (1) (2) 2 TJ OUTPUT VOLTAGE PACKAGE (2) PART NUMBER 40°C to 125°C Adjustable down to 0.9 V Plastic HTSSOP (PWP) TPS54610QPWPRQ1 For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. See the application section of the data sheet for PowerPAD drawing and layout information. Submit Documentation Feedback TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted (1) TPS54610 VI VO Input voltage range Output voltage range IO Source current IS Sink current VIN, SS/ENA, SYNC –0.3 V to 7 V RT –0.3 V to 6 V VSENSE –0.3 V to 4 V BOOT –0.3 V to 17 V VBIAS, COMP, PWRGD –0.3 V to 7 V PH –0.6 V to 10 V PH Internally Limited COMP, VBIAS Voltage differential 6 mA PH 12 A COMP 6 mA SS/ENA, PWRGD 10 mA AGND to PGND ±0.3 V TJ Operating virtual junction temperature range –40°C to 150°C Tstg Storage temperature –65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (1) 300°C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Recommended Operating Conditions VI Input voltage TJ Operating junction temperature MIN MAX 3 6 UNIT V –40 125 °C Dissipation Ratings (1) (2) (1) (2) (3) PACKAGE THERMAL IMPEDANCE JUNCTION-TO-AMBIENT TA = 25°C POWER RATING TA = 70°C POWER RATING TA = 85°C POWER RATING 28 Pin PWP with solder 18.2 °C/W 5.49 W (3) 3.02 W 2.20 W 28 Pin PWP without solder 40.5 °C/W 2.48 W 1.36 W 0.99 W For more information on the PWP package, refer to TI technical brief, literature number SLMA002. Test board conditions: a. 3” x 3”, 4 layers, thickness: 0.062” b. 1.5-oz. copper traces located on the top of the PCB c. 1.5-oz. copper ground plane on the bottom of the PCB d. 0.5-oz. copper ground planes on the 2 internal layers e. 12 thermal vias (see Recommended Land Pattern in applications section of this data sheet Maximum power dissipation may be limited by over current protection. Submit Documentation Feedback 3 TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 Electrical Characteristics TJ = –40°C to 125°C, VI = 3 V to 6 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VOLTAGE, VIN Input voltage range, VIN IQ Quiescent current 3 6 fs = 350 kHz, SYNC ≤ 0.8 V, RT open, PH pin open 11 15.8 fs = 550 kHz, SYNC ≥ 2.5 V, RT open, PH pin open 16 23.5 Shutdown, SS/ENA = 0 V 1 1.4 2.95 3.0 V mA UNDER VOLTAGE LOCK OUT Start threshold voltage, UVLO V Stop threshold voltage, UVLO 2.70 2.80 Hysteresis voltage, UVLO 0.14 0.16 V 2.5 µs Rising and falling edge deglitch, UVLO (1) V BIAS VOLTAGE Output voltage, VBIAS I(VBIAS) = 0 2.70 2.80 Output current, VBIAS (2) 2.95 V 100 µA 0.900 V CUMULATIVE REFERENCE Vref Accuracy 0.882 0.891 REGULATION Line regulation (1) (2) (3) Load regulation (1) (3) IL = 3 A, fs = 350 kHz, TJ = 125°C 0.07 IL = 3 A, fs = 550 kHz, TJ = 125°C 0.07 IL = 0 A to 6 A, fs = 350 kHz, TJ = 125°C 0.03 IL = 0 A to 6 A, fs = 550 kHz, TJ = 125°C 0.03 %/V %/A OSCILLATOR Internally set—free running frequency SYNC ≤ 0.8 V, RT open 265 350 440 SYNC ≥ 2.5 V, RT open 415 550 680 RT = 180 kΩ (1% resistor to AGND) (1) 252 280 308 290 312 350 663 700 762 Externally set—free running frequency range RT = 160 kΩ (1% resistor to AGND) RT = 68 kΩ (1% resistor to AGND) (1) High level threshold, SYNC (1) Low level threshold, 2.5 0.8 50 Frequency range, SYNC (1) 4 V 200 Maximum duty cycle (1) 90% Specified by design Static resistive loads only Specified by the circuit used in Figure 10 Submit Documentation Feedback kHz V 1 Minimum controllable on time (1) (1) (2) (3) 700 0.75 Ramp amplitude (peak-to-peak) (1) V ns 330 Ramp valley (1) kHz V SYNC (1) Pulse duration, external synchronization, SYNC (1) kHz ns TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 Electrical Characteristics (continued) TJ = –40°C to 125°C, VI = 3 V to 6 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ERROR AMPLIFIER Error amplifier open loop voltage gain 1 kΩ COMP to AGND (4) 90 110 Error amplifier unity gain bandwidth Parallel 10 kΩ, 160 pF COMP to AGND (4) 3 5 Error amplifier common mode input voltage range Powered by internal LDO (4) 0 Input bias current, VSENSE (4) VSENSE = Vref 60 Output voltage slew rate (symmetric), COMP (4) 1 dB MHz VBIAS V 250 nA 1.4 V/µs PWM COMPARATOR PWM comparator propagation delay time, PWM comparator input to PH pin (excluding deadtime) 10-mV overdrive (4) 70 85 ns 1.20 1.40 V SLOW-START/ENABLE Enable threshold voltage, SS/ENA Enable hysteresis voltage, 0.82 SS/ENA (4) Falling edge deglitch, SS/ENA (4) Internal slow-start time (4) 2.6 0.03 V 2.5 µs 3.35 4.1 ms Charge current, SS/ENA SS/ENA = 0 V 2.5 5 8 µA Discharge current, SS/ENA SS/ENA = 1.2 V, VI = 2.7 V 1.2 2.3 4 mA POWER GOOD Power good threshold voltage VSENSE falling Power good hysteresis voltage (4) Power good falling edge deglitch (4) 90 %Vref 3 %Vref 35 Output saturation voltage, PWRGD I(sink) = 2.5 mA Leakage current, PWRGD VI = 5.5 V 0.18 µs 0.3 V 1 µA CURRENT LIMIT Current limit trip point VI = 3 V Output shorted (4) VI= 6 V Output shorted (4) 7.2 10 10 12 A Current limit leading edge blanking time (4) 100 ns Current limit total response time (4) 200 ns THERMAL SHUTDOWN Thermal shutdown trip point (4) 135 Thermal shutdown hysteresis (4) 150 165 10 °C °C OUTPUT POWER MOSFETS rDS(on) (4) (5) Power MOSFET switches VI = 6 V (5) 26 47 VI = 3 V (5) 36 65 mΩ Specified by design Matched MOSFETs low-side rDS(on) production tested, high-side rDS(on) specified by design Submit Documentation Feedback 5 TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 PWP PACKAGE (TOP VIEW) AGND VSENSE COMP PWRGD BOOT PH PH PH PH PH PH PH PH PH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 THERMAL 22 PAD 21 20 19 18 17 16 15 RT SYNC SS/ENA VBIAS VIN VIN VIN VIN VIN PGND PGND PGND PGND PGND Terminal Functions TERMINAL NO. AGND 1 Analog ground. Return for compensation network/output divider, slow-start capacitor, VBIAS capacitor, RT resistor and SYNC pin. Connect PowerPAD to AGND. BOOT 5 Bootstrap output. 0.022-µF to 0.1-µF low-ESR capacitor connected from BOOT to PH generates floating drive for the high-side FET driver. COMP 3 Error amplifier output. Connect frequency compensation network from COMP to VSENSE PGND 15-19 Power ground. High current return for the low-side driver and power MOSFET. Connect PGND with large copper areas to the input and output supply returns, and negative terminals of the input and output capacitors. A single point connection to AGND is recommended. PH 6-14 Phase output. Junction of the internal high-side and low-side power MOSFETs, and output inductor. PWRGD 4 Power good open drain output. High when VSENSE ≥ 90% Vref, otherwise PWRGD is low. Note that output is low when SS/ENA is low or the internal shutdown signal is active. RT 28 Frequency setting resistor input. Connect a resistor from RT to AGND to set the switching frequency. When using the SYNC pin, set the RT value for a frequency at or slightly lower than the external oscillator frequency. SS/ENA 26 Slow-start/enable input/output. Dual function pin that provides logic input to enable/disable device operation and capacitor input to externally set the start-up time. SYNC 27 Synchronization input. Dual function pin that provides logic input to synchronize to an external oscillator or pin select between two internally set switching frequencies. When used to synchronize to an external signal, a resistor must be connected to the RT pin. VBIAS 25 Internal bias regulator output. Supplies regulated voltage to internal circuitry. Bypass VBIAS pin to AGND pin with a high quality, low-ESR 0.1-µF to 1.0-µF ceramic capacitor. 20-24 Input supply for the power MOSFET switches and internal bias regulator. Bypass VIN pins to PGND pins close to device package with a high quality, low-ESR 10-µF ceramic capacitor. VIN VSENSE 6 DESCRIPTION NAME 2 Error amplifier inverting input. Connect to output voltage through compensation network/output divider. Submit Documentation Feedback TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 VBIAS AGND VIN Enable Comparator SS/ENA Falling Edge Deglitch 1.2 V Hysteresis: 0.03 V 2.5 µs VIN UVLO Comparator VIN 2.95 V Hysteresis: 0.16 V REG VBIAS SHUTDOWN VIN ILIM Comparator Thermal Shutdown 150°C 3−6V Leading Edge Blanking Falling