PANASONIC UN6111

Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/6118/
6119/6110/611D/611E/611F/611H/611L
Silicon PNP epitaxial planer transistor
Unit: mm
6.9±0.1
0.15
0.7
1.05 2.5±0.1
(1.45)
±0.05
0.8
4.0
■ Resistance by Part Number
●
●
●
●
●
●
●
●
●
●
●
●
●
●
UN6111
UN6112
UN6113
UN6114
UN6115
UN6116
UN6117
UN6118
UN6119
UN6110
UN611D
UN611E
UN611F
UN611H
UN611L
■ Absolute Maximum Ratings
1.0
2.5±0.5
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
2.5±0.5
14.5±0.5
+0.1
(R1)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
2.2kΩ
4.7kΩ
+0.1
0.45–0.05
1
2
3
2.5±0.1
●
0.65 max.
0.85
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
MT-1 type package, allowing supply with the radial taping.
0.45–0.05
●
0.8
■ Features
3.5±0.1
For digital circuits
1 : Emitter
2 : Collector
3 : Base
MT-1 Type Package
Internal Connection
R1
C
B
R2
E
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Collector current
IC
–100
mA
Total power dissipation
PT
400
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
1
Transistors with built-in Resistor
■ Electrical Characteristics
(Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter
cutoff
current
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
Conditions
min
typ
Unit
ICBO
VCB = –50V, IE = 0
– 0.1
µA
ICEO
VCE = –50V, IB = 0
– 0.5
µA
UN6111
– 0.5
UN6112/6114/611E/611D
– 0.2
UN6113
– 0.1
UN6115/6116/6117/6110
IEBO
VEB = –6V, IC = 0
– 0.01
UN611F/611H
–1.0
UN6119
–1.5
UN6118/611L
mA
–2.0
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–50
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
UN6111
Forward
current
transfer
ratio
35
UN6112/611E
60
UN6113/6114
80
UN6115*/6116*/6117*/6110*
hFE
VCE = –10V, IC = –5mA
UN611F/611D/6119/611H
VCE(sat)
IC = –10mA, IB = – 0.3mA
Output voltage high level
VOH
VCC = –5V, VB = – 0.5V, RL = 1kΩ
Output voltage low level
UN6113
UN611D
VOL
UN611E
Transition frequency
– 0.25
–4.9
– 0.2
VCC = –5V, VB = –3.5V, RL = 1kΩ
– 0.2
VCC = –5V, VB = –10V, RL = 1kΩ
– 0.2
VCC = –5V, VB = –6V, RL = 1kΩ
fT
V
V
VCC = –5V, VB = –2.5V, RL = 1kΩ
V
– 0.2
VCB = –10V, IE = 1mA, f = 200MHz
80
UN6111/6114/6115
10
UN6112/6117
22
UN6113/6110/611D/611E
MHz
47
UN6116/611F/611L
(–30%)
R1
4.7
UN6118
0.51
UN6119
1
UN611H
Resistance
ratio
460
20
Collector to emitter saturation voltage
Input
resistance
160
30
UN6118/611L
(+30%)
2.2
UN6111/6112/6113/611L
0.8
1.0
UN6114
0.17
0.21
0.25
UN6118/6119
0.08
0.1
0.12
UN611D
R1/R2
UN611E
1.2
3.7
4.7
5.7
1.7
2.14
2.6
UN611F
0.37
0.47
0.57
UN611H
0.17
0.22
0.27
* hFE rank classification (UN6115/6116/6117/6110)
2
max
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
kΩ
Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
500
400
300
200
100
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN6111
IC — VCE
VCE(sat) — IC
IB=–1.0mA
Collector current IC (mA)
–140
Ta=25˚C
–0.9mA
–120
–0.8mA
–0.7mA
–100
–0.6mA
–0.5mA
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
IC/IB=10
–30
–10
–3
–1
–0.3
–25˚C
–0.03
–0.01
–0.1 –0.3
–3
–10
–30
25˚C
120
–25˚C
80
40
0
–1
–100
–3
4
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
–10
Collector current IC (mA)
IO — VIN
–10000
Output current IO (µA)
Collector output capacitance Cob (pF)
–1
Ta=75˚C
VCE= –10V
Collector current IC (mA)
Cob — VCB
5
Ta=75˚C
25˚C
–0.1
Collector to emitter voltage VCE (V)
6
hFE — IC
160
Forward current transfer ratio hFE
–160
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–100
VCB (V)
–1
–0.4
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
Output current IO (mA)
3
Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UN6112
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–140
–120
–100
–0.5mA
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
–0.3
–25˚C
–0.03
–0.01
–0.1 –0.3
–1
–10
–30
300
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–100
–3
4
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
–10
Collector current IC (mA)
IO — VIN
–10000
Output current IO (µA)
Collector output capacitance Cob (pF)
–3
VCE= –10V
Collector current IC (mA)
Cob — VCB
5
Ta=75˚C
25˚C
–0.1
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
Collector to emitter saturation voltage VCE(sat) (V)
–160
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
–1
–3
–10
–30
–100
Output current IO (mA)
Input voltage VIN (V)
VCB (V)
Characteristics charts of UN6113
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
Ta=25˚C
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–120
–0.5mA
–100
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
4
–12
hFE — IC
400
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
–100
VCE= –10V
Forward current transfer ratio hFE
IB=–1.0mA
–140
Collector to emitter saturation voltage VCE(sat) (V)
