PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4227) SMALL MINI MOLD The µPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS amplify low noise in the VHF band to the UHF band. (Unit: mm) 2.1±0.1 FEATURES 1.25±0.1 • Low Noise 0.2 –0 6 5 4 2 3 • Built-in 2 Transistors (2 × 2SC4227) 0.65 0.65 1.3 2.0±0.2 • A Small Mini Mold Package Adopted XY |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA 1 +0.1 NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain µPA812T-T1 Taping products (3 KPCS/Reel) Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to perforation side of the tape. Remark If you require an evaluation sample, please contact an NEC Sales +0.1 Loose products (50 PCS) 0.15 –0 µPA812T PACKING STYLE 0 to 0.1 QUANTITY 0.7 PART NUMBER 0.9±0.1 ORDERING INFORMATION PIN CONFIGURATION (Top View) Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER 6 SYMBOL RATING UNIT Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 65 mA Total Power Dissipation PT 150 in 1 element 200 in 2 elements Note mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –65 to +150 ˚C Note 5 4 Q1 1 Q2 2 3 PIN CONNECTIONS 4. Emitter (Q2) 1. Collector (Q1) 5. Emitter (Q1) 2. Base (Q2) 6. Base (Q1) 3. Collector (Q2) 110 mW must not be exceeded in 1 element. The information in this document is subject to change without notice. Document No. P11465EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1995 µPA812T ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector Cutoff Current ICBO VCB = 10 V, IE = 0 0.8 µA Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 0.8 µA DC Current Gain hFE Gain Bandwidth Product VCE = 3 V, IC = 7 fT Feed-back Capacitance VCB = 3 V, IE = 0, f = 1 |S21e| Noise Figure 2 240 4.5 7.0 0.9 10 12 VCE = 3 V, IC = 7 mA, f = 1 GHz hFE1/hFE2 GHz MHzNote 2 VCE = 3 V, IC = 7 mA, f = 1 GHz NF hFE Ratio 70 VCE = 3 V, IC = 7 mA, f = 1 GHz Cre Insertion Power Gain mANote 1 dB 1.4 VCE = 3 V, IC = 7 mA A smaller value among hFE of hFE1 = Q1, Q2 A larger value among hFE of hFE2 = Q1, Q2 2.7 0.85 Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank FB GB Marking 34R 35R hFE Value 70 to 150 110 to 240 TYPICAL CHARACTERISTICS (TA = 25 °C) IC - VCE Characteristics PT - TA Characteristics Free Air 2 Collector Current IC (mA) Total Power Dissipation PT (mW) 25 200 El em en ts Pe rE 100 in To ta lem en l t 0 50 100 20 A 160 µ A µ 0 4 1 120 µ A 15 100 µ A 80 µ A 60 µ A 40µ A IB = 20 µ A 10 5 0 150 Ambient Temperature TA (°C) 0.5 IC - VBE Characteristics hFE - IC Characteristics 200 DC Current Gain hFE Collector Current IC (mA) VCE = 3 V 10 0 0.5 Base to Emitter Voltage