PHILIPS TZA3030U

INTEGRATED CIRCUITS
DATA SHEET
TZA3030
SDH/SONET STM1/OC3 optical
receiver
Objective specification
File under Integrated Circuits, IC19
1998 Aug 24
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
TZA3030
FEATURES
APPLICATIONS
• Low equivalent input noise, typically 1 pA/√Hz
• Digital fibre optic receiver in short, medium and long
haul optical telecommunications transmission systems
or in high speed data networks
• Wide dynamic range, typically 0.5 µA to 2 mA
• On-chip low-pass filter. The bandwidth can be varied
between 90 and 150 MHz using an external resistor.
Default value is 120 MHz.
• Wideband RF gain block.
• Differential transimpedance of 1.8 MΩ
GENERAL DESCRIPTION
• On-chip Automatic Gain Control (AGC)
The TZA3030 optical receiver is a low-noise
transimpedance amplifier with AGC plus a limiting
amplifier designed to be used in SDH/SONET fibre optic
links. The TZA3030 amplifies the current generated by a
photo detector (PIN diode or avalanche photodiode) and
converts it to a differential output voltage.
• Positive Emitter Coupled Logic (PECL) or
Current-Mode Logic (CML) compatible data outputs
• LOS (Loss Of Signal) detection
• LOS threshold level can be adjusted using a single
external resistor
• On-chip DC offset compensation
• Single supply voltage from 3.0 to 5.5 V
• Bias voltage for PIN diode.
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
TZA3030HL
LQFP32
TZA3030U
−
1998 Aug 24
DESCRIPTION
plastic low profile quad flat package; 32 leads; body 5 × 5 × 1.4 mm
naked die in waffle pack carriers; die dimensions 1.58 × 1.58 mm
2
VERSION
SOT401-1
−
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
TZA3030
BLOCK DIAGRAM
AGC
VCCA
handbook, full pagewidth
VCCD
2
2
2, 5
31
17, 20
LOS DETECTION
TTL
PECL
PEAK DETECTOR
DREF
4
IPhoto
7
2
kΩ
29
LOSTH
28
LOSTTL
26
LOS
27
LOSQ
18
OUTCML
19
OUTQCML
15
OUTSEL
22
OUTPECL
23
OUTQPECL
GAIN
CONTROL
65 pF
CML
A1
1 nF
A2
PECL
PREAMPLIFIER
LIMITING
AMPLIFIER
DC OFFSET
COMPENSATION
TESTING
12
1, 3, 6, 8
9, 30, 32
14
BIASING
TZA3030
10
11
7
SUB
AGND
5
RFTEST
Vref
BWC
Fig.1 Block diagram.
1998 Aug 24
13, 16, 21
24, 25
3
DGND
MBK857
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
TZA3030
PINNING
SYMBOL
PIN
TYPE
DESCRIPTION
AGND
1
ground
analog ground
VCCA
2
supply
analog supply voltage
AGND
3
ground
analog ground
DREF
4
analog output bias voltage for PIN diode (VCCA); cathode should be connected to this pin
VCCA
5
supply
analog supply voltage
AGND
6
ground
analog ground
IPhoto
7
analog input
current input; connect the anode of PIN diode to this pin; DC bias level is
1048 mV
AGND
8
ground
analog ground
AGND
9
ground
analog ground
BWC
10
analog input
bandwidth control pin; default bandwidth is 120 MHz; a resistor should be
connected between Vref (pin 11) and BWC (pin 10) to decrease bandwidth, or
between BWC (pin 10) and AGND to increase bandwidth
Vref
11
analog output band gap reference voltage; nominal value approximately 1.2 V
SUB
12
substrate
substrate pin; to be connected to AGND
DGND
13
ground
digital ground
RFTEST
14
analog input
test pin; not connected; not used in application
OUTSEL
15
