Transistors with built-in Resistor UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 2.1±0.1 0.425 ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ■ Absolute Maximum Ratings 0.3 -0 0.65 1.3±0.1 0.65 0.2 (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51Ω 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ 2.2kΩ 4.7kΩ 22kΩ 2.2kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ +0.1 0.15 -0.05 Marking Symbol 6A 6B 6C 6D 6E 6F 6H 6I 6K 6L 6M 6N 6O 6P 6Q EI EW EY FC FE 3 0 to 0.1 ● UN5111 UN5112 UN5113 UN5114 UN5115 UN5116 UN5117 UN5118 UN5119 UN5110 UN511D UN511E UN511F UN511H UN511L UN511M UN511N UN511T UN511V UN511Z 1 2 0.9±0.1 ■ Resistance by Part Number ● 0.425 0.7±0.1 ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing. 2.0±0.2 ● 1.25±0.1 +0.1 ■ Features 1 : Base 2 : Emitter 3 : Collector 0.2±0.1 EIAJ : SC–70 S–Mini Type Package Internal Connection R1 C B R2 E (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C 1 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Collector cutoff current Emitter cutoff current Conditions min typ ICBO VCB = –50V, IE = 0 – 0.1 µA VCE = –50V, IB = 0 – 0.5 µA UN5111 – 0.5 UN5112/5114/511E/511D/511M/511N/511T – 0.2 UN5113 – 0.1 UN5115/5116/5117/5110 – 0.01 IEBO UN511F/511H VEB = –6V, IC = 0 –1.0 UN5118/511L/511V –2.0 UN511Z – 0.4 UN511N/511T/511V/511Z Collector to emitter voltage UN511N/511T VCBO IC = –10µA, IE = 0 VCEO IC = –2mA, IB = 0 –50 –50 35 60 UN5113/5114/511M 80 UN5115*/5116*/5117*/5110* 160 hFE VCE = –10V, IC = –5mA V –50 UN5112/511E UN511F/511D/5119/511H V –50 UN5111 460 30 UN5118/511L 20 UN511N/511T 80 400 UN511V 6 20 UN511Z 60 Collector to emitter saturation voltage UN511V Output voltage high level VCE(sat) VOH Output voltage low level UN5113 UN511D VOL UN511E Transition frequency UN511Z fT 200 IC = –10mA, IB = – 0.3mA – 0.25 IC = –10mA, IB = –1.5mA – 0.25 VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V V VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2 VCC = –5V, VB = –3.5V, RL = 1kΩ – 0.2 VCC = –5V, VB = –10V, RL = 1kΩ – 0.2 VCC = –5V, VB = –6V, RL = 1kΩ – 0.2 VCB = –10V, IE = 1mA, f = 200MHz 80 VCB = –10V, IE = 1mA, f = 200MHz 150 UN5111/5114/5115 10 UN5112/5117/511T 22 UN5113/5110/511D/511E V MHz 47 UN5116/511F/511L/511N/511Z R1 (–30%) 4.7 UN5118 0.51 UN5119 1 UN511H/511M/511V 2.2 * hFE rank classification (UN5115/5116/5117/5110) 2 mA –1.5 Collector to base voltage Input resistance Unit ICEO UN5119 Forward current transfer ratio max Rank Q R S hFE 160 to 260 210 to 340 290 to 460 (+30%) kΩ UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z ■ Electrical Characteristics (continued) Parameter Symbol (Ta=25˚C) Conditions min max UN5111/5112/5113/511L 0.8 1.0 1.2 UN5114 0.17 0.21 0.25 UN5118/5119 0.08 0.1 0.12 UN511D Resistance ratio typ 4.7 UN511E UN511F/511T UN511H Unit 2.14 R1/R2 0.47 0.17 0.22 UN511M 0.047 UN511N 0.1 UN511V 1.0 UN511Z 0.21 0.27 3 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Common characteristics chart PT — Ta Total power dissipation PT (mW) 240 200 160 120 80 40 0 0 40 80 120 160 Ambient temperature Ta (˚C) Characteristics charts of UN5111 IC — VCE VCE(sat) — IC IB=–1.0mA Collector current IC (mA) –140 Ta=25˚C –0.9mA –120 –0.8mA –0.7mA –100 –0.6mA –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 –0.3 –25˚C –0.03 –0.01 –0.1 –0.3 –10 –10000 –30 –25˚C 80 40 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) –3 25˚C 120 IO — VIN f=1MHz IE=0 Ta=25˚C –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 4 –1 Ta=75˚C VCE= –10V Collector current IC (mA) Cob — VCB 5 Ta=75˚C 25˚C –0.1 Collector to emitter voltage VCE (V) 6 hFE — IC 160 Forward current transfer ratio hFE –160 –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UN5112 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –140 –120 –100 –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 –0.3 –25˚C –0.03 –0.01 –0.1 –0.3 –1 –10 –30 300 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 4 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C –10 Collector current IC (mA) IO — VIN –10000 Output current IO (µA) Collector output capacitance Cob (pF) –3 VCE= –10V Collector current IC (mA) Cob — VCB 5 Ta=75˚C 25˚C –0.1 Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA Collector to emitter saturation voltage VCE(sat) (V) –160 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 –1 –3 –10 –30 –100 Output current IO (mA) Input