TS271C,I,M CMOS PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIER ■ OFFSET NULL CAPABILITY (by external compensation) ■ DYNAMIC CHARACTERISTICS ADJUSTABLE ISET ■ CONSUMPTION CURRENT AND DYNAMIC ■ ■ ■ ■ PARAMETERS ARE STABLE REGARDING THE VOLTAGE POWER SUPPLY VARIATIONS OUTPUT VOLTAGE CAN SWING TO GROUND VERY LARGE ISET RANGE STABLE AND LOW OFFSET VOLTAGE THREE INPUT OFFSET VOLTAGE SELECTIONS N DIP8 (Plastic Package) DESCRIPTION The TS271 is a low cost, low power single opertional amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption applications. The power supply is externally programmable with a resistor connected between pins 8 and 4. It allows to choose the best consumption-speed ratio and supply current can be minimized according to the required speed. This device is specified for the following ISET current values : 1.5µA, 25µA, 130µA. This CMOS amplifier offers very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see figure 3). D SO8 (Plastic Micropackage) PIN CONNECTIONS (top view) 1 8 2 - 7 3 + 6 4 5 ORDER CODE Package Part Number Temperature Range TS271C/AC/BC 0°C, +70°C TS271I/AI/BI -40°C, +125°C TS271M/AM/BM -55°C, +125°C Example : TS271ACN N D • • • • • • N = Dual in Line Package (DIP) D = Small Outline Package (SO) - also available in Tape & Reel (DT) November 2001 1 - Offset Null 1 2 - Inverting Input 1 3 - Non-inverting Input 1 4 - V CC 5 - Offset Null 2 6 - Output 7-V + CC 8 - I Set 1/15 TS271C,I,M BLOCK DIAGRAM VCC Current source xI Input differential Output stage Second stage Output VCC E E ABSOLUTE MAXIMUM RATINGS Symbol VCC + Vid Parameter Supply Voltage TS271C/AC/BC 1) 2) TS271I/AI/BI TS271M/AM/BM Unit 18 V ±18 V -0.3 to 18 V Output Current for VCC+ ≥ 15V ±30 mA Input Current ±5 mA Differential Input Voltage Vi Input Voltage Io Iin 3) Toper Operating Free-Air Temperature Range Tstg Storage Temperature Range 0 to +70 -40 to +125 -55 to +125 -65 to +150 °C °C 1. All values, except differential voltage are with respect to network ground terminal. 2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage. OPERATING CONDITIONS Symbol Parameter VCC+ Supply Voltage Vicm Common Mode Input Voltage Range 2/15 Value Unit 3 to 16 V 0 to VCC+ - 1.5 V T20 T19 T17 T24 T21 T 18 R2 T 25 VCC T 22 T 23 T 26 T29 T 28 T27 Input T3 T1 T5 VCC T4 T2 C1 Input R1 T7 T6 T9 T8 T 13 T11 T 10 T 14 T 12 T16 Output T 15 TS271C,I,M SCHEMATIC DIAGRAM 3/15 TS271C,I,M OFFSET VOLTAGE NULL CIRCUIT RESISTOR BIASING VCC+ VCC+ 5 + 1 - 8 VO - VCC 25kΩ VO + R set + R set R set VCC- VCC- R set CONNECTED TO GROUND R set CONNECTED TO VCC- (R set VALUE : SEE Fig. 1) OFFSET COMPENSATION GUARANTEED FOR TS271BCX (ISET > 25µA), TS271ACX (ISET > 90µA) Figure 1 : RSET Connected