CMOS input
output select pin; when OUTSEL is HIGH, CML data outputs are active and
PECL data outputs are disabled; OUTSEL is pulled LOW if left unconnected,
PECL data outputs will then be active and CML data outputs disabled
DGND
16
ground
digital ground
VCCD
17
supply
digital supply voltage
OUTCML
18
CML output
CML data output; OUTCML goes HIGH when current flows into IPhoto (pin 7)
OUTQCML
19
CML output
CML compliment of OUTCML (pin 18)
VCCD
20
supply
digital supply voltage
DGND
21
ground
digital ground
OUTPECL
22
PECL output
PECL data output; OUTPECL goes HIGH when current flows into IPhoto (pin 7)
OUTQPECL
23
PECL output
PECL compliment of OUTPECL (pin 22)
DGND
24
ground
digital ground
DGND
25
ground
digital ground
LOS
26
PECL output
PECL-compatible LOS detection pin; LOS output is HIGH when the input signal
is below the user programmable threshold level
LOSQ
27
PECL output
PECL compliment of LOS (pin 26)
LOSTTL
28
TTL output
CMOS-compatible LOS detection pin; the LOSTTL output is HIGH when the
input signal is below the user programmable threshold level
LOSTH
29
analog I/O
pin for setting input threshold level; nominal DC voltage is VCCA − 1.5 V;
threshold level set by connecting an external resistor between LOSTH and
VCCA or by forcing a current into LOSTH; default value for this resistor is 400 kΩ
AGND
30
ground
analog ground
AGC
31
analog I/O
AGC monitor voltage; the internal AGC circuit can be disabled by applying an
external voltage to this pin
AGND
32
ground
analog ground
1998 Aug 24
4
Philips Semiconductors
Objective specification
25 DGND
26 LOS
TZA3030
27 LOSQ
28 LOSTTL
29 LOSTH
30 AGND
32 AGND
handbook, full pagewidth
31 AGC
SDH/SONET STM1/OC3 optical receiver
AGND
1
24 DGND
VCCA
2
23 OUTQPECL
AGND
3
22 OUTPECL
DREF
4
21 DGND
TZA3030HL
18 OUTCML
AGND
8
17 VCCD
AGND
Fig.2 Pin configuration.
1998 Aug 24
5
DGND 16
7
OUTSEL 15
IPhoto
RFTEST 14
19 OUTQCML
DGND 13
6
SUB 12
AGND
Vref 11
20 VCCD
BWC 10
5
9
VCCA
MBK856
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
TZA3030
CHIP DIMENSIONS AND BONDING PAD LOCATIONS
COORDINATES(1)
COORDINATES(1)
SYMBOL
SYMBOL
PAD
x
y
PAD
OUTQCML
19
x
y
1398
543
AGND
1
102
1251
VCCA
2
102
1111
VCCD
20
1398
683
21
1398
823
AGND
3
102
971
DGND
DREF
4
102
814
OUTPECL
22
1398
963
VCCA
5
102
674
OUTQPECL
23
1398
1103
AGND
6
102
534
DGND
24
1398
1243
IPhoto
7
102
395
DGND
25
1283
1400
AGND
8
102
254
LOS
26
1143
1400
AGND
9
243
105
LOSQ
27
986
1400
BWC
10
383
105
LOSTTL
28
829
1400
Vref
11
523
105
LOSTH
29
671
1400
SUB
12
663
105
AGND
30
514
1400
DGND
13
803
105
AGC
31
357
1400
RFTEST
14
943
105
AGND
32
217
1400
OUTSEL
15
1100
105
Note
1. All coordinates (µm) are measured with respect to the
bottom left-hand corner of the die.
403
handbook, full pagewidth
31
30
29
28
27
26
25
AGND
1
24
DGND
VCCA
2
23
OUTQPECL
AGND
3
22
OUTPECL
DREF
4
21
DGND
VCCA
5
20
VCCD
AGND
6
19
OUTQCML
IPhoto
7
18
OUTCML
8
17
VCCD
14
15
16
DGND
y
13
OUTSEL
12
RFTEST
11
DGND
10
SUB
0
9
Vref
0
TZA3030U
BWC
AGND
x
32
AGND
1.58
mm
DGND
1398
LOS
18
LOSQ
OUTCML
LOSTTL
263
LOSTH
105
1398
AGND
1257
17
AGC
16
VCCD
AGND
DGND
1.58 mm
Fig.3 Bonding pad locations of TZA3030U.
