Small Signal Transistor Arrays UNA0217 (UN217) Transistor array to drive the small motor ■ Features ● 5 ● ● Video cameras Cameras Portable CD players Small motor drive circuits in general for electronic equipment. ■ Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO ±12 V Collector to emitter voltage VCEO ±10 V Emitter to base voltage VEBO ±7 V IC ±1 A PT* 0.5 W Junction temperature Tj 150 Storage temperature Tstg –55 to +150 Total power dissipation 7 8 9 10 0.9±0.1 6.5±0.3 12˚ (Ta=25±2˚C) Parameter Collector current 6 (0.8) 1.5±0.1 1.5+0.2 –0.1 ● 12˚ ■ Applications ● 0.2+0.1 –0.0 (0.5) 0.4±0.1 4 3 2 1 0.5±0.2 ● 45˚ ● Unit: mm Small and lightweight Low power consumption (low VCE(sat) transistor used) Low-voltage drive With 4 elements incorporated (SO–10C) 5.5±0.3 7.7±0.3 ● Note: ± marks used above: +: NPN part, –: PNP part SO10-G1 Package Internal Connection 1 10 2 9 ˚C 3 8 ˚C 4 7 5 6 * TC = 25˚C only when the elements are active Note.) The Part number in the Parenthesis shows conventional part number. 1 Small Signal Transistor Arrays ■ Electrical Characteristics UNA0217 (Ta=25±2˚C) Parameter Symbol Collector cutoff current ICBO Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat)1 Transition frequency fT Collector output capacitance Cob Forward voltage (DC) VF Conditions min typ max (NPN) VCB = 10V 1 (PNP) VCB = –10V –1 (NPN) IC = 10µA 12 (PNP) IC = –10µA –12 (NPN) IC = 1mA 10 (PNP) IC = –1mA –10 Unit µA V V (NPN) IE = 10µA 7 (PNP) IE = –10µA –7 (NPN) VCE = 1V, IC = 0.5A* 200 800 (PNP) VCE = –1V, IC = – 0.5A* 200 800 V (NPN) IC = 1A, IB = 30mA 0.3 (PNP) IC = –1A, IB = –30mA – 0.3 (NPN) VCB = 6V, IE = –50mA, f = 200MHz 150 (PNP) VCB = –6V, IE = 50mA, f = 200MHz 150 (NPN) VCB = 10V, IE = 0, f = 1MHz 50 (PNP) VCB = –10V, IE = 0, f = 1MHz 65 V MHz pF (NPN) IF = 1A 1.5 (PNP) IF = –1A –1.5 V *Pulse measurement Characteristics charts of PNP transistor block PT — Ta IC — VCE 0.6 IC — VBE –6 –4.8 VCE= –1V 0.5 –5 0.4 0.3 0.2 0.1 –3.2 IB= –14mA –2.4 –12mA –10mA –8mA –1.6 –6mA –4mA Collector current IC (A) –4.0 Collector current IC (A) Total power dissipation PT (W) Ta=25˚C 25˚C –4 Ta=75˚C –25˚C –0.4 –0.8 –1.2 –3 –2 –1 –0.8 –2mA 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 0 0 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 0 –1.6 –2.0 –2.4 Base to emitter voltage VBE (V) Small Signal Transistor Arrays UNA0217 VCE(sat) — IC VCE=–1V –3 –1 Ta=75˚C –0.3 25˚C –0.1 –25˚C –0.03 –0.01 –0.003 –0.001 –0.01 –0.03 –0.1 –0.3 –1 –3 Cob — VCB 240 500 Ta=75˚C 400 25˚C 300 –25˚C 200 100 0 –0.01 –0.03 –0.1 –0.3 –10 –1 –3 Collector output capacitance Cob (pF) IC/IB=100/3 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –10 hFE — IC 600 f=1MHz IE=0 Ta=25˚C 200 160 120 80 40 0 –0.1 –0.3 –10 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Collector current IC (A) Collector current IC (A) Characteristics charts of NPN transistor block PT — Ta IC — VCE IC — VBE 6 4.8 0.6 VCE=1V 5 0.4 0.3 0.2 3.2 IB=14mA 12mA 10mA 2.4 8mA 1.6 6mA 4mA 25˚C 4 Ta=75˚C –25˚C 3 2 1 0.8 0.1 2mA 0 0 0 20 40 60 0 80 100 120 140 160 2 VCE(sat) — IC Forward current transfer ratio hFE Ta=75˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 0 12 0.4 3 Collector current IC (A) 10 0.8 1.2 1.6 500 400 Ta=75˚C 25˚C –25˚C 200 100 0 0.01 0.03 0.1 0.3 2.4 Cob — VCB 120 300 2.0 Base to emitter voltage VBE (V) (V) VCE=1V 1 25˚C 10 hFE — IC 3 0.1 8 600 IC/IB=100/3 0.3 6 Collector to emitter voltage VCE Ambient temperature Ta (˚C) 10 4 1 3 Collector current IC (A) 10 Collector output capacitance Cob (pF) 0 Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (A) 4.0 0.5 Collector current IC (A) Total power dissipation PT (W) Ta=25˚C f=1MHz IE=0 Ta=25˚C 100 80 60 40 20 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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