voltage VIN (V) VCB (V) Characteristics charts of UN5113 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) Ta=25˚C –0.9mA –0.8mA –0.7mA –0.6mA –120 –0.5mA –100 –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC 400 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) –100 VCE= –10V Forward current transfer ratio hFE IB=–1.0mA –140 Collector to emitter saturation voltage VCE(sat) (V) –160 Ta=75˚C 300 25˚C 200 –25˚C 100 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 5 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob — VCB IO — VIN 4 3 2 –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 VIN — IO –10000 Output current IO (µA) Collector output capacitance Cob (pF) 6 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN5114 IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) –140 IB=–1.0mA –120 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –80 –0.4mA –60 –0.3mA –0.2mA –40 –0.1mA –20 Collector to emitter saturation voltage VCE(sat) (V) –100 0 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 Collector to emitter voltage VCE (V) –1 –3 –10 –10000 –30 25˚C –25˚C 100 0 –1 –100 –3 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO VO=–5V Ta=25˚C –1000 –3000 –300 –1000 –100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 4 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –30 –10 –3 –1 1 –0.3 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 6 Ta=75˚C 200 IO — VIN f=1MHz IE=0 Ta=25˚C 5 300 Collector current IC (mA) Cob — VCB 6 VCE= –10V –25˚C –0.01 –0.1 –0.3 –12 hFE — IC 400 Forward current transfer ratio hFE –160 –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.1 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UN5115 IC — VCE VCE(sat) — IC –100 IB=–1.0mA Collector current IC (mA) –140 –120 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –0.4mA –80 –0.3mA –60 –0.2mA –40 –0.1mA –20 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 Cob — VCB –30 300 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 VCE= –10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –160 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN5116 IC — VCE VCE(sat) — IC IB=–1.0mA Collector current IC (mA) –140 Ta=25˚C –0.9mA –0.8mA –120 –0.7mA –0.6mA –100 –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 Collector to emitter saturation voltage VCE(sat) (V) –100 hFE — IC 400 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) VCE= –10V Forward current transfer ratio hFE –160 –100 300 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 7 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob — VCB IO — VIN –10000 5 4 3 2 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –1 –0.4 –100 Collector to base voltage VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN5117 IC — VCE VCE(sat) — IC –100 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA Collector current IC (mA) –100 –80 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 Ta=75˚C –1 –0.3 25˚C –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Collector to emitter voltage VCE (V) –10 200 Ta=75˚C 25˚C 100 –25˚C 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 –30 300 IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –3 –10000 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 8 –1 VCE= –10V Collector current IC (mA) Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –120 –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UN5118 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 IB=–1.0mA –0.9mA –160 –0.8mA –0.7mA –120 –0.6mA –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 Cob — VCB –30 120 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –100 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 VCE= –10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 160 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN5119 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 IB=–1.0mA –0.9mA –0.8mA –0.7mA –160 –120 –80 –0.6mA –0.5mA –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 160 IC/IB=10 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) –100 VCE= –10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 120 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 9 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob — VCB f=1MHz IE=0 Ta=25˚C Output current IO (µA) 5 4 3 2 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Collector output