SiBar Thyristor SiBar Thyristor Surge Protectors Raychem Circuit Protection’s SiBar thyristor surge protection devices are designed to help protect sensitive telecommunication equipment from the hazards caused by lightning, power contact, and power induction. These devices have a high electrical surge capability to help protect against transient faults and a high off-state impedance, rendering them virtually transparent during normal system operation. SiBar thyristor surge protectors are designed to assist telecommunication and computer telephony equipment in meeting the applicable requirements and industry specifications. 4 Benefits: Features: Applications: • Helps provide protection for sensitive telecom electronic equipment • Low leakage current • Low power dissipation • Fast, reliable operation • No wear-out mechanisms • Helps designers meet worldwide telecom standards • Helps reduce warranty and service costs • Easy installation • Helps improve power efficiency of equipment • Bidirectional transient voltage protection • High off-state impedance • Low on-state voltage • High surge capability • Short-circuit failure mode • Surface-mount technology • Lead-free leads available on all parts • • • • • • • Modems Fax machines PBX systems Phones POS systems Analog and digital linecards Other customer premise and network equipment requiring protection Devices in this section are grouped by: Surge Capability, Maximum Off-State Voltage, Package Size Raychem Circuit Protection SiBar Thyristor Surge Protectors 339 Selection Guide for SiBar Thyristor Surge Protectors Step 1. Determine the circuit’s operating parameters. Fill in the following information about the circuit: Maximum ambient operating temperature ______________________ Maximum DC supply voltage (VDC Max..) ________________________ Maximum ringing (AC) voltage (VAC Max.) ______________________ System voltage damage threshold __________________________ Maximum fault current and duration __________________________ Maximum system operating current __________________________ Applicable industry requirements __________________________ Step 2. Calculate the maximum operating voltage of your system. Maximum operating voltage = VDC Max. + (1.414 x VAC Max.) 4 Refer to Table V1 to select a SiBar thyristor device with a maximum offstate voltage (VDM) rating that is close to, but greater than, the maximum operating voltage of your system. Step 3. Verify that the system voltage damage threshold is greater than the rated maximum breakover voltage (VBO). Refer to Table V1 to confirm that the maximum breakover voltage of the device you selected in Step 2 is less than the system voltage damage threshold. 340 SiBar Thyristor Surge Protectors Raychem Circuit Protection SiBar Thyristor Selection Guide for SiBar Thyristor Surge Protectors continued Step 4. Verify that the maximum fault current of the system and its duration or the fault current defined in the industry specification(s) are less than the surge current rating of the device selected. For help in determining which industry specifications may apply, refer to the Protection Application Guide on the next page. Refer to Table V2 for SiBar thyristor surge current ratings applicable to TIA 968-A (FCC Part 68), Telcordia GR-1089, ITU K.20, K.21, K.45 industry specifications. Step 5. Verify that the maximum system operating current is less than the minimum hold current rating (IH) in Table V1 for the device selected. Using Figure V4, verify that IH is greater than the maximum system operating current over the entire ambient operating temperature range. (As with IH, VDM and VBO also vary with ambient temperature, to a lesser degree. Figures V2 and V3 can be used to determine that the device selected continues to meet your requirements over the ambient operating temperature range.) 