to VCC- VCC = +3V VCC = +16V VCC = +5V VCC = +10V Rset 10MΩ 1MΩ 100kΩ 10kΩ 0.1µA 4/15 1µA 10µA 100µA Iset TS271C,I,M ELECTRICAL CHARACTERISTICS for ISET = 1.5µA VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified) TS271C/AC/BC Symbol Parameter Min. Input Offset Voltage VO = 1.4V, Vic = 0V Vio DVio Iio Iib Input Offset Voltage Drift Input Offset Current note Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax Max. 1.1 0.9 0.25 10 5 2 12 6.5 3 Min. Typ. 1.1 0.9 0.25 2 Unit Max. 10 5 2 12 6.5 3.5 2 mV µV/°C 1) 1 High Level Output Voltage Vid = 100mV, RL = 1MΩ Tmin ≤ Tamb ≤ Tmax VOL Low Level Output Voltage Vid = -100mV Avd Large Signal Voltage Gain ViC = 5V, RL = 1MΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax 1 100 Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax VOH 1 1 150 8.8 8.7 9 8.8 8.6 100 9 30 20 100 CMR Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V 60 80 60 80 SVR Supply Voltage Rejection Ratio VCC+ = 5V to 10V, Vo = 1.4V 60 80 60 80 0.1 10 V 50 Gain Bandwidth Product Av = 40dB, RL = 1MΩ, CL = 100pF, fin = 100kHz Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax pA 300 50 30 20 pA 200 GBP ICC V/mV MHz 0.1 15 17 10 mV dB dB 15 18 µA Io Output Short Circuit Current Vo = 0V, Vid = 100mV 60 60 Isink Output Sink Current Vo = VCC, Vid = -100mV 45 45 SR Slew Rate at Unity Gain RL = 1MΩ, CL = 100pF, Vi = 3 to 7V 0.04 0.04 φm Phase Margin at Unity Gain Av = 40dB, RL = 1MΩ CL = 10pF CL = 100pF 35 10 35 10 Degrees KOV Overshoot Factor Av = 40dB, RL = 1MΩ CL = 10pF CL = 100pF 40 70 40 70 % Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω 30 30 en 1. Tmin ≤ Tamb ≤ Tmax TS271C/I/M TS271AC/AI/AM TS271B/C/I/M TS271C/I/M TS271AC/AI/AM TS271B/C/I/M Typ. TS271I/AI/BI TS271M/AM/BM mA mA V/µs nV -----------Hz Maximum values including unavoidable inaccuracies of the industrial test. 5/15 TS271C,I,M TYPICAL CHARACTERISTICS for ISET = 1.5µA Figure 2 : Supply Current versus Supply Voltage Figure 4b : High Level Output Voltage versus High Level Output Current 20 Tamb = 25°C AV = 1 VO = VCC / 2 15 OUTPUT VOLTAGE, VOH (V) SUPPLY CURRENT, ICC (µ A) 20 10 5 0 4 8 12 Tamb = 25 ° C 16 VCC = 16V 12 8 SUPPLY VOLTAGE, VCC (V) O U T P U T V O L T A G E , VOL(V ) INPUT BIAS CURRENT, IIB (pA) VCC = 10V V i = 5V 10 50 75 100 125 Figure 4 : High Level Output Voltage versus High Level Output Current 0 .8 Tamb = 25 ° C V id = 100mV VCC= 5V 2 VCC = 3V 1 0 -10 -8 -6 -4 -2 OUTPUT CURRENT, I OH (mA) 6/15 -10 0 0 VC C = 3 V 0 .6 V CC = 5V 0 .4 T amb = 2 5 °C V ic = 0 .5 V V id = -1 0 0 m V 0 .2 0 1 2 O U T P U T C U R R E N T , I OL (m A ) 3 Figure 5b : Low Level Output Voltage versus Low Level Output Current O U T P U T V O L T A G E , V OL (V ) OUTPUT