NEC UPA607

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA607T
P-CHANNEL MOS FET (6-PIN 2 CIRCUITS)
FOR SWITCHING
The µPA607T is a mini-mold device provided with two
PACKAGE DIMENSIONS (in millimeters)
MOS FET elements. It achieves high-density mounting
+0.1
0.32 –0.05
+0.1
0.16 –0.06
• Two MOS FET elements in package the same size as
SC-59
• Complement to µPA606T
2.8 ±0.2
FEATURES
1.5
+0.1
0.65 –0.15
and saves mounting costs.
0 to 0.1
• Automatic mounting supported
0.8
0.95
1.9
2.9 ±0.2
0.95
1.1 to 1.4
PIN CONNECTION
6
1
5
2
4
3
1.
2.
3.
4.
5.
6.
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain 1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
–50
V
Gate to Source Voltage
VGSS
+16
V
Drain Current (DC)
ID(DC)
–100
mA
ID(pulse)*
–200
mA
Total Power Dissipation
PT
300 (Total)
mW
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Drain Current (pulse)
* PW ≤ 10 ms, Duty Cycle ≤ 50 %
Document No. G11254EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
µPA607T
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
IDSS
VDS = –50 V, VGS = 0
–
–
–1.0
µA
Gate Leakage Current
IGSS
VGS = +16 V, VDS = 0
–
–
+1.0
µA
VGS(off)
VDS = –5.0 V, ID = –1.0 µA
–1.5
–1.9
–2.5
V
|yfs|
VDS = –5.0 V, ID = –10 mA
15
–
–
mS
Drain to Source On-State Resistance
RDS(on)1
VGS = –4.0 V, ID = –10 mA
–
60
100
Ω
Drain to Source On-State Resistance
RDS(on)2
VGS = –10 V, ID = –10 mA
–
40
60
Ω
VDS = –5.0 V, VGS = 0, f = 1.0 MHz
–
15
–
pF
Gate Cut-off Voltage
Forward Transfer Admittance
Input Capacitance
Ciss
Output Capacitance
Coss
–
10
–
pF
Reverse Transfer Capacitance
Crss
–
1
–
pF
Turn-On Delay Time
td(on)
–
45
–
ns
–
75
–
ns
td(off)
–
25
–
ns
tf
–
80
–
ns
Rise Time
tr
Turn-Off Delay Time
Fall Time
VGS(on) = –5.0 V, RG = 10 Ω,
VDD = –5.0 V, ID = –10 mA, RL = 500 Ω
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS
VGS
DUT
RL
Gate
voltage
waveform
10 %
VGS(ON)
90 %
VDD
ID
RG
td(on)
tr
td(off)
tf
PG.
Drain
current
waveform
0
VGS
0
10 %
10 %
ID
90 %
90 %
τ
τ = 1µs
Duty Cycle ≤ 1 %
2
µPA607T
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
PT - Total Power Dissipation - mW
240
dT - Derating Factor - %
100
80
60
40
20
20
0
40
60
80 100 120 140 160
TC - Case Temperature - ˚C
200
160
120
80
40
0
30
60
90
120 150 180
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs. DRAIN TO
SOURCE VOLTAGE
–120
–10 V
Pulsed
measurement
TRANSFER CHARACTERISTICS
–100
–8 V
–6 V
–10
–80
–60
VGS = –4 V
ID - Drain Current - mA
ID - Drain Current - mA
–100
–40
–1
TA = 150 ˚C
–0.1
75 ˚C
25 ˚C
–0.01
–20
–25 ˚C
–0.001
0
–2
–4
–6
–8
–10 –12
VDS - Drain to Source Voltage - V
–14
0
100
VDS = –5.0 V
ID = –1 µ A
–2.2
–2.0
–1.8
–1.6
–1.4
150
|yfs| - Forward Transfer Admittance - mS
VGS(off) - Gate Cut-off Voltage - V
–2.4
0
30
60
90
120
Tch - Channel Temperature - ˚C
VDS = –5.0 V
Pulsed
measurement
–5
–10
–15
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
–1.2
–30
210
50
VDS = –5.0 V
Pulsed
measurement
20
10
TA = –25 ˚C
25 ˚C
5
75 ˚C
150 ˚C
2
1
–1
–2
–5
–10 –20
ID - Drain Current - mA
–50
–100
3
100
Pulsed
measurement
ID = –1 mA
80
60
–10 mA
40
20
–4
–8
–12
–16
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance - Ω
0
RDS(on) - Drain to Source On-State Resistance - Ω
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
–20
DRAIN TO SOURCE ON-STATE RESISTANCE
vs.DRAIN CURRENT
150
VGS = –4 V
Pulsed
measurement
TA = 150 ˚C
100
75 ˚C
25 ˚C
50
–25 ˚C
0
–1
140
100
VGS = –4 V
ID = –10 mA
120
100
80
60
40
20
–30
0
30
60
90
120
Tch - Channel Temperature - ˚C
200
tr
VDD = –5.0 V
VGS = –4 V
RG = 10 Ω
td(on)
tf
20
10
td(off)
–10
–20
–50 –100 –200
ID - Drain Current - mA
–100
30
Ciss
10
Coss
3
1
Crss
0.3
–1
–2
–5 –10 –20
–50 –100
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
50
–50
VGS = 0
f = 1 MHz
0.1
0.5
150
–500
–100
ISD - Source to Drain Current - mA
td(on), tr, td(off), tf - Switching Time - ns
500
5
–5
–5
–10
–20
ID - Drain Current - mA
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
4
–2
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-State Resistance - Ω
µPA607T
VGS = 0
Pulsed
measurement
–10
–1
–0.1
–0.5
–0.7
–0.8
–0.9
–0.6
VSD - Source to Drain Voltage - V
–1.0
µPA607T
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
5
µPA607T
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11