4 Step 6. Verify that the dimensions in Table V4 for the SiBar thyristor device are compatible witht the application’s space requirements. Raychem Circuit Protection SiBar Thyristor Surge Protectors 341 Protection Application Guide for SiBar Thyristor Surge Protectors To use this guide, follow the steps below: 1. Select your equipment type from the guide below. 2. Select the type of protection depending on the agency and regional specifications in the second column. PolySwitch Resettable Devices Application Customer premises equipment, IT equipment Analog modems, V.90 modems, ISDN modems, xDSL modems, ADSL splitters, phone sets, fax machines, answering machines, caller ID, internet appliances, PBX systems, POS terminals, wall plugs 4 Region/ Specification SiBar Thyristor Surge Protectors1 North America TVBxxxSA(-L) or TIA-968-A (FCC Part 68), TVAxxxSA(-L) with UL 1950, TR/TS; TVBxxxSC(-L) UL 1459 with TS/TR or fuse Europe/Asia/ TVBxxxSA(-L) South America TVAxxxSA(-L) ITU K.21 Key Device Selection Citeria Small Footprint Low Resistance Fast Time-to-Trip TR600-150 TS600-170 TR600-150-RA TS600-200-RA TR600-150-RB TS600-170 TR250-120 TR250-145 TS250-130 TSV250-130 TR250-180U TS250-130-RA TSV250-130 TR250-120T-R2 TS250-130-RB Access network equipment (*) Remote terminals, line repeaters, multiplexers, cross-connects, WAN equipment North America Telcordia GR-1089 TVBxxxSC(-L) TR600-150-RA TS600-200-RA TR600-160-RA TS600-200-RA TR600-150-RB TS600-170 Europe/Asia/ South America ITU K.45 TVBxxxSA(-L) TVAxxxSA(-L) TR250-120 TR250-145 TS250-130 TSV250-130 TR250-180U TS250-130-RA TSV250-130 TR250-120T-R2 TS250-130-RB Central office switching equipment (*) Analog/POTS linecards, ISDN linecards, xDSL modems, ADSL/VDSL splitters, T1/E1 linecards, multiplexers, CSU/DSU, servers North America Telcordia GR-1089 TVBxxxSC(-L) TR600-150-RA TS600-200-RA TR600-160-RA TS600-200-RA TR600-150-RB TS600-170 Europe/Asia/ South America ITU K.20 TVBxxxSA(-L) TVAxxxSA(-L) TR250-120 TR250-145 TS250-130 TSV250-130 TR250-180U TS250-130-RA TSV250-130 TR250-120T-R2 TS250-130-RB Primary protection modules (*) MDF modules, Network Interface Devices (NID) North America Telcordia GR-974 N/A TR250-180U TR250-180U TR250-180U Europe/Asia/ South America ITU K.20 N/A TGC250-120T TR250-120T TS250-130 TSV250-130 TC250-145T TR250-145-RA TS250-130-RA TSV250-130 TGC250-120T TR250-120T-R2 TS250-130-RB North America Telcordia GR-1089 intrabuilding TVBxxxSA(-L) TVAxxxSA(-L) TR250-145 TR250-180U TS250-130-RA TSV250-130 TR250-120T-R2 TSL250-080 Europe/Asia/ South America ITU K.21 TVBxxxSA(-L) TVAxxxSA(-L) TSL250-080 TR250-120 TS250-130 TSV250-130 TR250-120 TR250-145 TS250-130 TSV250-130 TR250-180U TS250-130-RA TSV250-130 TR250-120T-R2 TS250-130-RB Short-haul/intrabuilding communications equipment (*) LAN equipment, VoIP cards, cable telephony NIU’s, wireless local loop handsets LAN intrabuilding power cross protection LAN equipment, VoIP cards, IP phones TVBxxxSA(-L) TVAxxxSA(-L) TSL250-080 TSL250-080 TSL250-080 TVAxxxSA IEEE 802.3 Power over LAN protection Powered ethernet switches and terminals, IP phones, wireless LAN base stations, microcellular base stations, VoIP cards N/A miniSMDC014 SMD030 SMD030-2018 SMD030-2018 Cable telephony powering systems Power passing taps N/A BBR550 BBR750 BBR550 Notes: This list is not exhaustive. Raychem Circuit Protection welcomes our customers’ input for additional application ideas. 1 For more information on Raychem Circuit Protection PolySwitch resettable devices, refer to telecommunication and networking devices on page 301. * For improved line balance in these applications, resistance-matched parts are recommended. See Telecom and Networking section, page 301 for details. (-L) Lead-free leaded devices are also applicable for these applications. 