and Rising Edge Deglitch 100 ns BOOT 30 mΩ 2.5 µs SS_DIS SHUTDOWN Internal/External Slow-start (Internal Slow-start Time = 3.35 ms PH + − R Q Error Amplifier Reference VREF = 0.891 V S PWM Comparator LOUT VO CO Adaptive Dead-Time and Control Logic VIN 30 mΩ OSC PGND Power-good Comparator PWRGD VSENSE Falling Edge Deglitch 0.90 Vref TPS54610 Hysteresis: 0.03 Vref VSENSE COMP RT SHUTDOWN 35 µs SYNC ADDITIONAL 6-A SWIFT™ DEVICES (SEE SLVS397 and SLVS400) DEVICE OUTPUT VOLTAGE DEVICE OUTPUT VOLTAGE DEVICE OUTPUT VOLTAGE TPS54611 0.9 V TPS54614 1.8 V TPS54672 DDR Memory/Adj. TPS54612 1.2 V TPS54615 2.5 V TPS54673 Pre-bias/Adj. TPS54613 1.5 V TPS54616 3.3 V TPS54680 Sequencing/Adj. RELATED DC/DC PRODUCTS • • • TPS40000 dc/dc controller TPS759xx 7.5-A low dropout regulator PT6440 series 6-A plugin modules Submit Documentation Feedback 7 TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 TYPICAL CHARACTERISTICS VIN = 3.3 V IO = 6 A 50 40 30 20 10 0 25 85 TJ − Junction Temperature − °C 60 VIN = 5 V 50 IO = 6 A 40 30 20 10 0 −40 125 0 25 85 TJ − Junction Temperature − °C 650 SYNC ≥ 2.5 V 550 450 SYNC ≤ 0.8 V 350 250 −40 25 85 125 Figure 3. EXTERNALLY SET OSCILLATOR FREQUENCY vs JUNCTION TEMPERATURE VOLTAGE REFERENCE vs JUNCTION TEMPERATURE DEVICE POWER LOSSES AT TJ = 125°C vs LOAD CURRENT 0.895 800 5 TJ = 125°C fs = 700 kHz 4.5 RT = 68 k 600 500 RT = 100 k 400 300 0.893 Device Power Losses − W 700 0.891 0.889 0.887 4 3 2.5 2 1.5 25 VI = 5 V 1 0.885 0 VI = 3.3 V 3.5 0.5 RT = 180 k 200 −40 0 TJ − Junction Temperature − °C Figure 2. 85 125 0 −40 0 25 85 TJ − Junction Temperature − °C 0 125 1 2 3 4 5 6 7 8 IL − Load Current − A Figure 4. Figure 5. Figure 6. OUTPUT VOLTAGE REGULATION vs INPUT VOLTAGE ERROR AMPLIFIER OPEN LOOP RESPONSE INTERNAL SLOW-START TIME vs JUNCTION TEMPERATURE RL = 10 kΩ, CL = 160 pF, TA = 25°C 120 0.893 3.80 0 140 TA = 85°C, IO = 3 A −20 −40 0.891 Gain − dB −60 fs = 550 kHz 0.889 80 Phase −80 −100 60 −120 40 Gain 20 −140 −160 0.887 0.885 0 −180 −20 −200 1 k 10 k 100 k 1 M 10 M 1 3 3.5 4 4.5 5 VI − Input Voltage − V Figure 7. 5.5 6 10 100 f − Frequency − Hz Figure 8. Submit Documentation Feedback Phase − Degrees 100 Internal Slow-Start Time − ms 0.895 VO − Output Voltage Regulation − V 125 750 Figure 1. TJ − Junction Temperature − °C 8 INTERNALLY SET OSCILLATOR FREQUENCY vs JUNCTION TEMPERATURE f − Internally Set Oscillator Frequency − kHz Drain-Source On-State Resistance − m Ω 60 0 −40 f − Externally Set Oscillator Frequency − kHz DRAIN-SOURCE ON-STATE RESISTANCE vs JUNCTION TEMPERATURE V ref − Voltage Reference − V Drain-Source On-State Resistance − m Ω DRAIN-SOURCE ON-STATE RESISTANCE vs JUNCTION TEMPERATURE 3.65 3.50 3.35 3.20 3.05 2.90 2.75 −40 0 25 85 TJ − Junction Temperature − °C Figure 9. 125 TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 APPLICATION INFORMATION Figure 10 shows the schematic diagram for a typical TPS54610 application. The TPS54610 (U1) can provide greater than 6 A of output current at a nominal output voltage of 3.3 V. For proper thermal performance, the exposed thermal PowerPAD under the integrated circuit package must be soldered to the printed-circuit board. VI + C2 220 µF 10 V U1 TPS54610PWP 28 R2 10 kΩ VIN VIN 27 26 25 C1 0.047 µF RT VIN SYNC VIN VIN SS/ENA PH PH VBIAS PH PWRGD 4 C4 0.1 µF 3 PH PWRGD PH PH COMP PH PH C8 10 µF 24 23 22 21 L1 4.7 µH 20 14 13 + 12 11 C9 + 470 µF 4V C10 470 µF 4V C11 100 pF VO 10 9 8 7 6 PH 5 VSENSE BOOT 19 PGND 18 PGND 17 PGND 16 1 AGND PGND 15 PGND POWERPAD C7 2 C3 120 pF C5 5600 pF 0.047 µF R1 9.09 kΩ C6 R3 3.74 kΩ R5 8200 pF 1.74 kΩ R4 10 kΩ Figure 10. Application Circuit Submit Documentation Feedback 9 TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 COMPONENT SELECTION The values for the components used in this design example were selected using the SWIFT designer software tool. SWIFT designer provides a complete design environment for developing dc-dc converters using the TPS54610. INPUT FILTER The input to the circuit is a nominal 5 VDC. The input filter C2 is a 220-µF POSCAP capacitor, with a