–160
Ta=75˚C
300
25˚C
200
–25˚C
100
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
Cob — VCB
IO — VIN
4
3
2
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
5
VIN — IO
–10000
Output current IO (µA)
Collector output capacitance Cob (pF)
6
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN6114
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
–140
IB=–1.0mA
–120
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–100
–0.5mA
–80
–0.4mA
–60
–0.3mA
–0.2mA
–40
–0.1mA
–20
Collector to emitter saturation voltage VCE(sat) (V)
–100
0
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–0.03
Collector to emitter voltage VCE (V)
–1
–3
–10
–10000
–30
25˚C
–25˚C
100
0
–1
–100
–3
4
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
VO=–5V
Ta=25˚C
–1000
–3000
–300
–1000
–100
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
Ta=75˚C
200
IO — VIN
f=1MHz
IE=0
Ta=25˚C
5
300
Collector current IC (mA)
Cob — VCB
6
VCE= –10V
–25˚C
–0.01
–0.1 –0.3
–12
hFE — IC
400
Forward current transfer ratio hFE
–160
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–30
–10
–3
–1
1
–0.3
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–100
VCB (V)
–1
–0.4
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.1
–0.1 –0.3
–1
–3
–10
–30
–100
Output current IO (mA)
5
Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UN6115
IC — VCE
VCE(sat) — IC
–100
IB=–1.0mA
Collector current IC (mA)
–140
–120
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–100
–0.5mA
–0.4mA
–80
–0.3mA
–60
–0.2mA
–40
–0.1mA
–20
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–1
Cob — VCB
–30
300
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–100
–3
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
4
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–10
–10000
f=1MHz
IE=0
Ta=25˚C
5
–3
VCE= –10V
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–160
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN6116
IC — VCE
VCE(sat) — IC
IB=–1.0mA
Collector current IC (mA)
–140
Ta=25˚C
–0.9mA
–0.8mA
–120
–0.7mA
–0.6mA
–100
–0.5mA
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
6
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
hFE — IC
400
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
VCE= –10V
Forward current transfer ratio hFE
–160
–100
300
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
Cob — VCB
IO — VIN
–10000
5
4
3
2
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
6
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–1
–0.4
–100
Collector to base voltage VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN6117
IC — VCE
VCE(sat) — IC
–100
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Collector current IC (mA)
–100
–80
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
Ta=75˚C
–1
–0.3
25˚C
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Collector to emitter voltage VCE (V)
–3
–10
200
Ta=75˚C
25˚C
100
–25˚C
0
–1
–100
–3
4
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
5
–30
300
IO — VIN
–10000
Output current IO (µA)
Collector output capacitance Cob (pF)
–1
VCE= –10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–120
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
–1
–0.4
–0.03
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
Output current IO (mA)
7
Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UN6118
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–200
IB=–1.0mA
–0.9mA
–160
–0.8mA
–0.7mA
–120
–0.6mA
–0.5mA
–80
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–1
Cob — VCB
–30
120
Ta=75˚C
80
25˚C
–25˚C
40
0
–1
–100
–3
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
4
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–10
–10000
f=1MHz
IE=0
Ta=25˚C
5
–3
VCE= –10V
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
160
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–240
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN6119
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–200
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–160
–120
–80
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
8
–12
hFE — IC
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
160
IC/IB=10
–25˚C
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
–100
VCE= –10V
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–240
120
Ta=75˚C
80
25˚C
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
Cob — VCB
5
4
3
2
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
IO — VIN
–10000
6
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–1
–0.4
–100
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
Collector to base voltage VCB (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN6110
IC — VCE