342 SiBar Thyristor Surge Protectors Raychem Circuit Protection SiBar Thyristor Table V1. Product Electrical Characteristics for SiBar Thyristor Surge Protectors (-L: Lead-free leaded devices) Part Number TVA270SA TVA270SA-L VDM Max. (V) 270 270 VBO Max. (V) 365 365 I H Min. (mA) 150 150 V T Max. (V) 3.0 3.0 C 1 Typ. (pF) 22 22 TVB058SA-L TVB170SA TVB170SA-L TVB200SA TVB200SA-L TVB270SA TVB270SA-L TVB300SA-L 58 170 170 200 200 270 270 300 78 265 265 320 320 365 365 400 150 150 150 150 150 150 150 150 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 43 20 20 20 20 20 20 20 NEW TVB200SB-L TVB270SB-L TVB300SB-L 200 270 300 320 365 400 150 150 150 4.0 4.0 4.0 25 25 25 NEW TVB170SC TVB170SC-L TVB200SC TVB200SC-L TVB270SC TVB270SC-L TVB300SC-L 170 170 200 200 270 270 300 265 265 320 320 365 365 400 150 150 150 150 150 150 150 4.0 4.0 4.0 4.0 4.0 4.0 4.0 50 50 50 50 50 50 50 NEW NEW NEW NEW Notes: All electrical characteristics are measured at 25°C. VDM measured per UL497B pulse requirements: at max. off-state leakage current (IDM) = 5 µA. VBO Measured at 100V/µs. C1 measured at 1 MHz with a 50 VDC bias. 4 Table V2. Surge Current Rating for SiBar Thyristor Surge Protectors (-L: Lead-free leaded devices) Part Description TVA270SA TVA270SA-L IEC 61000-4-5*ITU K.20/21/45* I TSM TIA-968-A (FCC Part 68)* Telcordia GR-1089* I pp(A) I pp(A) I pp(A) I pp(A) I pp(A) I pp(A) I pp(A) Min. 5 x 320 µs 10 x 560 µs 10 x 160 µs 10 x 1000 µs 2 x 10 µs 8 x 20 µs 5 x 310 µs (A) 90 70 100 50 150 150 90 22 90 70 100 50 150 150 90 22 di/dt (A/µs) 500 500 dV/dt (V/µs) 2000 2000 TVB058SA-L TVB170SA TVB170SA-L TVB200SA TVB200SA-L TVB270SA TVB270SA-L TVB300SA-L 55 90 90 90 90 90 90 90 55 70 70 70 70 70 70 70 70 100 100 100 100 100 100 100 50 50 50 50 50 50 50 50 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 55 90 90 90 90 90 90 90 22 22 22 22 22 22 22 22 500 500 500 500 500 500 500 500 2000 2000 2000 2000 2000 2000 2000 2000 NEW TVB200SB-L TVB270SB-L TVB300SB-L 100 100 100 100 100 100 150 150 150 80 80 80 250 250 250 250 250 250 100 100 100 30 30 30 500 500 500 2000 2000 2000 NEW TVB170SC TVB170SC-L TVB200SC TVB200SC-L TVB270SC TVB270SC-L TVB300SC-L 100 100 100 100 100 100 100 150 150 150 150 150 150 150 200 200 200 200 200 200 200 100 100 100 100 100 100 100 500 500 500 500 500 500 500 400 400 400 400 400 400 400 150 150 150 150 150 150 150 60 60 60 60 60 60 60 500 500 500 500 500 500 500 2000 2000 2000 2000 2000 2000 2000 NEW NEW NEW NEW Notes: *Lightning current wave forms for applicable industry specification. I TSM, peak on-state surge current is measured at 60 Hz, one cycle. di/dt: critical rate-of-rise of on-state current (pulsed power amplifier Vmax=600V; C=30 µF). dV/dt: critical rate-of-rise of off-stage voltage (linear wave form, VD = rated VBO, Tj = 25°C). Raychem Circuit Protection SiBar Thyristor Surge Protectors 343 Figure V1. Voltage-Current Characteristics I IPP IT IH IBO IDM V VT VDM VBO Note: The voltage current (V-I) is useful in depicting the electrical characteristics of the SiBar thyristor surge protectors in relation to each other. 4 Table V3. Parameter Definitions for SiBar Thyristor Surge Protectors Symbol Parameter Definition VBO Breakover voltage Maximum voltage across the device at breakdown measured under a specified voltage and current rate of rise. IBO Breakover current Instantaneous current flowing at the breakover voltage (VBO). IH Hold current Minimum current required to maintain the device in the on-state. IT On-state current Current through the device in the on-state condition. VT On-state voltage Voltage across the device in the on-state condition at a specified current (IT). VDM Maximum off-state voltage Maximum DC voltage that can be applied to the device while maintaining it in the off-state condition. IDM Off-state current Maximum DC value of current that results from the application of the maximum off-state voltage. Ipp Peak pulse current Rated peak pulse current of specified amplitude and waveshape that may be applied without damage. di/dt, dv/dt Critical rate of rise of on-state current and voltage Maximum current and voltage rate of rise the device can withstand without damage. 