maximum allowable ripple current of 3 A. C8 provides high frequency decoupling of the TPS54610 from the input supply and must be located as close as possible to the device. Ripple current is carried in both C2 and C8, and the return path to PGND must avoid the current circulating in the output capacitors C9 and C10. FEEDBACK CIRCUIT The resistor divider network of R3 and R4 sets the output voltage for the circuit at 3.3 V. R4, along with R1, R5, C3, C5, and C6 form the loop compensation network for the circuit. For this design, a Type 3 topology is used. OPERATING FREQUENCY In the application circuit, the 350 kHz operation is selected by leaving RT and SYNC open. Connecting a 180 kΩ to 68 kΩ resistor between RT (pin 28) and analog ground can be used to set the switching frequency to 280 kHz to 700 kHz. To calculate the RT resistor, use the equation below: 500 kHz R+ 100 [kW] Switching Frequency (1) OUTPUT FILTER The output filter is composed of a 4.7-µH inductor and two 470-µF capacitors. The inductor is a low dc resistance (12 mΩ) type, Coiltronics UP3B-4R7. The capacitors used are 4-V POSCAP types with a maximum ESR of 0.040 Ω. The feedback loop is compensated so that the unity gain frequency is approximately 25 kHz. PCB LAYOUT Figure 11 shows a generalized PCB layout guide for the TPS54610. The VIN pins are connected together on the printed-circuit board (PCB) and bypassed with a low-ESR ceramic-bypass capacitor. Care should be taken to minimize the loop area formed by the 10 bypass capacitor connections, the VIN pins, and the TPS54610 ground pins. The minimum recommended bypass capacitance is 10-mF ceramic capacitor with a X5R or X7R dielectric and the optimum placement is closest to the VIN pins and the PGND pins. The TPS54610 has two internal grounds (analog and power). Inside the TPS54610, the analog ground ties to all of the noise sensitive signals, while the power ground ties to the noisier power signals. Noise injected between the two grounds can degrade the performance of the TPS54610, particularly at higher output currents. However, ground noise on an analog ground plane can also cause problems with some of the control and bias signals. For these reasons, separate analog and power ground traces are recommended. There is an area of ground on the top layer directly under the IC, with an exposed area for connection to the PowerPAD. Use vias to connect this ground area to any internal ground planes. Additional vias are also used at the ground side of the input and output filter capacitors. The AGND and PGND pins are tied to the PCB ground by connecting them to the ground area under the device as shown. The only components that tie directly to the power ground plane are the input capacitors, the output capacitors, the input voltage decoupling capacitor, and the PGND pins of the TPS54610. Use a separate wide trace for the analog ground signal path. The analog ground is used for the voltage set point divider, timing resistor RT, slow-start capacitor and bias capacitor grounds. Connect this trace directly to AGND (Pin 1). The PH pins are tied together and routed to the output inductor. Since the PH connection is the switching node, the inductor is located close to the PH pins. The area of the PCB conductor is minimized to prevent excessive capacitive coupling. Connect the boot capacitor between the phase node and the BOOT pin as shown. Keep the boot capacitor close to the IC and minimize the conductor trace lengths. Connect the output filter capacitor(s) as shown between the VOUT trace and PGND. It is important to keep the loop formed by the PH pins, LOUT, COUT and PGND as small as practical. Place the compensation components from the VOUT trace to the VSENSE and COMP pins. Do not place these components too close to the PH trace. Due to the size of the IC package and the device pin-out, they must be routed close, but maintain as much separation as possible while still keeping the layout compact. Submit Documentation Feedback TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 Connect