DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA505T N-CHANNEL/P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +0.1 –0.05 • Two source common MOS FET circuits in package the same size as SC-59 2.8 ±0.2 FEATURES 0.16 +0.1 –0.06 +0.1 1.5 0.65 –0.15 The µPA505T is a mini-mold device provided with two 0 to 0.1 • Complementary MOS FETs are provided in one package. • Automatic mounting supported 0.95 0.95 1.9 0.8 1.1 to 1.4 2.9 ±0.2 PIN CONNECTION (Top View) Marking: FA ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 50/–50 V Gate to Source Voltage VGSS –16 ±20/+ V Drain Current (DC) ID(DC) –100 ±100/+ mA Drain Current (pulse) ID(pulse)* –200 ±200/+ mA Total Power Dissipation PT 300 (TOTAL) mW Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C * PW ≤ 10 ms, Duty Cycle ≤ 50 % Note The left and right values in the ratings column are correspond to N-ch and P-ch FETs, respectively. Document No. G11241EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan 1996 µPA505T ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-off Current SYMBOL IDSS TEST CONDITIONS VDS = 50/–50 V, VGS = 0 MIN. TYP. – – MAX. UNIT µA 1.0 –1.0 Gate Leakage Current IGSS –16 V, VDS = 0 VGS = ±20/+ – ±1.0 – µA –10 + Gate Cut-off Voltage VGS(off) VDS = 5.0/–5.0 V, ID = 1/–1 µA 0.8 1.4 –1.5 Forward Transfer Admittance |yfs| VDS = 5.0/–5.0 V, ID = 10/–10 mA 20 1.8 V –1.9 –2.5 – – mS 15 Drain to Source On-State Resistance RDS(on)1 VGS = 4/–4 V, ID = 10/–10 mA – 19 60 Drain to Source On-State Resistance RDS(on)2 VGS = 10/–10 V, ID = 10/–10 mA – Ω 30 15 100 40 Input Capacitance Ciss VDS = 5.0/–5.0 V – 16 VGS = 0, f = 1.0 MHz Output Capacitance Coss Ω 25 60 – pF – pF – pF – ns – ns – ns – ns 10 – 12 4 Reverse Transfer Capacitance Crss – 3 4 Turn-On Delay Time td(on) VDD = 5.0/–5.0 V, ID = 10/–10 mA – 17 VGS(on) = 5.0/–5.0 V Rise Time tr RG = 10 Ω, RL = 500 Ω 40 – 10 40 Turn-Off Delay Time td(off) – 68 100 Fall Time tf – 38 80 Marking: FA Note The left and right values in above table represent the N-ch and P-ch characteristics, respectively. 2 µPA505T SWITCHING TIME MEASUREMENT CIRCUIT AND MEASUREMENT CONDITIONS (RESISTANCE LOADED) • N-ch part DUT RL VGS Gate Voltage Waveform 0 90 % VGS(on) 10 % VDD RG 90 % ID 90 % PG. ID Drain Current Waveform VGS 0 10 % 10 % tr td(on) 0 τ tf td(off) ton toff τ = 1 µs Duty Cycle ≤ 1 % • P-ch part VGS DUT RL Gate Voltage Waveform 10 % VGS(on) 90 % VDD ID RG td(on) tr td(off) tf PG. Drain Current Waveform 0 VGS 0 10 % 10 % ID 90 % τ 90 % τ = 1 µs Duty Cycle ≤ 1 % 3 µPA505T TYPICAL CHARACTERISTICS (TA = 25 ˚C) • N-ch part DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 350 PT - Total Power Dissipation - mW Free air dT - Derating Factor - % 100 80 60 40 20 0 20 40 80 60 100 120 300 250 TO 200 TA ro 150 ne un it 100 50 140 160 0 25 TC - Case Temperature - ˚C 50 75 100 1000 VDS = 5 V Pulsed measurement ID - Drain Current - mA 4.0 V 100 150 TRANSFER CHARACTERISTICS 120 Pulsed measurement 125 TA - Ambient Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - mA L Pe 3.5 V 80 60 3.0 V 40 100 10 TA = 75 ˚C 1 25 ˚C VGS = 2.5 V 20 –25 ˚C 0.1 0 1 2 3 4 5 6 7 0 VDS - Drain to Source Voltage - V 8 100 VDS = 5 V ID = 1.0 µA |yfs| - Forward Transfer Admittance - mS VGS(off) - Gate Cut-off Voltage - V 6 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 2 1 0 30 60 90 120 