VCE(sat) — IC
–100
–60
–0.2mA
–40
–0.1mA
–20
0
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–12
Collector to emitter voltage VCE (V)
–3
–10
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–100
–3
4
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
5
–30
300
IO — VIN
–10000
Output current IO (µA)
Collector output capacitance Cob (pF)
–1
VCE= –10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
IB=–1.0mA
–0.9mA
–100
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–80
–0.4mA
–0.3mA
Collector to emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
–120
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–100
VCB (V)
–1
–0.4
–0.03
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
Output current IO (mA)
9
Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UN611D
IC — VCE
VCE(sat) — IC
–100
Ta=25˚C
Collector current IC (mA)
–50
–40
–0.3mA
–30
–0.2mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–20
–0.1mA
–10
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
0
–12
Collector to emitter voltage VCE (V)
–1
–30
25˚C
–25˚C
80
40
0
–1
–100
Ta=75˚C
120
–3
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
4
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–10
–10000
f=1MHz
IE=0
Ta=25˚C
5
–3
VCE= –10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
160
Forward current transfer ratio hFE
IB=–1.0mA
–0.9mA
–0.8mA
Collector to emitter saturation voltage VCE(sat) (V)
–60
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–1
–1.5
–100
Collector to base voltage VCB (V)
–0.03
–2.0
–2.5
–3.0
–3.5
–4.0
–0.01
–0.1 –0.3
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN611E
IC — VCE
VCE(sat) — IC
–100
Ta=25˚C
Collector current IC (mA)
–50
–40
–0.3mA
–30
–0.6mA
–0.5mA
–0.4mA
–20
–0.2mA
–0.1mA
–10
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
10
–12
hFE — IC
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
400
IC/IB=10
–25˚C
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
VCE=–10V
Forward current transfer ratio hFE
IB=–1.0mA
–0.9mA
–0.8mA –0.7mA
Collector to emitter saturation voltage VCE(sat) (V)
–60
–100
300
200
Ta=75˚C
100
0
–1
25˚C
–25˚C
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
Cob — VCB
5
4
3
2
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
IO — VIN
–10000
6
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–1.5
–100
–0.03
–2.0
–2.5
–3.0
–3.5
–4.0
–0.01
–0.1 –0.3
Input voltage VIN (V)
VCB (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN611F
IC — VCE
VCE(sat) — IC
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
Collector current IC (mA)
–200
–160
–120
–0.5mA
–80
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
Collector to emitter voltage VCE (V)
–10
–10000
–30
Ta=75˚C
25˚C
80
–25˚C
40
0
–1
–100
–3
4
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
–3
120
IO — VIN
f=1MHz
IE=0
Ta=25˚C
5
–1
VCE= –10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
160
Forward current transfer ratio hFE
–240
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–100
VCB (V)
–1
–0.4
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
Output current IO (mA)
11
Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UN611H
IC — VCE
VCE(sat) — IC
–120
–80
IB=–0.5mA
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
IC/IB=10
–10
–1
Ta=75˚C
25˚C
–0.1
–25˚C
–0.01
–1
–12
Collector to emitter voltage VCE (V)
–3
–30
200
160
Ta=75˚C
120
25˚C
80
–25˚C
40
0
–0.1 –0.3
–100 –300 –1000
–1
–3
–10
–30
–100
Collector current IC (mA)
VIN — IO
–100
f=1MHz
IE=0
Ta=25˚C
4
3
2
VO=–0.2V
Ta=25˚C
–10
Input voltage VIN (V)
5
–10
VCE=–10V
Collector current IC (mA)
Cob — VCB
6
240
Forward current transfer ratio hFE
Collector current IC (mA)
–100
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
Collector output capacitance Cob (pF)
hFE — IC
–100
–1
–0.1
1
0
–1
–3
–10
–30
Collector to base voltage
–0.01
–0.1 –0.3
–100
–1
–3
–10
–30
–100
Output current IO (mA)
VCB (V)
Characteristics charts of UN611L
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–200
–160
IB=–1.0mA
–120
–0.8mA
–0.6mA
–80
–0.4mA
–40
–0.2mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
12
–12
hFE — IC
–30
–10
–3
–1
Ta=75˚C
25˚C
–0.3
–25˚C
–0.1
–0.03
–0.01
–1
240
IC/IB=10
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
VCE= –10V
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–240
200
160
120
Ta=75˚C
80
25˚C
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
Cob — VCB
VIN — IO
–100
f=1MHz
IE=0
Ta=25˚C
5
Input voltage VIN (V)
Collector output capacitance Cob (pF)
6
4
3
2
VO= –0.2V
Ta=25˚C
–10
–1
–0.1
1
0
–1
–3
–10
Collector to base voltage
–30
–100
VCB (V)
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
Output current IO (mA)
13