the bias capacitor from the VBIAS pin to analog ground using the isolated analog ground trace. If a slow-start capacitor or RT resistor is used, or if the SYNC pin is used to select 350-kHz operating frequency, connect them to this trace. ANALOG GROUND TRACE FREQUENCY SET RESISTOR AGND RT SYNC VSENSE COMPENSATION NETWORK COMP SLOW START CAPACITOR SS/ENA BIAS CAPACITOR PWRGD BOOT CAPACITOR BOOT PH VOUT PH OUTPUT INDUCTOR OUTPUT FILTER CAPACITOR VBIAS VIN EXPOSED POWERPAD AREA VIN PH VIN PH VIN PH VIN PH PGND PH PGND PH PGND PH PGND PH PGND VIN INPUT BYPASS CAPACITOR INPUT BULK FILTER TOPSIDE GROUND AREA VIA to Ground Plane Figure 11. Recommended Land Pattern for 28-Pin PWP PowerPAD Submit Documentation Feedback 11 TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 LAYOUT CONSIDERATIONS FOR THERMAL PERFORMANCE For operation at full rated load current, the analog ground plane must provide an adequate heat dissipating area. A 3-inch by 3-inch plane of 1 ounce copper is recommended, though not mandatory, depending on ambient temperature and airflow. Most applications have larger areas of internal ground plane available, and the PowerPAD must be connected to the largest area available. Additional areas on the top or bottom layers also help dissipate heat, and any area available must be used when 6 A or greater operation is desired. Connection from the exposed area of the PowerPAD to the analog ground 8 PL q 0.0130 4 PL q 0.0180 plane layer must be made using 0.013 inch diameter vias to avoid solder wicking through the vias. Eight vias must be in the PowerPAD area with four additional vias located under the device package. The size of the vias under the package, but not in the exposed thermal pad area, can be increased to 0.018. Additional vias beyond the twelve recommended that enhance thermal performance must be included in areas not under the device package. Minimum Recommended Thermal Vias: 8 x 0.013 Diameter Inside Powerpad Area 4 x 0.018 Diameter Under Device as Shown. Additional 0.018 Diameter Vias May Be Used if Top Side Analog Ground Area Is Extended. Connect Pin 1 to Analog Ground Plane in This Area for Optimum Performance 0.06 0.0150 0.0339 0.0650 0.0500 0.3820 0.3478 0.0500 0.0500 0.2090 0.0256 0.0650 0.0339 0.1700 0.1340 Minimum Recommended Top Side Analog Ground Area Minimum Recommended Exposed Copper Area for Powerpad. 5mm Stencils May Require 10 Percent Larger Area 0.0630 0.0400 Figure 12. Recommended Land Pattern for 28-Pin PWP PowerPAD 12 Submit Documentation Feedback TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 PERFORMANCE GRAPHS EFFICIENCY vs OUTPUT CURRENT EFFICIENCY vs OUTPUT CURRENT 100 100 95 95 90 90 LOAD REGULATION vs OUTPUT CURRENT 1.004 VI = 5 V, VO = 3.3 V, TA = 25°C, fs = 550 kHz 1.003 VO = 1.8 V 75 70 VO = 1.2 V 65 55 VO = 3.3 V 80 VO = 1.8 V 75 VO = 1.2 V 70 65 VI = 3.3 V, f = 550 kHz, L = 4.7 µH, TA = 25°C 60 VI = 5 V, f = 550 kHz, L = 4.7 µH, TA = 25°C 60 55 2 3 4 5 IO − Output Current − A 6 7 0.996 0 1 2 3 4 5 IO − Output Current − A Figure 13. LINE REGULATION vs INPUT VOLTAGE 1.002 1.0015 IO = 6 A 1.001 1.0005 Gain − dB 1 0.9995 7 4 5 6 125 180 VI = 5 V, VO = 3.3 V, IO = 6 A, TA = 25°C, fs = 550 kHz TJ = 125°C fs = 700 kHz 115 135 20 90 Phase 45 105 VI = 5 V 95 85 Safe Operating Area 75 65 VI = 3.3 V 55 45 35 −20 0.998 4.5 5 5.5 100 6 1k 10 k 100 k 0 1M 25 0 f − Frequency − Hz VI − Input Voltage − V 1 2 3 4 5 6 Figure 18. OUTPUT RIPPLE VOLTAGE LOAD TRANSIENT RESPONSE SLOW-START TIMING t - Time = 1 ms/div Figure 19. 8 t - Time = 100 ms/div Figure 20. VI = 5 V , No Slow-Start Cap Output Voltage - 2 V/div VI = 5 V, 1A to 5A, Input Voltage - 2 V/div Figure 17. Output Voltage - 50 mV/div Figure 16. VI = 5 V, VO = 3.3 V, 6 A, 350 kHz 7 IO − Output Current − A Output Current - 2 A/div 4 Output Ripple Voltage - 10 mV/div 3 LOOP RESPONSE 0.9985 (1) 2 AMBIENT TEMPERATURE vs LOAD CURRENT (1) 0 0.999 1 IO − Output Current − A Gain No Load 0 Figure 15. 40 IO = 3 A 6 Figure 14. 