Tch - Channel Temperature - ˚C 4 4 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 0 –30 2 150 VDS = 5 V TA = 75 ˚C 25 ˚C 10 –25 ˚C 1 1 10 100 ID - Drain Current - mA 1000 µPA505T 100 ID = 10 mA Pulsed measurement 50 10 5 1 1 5 50 10 100 RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1000 VGS = 10 V Pulsed measurement 500 100 50 TA = 75 ˚C 25 ˚C –25 ˚C 10 10 50 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 10 0 30 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 VGS = 10 V Pulsed measurement 20 0 –30 60 90 120 Ciss Coss 10 Crss 1 VGS = 0 f = 1 MHz 0.1 0.1 150 Tch - Channel Temperature - ˚C 100 100 ISD - Source to Drain Current - mA td(on), tr, td(off), tf - Switching Time - ns 10 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 td(off) 50 tf tr 10 10 1 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 20 1000 ID - Drain Current - mA Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-State Resistance - Ω VGS - Gate to Source Voltage - V 500 100 td(on) VDD = 5 V VGS = 5 V RG = 10 Ω 20 50 ID - Drain Current - mA 100 10 1 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD - Source to Drain Voltage - V 5 µPA505T • P-ch part DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 350 PT - Total Power Dissipation - mW Free air dT - Derating Factor - % 100 80 60 40 20 0 20 40 60 80 100 120 140 160 300 250 TO 200 TA ro 150 50 0 25 50 75 100 125 150 TA - Ambient Temperature - ˚C TRANSFER CHARACTERISTICS –100 –10 V Pulsed measurement –8 V –6 V –10 ID - Drain Current - mA ID - Drain Current - mA un it DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE –100 ne 100 TC - Case Temperature - ˚C –120 L Pe –80 –60 –40 VGS = –4 V –1 TA = 150 ˚C 75 ˚C 25 ˚C –0.1 –25 ˚C –20 –0.01 0 –2 –4 –6 –8 –10 –12 VDS = –5.0 V Pulsed measurement –14 –0.001 VDS - Drain to Source Voltage - V 0 –5 –15 –10 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = –5.0 V ID = –1 µ A –2.2 –2.0 –1.8 –1.6 –1.4 –1.2 –30 0 30 60 90 120 Tch - Channel Temperature - ˚C |yfs| - Forward Transfer Admittance - mS VGS(off) - Gate Cut-off Voltage - V –2.4 VDS = –5.0 V 50 20 TA = –25 ˚C 10 25 ˚C 5 75 ˚C 150 ˚C 2 150 1 –1 –2 –5 –10 –20 ID - Drain Current - mA 6 –50 –100 µPA505T 100 Pulsed measurement ID = –1 mA ID = –10 mA 50 –4 0 –12 –8 –16 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 150 100 VGS = –4 V Pulsed measurement TA = 150 ˚C 75 ˚C 25 ˚C 50 0 –1 –20 –25 ˚C –2 –5 –10 –20 –50 –100 ID - Drain Current - mA CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 140 VGS = –4 V ID = –10 mA 120 100 80 60 40 20 –30 VGS = 0 f = 1 MHz 50 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-State Resistance - Ω VGS - Gate to Source Voltage - V 20 Ciss 10 Coss 5 2 1 0.5 Crss 0.2 0 30 60 90 120 150 0.1 0.1 Tch - Channel Temperature - ˚C –1 –2 –5 –10 –20 –50 –100 VDS - Drain to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE SWITCHING CHARACTERISTICS tf 200 100 td(on) 50 tr 20 10 5 –5 td(off) –10 –20 –50 100 VDD = –5.0 V VGS = –4 V RG = 10 Ω ISD - Source to Drain Current - mA td(on), tr, td(off), tf - Switching Time - ns 500 –100 –200 ID - Drain Current - mA 10 1 –500 0.1 0.5 0.6 0.7 0.8 0.9 1 VSD - Source to Drain Voltage - V 7 µPA505T REFERENCE Document Name 8 Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E µPA505T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11