VOLTAGE, VOH (V) 5 3 -20 1 .0 TEMPERATURE, T amb ( °C) 4 -30 Figure 5a : Low Level Output Voltage versus Low Level Output Current 100 25 -40 OUTPUT CURRENT, I OH (mA) Figure 3 : Input Bias Current versus Free Air Temperature 1 VCC = 10V 4 0 -50 16 V id = 100mV 3 V C C = 10V VC C = 1 6 V 2 1 Tamb = 2 5 °C V i = 0 .5 V V = -1 0 0 m V id 0 4 8 12 16 O U T P U T C U R R E N T , I OL (m A ) 20 TS271C,I,M 40 G A IN 0 G A IN (d B ) 30 45 PHASE 20 T a m b = 2 5 °C V C C+ = 1 0 V R L = 1M Ω C L = 100pF A VC L = 100 10 0 -1 0 10 2 10 3 Phase Margin 4 135 180 Gain Bandwidth Product 10 90 10 5 10 P H A S E (D e g re e s ) 50 6 Figure 9 : Phase Margin versus Capacitive Load P H A S E M A R G IN , φ m (D e g re e s ) Figure 6 : Open Loop Frequency Response and Phase Shift 40 Ta m b = 2 5 °C RL = 1M Ω AV = 1 VC C = 10V 30 20 10 0 F R E Q U E N C Y , f (H z ) 20 40 60 C A P A C IT A N C E , C L 100 (p F ) Figure 10 : Slew Rate versus Supply Voltage 0.07 Ta m b = 2 5 °C RL = 1MΩ CL = 1 0 0 p F AV = 1 100 80 60 0.06 0.05 0.04 0.03 0.02 0.01 4 40 4 0 8 12 16 S U P P L Y V O L T A G E , V C C (V ) SR , 120 S L E W R A T E S S R (V / µs ) G A IN B A N D W . P R O D ., G B P (M H z ) Figure 7 : Gain Bandwidth Product versus Supply Voltage 80 SR Ta m b = 2 5 °C R L = 1MΩ CL = 1 0 0 p F 6 8 10 12 S U P P L Y V O L T A G E , VC C 14 (V ) 16 P H A S E M A R G IN , φ m (D e g re e s ) Figure 8 : Phase Margin versus Supply Voltage 10 8 6 4 2 0 Ta m b = 2 5 °C R L = 1MΩ CL = 1 0 0 p F AV = 1 4 8 12 16 S U P P L Y V O L T A G E , V C C (V ) 7/15 TS271C,I,M ELECTRICAL CHARACTERISTICS for ISET = 25µA VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified) TS271C/AC/BC Symbol Parameter Min. Input Offset Voltage VO = 1.4V, Vic = 0V Vio DVio Iio Iib Tmin ≤ Tamb ≤ Tmax TS271C/I/M TS271AC/AI/AM TS271C/I/M TS271B/C/I/M TS271AC/AI/AM TS271B/C/I/M Input Offset Voltage Drift Input Offset Current note Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax Typ. Max. 1.1 0.9 0.25 10 5 2 12 6.5 3 TS271I/AI/BI TS271M/AM/BM Min. Typ. 1.1 0.9 0.25 2 10 5 2 12 6.5 3.5 2 mV µV/°C 1) 1 High Level Output Voltage Vid = 100mV, RL = 100kΩ Tmin ≤ Tamb ≤ Tmax VOL Low Level Output Voltage Vid = -100mV Avd Large Signal Voltage Gain ViC = 5V, RL = 100kΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax 1 100 Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax VOH 1 1 150 8.7 8.6 8.9 8.7 8.5 50 8.9 30 10 50 CMR Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V 60 80 60 80 SVR Supply Voltage Rejection Ratio VCC+ = 5V to 10V, Vo = 1.4V 60 80 60 80 0.7 150 V 50 Gain Bandwidth Product Av = 40dB, RL = 100kΩ, CL = 100pF, fin = 100kHz Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax pA 300 50 30 20 pA 200 GBP