TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per JESD 22-B102 Polarity: As marked Mounting torque: 5 in-lbs. max. Weight: 1.7 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current per diode SYMBOL TSF2080C UNIT VRRM 80 V 20 IF(AV) A 10 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 100 A Peak repetitive reverse surge current (Note 1) IRRM 0.5 A Non-repetitive avalanche energy at L=60mH, per diode EAS 110 mJ dV/dt 10000 V/μs VAC 1500 V Voltage rate of change (Rated VR) Isolation voltage from terminal to heatsink t = 1 min Breakdown voltage ( IR =1.0mA ) VBR IF = 5A Instantaneous forward voltage per diode ( Note2 ) IF = 10A IF = 5A IF = 10A Instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C Typical thermal resistance (Note 3) Operating junction temperature range Storage temperature range VF VF IR MIN. TYP. MAX. 80 - - - 0.52 - - 0.67 0.77 - 0.48 - - 0.62 0.70 - 20 600 - 10 20 V V μA mA O RθJC 5 TJ - 55 to + 150 O C - 55 to + 150 O C TSTG C/W Note 1: 2.0μs Pulse width, f=1.0KHz Note 2: Pulse test with pulse width=300μs, 1% duty cycle Note 3: Mount on heatsink size of 4in x 6in x 0.25in Al-plate Document Number: DS_D1309047 Version:B13 TSF2080C Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE PACKAGE PACKING TSF2080C C0 ITO-220AB 50 / Tube PREFERRED P/N PART NO. PACKING CODE DESCRIPTION TSF2080C C0 TSF2080C C0 EXAMPLE RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG. 2 TYPICAL FORWARD CHARACTERISTICS FIG.1 FORWARD CURRENT DERATING CURVE 100 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) 30 25 20 15 10 WITH HEATSINK 4in x 6in x 0.25in Al-Plate 5 0 10 TJ=125oC TJ=25oC 1 TJ=100oC 0.1 0.01 0 25 50 75 100 CASE TEMPERATURE 125 150 0 (oC) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 FORWARD VOLTAGE (V) FIG. 4 TYPICAL JUNCTION CAPACITANCE FIG. 3 TYPICAL REVERSE CHARACTERISTICS 10000 100 =150oC TJ 10 TJ=125oC 1 CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150oC TJ=100oC 0.1 1000 100 0.01 f=1.0MHz Vsig=50mVp-p TJ=25oC 10 0.001 10 20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) Document Number: DS_D1309047 100 0.1 1 10 100 REVERSE VOLTAGE (V) Version:B13 TSF2080C Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit(mm) Unit(inch) Min Max Min Max A 4.30 4.70 0.169 0.185 B 2.50 3.16 0.098 0.124 C 2.30 2.96 0.091 0.117 D 0.46 0.76 0.018 0.030 E 6.30 6.90 0.248 0.272 F 9.60 10.30 0.378 0.406 G 3.00 3.40 0.118 0.134 H I 0.95 0.50 1.45 0.90 0.037 0.020 0.057 0.035 J 2.40 3.20 0.094 0.126 K 14.80 15.50 0.583 0.610 L - 4.10 - 0.161 M 12.60 13.80 0.496 0.543 N - 1.80 - 0.071 O 2.41 2.67 0.095 0.105 MARKING DIAGRAM P/N = Specific Device Code YWW = Date Code F = Factory Code Document Number: DS_D1309047 Version:B13