60 VI = 5 V, VO = 3.3 V, TA = 25°C, fs = 550 kHz 0.999 Ambient Temperature − ° C 1 1 0.997 50 0 1.001 0.998 Phase −Degrees 50 Line Regulation Load Regulation VO = 2.5 V 80 85 Efficiency − % Efficiency − % 1.002 85 t - Time = 2 ms/div Figure 21. Safe operating area is applicable to the test board conditions in the Dissipation Ratings. Submit Documentation Feedback 13 TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 Figure 22 shows the schematic diagram for a reduced size, high frequency application using the TPS54610. The TPS54610 (U1) can provide up to 6 A of output current at a nominal outputvoltage of 1.8 V. A small size 0.56-µH inductor is used and the switching frequency is set to 680 kHz by R1. The compensation network is optimized for fast transient response as shown in Figure 22. For good thermal performance, the PowerPAD under the integrated circuit TPS54610 needs to be soldered well to the printed-circuit board. Application information is available in TI literature number SLVA107, Designing for Small-Size, High-Frequency Applications With Swift™Family of Synchronous Buck Regulators. VI C1 10 µF U1 TPS54610PWP C2 10 µF R1 28 RT VIN 71.5 kΩ VIN 27 C3 0.047 µF 26 C4 1 µF 25 SYNC VIN SS/ENA PH VBIAS PWRGD C5 3 10 kΩ C6 VIN PH PH 4 R2 VIN PH PH COMP 470 pF PH PH PH 23 22 21 20 14 13 12 11 10 9 8 7 L1 0.56 µH 6 PH 5 C7 VSENSE BOOT 19 0.047 µF PGND 18 PGND R4 17 PGND 2.4 Ω 16 1 AGND PGND 15 PGND C11 POWERPAD 3300 pF 470 pF VO 2 R5 1.47 kΩ R3 39 Ω R6 1.5 kΩ 24 + C8 + 150 µF C12 0.012 µF 2 A/div 50 mV/div Figure 22. Small-Size, High-Frequency Design 10 µs/div Figure 23. Transient Response, 1.5-A to 4.5-A Step 14 Submit Documentation Feedback C9 150 µF C10 1 pF TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 DETAILED DESCRIPTION UNDERVOLTAGE LOCK OUT (UVLO) VBIAS REGULATOR (VBIAS) The TPS54610 incorporates an under voltage lockout circuit to keep the device disabled when the input voltage (VIN) is insufficient. During power up, internal circuits are held inactive until VIN exceeds the nominal UVLO threshold voltage of 2.95 V. Once the UVLO start threshold is reached, device start-up begins. The device operates until VIN falls below the nominal UVLO stop threshold of 2.8 V. Hysteresis in the UVLO comparator, and a 2.5-µs rising and falling edge deglitch circuit reduce the likelihood of shutting the device down due to noise on VIN. The VBIAS regulator provides internal analog and digital blocks with a stable supply voltage over variations in junction temperature and input voltage. A high quality, low-ESR, ceramic bypass capacitor is required on the VBIAS pin. X7R or X5R grade dielectrics are recommended because their values are more stable over temperature. The bypass capacitor must be placed close to the VBIAS pin and returned to AGND. SLOW-START/ENABLE (SS/ENA) The slow-start/enable pin provides two functions. First, the pin acts as an enable (shutdown) control by keeping the device turned off until the voltage exceeds the start threshold voltage of approximately 1.2 V. When SS/ENA exceeds the enable threshold, device start-up begins. The reference voltage fed to the error amplifier is linearly ramped up from 0 V to 0.891 V in 3.35 ms. Similarly, the converter output voltage reaches regulation in approximately 3.35 ms. Voltage hysteresis and a 2.5-µs falling edge deglitch circuit reduce the likelihood of triggering the enable due to noise. The second function of the SS/ENA pin provides an external means of extending the slow-start time with a low-value capacitor connected between SS/ENA and AGND. External loading on VBIAS is allowed, with the caution that internal circuits require a minimum VBIAS of 2.70 V, and external loads on VBIAS with ac or digital switching noise may degrade performance. The VBIAS pin may be useful as a reference voltage for external circuits. VOLTAGE REFERENCE The voltage reference system produces a precise Vref signal by scaling the output of a temperature stable bandgap circuit. During manufacture, the bandgap and scaling circuits are trimmed to produce 0.891 V at the output of the error amplifier, with the amplifier connected