ICC Unit Max. V/mV MHz 0.7 200 250 150 mV dB dB 200 300 µA Io Output Short Circuit Current Vo = 0V, Vid = 100mV 60 60 Isink Output Sink Current Vo = VCC, Vid = -100mV 45 45 SR Slew Rate at Unity Gain RL = 100kΩ, CL = 100pF, Vi = 3 to 7V 0.6 0.6 φm Phase Margin at Unity Gain Av = 40dB, RL = 100kΩ CL = 10pF CL = 100pF 50 30 50 30 Degrees KOV Overshoot Factor Av = 40dB, RL = 100kΩ CL = 10pF CL = 100pF 30 50 30 50 % Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω 38 38 en 1. 8/15 Maximum values including unavoidable inaccuracies of the industrial test. mA mA V/µs nV -----------Hz TS271C,I,M TYPICAL CHARACTERISTICS for ISET = 25µA Figure 13b : High Level Output Voltage versus High Level Output Current Figure 11 : Supply Current versus Supply Voltage 20 OUTPUT VOLTAGE, VOH (V) SUPPLY CURRENT, ICC (µ A) 200 150 100 Tamb = 25°C AV = 1 VO = VCC / 2 50 0 4 8 12 Tamb = 25 ° C 16 VCC = 16V 12 8 SUPPLY VOLTAGE, VCC (V) O U T P U T V O L T A G E , VOL(V ) INPUT BIAS CURRENT, IIB (pA) VCC = 10V V i = 5V 10 50 75 100 0 .8 Tamb = 25 ° C V id = 100mV VCC= 5V 2 0 -10 VCC = 3V -8 -6 -4 -2 OUTPUT CURRENT, I OH (mA) 0 0 V CC = 5V 0 .4 T amb = 2 5 °C V ic = 0 .5 V V id = -1 0 0 m V 0 .2 1 2 O U T P U T C U R R E N T , I OL (m A ) 3 Figure 14b : Low Level Output Voltage versus Low Level Output Current O U T P U T V O L T A G E , V OL (V ) OUTPUT VOLTAGE, VOH (V) 5 1 -10 VC C = 3 V 0 .6 0 125 Figure 13a : High Level Output Voltage versus High Level Output Current 3 -20 1 .0 TEMPERATURE, T amb ( °C) 4 -30 Figure 14a : Low Level Output Voltage versus Low Level Output Current 100 25 -40 OUTPUT CURRENT, I OH (mA) Figure 12 : Input Bias Current versus Free Air Temperature 1 VCC = 10V 4 0 -50 16 V id = 100mV 3 V C C = 10V VC C = 1 6 V 2 1 Tamb = 2 5 °C V i = 0 .5 V V = -1 0 0 m V id 0 4 8 12 16 20 O U T P U T C U R R E N T , I OL (m A ) 9/15 TS271C,I,M 40 0 G A IN G A IN (d B ) 30 45 PHASE 20 Phase Margin T a m b = 2 5 °C V C C+ = 1 0 V R L = 100kΩ C L = 100pF A VC L = 100 10 0 135 2 10 3 180 Gain Bandwidth Product -1 0 10 90 10 4 10 5 10 6 10 P H A S E (D e g re e s ) 50 7 Figure 18 : Phase Margin versus Capacitive Load P H A S E M A R G IN , φ m (D e g re e s ) Figure 15 : Open Loop Frequency Response and Phase Shift 50 Ta m b = 2 5 °C RL = 100kΩ AV = 1 VC C = 10V 40 30 20 0 F R E Q U E N C Y , f (H z ) 20 40 60 C A P A C IT A N C E , C S L E W R A T E S , S R (V / µs ) G A IN B A N D W . P R O D ., G B P (M H z ) Ta m b = 2 5 °C RL = 100kΩ CL = 1 0 0 p F AV = 1 0.8 0.7 0.6 0.5 4 0 8 12 16 S U P P L Y V O L T A G E , V C C (V ) P H A S E M A R G IN , φ m (D e g re e s ) Figure 17 : Phase Margin versus Supply Voltage 50 40 30 Ta m b = 2 5 °C R L = 100kΩ CL = 1 0 0 p F AV = 1 4 8 12 S U P