capacitance Cob (pF) IO — VIN –10000 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –1 –0.4 –100 –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) Collector to base voltage VCB (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN5110 IC — VCE VCE(sat) — IC –100 –60 –0.2mA –40 –0.1mA –20 0 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –12 Collector to emitter voltage VCE (V) –10 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 –30 300 IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –3 –10000 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 10 –1 VCE= –10V Collector current IC (mA) Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C IB=–1.0mA –0.9mA –100 –0.8mA –0.7mA –0.6mA –0.5mA –80 –0.4mA –0.3mA Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) –120 –30 –100 VCB (V) –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UN511D IC — VCE VCE(sat) — IC –100 Ta=25˚C Collector current IC (mA) –50 –40 –0.3mA –30 –0.2mA –0.7mA –0.6mA –0.5mA –0.4mA –20 –0.1mA –10 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 0 –12 Collector to emitter voltage VCE (V) –1 –30 25˚C –25˚C 80 40 0 –1 –100 Ta=75˚C 120 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 VCE= –10V Collector current IC (mA) Cob — VCB 6 hFE — IC 160 Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA Collector to emitter saturation voltage VCE(sat) (V) –60 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –1.5 –100 VCB (V) –0.03 –2.0 –2.5 –3.0 –3.5 –4.0 –0.01 –0.1 –0.3 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN511E IC — VCE VCE(sat) — IC –100 Ta=25˚C Collector current IC (mA) –50 –40 –0.3mA –30 –0.6mA –0.5mA –0.4mA –20 –0.2mA –0.1mA –10 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 400 IC/IB=10 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) VCE=–10V Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA –0.7mA Collector to emitter saturation voltage VCE(sat) (V) –60 –100 300 200 Ta=75˚C 100 0 –1 25˚C –25˚C –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 11 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob — VCB f=1MHz IE=0 Ta=25˚C 4 3 2 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Output current IO (µA) 5 VIN — IO –100 Input voltage VIN (V) Collector output capacitance Cob (pF) IO — VIN –10000 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –1 –1.5 –100 –0.03 –2.0 –2.5 –3.0 –3.5 –4.0 –0.01 –0.1 –0.3 Input voltage VIN (V) Collector to base voltage VCB (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN511F IC — VCE VCE(sat) — IC Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA Collector current IC (mA) –200 –160 –120 –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 Collector to emitter voltage VCE (V) –10 –10000 –30 Ta=75˚C 25˚C 80 –25˚C 40 0 –1 –100 –3 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 4 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 12 –3 120 IO — VIN f=1MHz IE=0 Ta=25˚C 5 –1 VCE= –10V Collector current IC (mA) Cob — VCB 6 hFE — IC 160 Forward current transfer ratio hFE –240 –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UN511H IC — VCE VCE(sat) — IC –120 –80 IB=–0.5mA –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 IC/IB=10 –10 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 –12 Collector to emitter voltage VCE (V) –3 –30 200 160 Ta=75˚C 120 25˚C 80 –25˚C 40 0 –0.1 –0.3 –100 –300 –1000 –1 –3 –10 –30 –100 Collector current IC (mA) VIN — IO –100 f=1MHz IE=0 Ta=25˚C 4 3 2 VO=–0.2V Ta=25˚C –10 Input voltage VIN (V) 5 –10 VCE=–10V Collector current IC (mA) Cob — VCB 6 240 Forward current transfer ratio hFE Collector current IC (mA) –100 Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C Collector output capacitance Cob (pF) hFE — IC –100 –1 –0.1 1 0 –1 –3 –10 –30 Collector to base voltage –0.01 –0.1 –0.3 –100 –1 –3 –10 –30 –100 Output current IO (mA) VCB (V) Characteristics charts of UN511L IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 –160 IB=–1.0mA –120 –0.8mA –0.6mA –80 –0.4mA –40 –0.2mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC –30 –10 –3 –1 Ta=75˚C 25˚C –0.3 –25˚C –0.1 –0.03 –0.01 –1 240 IC/IB=10 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) VCE= –10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 200 160 120 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 13 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob — VCB VIN — IO –100 f=1MHz IE=0 Ta=25˚C 