as a voltage follower. The trim procedure adds to the high precision regulation of the TPS54610, because it cancels offset errors in the scale and error amplifier circuits. OSCILLATOR AND PWM RAMP Adding a capacitor to the SS/ENA pin has two effects on start-up. First, a delay occurs between release of the SS/ENA pin and start-up of the output. The delay is proportional to the slow-start capacitor value and lasts until the SS/ENA pin reaches the enable threshold. The start-up delay is approximately: 1.2 V t +C d (SS) 5 mA (2) The oscillator frequency can be set to internally fixed values of 350 kHz or 550 kHz using the SYNC pin as a static digital input. If a different frequency of operation is required for the application, the oscillator frequency can be externally adjusted from 280 to 700 kHz by connecting a resistor between the RT pin and AGND and floating the SYNC pin. The switching frequency is approximated by the following equation, where R is the resistance from RT to AGND: Switching Frequency + 100 kW 500 [kHz] R (4) Second, as the output becomes active, a brief ramp-up at the internal slow-start rate may be observed before the externally set slow-start rate takes control and the output rises at a rate proportional to the slow-start capacitor. The slow-start time set by the capacitor is approximately: 0.7 V t +C (SS) (SS) 5 mA (3) External synchronization of the PWM ramp is possible over the frequency range of 330 kHz to 700 kHz by driving a synchronization signal into SYNC and connecting a resistor from RT to AGND. Choose a resistor between the RT and AGND, which sets the free running frequency to 80% of the synchronization signal. The following table summarizes the frequency selection configurations: The actual slow-start time is likely to be less than the above approximation due to the brief ramp-up at the internal rate. Submit Documentation Feedback 15 TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 SWITCHING FREQUENCY SYNC PIN RT PIN 350 kHz, internally set Float or AGND Float 550 kHz, internally set ≥ 2.5 V Float Externally set 280 kHz to 700 kHz Float R = 180 kΩ to 68 kΩ Externally synchronized frequency Synchronization signal R = RT value for 80% of external synchronization frequency ERROR AMPLIFIER The high-performance, wide-bandwidth, voltage-error amplifier sets the TPS54610 apart from most dc/dc converters. The user is given the flexibility to use a wide range of output L and C filter components to suit the particular application needs. Type 2 or type 3 compensation can be employed using external compensation components. PWM CONTROL Signals from the error amplifier output, oscillator, and current limit circuit are processed by the PWM control logic. Referring to the internal block diagram, the control logic includes the PWM comparator, OR gate, PWM latch, and portions of the adaptive dead-time and control logic block. During steady-state operation below the current limit threshold, the PWM comparator output and oscillator pulse train alternately reset and set the PWM latch. Once the PWM latch is reset, the low-side FET remains on for a minimum duration set by the oscillator pulse width. During this period, the PWM ramp discharges rapidly to its valley voltage. When the ramp begins to charge back up, the low-side FET turns off and high-side FET turns on. As the PWM ramp voltage exceeds the error amplifier output voltage, the PWM comparator resets the latch, thus turning off the high-side FET and turning on the low-side FET. The low-side FET remains on until the next oscillator pulse discharges the PWM ramp. During transient conditions, the error amplifier output could be below the PWM ramp valley voltage or above the PWM peak voltage. If the error amplifier is high, the PWM latch is never reset, and the high-side FET remains on until the oscillator pulse signals the control logic to turn the high-side FET off and the low-side FET on. The device operates at its maximum duty cycle until the output voltage rises to the regulation set-point, setting VSENSE to