VBE (V) 2 1.0 Collector to Emitter Voltage VCE (V) 20 1.0 VCE = 3 V 100 50 20 10 0.5 1 5 pF 10 Collector Current IC (mA) 50 dB µPA812T Cre - VCB Characteristics fr - IC Characteristics 10 Gain Bandwidth Product fT (GHz) Feed-back Capacitance Cre (pF) 5.0 f = 1 MHz 2.0 1.0 0.5 0.2 15 Insertion Power Gain l S21e l 2 (dB) 2 1 5 10 20 6 4 2 1.0 5.0 10 50 Collector to Base Voltage VCB (V) Collector Current IC (mA) l S21e l 2 - IC Characteristics l S 21e l 2 - f Characteristics 25 VCE = 3 V f = 1 GHz 10 5 0 0.5 8 0 0.5 50 Insertion Power Gain l S21e l 2 (dB) 0.1 VCE = 3 V f = 1 GHz 1 5 10 50 VCE = 3 V IC = 7 mA 20 15 10 5 0 0.1 0.2 0.5 1.0 2.0 5.0 Frequency f (GHz) Collector Current IC (mA) NF - IC Characteristics 5 VCE = 3 V f = 1 GHz Noise Figure NF (dB) 4 3 2 1 0 0.5 1.0 5.0 10 50 Collector Current IC (mA) 3 µPA812T S-PARAMETERS V CE = 3 V, I C = 1 mA FREQUENCY S 11 MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S 21 S 12 S 22 MAG ANG MAG ANG MAG ANG MAG ANG 0.966 0.947 0.878 0.866 0.833 0.809 0.767 0.704 0.659 0.630 0.609 0.582 0.562 0.547 0.549 0.548 0.536 0.523 0.506 0.522 –13.9 –25.9 –37.8 –48.5 –58.4 –71.5 –82.4 –92.8 –101.8 –110.4 –119.2 –128.2 –136.0 –142.6 –150.4 –158.0 –167.1 –172.7 –177.9 177.6 3.691 3.436 3.310 3.089 2.955 2.859 2.718 2.608 2.389 2.242 2.097 2.024 1.935 1.826 1.765 1.682 1.618 1.589 1.527 1.489 168.9 159.6 147.9 142.0 132.3 127.1 116.8 110.6 102.8 96.8 92.3 86.7 83.4 77.5 73.4 69.9 65.6 62.5 57.5 52.5 0.025 0.045 0.067 0.084 0.097 0.110 0.117 0.127 0.128 0.132 0.135 0.138 0.143 0.136 0.138 0.132 0.135 0.137 0.139 0.143 85.1 72.9 65.7 60.8 53.8 51.7 45.7 42.4 40.3 36.0 36.0 33.2 31.5 30.3 29.3 32.1 31.5 34.6 34.5 33.9 0.995 0.978 0.936 0.916 0.858 0.847 0.819 0.804 0.782 0.752 0.720 0.678 0.659 0.632 0.634 0.622 0.621 0.612 0.590 0.577 –5.1 –9.2 –14.3 –16.9 –19.4 –22.0 –23.2 –26.3 –28.3 –32.1 –33.7 –35.6 –36.1 –36.5 –37.4 –38.2 –41.1 –42.9 –45.8 –48.0 V CE = 3 V, I C = 3 mA FREQUENCY MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 4 S 11 S 21 S 12 S 22 MAG ANG MAG ANG MAG ANG MAG ANG 0.898 0.830 0.714 0.651 0.588 0.546 0.500 0.452 0.422 0.404 0.387 0.371 0.361 0.355 0.366 0.375 0.374 0.370 0.365 0.378 –22.1 –40.3 –56.9 –69.8 –81.3 –94.6 –106.0 –116.3 –125.3 –133.9 –142.2 –150.9 –157.3 –162.7 –169.0 –175.4 176.8 171.8 167.5 164.5 9.389 8.404 7.363 6.494 5.717 5.214 4.680 4.326 3.818 3.502 3.376 3.164 2.986 2.772 2.632 2.486 2.379 2.317 2.212 2.151 161.7 146.9 132.7 124.7 115.4 110.6 101.3 96.6 89.9 85.1 81.9 77.5 74.6 70.4 67.0 64.5 61.3 58.7 54.4 49.8 0.023 0.041 0.058 0.068 0.075 0.083 0.088 0.095 0.098 0.104 0.109 0.114 0.123 