UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) KEY FEATURES DESCRIPTION 60 dBm at 300 kHz with 1 watt per tone. The forward biased resistance/reactance vs. frequency characteristics are flat down to 10 kHz. The capacitance vs. reverse bias voltage characteristic is flat down to 2 MHz. In attenuator configuration, the UM2100 produces extremely low distortion at low values of attenuator control current, and very low insertion loss (0.2dB) in the “0dB” attenuator state. WWW . Microsemi .C OM UM2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band (2-30MHz) and below. As series configured switches, these long lifetime (25µs typical) diodes can control up to 2.5 kW, CW in a 50 ohm system. In HF band, insertion loss is less than 0.25dB and isolation is greater than 32dB (off-state). The UM2100 series offers the lowest distortion performance in both the transmit and receive modes. Less than 50 mA forward bias is requires to obtain an IP3 of HF band (2-30 MHz) PIN Long Lifetime (25µs typical) High Power ( 1kW, CW) High Isolation (32dB) Low Loss (0.25dB) Very Low Distortion (IP3=60dBm) Voltage ratings to 1000 V IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Package A Condition PD O 25 C Pin Temperature O 25 W O B & E ½ in. total length to 25 C Contact Free Air O C 25 C Stud Temperature D θ O 25 C Stud Temperature SM O 25 C End Cap Temperature All 1 us pulse (Single) 6 C/W O 12 W 2.5 W 25 W 12.5 C/W 18.75 W 8 OC/W 15W 10 OC/W 6 OC/W APPLICATIONS/BENEFITS Isolated stud package available Surface mount package available RoHS compliant packaging available: use UMX2101B, etc. 100 kW OPERATING AND STORAGE TEMPERATURE RANGE -65 OC to + 175 OC VOLTAGE RATINGS Copyright 2005 Rev. 0, 2005-12-13 UM2101 UM2102 UM2104 UM2106 UM2108 UM2110 UM2100 Reverse Voltage @ 10 uA 100V 200V 400V 600V 800V 1000V Microsemi Page 1 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified) Symbol Total Capacitance Series Resistance Carrier Lifetime Reverse Current CT RS τ IR IP3 Conditions MIN. TYPICAL MAX. Units 2.5 2.0 20 1.9 1.0 25 50 60 pF Ohms µs µA dBm VR=100V, F= 1 MHz If = 100 mA, F= 2 MHz IF = 10 mA/100 V VR = Voltage rating P=2W total, IF=25mA F1 = 1.999 MHz F2 = 2.001 MHz 1.0 W/tone Style “B” 10 WWW . Microsemi .C OM Parameter Style “SM” DC current supply * SIGNAL GENERATOR * RFC f1 SPECTRUM POWER SPLITTER f2 * ELECTRICALS SIGNAL GENERATOR ANALYZER RFC * * May be controlled with the IEEE-488 BUS CIRCUIT Copyright 2005 Rev. 0, 2005-12-13 Microsemi Page 2 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) WWW . Microsemi .C OM Rs versus If TYPICAL 10 2 f = 2 MHz 1 Rs (Ohms) 10 100 10-1 10-1 100 101 102 If (mA) RESISTANCE / REACTANCE VERSUS FREQUENCY TYPICAL If = 100 mA 1.5 RESISTANCE 1.0 ELECTRICALS RESISTANCE / REACTANCE (Ohms) 2.0 0.5 REACTANCE 0.0 -0.5 102 103 104 105 106 107 FREQUENCY (Hz) Copyright 2005 Rev. 0, 2005-12-13 Microsemi Page 3 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) WWW . Microsemi .C OM POWER LEVEL/TONE VERSUS FORWARD BIAS CURRENT TYPICAL 40 70 F2 = F + 1 KHz 35 65 2 MHz 1 MHz 500 KHz250 KHz 150 KHz 30 60 25 55 20 50 15 IP3 [dBm] POWER LEVEL/TONE [dBm] F1 = F - 1 KHz 45 100 101 102 If NEEDED TO OBTAIN AN IM3 OF -60 dBc [mA] CAPACITANCE VERSUS VOLTAGE TYPICAL 20 10 KHz 18 100 KHz 14 200 KHz 12 10 ELECTRICALS CAPACITANCE (pF) 16 400 KHz 8 1 MHz 6 4 2 MHz 4 MHz 2 10 MHz 0 10-1 100 101 102 Vr (V) Copyright 2005 Rev. 0, 2005-12-13 Microsemi Page 4 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) WWW . Microsemi .C OM MEAN If VERSUS Vf CURVE VERSUS TEMPERATURE TYPICAL 101 100 If (A) 10-1 150C------------ 10-2 ---------------125C ---------------100C 10-3 10-4 --------------75C 10-5 -----25C 10-6 0.0 0.5 1.0 1.5 Vf (V) ELECTRICALS Copyright 2005 Rev. 0, 2005-12-13 Microsemi Page 5 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) STYLE “B” STYLE “C” Copyright 2005 Rev. 0, 2005-12-13 WWW . Microsemi .C OM STYLE “A” STYLE “CR” Microsemi Page 6 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) WWW . Microsemi .C OM STYLE “D” STYLE “DR” STYLE “E” STYLE “SM” MECHANICL Copyright 2005 Rev. 0, 2005-12-13 Microsemi Page 7 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) WWW . Microsemi .C OM STYLE “SM” FOOTPRINT MECHANICAL Copyright 2005 Rev. 0, 2005-12-13 Microsemi Page 8 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) WWW . Microsemi .C OM NOTES: NOTES Copyright 2005 Rev. 0, 2005-12-13 Microsemi Page 9