approximately the same voltage as VREF. If the error amplifier output is low, the PWM latch is continually reset and the high-side FET does not turn 16 on. The low-side FET remains on until the VSENSE voltage decreases to a range that allows the PWM comparator to change states. The TPS54610 is capable of sinking current continuously until the output reaches the regulation set-point. If the current limit comparator trips for longer than 100 ns, the PWM latch resets before the PWM ramp exceeds the error amplifier output. The high-side FET turns off and low-side FET turns on to decrease the energy in the output inductor and consequently the output current. This process is repeated each cycle in which the current limit comparator is tripped. DEAD-TIME CONTROL AND MOSFET DRIVERS Adaptive dead-time control prevents shoot-through current from flowing in both N-channel power MOSFETs during the switching transitions by actively controlling the turnon times of the MOSFET drivers. The high-side driver does not turn on until the voltage at the gate of the low-side FET is below 2 V. While the low-side driver does not turn on until the voltage at the gate of the high-side MOSFET is below 2 V. The high-side and low-side drivers are designed with 300-mA source and sink capability to quickly drive the power MOSFETs gates. The low-side driver is supplied from VIN, while the high-side drive is supplied from the BOOT pin. A bootstrap circuit uses an external BOOT capacitor and an internal 2.5-Ω bootstrap switch connected between the VIN and BOOT pins. The integrated bootstrap switch improves drive efficiency and reduces external component count. OVERCURRENT PROTECTION The cycle-by-cycle current limiting is achieved by sensing the current flowing through the high-side MOSFET and comparing this signal to a preset overcurrent threshold. The high side MOSFET is turned off within 200 ns of reaching the current limit threshold. A 100-ns leading edge blanking circuit prevents current limit false tripping. Current limit detection occurs only when current flows from VIN to PH when sourcing current to the output filter. Load protection during current sink operation is provided by thermal shutdown. Submit Documentation Feedback TPS54610-Q1 www.ti.com SLVS726 – JANUARY 2007 THERMAL SHUTDOWN POWER GOOD (PWRGD) The device uses the thermal shutdown to turn off the power MOSFETs and disable the controller if the junction temperature exceeds 150°C. The device is released from shutdown automatically when the junction temperature decreases to 10°C below the thermal shutdown trip point, and starts up under control of the slow-start circuit. The power-good circuit monitors for under-voltage conditions on VSENSE. If the voltage on VSENSE is 10% below the reference voltage, the open-drain PWRGD output is pulled low. PWRGD is also pulled low if VIN is less than the UVLO threshold or SS/ENA is low, or a thermal shutdown occurs. When VIN≥ UVLO threshold, SS/ENA ≥ enable threshold, and VSENSE > 90% of Vref, the open-drain output of the PWRGD pin is high. A hysteresis voltage equal to 3% of Vref and a 35 µs falling edge deglitch circuit prevent-tripping of the power-good comparator due to high-frequency noise. Thermal shutdown provides protection when an overload condition is sustained for several milliseconds. With a persistent fault condition, the device cycles continuously; starting up by control of the soft-start circuit, heating up due to the fault condition, and then shutting down upon reaching the thermal shutdown trip point. This sequence repeats until the fault condition is removed. Submit Documentation Feedback 17 PACKAGE OPTION ADDENDUM www.ti.com 10-Jan-2012 PACKAGING INFORMATION Orderable Device TPS54610QPWPRG4Q1 Status (1) ACTIVE Package Type Package Drawing HTSSOP PWP Pins Package Qty 28 2000 Eco Plan (2) Green (RoHS & no Sb/Br) Lead/ Ball Finish MSL Peak Temp (3) Samples (Requires Login) CU NIPDAU Level-2-260C-1 YEAR (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. 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