5 Input voltage VIN (V) Collector output capacitance Cob (pF) 6 4 3 2 VO= –0.2V Ta=25˚C –10 –1 –0.1 1 0 –1 –3 –10 –30 Collector to base voltage –0.01 –0.1 –0.3 –100 –1 –3 –10 –30 –100 Output current IO (mA) VCB (V) Characteristics charts of UN511M IC — VCE VCE(sat) — IC –10 Collector current IC (mA) 200 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA 160 120 –0.5mA 80 –0.4mA –0.3mA 40 –0.2mA –0.1mA 0 –2 –4 –6 –8 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 –25˚C –0.01 –0.003 –0.001 –1 0 –12 –3 Cob — VCB –30 400 300 25˚C –25˚C 100 0 –1 –100 –300 –1000 Ta=75˚C 200 –3 10–4 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C f=1MHz IE=0 Ta=25˚C –10 Collector current IC (mA) IO — VIN 10 VO= –0.2V Ta=25˚C –30 8 6 4 10–3 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) –10 VCE= –10V Collector current IC (mA) Collector to emitter voltage VCE (V) 10–2 10–1 –10 –3 –1 –0.3 –0.1 2 –0.03 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 14 500 IC/IB=10 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 hFE — IC –30 –100 VCB (V) 1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UN511N IC — VCE VCE(sat) — IC –10 Collector current IC (mA) –175 –150 IB=–1.0mA –125 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –75 –0.4mA –0.3mA –50 –0.2mA –25 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –1 Ta=75˚C –0.1 25˚C –25˚C –0.01 –1 –10 Cob — VCB –10000 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 –1 –1000 –10 4 3 2 –100 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –1000 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) –100 250 IO — VIN f=1MHz IE=0 Ta=25˚C 5 VCE= –10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 300 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –200 –100 –10 VO=–0.2V Ta=25˚C –10 –1 –0.1 1 0 –1 –10 –1 –0.4 –100 Collector to base voltage VCB (V) –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –1.4 Input voltage VIN (V) –1 –10 –100 Output current IO (mA) Characteristics charts of UN511T IC — VCE VCE(sat) — IC –200 Collector current IC (mA) –150 IB=–1.0mA –125 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –75 –0.4mA –50 –0.3mA –0.2mA –25 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC IC/IB=10 –1 Ta=75˚C –0.1 25˚C –25˚C –0.01 –1 300 –10 VCE=–10V Forward current transfer ratio hFE Ta=25˚C –175 Collector to emitter saturation voltage VCE(sat) (V) –10 –100 Collector current IC (mA) –1000 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 –1 –10 –100 –1000 Collector current IC (mA) 15 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z IO — VIN VIN — IO –100 VO=–5V Ta=25˚C –1000 –100 –10 –1 –0.4 –0.6 –0.8 –1 –1.2 –1 –0.1 –0.01 –0.1 –1.4 VO= –0.2V Ta=25˚C –10 Input voltage VIN (V) Output current IO (µA) –10000 Input voltage VIN (V) –1 –10 –100 Output current IO (mA) Characteristics charts of UN511V IC — VCE VCE(sat) — IC –10 IB=–1.0mA Collector current IC (mA) –10 –0.9mA –0.8mA –8 –0.7mA –0.6mA –6 –0.5mA –4 –0.4mA –0.3mA –2 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 –12 IO — VIN VO=–5V Ta=25˚C –1000 –100 –10 –1 –0.4 –0.6 –0.8 –1 –1.2 Input voltage VIN (V) 16 –100 –1000 –1.4 VO= –0.2V Ta=25˚C –10 –1 –0.1 –0.01 –0.1 –1 VCE=–10V –10 Output current IO (mA) Ta=75˚C 10 25˚C 8 6 –25˚C 4 2 0 –1 –10 Collector current IC (mA) VIN — IO –100 Input voltage VIN (V) Output current IO (µA) –10000 –10 Collector current IC (mA) Collector to emitter voltage VCE (V) 12 IC/IB=10 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –12 hFE — IC –100 –100 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UN511Z IC — VCE VCE(sat) — IC –10 Collector current IC (mA) –175 –150 IB=–1.0mA –125 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –100 –75 –0.4mA –50 –0.3mA –0.2mA –25 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –1 Ta=75˚C –0.1 25˚C –25˚C –0.01 –1 –10 Cob — VCB –10000 4 3 2 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 –1 –1000 –10 –100 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –1000 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) –100 250 IO — VIN f=1MHz IE=0 Ta=25˚C 5 VCE= –10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 300 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –200 –100 –10 VO=–0.2V Ta=25˚C –10 –1 –0.1 1 0 –1 –10 Collector to base voltage –100 VCB (V) –1 –0.4 –0.6 –0.8 –1 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –1 –10 –100 Output current IO (mA) 17