P L Y V O L T A G E , V C C (V ) 10/15 16 SR 0.8 SR 0.6 0.4 Ta m b = 2 5 °C R L = 100kΩ CL = 1 0 0 p F 0.2 0 0.4 0 (p F ) 1.0 0.9 10 L 100 Figure 19 : Slew Rate versus Supply Voltage Figure 16 : Gain Bandwidth Product versus Supply Voltage 20 80 4 6 8 10 12 S U P P L Y V O L T A G E , VC C 14 (V ) 16 TS271C,I,M ELECTRICAL CHARACTERISTICS for ISET = 130µA VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified) TS271C/AC/BC Symbol Parameter Min. Input Offset Voltage VO = 1.4V, Vic = 0V Vio DVio Iio Iib Input Offset Voltage Drift Input Offset Current note Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax Max. 1.1 0.9 0.25 10 5 2 12 6.5 3 Min. Typ. 1.1 0.9 0.25 2 Unit Max. 10 5 2 12 6.5 3.5 2 mV µV/°C 1) 1 High Level Output Voltage Vid = 100mV, RL = 10kΩ Tmin ≤ Tamb ≤ Tmax VOL Low Level Output Voltage Vid = -100mV Avd Large Signal Voltage Gain ViC = 5V, RL = 10kΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax 1 100 Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax VOH 1 1 150 8.2 8.1 8.4 8.2 8 15 8.4 10 6 15 CMR Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V 60 80 60 80 SVR Supply Voltage Rejection Ratio VCC+ = 5V to 10V, Vo = 1.4V 60 70 60 70 2.3 800 V 50 Gain Bandwidth Product Av = 40dB, RL = 10kΩ, CL = 100pF, fin = 100kHz Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax pA 300 50 10 7 pA 200 GBP ICC V/mV MHz 2.3 1300 1400 800 mV dB dB 1300 1500 µA Io Output Short Circuit Current Vo = 0V, Vid = 100mV 60 60 Isink Output Sink Current Vo = VCC, Vid = -100mV 45 45 SR Slew Rate at Unity Gain RL = 10kΩ, CL = 100pF, Vi = 3 to 7V 4.5 4.5 φm Phase Margin at Unity Gain Av = 40dB, RL = 10kΩ CL = 10pF CL = 100pF 65 30 65 30 Degrees KOV Overshoot Factor Av = 40dB, RL = 10kΩ CL = 10pF CL = 100pF 30 50 30 50 % Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω 30 30 en 1. Tmin ≤ Tamb ≤ Tmax TS271C/I/M TS271AC/AI/AM TS271B/C/I/M TS271C/I/M TS271AC/AI/AM TS271B/C/I/M Typ. TS271I/AI/BI TS271M/AM/BM mA mA V/µs nV -----------Hz Maximum values including unavoidable inaccuracies of the industrial test. 11/15 TS271C,I,M TYPICAL CHARACTERISTICS for ISET = 130µA Figure 20 : Supply Current (each amplifier) versus Supply Voltage Figure 22b : High Level Output Voltage versus High Level Output Current 20 OUTPUT VOLTAGE, VOH (V) SUPPLY CURRENT, ICC (mA) 1.0 0.8 0.6 0.4 Tamb = 25°C AV = 1 VO = VCC / 2 0.2 0 8 4 12 Tamb = 25 ° C 16 VCC = 16V 12 8 SUPPLY VOLTAGE, VCC (V) O U T P U T V O L T A G E , VOL(V ) INPUT BIAS CURRENT, IIB (pA) VCC = 10V V i = 5V 10 50 75 100 0 .8 Tamb = 25 ° C V id = 100mV VCC= 5V 2 0 -10 VCC = 3V -8 -6 -4 -2 OUTPUT CURRENT, I OH (mA) 12/15 0 0 V CC = 5V 0 .4 T amb = 2 5 °C V ic = 0 .5 V V id = -1 0 0 m V 0 .2 1 2 O U T P U T C U R R E