1998 Aug 24
6
MBK858
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
TZA3030
FUNCTIONAL DESCRIPTION
Limiting amplifier
The TZA3030 contains five functional blocks:
A limiting amplifier boosts the signal up to PECL levels.
The output can be either CML or PECL compatible,
selected by means of pin OUTSEL. When OUTSEL is
HIGH, the CML data outputs are active and the PECL data
outputs are disabled. If OUTSEL is left unconnected, it is
pulled LOW and the PECL data outputs are active while
the CML data outputs are disabled.
• Preamplifier input stage
• Low-pass filter
• Limiting amplifier stage
• Offset compensation loop
• Loss of signal detection unit.
The logic level symbol definitions for CML and PECL are
shown in Fig.4.
Preamplifier
The preamplifier provides low-noise amplification of the
current generated by a photodiode connected to
pin IPhoto.
The CML and PECL output circuits are given in Fig.5.
A differential amplifier converts the output of the
preamplifier to a differential voltage. An AGC loop
increases the dynamic range of the receiver by reducing
the feedback resistance of the preamplifier. The AGC loop
hold capacitor is integrated on-chip, so an external
capacitor is not needed for AGC. The AGC voltage can be
monitored at pin AGC. This pin can be left unconnected for
normal operation. It can also be used to force an external
AGC voltage. If pin AGC is connected to VCCA, the internal
AGC loop is disabled and the receiver gain is at a
maximum. In this case, the maximum input current is
approximately 10 µA.
A control loop connected between the limiting amplifier
output and the differential amplifier input cancels the
DC offset. The loop bandwidth is fixed internally at 30 kHz.
Offset compensation loop
Loss Of Signal (LOS) detection
The LOS section detects an input signal level below a fixed
threshold. The threshold is determined by the current
through pin LOSTH. If this current is increased, the
threshold level will rise. An external resistor connected
between pin LOSTH and VCCA can be used, or a current
can be forced into pin LOSTH. The default value for the
external resistor is 400 kΩ. In this case, the current
through pin LOSTH will be approximately 3.75 µA since
the voltage at pin LOSTH is regulated at 1.5 V below the
supply voltage. This threshold corresponds to an input
current of 208 nA. The ratio of LOSTH current to input
current is thus approximately 18 : 1. When the input signal
level falls below this threshold, the LOS
(PECL compatible) and LOSTTL (TTL compatible)
outputs go HIGH. The hysteresis is fixed internally at 3 dB.
Response time is typically less than 20 µs.
Low-pass filter
A low-pass filter controls the bandwidth of the receiver,
which can be varied between 90 and 150 MHz.
The bandwidth is set to 120 MHz by default. It can be
decreased by connecting a resistor between pin BWC and
pin Vref or increased by connecting a resistor between
pin BWC and AGND.
1998 Aug 24
7
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
TZA3030
VCC
handbook, full pagewidth
VO(max)
VOQH
VOH
Vo(p-p)
VOQL
VOO
VOL
VO(min)
MGR243
Fig.4 Logic level symbol definitions for CML and PECL.
VCC
handbook, full pagewidth
VCC
100 Ω
105 Ω
100 Ω
OUTCML
105 Ω
OUTQCML
OUTPECL
OUTQPECL
0.5 mA
9 mA
6 mA
0.5 mA
MGK886
a. CML.
b. PECL.
Fig.5 Output circuits.
1998 Aug 24
8
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
TZA3030
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MAX.
UNIT
−0.5
+6
V
pin 7: IPhoto
−0.5
+2
V
pin 14: RFTEST
−0.5
VCC
supply voltage
Vn
DC voltage
In
MIN.
