UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O S KEY FEATURES DESCRIPTION series offers lower capacitance. Both diode series are intended for use in linear attenuators operating from HF to beyond 1 GHz. Low distortion is a result of transit time frequencies below 5 MHz. Operated as RF switches, either diode series can be operated at low dc reverse bias voltages, to hold off much higher RF voltage levels. ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) A B&E C D Condition UM4300 θ PD UM7300 PD θ 20 W 7.5 oC/W 7.5 W ½ in. total length to 25 OC Contact Free Air O 25 C Stud Temperature 10 W 15 oC/W 2.5 W 20 W 7.5 oC/W 4W 25 C Stud Temperature O SM 25 C End Cap Temperature All 1 us pulse (Single) Power dissipation to 20 W (UM4300) Capacitance as low as 0.7 pF (UM7300) 37.5 OC/W 7.5 W Compatible with automatic insertion equipment 20 OC/W O 20 C/W o 6W o 15 W 20 C/W 5.5 W 18 OC/W 500 kW 100 kW 15 W 10 C/W Non cavity design Thermally matched configuration O 25 C Pin Temperature O Useful frequency range extends below 500 kHz Voltage ratings to 1000V IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Package Extremely low distortion performance WWW . Microsemi .C OM The UM4300 and UM7300 series combine a diode chip of extremely thick intrinsic region with a low thermal resistance construction. This results in diodes uniquely applicable to very low distortion linear attenuators and specialized functions. The UM4300 series, with large cross-sectional chip area offers the highest power capability, of the two series. The UM7300 APPLICATIONS/BENEFITS Isolated stud package available O 25 C/W Surface mount package available RoHS compliant packaging available: use UMX4301SM, etc. VOLTAGE RATINGS Reverse Voltage @ 10 uA 100 200 400 600 800 1000 Copyright 2005 Rev. 0, 2006-04-27 UM7301 UM7302 UM7306 UM7310 UM4300 SERIES Style “B” UM4301 UM4302 UM4306 UM4310 Style “SM” Microsemi Page 1 UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O Symbol Reverse Current (Max) IR Series Resistance(Max) Series Resistance(Min) Capacitance (Max) Parallel Resistance(Min) RS RS CT RP Conditions UM4300 UM7300 Units At rated voltage 10 10 uA 1.5 1000 2.2 200k 3.0 3000 0.7 150k Ohms Ohms pF Ohms If = 100 mA, F= 100 MHz If = 10 uA, F= 100 MHz VR = 100 V, F = 1 MHZ VR = 100 V, F = 100 MHz Carrier Lifetime(Min) τ IF = 10 mA 6.0 4.0 us I-Region Width (Min) W - 250 250 um WWW . Microsemi .C OM Parameter S Rs versus If TYPICAL 105 104 Rs (Ohms) 10 UM7300 3 UM4300 102 101 f= 100 MHz 10 0 -1 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 ELECTRICALS 10 0 10 If (mA) Copyright 2005 Rev. 0, 2006-04-27 Microsemi Page 2 UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O S WWW . Microsemi .C OM UM4300 PARALLEL RESISTANCE versus REVERSE VOLTAGE TYPICAL 103 100 MHz Rp (kOhms) 102 500 MHz 1 GHz 101 100 100 101 102 103 Vr (V) UM7300 PARALLEL RESISTANCE versus REVERSE VOLTAGE TYPICAL 102 100 MHz 500 MHz Rp (kOhms) 1 GHz 3 GHz 101 100 100 101 102 103 Vr (V) Copyright 2005 Rev. 0, 2006-04-27 Microsemi Page 3 UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O S WWW . Microsemi .C OM UM4300 Ct versus Vr TYPICAL 6 f = 1 MHz Ct (pF) 4 f = 5 MHz 2 f = 10 MHz f => 100 MHz 0 1 10 100 1000 Vr (Volts) UM7300 Ct versus Vr TYPICAL 6 5 4 3 EELLEECCTTRRIICCAALLSS Ct (pF) f = 1 MHz f = 5 MHz 2 f = 10 MHz 1 f => 100 MHz 0 1 10 100 1000 Vr (Volts) Copyright 2005 Rev. 0, 2006-04-27 Microsemi Page 4 UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O S WWW . Microsemi .C OM PULSE THERMAL IMPEDANCE ( C/W) PULSE THERMAL IMPEDANCE VERSUS WIDTH TYPICAL 102 o 101 10 UM4300 0 UM7300 10-1 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 PULSE WIDTH (SEC) POWER RATING STUD MOUNTED DIODES 20 UM4300C 15 W 15 UM4300D ELECTRICALS MAX POWER DISSIPATION (W) 18 W 10 7.5 W UM7300C 6W 5 UM7300D 0 0 25 50 75 100 125 o 150 175 STUD TEMPERATURE ( C) Copyright 2005 Rev. 0, 2006-04-27 Microsemi Page 5 UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O S WWW . Microsemi .C OM UM4300 UM7300 ELECTRICALS Copyright 2005 Rev. 0, 2006-04-27 Microsemi Page 6 UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O S WWW . Microsemi .C OM UM4300/UM7300 NORMALIZED Rs versus TEMPERATURE NORMALIZED DIODE RESISTANCE 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -60 -40 -20 0 20 40 60 80 100 120 o TEMPERATURE ( C) Vf versus If TYPICAL 100 10-1 -2 ELECTRICALS If (A) 10 UM4300 10-3 UM7300 -4 10 10-5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Vf (V) Copyright 2005 Rev. 0, 2006-04-27 Microsemi Page 7 UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O S WWW . Microsemi .C OM UM4300 STYLE “A” STYLE “B” STYLE “C” STYLE “CR” MECHANICAL Copyright 2005 Rev. 0, 2006-04-27 Microsemi Page 8 UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O S WWW . Microsemi .C OM UM4300 STYLE “D” STYLE “DR” STYLE “E” STYLE “SM” MECHANICAL Copyright 2005 Rev. 0, 2006-04-27 Microsemi Page 9 UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O S WWW . Microsemi .C OM UM7300 STYLE “A” STYLE “B” STYLE “C” STYLE “CR” MECHANICAL Copyright 2005 Rev. 0, 2006-04-27 Microsemi Page 10 UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O S WWW . Microsemi .C OM UM7300 STYLE “D” STYLE “DR STYLE “E” STYLE “SM” MECHANICAL Copyright 2005 Rev. 0, 2006-04-27 Microsemi Page 11 UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O S WWW . Microsemi .C OM UM4300 STYLE “SM” FOOTPRINT MECHANICAL Copyright 2005 Rev. 0, 2006-04-27 Microsemi Page 12 UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O S WWW . Microsemi .C OM UM7300 STYLE “SM” FOOTPRINT MECHANICAL NOTES: 1. These dimensions will match the terminals and provide for additional solder fillets at the outboard ends at least as wide as the terminals themselves, assuming accuracy of placement within 0.005” 2. If the mounting method chosen requires use of an adhesive separate from the solder compound, a round (or square) spot of cement as shown should be centrally located. Copyright 2005 Rev. 0, 2006-04-27 Microsemi Page 13 UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O S WWW . Microsemi .C OM NOTES: NOTES Copyright 2005 Rev. 0, 2006-04-27 Microsemi Page 14