PANASONIC UNR32AT

Transistors with built-in Resistor
UNR32AT
Silicon NPN epitaxial planar type
For digital circuits
Unit: mm
 Features
0.33+0.05
–0.02
 Suitable for high-density mounting and downsizing of the equipment
 Contribute to low power consumption
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Collector current
IC
80
mA
Total power dissipation
PT
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
–55 to +125
°C
0.15 min.
5°
0.80±0.05
1.20±0.05
5°
1: Base
2: Emitter
3: Collecter
0.15 max.
Unit
0.52±0.03
Rating
(0.40) (0.40)
0 to 0.01
Symbol
2
0.15 min.
1
0.23+0.05
–0.02
1.20±0.05
0.80±0.05
3
 Absolute Maximum Ratings Ta = 25°C
Parameter
0.10+0.05
–0.02
SSSMini3-F1 Package
Marking Symbol: KZ
Internal Connection
B
R1 (22 kΩ)
C
R2
(47 kΩ)
E
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
50
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.2
mA
Forward current transfer ratio
hFE
VCE = 10 V, IC = 5 mA
400

0.25
V
Collector-emitter saturation voltage
VCE(sat)
80
IC = 10 mA, IB = 0.3 mA
Output voltage high-level
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kkΩ
Ω
Output voltage low-level
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 kkΩ
Ω
Input resistance
R1
—30%
Resistance ratio
R1 / R2
0.37
Transition frequency
fT
VCB = 10 V, IE = —2 mA, f = 200 MHz
4.9
V
0.2
V
22
+30%
k
kΩ
0.47
0.57

150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2004
SJH00109AED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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2003 SEP