VCC + 0.5 V
pins 22, 23, 26 and 27: OUTPECL, OUTQPECL, LOS and LOSQ VCC − 2
VCC + 0.5 V
pins 18 and 19: OUTCML and OUTQCML
VCC − 2
VCC + 0.5 V
pin 29: LOSTH
−0.5
VCC + 0.5 V
pin 10: BWC
−0.5
+3.2
pin 31: AGC
−0.5
VCC + 0.5 V
pin 11: Vref
−0.5
+3.2
V
V
pin 4: DREF
−0.5
VCC + 0.5 V
pin 15: OUTSEL
−0.5
VCC + 0.5 V
pin 28: LOSTTL
−0.5
VCC + 0.5 V
pin 7: IPhoto
−2.5
+2.5
mA
pin 14: RFTEST
−2
+2
mA
pins 22, 23, 26 and 27: OUTPECL, OUTQPECL, LOS and LOSQ −25
+10
mA
pins 18 and 19: OUTCML and OUTQCML
−15
+15
mA
pin 29: LOSTH
−2
+2
mA
pin 10: BWC
−1
+1
mA
pin 31: AGC
−0.2
+0.2
mA
pin 11: Vref
−2
+2.5
mA
pin 4: DREF
−2.5
+2.5
mA
pin 15: OUTSEL
−0.5
+0.5
mA
pin 28: LOSTTL
−16
+16
mA
600
mW
DC current
Ptot
total power dissipation
−
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−40
+85
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth(j-s)
thermal resistance from junction to solder point
tbf
K/W
Rth(j-a)
thermal resistance from junction to ambient
tbf
K/W
1998 Aug 24
9
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
TZA3030
CHARACTERISTICS
For typical values Tamb = 25 °C and VCC = 5 V; minimum and maximum values are valid over the entire ambient
temperature range and process spread.
SYMBOL
PARAMETER
VCC
supply voltage
ICCD
digital supply current
CONDITIONS
MIN.
3
TYP.
5
MAX.
5.5
UNIT
V
note 1
13
20
28
mA
note 2
−
47
−
mA
note 3
11
17
24
mA
ICCA
analog supply current
24
36
51
mA
Ptot
total power dissipation
−
−
525
mW
Tj
junction temperature
−40
−
+110
°C
Tamb
operating ambient
temperature
−40
+25
+85
°C
Rtr
small-signal transresistance
of the receiver
PECL outputs
−
2000
−
kΩ
CML outputs
−
1000
−
kΩ
−
120
−
MHz
20
30
40
kHz
∆f = 90 MHz
−
16
−
nA
∆f = 120 MHz
−
tbf
−
nA
∆f = 155 MHz
−
tbf
−
nA
−
0.5
µA/V
f = 10 MHz to 100 MHz −
10
µA/V
f−3dB(h)
high frequency −3 dB point
f−3dB(l)
low frequency −3 dB point
In(tot)
total integrated RMS noise
current over bandwidth
PSRR
power supply rejection ratio
measured differentially
pin BWC left
unconnected; note 4
referenced to input;
Ci = 1.2 pF; note 5
measured differentially;
note 6
f = 100 kHz to 10 MHz
∆Rtr/∆t
−
1
−
dB/ms
tbf
1048
tbf
mV
VCC = 5 V
−2000
+1
+2000
µA
VCC = 3.3 V
−1000
+1
+1000
µA
mV
AGC loop constant
Input: IPhoto
Vbias(IPhoto) input bias voltage
Ii(IPhoto)(p-p) input current (peak-to-peak
value)
PECL outputs: OUTPECL and OUTQPECL
VOH
HIGH-level output voltage
50 Ω to VCC − 2 V
VCC − 1100 −
VCC − 900
VOL
LOW-level output voltage
50 Ω to VCC − 2 V
VCC − 1840 −
VCC − 1620 mV
VOO
output offset voltage
measured differentially
−10
−
+10
mV
tr
rise time
20% to 80%
−
tbf
tbf
ps
tf
fall time
80% to 20%
−
tbf
tbf
ps
1998 Aug 24
10
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
SYMBOL
PARAMETER
TZA3030
CONDITIONS
MIN.
TYP.
MAX.