N T , I OL (m A ) 3 Figure 23b : Low Level Output Voltage versus Low Level Output Current O U T P U T V O L T A G E , V OL (V ) OUTPUT VOLTAGE, VOH (V) 5 1 -10 VC C = 3 V 0 .6 0 125 Figure 22a : High Level Output Voltage versus High Level Output Current 3 -20 1 .0 TEMPERATURE, T amb ( °C) 4 -30 Figure 23a : Low Level Output Voltage versus Low Level Output Current 100 25 -40 OUTPUT CURRENT, I OH (mA) Figure 21 : Input Bias Current versus Free Air Temperature 1 VCC = 10V 4 0 -50 16 V id = 100mV 3 V C C = 10V VC C = 1 6 V 2 1 Tamb = 2 5 °C V i = 0 .5 V V = -1 0 0 m V id 0 4 8 12 16 O U T P U T C U R R E N T , I OL (m A ) 20 TS271C,I,M 40 0 G A IN G A IN (d B ) 30 45 PHASE 20 Phase Margin T a m b = 2 5 °C V C C+ = 1 0 V R L = 10kΩ C L = 100pF A VC L = 100 10 0 135 2 10 3 180 Gain Bandwidth Product -1 0 10 90 10 4 10 5 10 6 10 P H A S E (D e g re e s ) 50 7 Figure 27 : Phase Margin versus Capacitive Load P H A S E M A R G IN , φ m (D e g re e s ) Figure 24 : Open Loop Frequency Response and Phase Shift 70 Ta m b = 2 5 °C RL = 10kΩ AV = 1 VC C = 10V 60 50 40 30 0 F R E Q U E N C Y , f (H z ) 20 40 60 C A P A C IT A N C E , C S L E W R A T E S , S R (V / µs ) G A IN B A N D W . P R O D ., G B P (M H z ) Ta m b = 2 5 °C RL = 10kΩ CL = 1 0 0 p F AV = 1 2 1 SR 4 4 8 12 16 S U P P L Y V O L T A G E , V C C (V ) SR 3 2 Ta m b = 2 5 °C R L = 10kΩ CL = 1 0 0 p F 1 0 0 (p F ) 5 5 3 L 100 Figure 28 : Slew Rate versus Supply Voltage Figure 25 : Gain Bandwidth Product versus Supply Voltage 4 80 4 6 8 10 12 S U P P L Y V O L T A G E , VC C 14 (V ) 16 P H A S E M A R G IN , φ m (D e g re e s ) Figure 26 : Phase Margin versus Supply Voltage 50 40 30 20 10 0 Ta m b = 2 5 °C R L = 10kΩ CL = 1 0 0 p F AV = 1 4 8 12 16 S U P P L Y V O L T A G E , V C C (V ) 13/15 TS271C,I,M PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP Millimeters Inches Dimensions Min. A a1 B b b1 D E e e3 e4 F i L Z 14/15 Typ. Max. Min. 3.32 0.51 1.15 0.356 0.204 1.65 0.55 0.304 10.92 9.75 7.95 0.020 0.045 0.014 0.008 Max. 0.065 0.022 0.012 0.430 0.384 0.313 2.54 7.62 7.62 3.18 Typ. 0.131 0.100 0.300 0.300 6.6 5.08 3.81 1.52 0.125 0260 0.200 0.150 0.060 TS271C,I,M PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) s b1 b a1 A a2 C c1 a3 L E e3 D M 5 1 4 F 8 Millimeters Inches Dimensions Min. A a1 a2 a3 b b1 C c1 D E e e3 F L M S Typ. Max. 0.65 0.35 0.19 0.25 1.75 0.25 1.65 0.85 0.48 0.25 0.5 4.8 5.8 5.0 6.2 0.1 Min. Typ. Max. 0.026 0.014 0.007 0.010 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.189 0.228 0.197 0.244 0.004 45° (typ.) 1.27 3.81 3.8 0.4 0.050 0.150 4.0 1.27 0.6 0.150 0.016 0.157 0.050 0.024 8° (max.) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States © http://www.st.com 15/15