UM6000 / UM6200/UM6600 POWER PIN DIODES KEY FEATURES DESCRIPTION used successfully in switches in which low insertion loss at low bias current is required. The “A” style package for this series is the smallest Microsemi PIN diode package. It has been used successfully in many microwave applications using coaxial, microstrip, and stripline techniques at frequencies beyond XBand. The “B” and “E” style leaded packages offer the highest available power dissipation for a package this small. They have been used extensively as series switch elements in microstrip circuits. The “C” style package duplicates the physical outline available in conventional ceramic-metal packages but incorporates the many reliability advantages of the Microsemi construction. WWW . Microsemi .C OM These series of PIN diodes are designed for applications requiring small package size and moderate average power handling capability. The low capacitance of the UM6000 and UM6600 allows them to be used as series switching elements to 1 GHz. The low resistance of the UM6200 is useful in applications where forward bias current must be minimized. Because of its thick I-region width and long lifetime the UM6000 and UM6600 have been used in distortion sensitive and high peak power applications, including receiver protectors, TACN, and IFF equipment. Their low capacitance allows them to be useful as attenuator diodes at frequencies greater than 1 GHz. The UM6200 has been Voltage ratings to 1000V Average power dissipation to 6 W Series resistance as low as 0.4 Ω Carrier lifetime greater than 1.0 µs Non cavity design Thermally matched configuration Low capacitance at 0 V bias Low conductance at 0 V bias Compatible with automatic insertion equipment IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Package Condition UM6000/UM6600 PD A & C 25 OC Pin Temperature 6W θ 25 OC/W B & E ½ in. total length to 25 OC Contact 2.5 W 60 OC/W Free Air 0.5 W SM 25 OC End Cap Temperature 4.5 W 27.5OC/W All UM6200 PD θ Isolated stud package available Surface mount package available RoHS compliant packaging available: use UMX6001B, etc. 4 W 37.5 oC/W 2.0 W 75 oC/W 0.5 W 3.0 W 42.5 oC/W UM6000 25 kW UM6600 13 kW 1 us pulse (Single) APPLICATIONS/BENEFITS 10 kW UM6000/UM62000/UM6600 VOLTAGE RATINGS Reverse Voltage @ 10 uA 100 200 400 800 1000 Copyright 2005 Rev. 0, 2006-03-13 UM6001 UM6002 UM6006 UM6010 UM6201 UM6202 UM6204 - Microsemi UM6601 UM6602 UM6606 UM6610 Page 1 UM6000 / UM6200/UM6600 POWER PIN DIODES ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified) Reverse Current (Max) Series Resistance(Max) Capacitance (Max) Parallel Resistance(Min) Carrier Lifetime(Min) I-Region Width (Min) Symbol IR RS CT Rp τ W Conditions UM6600 UM6000 At rated voltage 10 10 10 uA If = 100 mA, F= 100 MHz VR = 100 V, F = 1 MHZ VR = 100 V, F = 100 MHz IF = 10 mA 2.5 0.4 300k 1.0 1.7 0.5 300k 1.0 0.4 1.1 350k 0.6 Ohms pF Ohms us - 150 150 40 um Style “B” UM6200 WWW . Microsemi .C OM Parameter Units Style “SM” UM6000/UM6200/UM6600 Rs versus If f = 100 MHz 105 104 Rs (Ohms) 103 UM6600 102 UM6000 UM6200 101 ELECTRICALS 100 10-1 10-6 10-5 10-4 10-3 10-2 10-1 100 If (A) Copyright 2005 Rev. 0, 2006-03-13 Microsemi Page 2 UM6000 / UM6200/UM6600 POWER PIN DIODES WWW . Microsemi .C OM UM6000/UM6200/UM6600 FORWARD VOLTAGE versus CURRENT FORWARD CURRENT (A) 100 10-1 UM6200 10-2 UM6000 UM6600 -3 10 10-4 10-5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE UM6000/UM6600 Rp versus Vr 103 102 f = 500 MHz ELECTRICALS Rp (kOhms) f = 100 MHz f = 1 GHz f = 3 GHz 101 100 100 101 102 103 Vr (Volts) Copyright 2005 Rev. 0, 2006-03-13 Microsemi Page 3 UM6000 / UM6200/UM6600 POWER PIN DIODES WWW . Microsemi .C OM UM6200 Rp versus Vr 3 10 Rp (kOhms) f = 100 MHz 102 f = 500 MHz f = 1 GHz 1 10 f = 3 GHz 100 100 101 102 103 Vr (Volts) UM6000 Ct versus Vr 1.5 f = 1 MHz 1.0 ELECTRICALS Ct (pF) f = 5 MHz f = 10 MHz 0.5 f => 100 MHz 0.0 1 10 100 250 Vr (Volts) Copyright 2005 Rev. 0, 2006-03-13 Microsemi Page 4 UM6000 / UM6200/UM6600 POWER PIN DIODES UM6200 WWW . Microsemi .C OM Ct versus Vr 1.4 1.3 f = 1 MHz Ct (pF) 1.2 f = 10 MHz 1.1 f = 100 MHz 1.0 f = 500 MHz 0.9 0.8 1 10 100 Vr (Volts) UM6600 Ct versus Vr 0.8 0.7 f = 1 MHz Ct (pF) 0.6 0.5 f = 5 MHz 0.4 ELECTRICALS f = 10 MHz 0.3 f = 100 MHz 0.2 1 10 100 Vr (Volts) Copyright 2005 Rev. 0, 2006-03-13 Microsemi Page 5 UM6000 / UM6200/UM6600 POWER PIN DIODES UM6000/UM6200 WWW . Microsemi .C OM MAX POWER DISSIPATION versus LEAD TEMPERATURE MAX POWER DISSIPATION (W) 5.0 4.0 3.0 L = 1/4" L = 3/8" L = 1/2" 2.0 L = 5/8" L = 3/4" 1.0 0.0 0 25 50 75 100 125 o 150 175 TL LEAD TEMPERATURE ( C) UM6600 MAX POWER DISSIPATION versus LEAD TEMPERATURE 4.0 L = 1/4" 3.0 L = 3/8" L = 1/2" 2.0 ELECTRICALS MAX POWER DISSIPATION (W) 5.0 L = 5/8" L = 3/4" 1.0 0.0 0 25 50 75 100 125 o 150 175 TL LEAD TEMPERATURE ( C) Copyright 2005 Rev. 0, 2006-03-13 Microsemi Page 6 UM6000 / UM6200/UM6600 POWER PIN DIODES UM6000/UM6200/UM6600 WWW . Microsemi .C OM AVERGE POWER DISSIPATION versus TEMPERATURE AVERGE POWER DISSIPATION (W) 7.0 6.0 UM6000 AND UM6200 SERIES 5.0 4.0 3.0 UM6600 2.0 1.0 0.0 -50 -25 0 25 50 o 75 100 125 150 175 TEMPERATURE ( C) (OFONE METAL PIN) UM6000/UM6200/UM6600 PULSE THERMAL IMPEDANCE ( C/W) PULSE THERMAL IMPEDANCE VS PULSE WIDTH 102 o 101 UM6200 100 UM6000 ELECTRICALS ------UM6600 10-1 10-2 10-6 10-5 10-4 10-3 10-2 10-1 100 PULSE WIDTH (SEC) Copyright 2005 Rev. 0, 2006-03-13 Microsemi Page 7 UM6000 / UM6200/UM6600 POWER PIN DIODES WWW . Microsemi .C OM STYLE “A” STYLE “B” STYLE “C” STYLE “E” STYLE “D” MECHANICAL Copyright 2005 Rev. 0, 2006-03-13 Microsemi Page 8 UM6000 / UM6200/UM6600 POWER PIN DIODES WWW . Microsemi .C OM UM6000/UM6200/UM6600 UM6000/UM6200/UM6600 STYLE “SM” FOOTPRINT MECHANICAL Copyright 2005 Rev. 0, 2006-03-13 Microsemi Page 9 UM6000 / UM6200/UM6600 POWER PIN DIODES NOTES: WWW . Microsemi .C OM NOTES: 1. These dimensions will match the terminals and provide for additional solder fillets at the outboard ends at least as wide as the terminals themselves, assuming accuracy of placement within 0.005” 2. If the mounting method chosen requires use of an adhesive separate from the solder compound, a round (or square) spot of cement as shown should be centrally located. NOTES Copyright 2005 Rev. 0, 2006-03-13 Microsemi Page 10