UNIT
PECL outputs: LOS and LOSQ
VOH
HIGH-level output voltage
50 Ω to VCC − 2 V
VCC − 1100 −
VCC − 900
VOL
LOW-level output voltage
50 Ω to VCC − 2 V
VCC − 1840 −
VCC − 1620 mV
VOO
output offset voltage
measured differentially
−10
−
+10
mV
tr
rise time
20% to 80%
−
−
600
ns
tf
fall time
80% to 20%
−
−
200
ns
mV
CML outputs: OUTCML and OUTQCML
VO
output voltage
measured single-ended;
50 Ω to VCC
VCC − 260
−
VCC
mV
Vo(se)(p-p)
output voltage single-ended
(peak-to-peak value)
50 Ω to VCC
150
200
260
mV
VOO
output offset voltage
measured differentially;
50 Ω to VCC
−10
−
+10
mV
Ro
output resistance
measured single-ended
80
100
120
Ω
tr
rise time
20% to 80%;
RL = 50 Ω; CL = 1 pF
−
tbf
−
ps
tf
fall time
80% to 20%;
RL = 50 Ω; CL = 1 pF
−
tbf
−
ps
0.8
V
CMOS input: OUTSEL
VIL
LOW-level input voltage
−
0.4
VIH
HIGH-level input voltage
VCC − 1
VCC − 0.5 −
V
CMOS output: LOSTTL
VOL
LOW-level output voltage
0
−
0.2
V
VOH
HIGH-level output voltage
VCC − 0.2
−
VCC
V
Notes
1. OUTPECL, OUTQPECL, OUTCML, OUTQCML, LOS and LOSQ outputs are left unconnected. OUTPECL and
OUTQPECL outputs are active.
2. OUTPECL and OUTQPECL outputs are terminated with 50 Ω to VT. VT is an external termination voltage for PECL
outputs and is 2 V below the supply voltage. OUTCML, OUTQCML, LOS and LOSQ outputs are left unconnected.
3. OUTCML and OUTQCML outputs are terminated with 50 Ω to VCCD; CML outputs are active. OUTPECL,
OUTQPECL, LOS and LOSQ outputs are left unconnected.
4. The bandwidth is set to 120 MHz by default. It can be varied between 90 and 150 MHz by adjusting the voltage at
pin BWC.
5. All In(tot) measurements were made with an input capacitance of Ci = 1.2 pF. This was comprised of 0.7 pF for the
photodiode itself, with 0.3 pF allowed for the PCB layout and 0.2 pF intrinsic to the package.
6. PSRR is defined as the ratio of the equivalent current change at the input (∆IIPhoto) to a change in supply voltage:
∆I IPhoto
PSRR = ------------------∆V CC
For example, a 4 mV disturbance on VCCat 10 MHz will typically generate the equivalent of 2 nA extra photodiode
current.
1998 Aug 24
11
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
TZA3030
APPLICATION INFORMATION
VCC
handbook, full pagewidth
680 nF
10 µH
22 nF
2, 5
22 nF
400 kΩ
2
VCCA
10 µH
2
VCCD
LOSTH
29
17, 20
27
1 nF
DREF
26
28
4
23
TZA3030
IPhoto
22
7
19
12
1, 3, 6, 8
9, 30, 32
SUB
31
AGND
10
AGC
14
BWC
11
13, 16, 21 18
24, 25
15
RFTEST Vref
OUTSEL
7
LOSQ
LOS
LOSTTL
R1
R1
Zo = 50 Ω
OUTQPECL
OUTPECL
Zo = 50 Ω
OUTQCML
R2
R2
OUTCML
DGND
MBK859
5
Fig.6 Application diagram: PECL data outputs active.
VCC
handbook, full pagewidth
680 nF
10 µH
22 nF
2, 5
22 nF
400 kΩ
2
VCCA
2
VCCD
LOSTH
29
10 µH
17, 20
27
1 nF
DREF
26
28
4
23
TZA3030
IPhoto
22
7
19
12
1, 3, 6, 8
9, 30, 32
SUB
AGND
31
10
AGC
BWC
14
11
RFTEST Vref
13, 16, 21 18
24, 25
15
OUTSEL
7
LOSQ
LOS
LOSTTL
OUTQPECL
OUTPECL
R1
Zo = 50 Ω
OUTQCML
OUTCML
Zo = 50 Ω
DGND
5
MBK860
Fig.7 Application diagram: CML data outputs active.
1998 Aug 24
12
R1
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
TZA3030
PECL outputs: OUTPECL, OUTQPECL, LOS and LOSQ
PECL outputs can be terminated in different ways depending on the power supply voltage (see Fig.8).