0.124 0.131 0.134 0.143 0.152 0.159 0.170 79.6 70.0 59.3 55.8 51.5 51.6 49.1 48.9 49.7 47.7 49.6 48.8 49.3 49.6 49.0 52.2 51.0 52.7 51.1 49.6 0.974 0.910 0.820 0.759 0.682 0.651 0.617 0.596 0.576 0.548 0.522 0.491 0.474 0.455 0.453 0.443 0.439 0.429 0.410 0.396 –9.5 –16.5 –23.1 –25.6 –27.1 –28.3 –28.4 –29.9 –31.0 –33.5 –34.3 –35.4 –35.1 –34.8 –35.0 –35.5 –37.7 –39.4 –41.7 –43.4 µPA812T S-PARAMETERS V CE = 3 V, I C = 5 mA FREQUENCY S 11 MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S 21 S 12 S 22 MAG ANG MAG ANG MAG ANG MAG ANG 0.838 0.730 0.598 0.519 0.459 0.420 0.382 0.350 0.331 0.321 0.310 0.302 0.295 0.294 0.308 0.319 0.322 0.322 0.321 0.334 –28.0 –50.0 –68.3 –81.6 –93.4 –106.1 –117.3 –127.2 –136.1 –144.4 –152.5 –160.7 –166.8 –171.5 –177.0 177.6 170.4 165.8 162.0 159.4 13.699 11.577 9.624 8.123 6.915 6.163 5.439 4.972 4.347 3.957 3.645 3.419 3.333 3.084 2.917 2.753 2.629 2.555 2.438 2.365 156.6 138.5 124.0 115.7 107.5 103.3 95.2 91.1 85.3 80.7 77.8 73.9 71.6 68.0 64.8 62.7 59.8 57.3 53.4 49.0 0.022 0.038 0.052 0.059 0.065 0.073 0.079 0.088 0.093 0.100 0.107 0.113 0.123 0.127 0.136 0.141 0.153 0.162 0.170 0.182 74.9 66.2 58.1 56.2 54.1 56.0 55.0 55.4 56.3 55.3 56.4 55.7 56.4 56.1 54.7 57.7 56.1 56.8 54.7 52.7 0.950 0.848 0.734 0.661 0.587 0.559 0.530 0.513 0.498 0.476 0.453 0.426 0.412 0.395 0.394 0.385 0.380 0.370 0.352 0.337 –12.9 –21.0 –27.2 –28.6 –28.8 –29.0 –28.3 –29.1 –29.8 –31.9 –32.5 –33.3 –32.8 –32.3 –32.5 –32.8 –34.9 –36.5 –38.7 –40.1 V CE = 3 V, I C = 7 mA FREQUENCY MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S 11 S 21 S 12 S 22 MAG ANG MAG ANG MAG ANG MAG ANG 0.775 0.638 0.502 0.424 0.371 0.339 0.310 0.289 0.276 0.273 0.266 0.263 0.260 0.260 0.275 0.288 0.294 0.295 0.297 0.309 –33.7 –58.3 –77.4 –90.9 –102.6 –114.8 –126.0 –135.6 –144.0 –152.1 –159.9 –167.8 –173.5 –177.7 177.5 172.7 166.0 161.7 158.3 156.2 17.552 14.050 11.178 9.075 7.636 6.710 5.868 5.329 4.644 4.219 3.879 3.631 3.538 3.265 3.079 2.904 2.772 2.693 2.569 2.493 151.6 131.9 117.2 109.5 102.2 98.8 91.3 87.7 82.4 78.2 75.6 72.0 69.8 66.4 63.4 61.5 59.0 56.5 52.6 48.3 0.020 0.035 0.047 0.054 0.060 0.068 0.075 0.085 0.090 0.100 0.107 0.114 0.126 0.130 0.140 0.146 0.158 0.169 0.177 0.190 75.0 65.7 58.9 58.6 57.7 60.5 59.5 60.2 60.9 59.3 61.0 59.7 59.9 59.4 58.0 60.3 58.3 58.9 56.5 54.3 0.922 0.785 0.661 0.588 0.526 0.500 0.477 0.464 0.453 0.432 0.416 0.389 0.377 0.361 0.360 0.352 0.346 0.337 0.319 0.303 –15.7 –24.3 –29.3 –29.4 –28.8 –28.1 –27.1 –27.6 –28.2 –30.1 –30.5 –31.3 –30.5 –30.2 –30.2 –30.5 –32.7 –34.1 –36.1 –37.5 5 µPA812T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2