Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 200 V Collector-emitter voltage (Base open) VCEO 180 V Emitter-base voltage (Collector open) VEBO 6 V Collector current IC 2 A Peak collector current ICP 3 A 25 W Collector power PC Ta = 25°C dissipation φ 3.2±0.1 15.0±0.5 13.7±0.2 4.2±0.2 • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with one screw. 1.4±0.2 1.6±0.2 Solder Dip ■ Features 2.6±0.1 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 1: Base 2: Collector 3: Emitter TO-220D-A1 Package 3 2.0 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 50 µA, IE = 0 200 V Collector-emitter voltage (Base open) VCEO IC = 5 mA, IB = 0 180 V Emitter-base voltage (Collector open) VEBO IE = 500 µA, IC = 0 Base-emitter voltage VBE VCE = 10 V, IC = 400 mA 1 V Collector-base cutoff current (Emitter open) ICBO VCB = 200 V, IE = 0 50 µA Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 50 µA 240 Forward current transfer ratio Transition frequency Min VCE = 10 V, IC = 150 mA 60 VCE = 10 V, IC = 400 mA 50 VCE(sat) IC = 500 mA, IB = 50 mA * VCE = 10 V, IC = 0.5 A, f = 1 MHz fT Typ Max 6 hFE2 hFE1 Collector-emitter saturation voltage Conditions Unit V 1 20 V MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE1 60 to 140 100 to 240 Publication date: July 2004 SJD00318AED 1 2SC5935 PC Ta Safe operation area 10 Non repetitive pulse, TC = 25°C (1) TC = Ta (2) With a 100 × 100 × 2 mm Al heat sink (3) Without heat sink 30 ICP IC Collector current IC (A) Collector power dissipation PC (W) 35 25 (1) 20 15 (2) 10 1 t = 0.5 m t = 1 ms 0.1 t = 5 ms 5 (3) 0 0 20 t=1s 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 2 0.01 1 10 100 1 000 Collector-emitter voltage VCE (V) SJD00318AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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