VCC = 3.3 V
handbook, full pagewidth
R1 = 127 Ω
VIQ
VI
R1 = 127 Ω
VOQ
VO
R2 = 82.5 Ω
R2 = 82.5 Ω
GND
VCC = 5 V
R1 = 83.3 Ω
VIQ
VI
VO
R2 = 125 Ω
GND
Fig.8 PECL termination schemes.
1998 Aug 24
R1 = 83.3 Ω
VOQ
13
R2 = 125 Ω
MGK887
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
If the output impedance was 50 Ω rather than 100 Ω,
an 8 mA tail current would be needed to generate the
same voltage swing. This would increase power
dissipation by 33%.
CML outputs: OUTCML and OUTQCML
The output impedance of the CML output driver is 100 Ω
(see Fig.9) which doesn’t match the characteristic
impedance of the strip line. While this means that the
reflections of some incident edges will arrive at the driver
output on the PCB, this value was selected to reduce
power dissipation inside the IC. The parallel combination
of 100 Ω and 50 Ω (33 Ω) will generate a signal swing of
200 mV (peak-to-peak value, single-sided) with a tail
current of 6 mA.
generator
inside TZA3030
handbook, full pagewidth
TZA3030
If necessary, the output impedance of the generator can
be matched to the line impedance by connecting an
external 100 Ω resistor in parallel with the output as shown
in Fig.10. The magnitude of the output voltage swing will
not change due to adaptive regulation. However, power
dissipation will increase by 33%.
interconnect
PCB
receiver
inside TZA3004
VCC
100
Ω
VCC
100
Ω
Zo = 50 Ω
VO
VI
Zo = 50 Ω
50 Ω
50 Ω
VIQ
VOQ
MBK861
Fig.9 CML interface circuit without matched impedance; low power dissipation.
generator
inside TZA3030
handbook, full pagewidth
interconnect
PCB
receiver
inside TZA3004
VCC
100
Ω
VCC
100
Ω
100
Ω
VO
100
Ω
Zo = 50 Ω
VI
Zo = 50 Ω
50 Ω
50 Ω
VIQ
VOQ
MBK862
Fig.10 CML interface circuit with matched impedance; high power dissipation.
1998 Aug 24
14
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
TZA3030
PACKAGE OUTLINE
SOT401-1
LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm
c
y
X
A
17
24
ZE
16
25
e
A A2
E HE
(A 3)
A1
w M
pin 1 index
θ
bp
32
Lp
9
L
1
8
detail X
ZD
e
v M A
w M
bp
D
B
HD
v M B
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HD
HE
L
Lp
v
w
y
mm
1.60
0.15
0.05
1.5
1.3
0.25
0.27
0.17
0.18
0.12
5.1
4.9
5.1
4.9
0.5
7.15
6.85
7.15
6.85
1.0
0.75
0.45
0.2
0.12
0.1
Z D (1) Z E (1)
θ
0.95
0.55
7
0o
0.95
0.55
o
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
95-12-19
97-08-04
SOT401-1
1998 Aug 24
EUROPEAN
PROJECTION
15
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
If wave soldering cannot be avoided, for LQFP
packages with a pitch (e) larger than 0.5 mm, the
following conditions must be observed:
SOLDERING
Introduction
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• The footprint must be at an angle of 45° to the board
direction and must incorporate solder thieves
downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(order code 9398 652 90011).
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Reflow soldering
Reflow soldering techniques are suitable for all LQFP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 50 and 300 seconds depending on heating
method. Typical reflow peak temperatures range from
215 to 250 °C.
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Wave soldering
Wave soldering is not recommended for LQFP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
CAUTION
Wave soldering is NOT applicable for all LQFP
packages with a pitch (e) equal or less than 0.5 mm.
1998 Aug 24
TZA3030
16
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
TZA3030
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Aug 24
17
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
NOTES
1998 Aug 24
18
TZA3030
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 optical receiver
NOTES
1998 Aug 24
19
TZA3030
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© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
425102/200/01/pp20
Date of release: 1998 Aug 24
Document order number:
9397 750 04069