Transistors with built-in Resistor UNR5154 (UN5154) Silicon PNP epitaxial planar type (0.425) Unit: mm 0.3+0.1 –0.0 For digital circuits 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 • High forward current transfer ratio hFE • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through tape packing and magazine packing 0.9+0.2 –0.1 ■ Features 0.9±0.1 3 2 0.2±0.1 1 (0.65) (0.65) 1.3±0.1 2.0±0.2 10˚ Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −30 V Collector-emitter voltage (Base open) VCEO −30 V Collector current IC −100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: EV Internal Connection R1 (10 kΩ) B R2 (47 kΩ) C E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −30 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −30 V Collector-base cutoff current (Emitter open) ICBO VCB = −30 V, IE = 0 − 0.1 Collector-emitter cutoff current (Base open) ICEO VCE = −30 V, IB = 0 − 0.5 Emitter-base cutoff current (Collector open) IEBO VEB = −3 V, IC = 0 Forward current transfer ratio hFE VCE = −10 V, IC = −5 mA Collector-emitter saturation voltage VCE(sat) Conditions VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ fT VCB = −10 V, IE = 1 mA, f = 200 MHz Input resistance R1 Resistance ratio R1/R2 Typ Max − 0.1 − 0.5 −1.2 −4.9 µA mA V V − 0.2 80 −30% Unit 80 IC = −50 mA, IB = − 0.33 mA Output voltage high-level Transition frequency Min 10 0.213 V MHz +30% kΩ Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Note) The part number in the parenthesis shows conventional part number. Publication date: December 2003 SJH00023BED 1 UNR5154 IC VCE −200 IB = −1.0 mA Ta = 25°C – 0.9 mA – 0.8 mA – 0.7 mA 200 −150 Collector current IC (mA) Total power dissipation PT (mW) VCE(sat) IC 160 – 0.6 mA – 0.5 mA −100 120 80 – 0.4 mA – 0.3 mA −50 – 0.2 mA 40 – 0.1 mA 0 0 40 80 120 160 Ambient temperature Ta (°C) 0 Forward current transfer ratio hFE 250 25°C −25°C 150 100 50 −102 −103 Collector output capacitance C (pF) (Common base, input open circuited) ob VCE = −10 V −10 −6 −8 6 5 3 2 Input voltage VIN (V) −25°C −10−2 −1 −10 0 −1 −10 −10 −1 −10 −102 −103 Collector current IC (mA) −104 VO = −5 V Ta = 25°C −103 −102 −10 1 −10 −1 −102 Output current IO (mA) 2 Ta = 75°C IO VIN 4 VO = − 0.2 V Ta = 25°C −1 25°C −10−1 f = 1 MHz IE = 0 Ta = 25°C VIN IO −10 −2 −10 −1 −12 −102 Collector-base voltage VCB (V) Collector current IC (mA) −102 −10 −1 Cob VCB Ta = 75°C 0 −1 −4 IC / IB = 10 −10 Collector-emitter voltage VCE (V) hFE IC 300 200 −2 −102 Output current IO (µA) 0 Collector-emitter saturation voltage VCE(sat) (V) PT Ta 240 SJH00023BED −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) −1.4 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. 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