1.0 GHz SILICON MMIC AMPLIFIER FEATURES UPC1654A • BROADBAND PERFORMANCE: 10 to 1100 MHz Noise Figure, NF (dB) • INPUT AND OUTPUT MATCHED TO 50 Ω • AVAILABLE IN CHIP OR HERMETIC PACKAGE • EXCELLENT LINEARITY Over +10 dBm Saturated Output Power • CASCADABLE FOR MULTISTAGE APPLICATIONS • HIGH RELIABILITY 10 22 9 20 8 18 7 16 VCC = 11.5 V VCC = 10 V VCC = 8 V 6 14 5 12 4 10 Associated Gain, GA (dB) NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY 0 0 1 20 50 100 200 500 1000 2000 Frequency, f (MHz) DESCRIPTION The UPC1654A Silicon Microwave Monolithic IC is designed for general purpose and IF amplifier applications. This amplifier is matched to 50 Ω and is cascadable for multi-stage applications. The UPC1654A features excellent linearity with 10 dBm saturated output power and broadband performance up to 1100 MHz. Reliability and performance uniformity are assured by NEC's stringent quality control procedures. The UPC1654A is available in a hermetically sealed package. ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 10 V, f = 500 MHz) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPC1654A 15 UNITS MIN TYP MAX ICC Operating Current mA 38 43 48 GS Small Signal Gain dB 17 19 21 BW Bandwidth (The gain is 3 dB down from the gain at 100 MHz.) MHz 950 1100 PSAT Saturated Output Power dBm 9 NF RLIN Noise Figure dB 10 5.5 Input Return Loss dB 15 18 RLOUT Output Return Loss dB 9 12 ISOL Isolation dB 24 27 RTH (J-C) Thermal Resistance (Junction to Case) °C/W 6.5 30 California Eastern Laboratories UPC1654A ABSOLUTE MAXIMUM RATINGS (TA = 25°C) SYMBOLS PARAMETERS VCC UNITS RATINGS V 12 Supply Voltage PT Total Power Dissipation2 mW 750 PIN Input Power dBm +10 TOP Operating Temperature °C -55 to +125 TSTG Storage Temperature °C -65 to +200 Note: 1. Operation in excess of any one of these parameters may result in . permanent damage. 2. At TA = +125°C. EQUIVALENT CIRCUIT VCC OUT IN GND TYPICAL PERFORMANCE CURVES (TA = 25°C) OUTPUT POWER vs. INPUT POWER, TEMPERATURE AND FREQUENCY OUTPUT POWER vs. INPUT POWER AND VOLTAGE +15 VCC = 11.5 V VCC = 10 V VCC = 8 V f = 500 MHz 12 f = 500 MHz +10 Output Power, POUT (dBm) Output Power, POUT (dBm) 16 8 4 +5 0 f = 1100 MHz -5 -10 TA = 25˚C TA = 95˚C -15 -20 0 -15 -13 -11 -9 -20 -7 -10 -15 0 -5 +5 Input Power, PIN (dBm) Input Power, PIN (dBm) CIRCUIT CURRENT vs. SUPPLY VOLTAGE SATURATED OUTPUT POWER vs. FREQUENCY 60 15 Saturated Output Power (dBm) Circuit Current, ICC (mA) VCC = 10 V 50 40 30 20 10 0 10 5 0 2 4 6 8 10 Supply Voltage, VCC (V) 12 50 100 200 500 1000 Frequency, f (MHz) 2000 UPC1654A TYPICAL PERFORMANCE CURVES (TA = 25°C) INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY OPERATING CURRENT AND LINEAR GAIN vs. AMBIENT TEMPERATURE 24 23 VCC = 10 V VCC = 10 V 44 19 42 18 17 40 16 ICC 500 MHz Linear Gain 1000 MHz Linear Gain 15 -50 0 50 100 Input Return Loss (dB) Output Return Loss (dB) Gain, GS (dB) 21 20 Operating Current, ICC (mA) 46 22 0 -10 Output -20 Input -30 -40 50 150 100 200 500 1000 2000 Frequency, f (GHz) Ambient Temperature, TA (°C) ISOLATION vs. FREQUENCY VCC = 10 V Isolation, (dB) 0 -10 -20 -30 -40 50 100 200 500 1000 2000 Frequency, f (MHz) OUTLINE DIMENSIONS (Units in mm) UPC1654A PACKAGE OUTLINE 15 (TO-33) φ9.40 MAX φ8.50 MAX 6.60 MAX 0.38 19.0 MIN LEAD CONNECTIONS 1. Output 2. VCC 3. Input 4. GND φ0.45 φ5.08 2 1 45˚ 3 4 0.8 0.8 Notes: 1. Case should be connected to ground for stable RF operation and optimum thermal dissipation. 2. All dimensions are typical unless otherwise noted. EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA CALIFORNIA EASTERN LABORATORIES, INC · DATA SUBJECT TO CHANGE WITHOUT NOTICE Headquarters · 4590 Patrick Henry Drive · Santa Clara, CA 95054-1817 · (408) 988-3500 · Telex 34-6393/FAX (408) 988-0279