344 SiBar Thyristor Surge Protectors Raychem Circuit Protection SiBar Thyristor Figures V2–V5. Typical Electrical Characteristics vs. Temperature Figure V3. Breakover Voltage vs. Temperature Figure V2. Off-state Voltage vs. Temperature 120% 115% 110% Percentage of VBO at 25°C Percentage of VDM at 25° C 115% 105% 100% 95% 110% 105% 100% 95% 90% 85% -50 -25 0 25 75 50 Temperature (°C) 100 125 90% -50 150 Figure V4. Hold Current vs. Temperature -25 0 25 75 50 Temperature (°C) 100 125 150 4 Figure V5. Off-state Current vs. Temperature Hold current vs. temperature 200% 100 160% 10 140% IDM (mA) Percentage of IH at 25° C 180% 120% 100% 1 0.1 80% 60% 0.01 40% 20% -50 -25 0 25 50 75 Temperature (°C) Raychem Circuit Protection 100 125 150 0.001 -25 0 25 50 75 100 125 150 Temperature (°C) SiBar Thyristor Surge Protectors 345 Physical Description for Dimensions for SiBar Thyristor Surge Protectors Figure V6. Physical Description for Dimensions S A D B C K P J H Table V4. Product Dimensions for SiBar Thyristor Surge Protectors in Millimeters (Inches) Dimension A Min. B Max. Min. Max. C Min. Max. D* Min. Max. H Min. Max. J Min. K Max. Min. Max. P Ref. S Min. Max. TVBxxxSA(-L), TVBxxxSB-L, TVBxxxSC(-L) 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 5.21 5.59 (0.160) (0.180) (0.130) (0.150) (0.075) (0.095) (0.077) (0.083) (0.002)(0.006) (0.006) (0.012) (0.030) (0.050) (0.020) (0.205) (0.220) TVA270SA(-L) 4.06 4.57 2.29 2.92 1.91 2.41 1.27 1.63 0.010 0.152 0.15 0.41 0.76 1.52 (0.160) (0.180) (0.090) (0.115) (0.075) (0.095) (0.050) (0.064) (0.004)(0.006) (0.006) (0.016) (0.030) (0.060) — — 4.83 5.59 (0.190) (0.220) Notes: *D dimension is measured within dimension P. TVA series devices use industry standard SMA package type. TVB series devices use industry standard SMB package type. 4 All devices are bidirectional and may be oriented in either direction for installation. 346 SiBar Thyristor Surge Protectors Raychem Circuit Protection SiBar Thyristor Table V5. Physical Characteristics and Environmental Specifications for SiBar Thyristor Surge Protectors Lead material Tin/lead finish or matte tin finish(-L devices) Encapsulating material Epoxy, meets UL94V-0 requirements Solderability per MIL-STD-750, Method 2026 Solder heat withstand per MIL-STD-750, Method 2031 Solvent resistance per MIL-STD-750, Method 1022 Mechanical shock per MIL-STD-750, Method 2016 Vibration per MIL-STD-750, Method 2056 Storage temperature (°C) –55 to 150 Operating temperature (°C) –40 to 125 Junction temperature (°C) 150 Maximum lead temperature for soldering pupose; 10 seconds (°C) +260 Table V6. Reliability Tests for SiBar Thyristor Surge Protectors Test Conditions High temperature, reverse bias +100˚C, 50 VDC bias Duration 1000 hours High humidity, high temperature, reverse bias 85% RH, +85˚C, 50 VDC bias 1000 hours High temperature storage life +150˚C 1000 hours Temperature cycling -65˚C to +150˚C, 15 minute dwell 1000 cycles Autoclave 100% RH, +121˚C, 15 PSI 96 hours Table V7. Packaging and Marking Information for SiBar Thyristor Surge Protectors (-L: Lead-free leaded devices) NEW Part Description Tape and Reel Quantity Standard Package Part Marking Recommended Pad Layout (mil/inch) Dimension Dimension A (Nom.) B (Nom.) Dimension C (Nom.) Agency Recognition TVA270SA 5,000 20,000 270A 2.0 (0.079) 2.0 (0.079) 2.0 (0.079) UL TVA270SA-L 5,000 20,000 REAB 2.0 (0.079) 2.0 (0.079) 2.0 (0.079) UL TVB058SA-L 2,500 10,000 058A 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL TVB170SA 2,500 10,000 RCBB 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL TVB170SA-L 2,500 10,000 170A 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL TVB200SA 2,500 10,000 RDBB 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL TVB200SA-L 2,500 10,000 200A 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL TVB270SA 2,500 10,000 REBB 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL TVB270SA-L 2,500 10,000 270A 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL NEW TVB300SA-L 2,500 10,000 300A 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL NEW TVB200SB-L 2,500 10,000 200B 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL NEW TVB270SB-L 2,500 10,000 270B 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL NEW TVB300SB-L 2,500 10,000 300B 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL TVB170SC 2,500 10,000 RCBD 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL TVB170SC-L 2,500 10,000 170C 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL TVB200SC 2,500 10,000 RDBD 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL TVB200SC-L 2,500 10,000 200C 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL TVB270SC 2,500 10,000 REBD 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL TVB270SC-L 2,500 10,000 270C 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL TVB300SC-L 2,500 10,000 300C 2.261 (0.089) 2.159 (0.085) 2.743 (0.108) UL NEW Raychem Circuit Protection SiBar Thyristor Surge Protectors 347 4 Recommended Pad Layout for SiBar Thyristor Surge Protectors Figure V7. Recommended Pad Layout C A B B Agency Recognition for SiBar Thyristor Surge Protectors UL File # E179610 Part Numbering System for SiBar Thyristor Surge Protectors TV B 270 S A -L Lead-free leads (matte tin finish) Surge current rating A, B, C, refer to Table V2 4 VDM (max. off-state voltage indicator) Package type: A: SMA package B: SMB package Product Family Solder Reflow and Rework Recommendations for SiBar Thyristor Surge Protectors SiBar thyristor devices are compatible with standard reflow and wave soldering techniques. Figure V8 Solder Reflow Solder Rework • Use standard industry practices for the SiBar Thyristor Surge Protectors. 348 SiBar Thyristor Surge Protectors 300 Preheating Soldering Cooling 250 Temperature (°C) • Recommended reflow methods: IR, vapor phase oven, hot air oven. • Always preheat the device to prevent excessive thermal shock and stress. • Recommended maximum paste thickness of 0.25mm (0.010 in.). • Devices may be cleaned using standard industry methods and solvents. 200 150 100 50 0 30–90 5 120 Time (s) Raychem Circuit Protection SiBar Thyristor Table V8. Tape and Reel Specifications for SiBar Thyristor Surge Protectors SiBar thyristor devices are supplied on tape and reel per EIA481-1 standard. (See Figures V9 and V10 for details.) TVB Series Dimensions (mm) Description W 12 TVA Series Dimensions (mm) Tolerance (mm) +/- 0.30 Tolerance (mm) 12 +/- 0.3 P0 4.0 +/- 0.10 4.0 +/- 0.10 P1 8.0 +/- 0.10 8.0 +/- 0.10 P2 2.0 +/- 0.10 2.0 +/- 0.10 A0 4.3 — 2.9 +/- 0.10 B0 6.2 — 5.59 +/- 0.10 B1 max. 8.2 — 8.2 — D0 1.5 + 0.1, -0.0 1.5 + 0.1, -0 F 5.5 +/- 0.05 5.5 +/- 0.05 E1 1.75 +/- 0.10 1.75 +/- 0.10 E2 min. 9.85 — 9.85 — T max. 0.6 — 0.6 — T1 max. 0.1 — 0.1 — K0 max. 2.59 +/- 0.10 2.36 +/- 0.10 Leader min. 390 — 390 — Trailer min. 160 — 160 — 4 Figure V9. EIA Referenced Taped Component Dimensions for SiBar Thyristor Surge Protectors P0 D0 T Embossment P2 E1 Cover tape A0 W F E2 B1 T1 Raychem Circuit Protection B0 K0 Center lines of cavity P1 SiBar Thyristor Surge Protectors 349 Figure V10. EIA Referenced Reel Dimensions for SiBar Thyristor Protectors Reel Dimension A max. 330 N min. 50 W1 12.4 + 2.0, -0 W2 max. 18.4 W2 (measured at hub) A N (hub dia.) W1 (measured at hub) WARNING: 4 • Operation beyond the maximum ratings or improper use may result in device damage and possible electrical arcing and flame. • The devices are intended for protection against occasional overvoltage fault conditions and should not be used when repeated fault conditions or prolonged trip events are anticipated. • Device performance can be impacted negatively if devices are handled in a manner inconsistent with recommended electronic, thermal, and mechanical procedures for electronic components. 350 SiBar Thyristor Surge Protectors Raychem Circuit Protection