DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Circuit current : ICC = 30 mA TYP. @ VCC = 3.0 V • Medium output power : PO(1dB) = +9.5 dBm TYP. @ f = 0.9 GHz PO(1dB) = +9.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +8.0 dBm TYP. @ f = 2.4 GHz : GP = 21.5 dB TYP. @ f = 0.9 GHz • Power gain GP = 20.5 dB TYP. @ f = 1.9 GHz GP = 20.5 dB TYP. @ f = 2.4 GHz • Upper limit operating frequency : fu = 2.9 GHz TYP. @ 3 dB bandwidth • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICAION • Buffer amplifiers on 1.9 to 2.4 GHz mobile communications system ORDERING INFORMATION Part Number µ PC8182TB-E3 Package 6-pin super minimold Marking C3F Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPC8182TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10206EJ01V0DS (1st edition) (Previous No. P14543EJ2V0DS00) Date Published December 2002 CP(K) Printed in Japan The mark • shows major revised points. NEC Compound Semiconductor Devices 1999, 2002 µPC8182TB PIN CONNECTIONS 3 2 1 C3F (Top View) (Bottom View) 4 4 3 5 5 2 6 6 1 Pin No. Pin Name 1 INPUT 2 GND 3 GND 4 OUTPUT 5 GND 6 VCC PRODUCT LINE-UP (TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω) Part No. µPC8182TB µPC2762T fu (GHz) PO (1 dB) (dBm) GP (dB) ICC (mA) 2.9 +9.5 @ f = 0.9 GHz 21.5 @ f = 0.9 GHz 30.0 6-pin super minimold C3F +9.0 @ f = 1.9 GHz 20.5 @ f = 1.9 GHz +8.0 @ f = 2.4 GHz 20.5 @ f = 2.4 GHz +8.0 @ f = 0.9 GHz 13.0 @ f = 0.9 GHz 26.5 6-pin minimold C1Z +7.0 @ f = 1.9 GHz 15.5 @ f = 1.9 GHz +9.5 @ f = 0.9 GHz 20.0 @ f = 0.9 GHz +6.5 @ f = 1.9 GHz 21.0 @ f = 1.9 GHz +11.5 @ f = 0.9 GHz 21.0 @ f = 0.9 GHz +9.5 @ f = 1.5 GHz 21.0 @ f = 1.5 GHz +8.0 @ f = 0.9 GHz 19.0 @ f = 0.9 GHz +7.0 @ f = 1.9 GHz 21.0 @ f = 1.9 GHz +7.0 @ f = 2.4 GHz 22.0 @ f = 2.4 GHz 2.9 µPC2762TB µPC2763T 2.7 µPC2763TB µPC2771T 2.2 µPC2771TB µPC8181TB 4.0 Package 6-pin super minimold 27.0 6-pin minimold 36.0 6-pin minimold C2H 6-pin super minimold 23.0 6-pin super minimold Caution The package size distinguishes between minimold and super minimold. Data Sheet PU10206EJ01V0DS C2A 6-pin super minimold Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. 2 Marking C3E µPC8182TB SYSTEM APPLICATION EXAMPLE Digital cellular telephone RX DEMOD. I Q ÷N PLL SW PLL I 0˚ Phase shifter TX PA : µ PC8182TB applicable 90˚ Q Caution The insertion point is different due to the specifications of conjunct devices. Data Sheet PU10206EJ01V0DS 3 µPC8182TB PIN EXPLANATION Pin No. Pin Name 1 4 INPUT Applied Voltage (V) Pin Voltage Note (V) – 0.99 OUTPUT Voltage as same as VCC through external inductor – Function and Applications Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuit is designed to cancel the deviations of hFE and resistance. This pin must be coupled to signal source with capacitor for DC cut. 6 Signal output pin. The inductor must be attached between VCC and output pins to supply current to the internal output transistors. 4 1 6 VCC 2.7 to 3.3 – Power supply pin, which biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. 2 3 5 GND 0 – Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. Note Pin voltage is measured at VCC = 3.0 V. 4 Internal Equivalent Circuit Data Sheet PU10206EJ01V0DS 3 GND 2 5 GND µPC8182TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Ratings Unit Supply Voltage VCC TA = +25°C, pin 4 and pin 6 3.6 V Total Circuit Current ICC TA = +25°C 60 mA Power Dissipation PD TA = +85°C 270 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin +10 dBm Note TA = +25°C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage VCC 2.7 3.0 3.3 V Operating Ambient Temperature TA −40 +25 +85 °C Data Sheet PU10206EJ01V0DS Remarks Same voltage should be applied to pin 4 and pin 6. − 5 µPC8182TB ELECTRICAL CHARACTERISTICS (TA = +25°°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit − 30.0 38.0 mA dB Circuit Current ICC No signal Power Gain GP f = 0.9 GHz 19.0 21.5 25.0 f = 1.9 GHz 18.0 20.5 24.0 f = 2.4 GHz 18.0 20.5 24.0 f = 0.9 GHz − 4.5 6.0 f = 1.9 GHz − 4.5 6.0 f = 2.4 GHz − 5.0 6.5 3 dB down below from gain at f = 0.1 GHz 2.6 2.9 − GHz f = 0.9 GHz 28 33 − dB f = 1.9 GHz 27 32 − f = 2.4 GHz 26 31 − f = 0.9 GHz 5 8 − f = 1.9 GHz 7 10 − f = 2.4 GHz 9 12 − f = 0.9 GHz 7 10 − f = 1.9 GHz 8 11 − f = 2.4 GHz 11 14 − f = 0.9 GHz +7.0 +9.5 − f = 1.9 GHz +6.5 +9.0 − f = 2.4 GHz +5.5 +8.0 − f = 0.9 GHz, Pin = −5 dBm − +11.0 − f = 1.9 GHz, Pin = −5 dBm − +10.5 − f = 2.4 GHz, Pin = −5 dBm − +10.0 − Noise Figure Upper Limit Operating Frequency Isolation Input Return Loss Output Return Loss Gain 1 dB Compression Output Power Saturated Output Power 6 NF fu ISL RLin RLout PO(1dB) PO(sat) Data Sheet PU10206EJ01V0DS dB dB dB dBm dBm µPC8182TB TEST CIRCUITS VCC 1 000 pF C3 L 6 50 Ω C1 IN C2 4 1 50 Ω OUT 1 000 pF 1 000 pF 2, 3, 5 COMPONENTS OF TEST CIRCUIT EXAMPLE OF ACTUAL APPLICATION COMPONENTS FOR MEASURING ELECTRICAL CHARACTERISTICS Type Value C1, C2 Bias Tee 1 000 pF C3 Capacitor 1 000 pF L Bias Tee 1 000 nH Type Value Operating Frequency C1 to C3 Chip capacitor 1 000 pF 100 MHz or higher L Chip inductor 100 nH 100 MHz or higher 10 nH 2.0 GHz or higher INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the Vcc pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port-impedance higher to get enough gain. In this case, large inductance and Q is suitable. For above reason, select an inductance of 100 Ω or over impedance in the operating frequency. The gain is a peak in the operating frequency band, and suppressed at lower frequencies. The recommendable inductance can be chosen from example of actual application components list as shown above. CAPACITORS FOR THE VCC, INPUT, AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the Vcc pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the Vcc pin is used to minimize ground impedance of Vcc pin. So, stable bias can be supplied against Vcc fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2πRfc). Data Sheet PU10206EJ01V0DS 7 µPC8182TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD AMP-2 3 Top View 1 2 IN OUT C C 6 L 5 4 C 3F → Mounting direction VCC C COMPONENT LIST Notes 1. 30 × 30 × 0.4 mm double-sided copper-clad polyimide board. Value 8 C 1 000 pF L Example: 10 nH 2. Back side: GND pattern 3. Solder plated on pattern 4. : Through holes Data Sheet PU10206EJ01V0DS µPC8182TB TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 40 40 No Signal 35 VCC = 3.0 V No Signal Circuit Current ICC (mA) Circuit Current ICC (mA) 35 30 25 20 15 10 30 25 20 15 10 5 5 0 0 1 2 3 0 −60 −40 4 VCC = 3.0 V VCC = 3.3 V GP +80 +100 VCC = 3.0 V 20 VCC = 2.7 V 18 16 VCC = 3.3 V VCC = 3.0 V 4 14 3 12 0.1 TA = −40˚C 22 Power Gain GP (dB) 22 Power Gain GP (dB) +40 +60 24 24 20 TA = +25˚C 18 TA = +85˚C 16 14 NF VCC = 2.7 V 0.3 1.0 12 0.1 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) ISOLATION vs. FREQUENCY INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY 0 0 VCC = 3.0 V Input Return Loss RLin (dB) Output Return Loss RLout (dB) VCC = 3.0 V −10 Isolation ISL (dB) +20 POWER GAIN vs. FREQUENCY NOISE FIGURE, POWER GAIN vs. FREQUENCY Noise Figure NF (dB) 0 Operating Ambient Temperature TA (˚C) Supply Voltage VCC (V) 5 −20 −20 −30 −40 −50 0.1 0.3 1.0 3.0 RLin −10 −20 RLout −30 −40 −50 0.1 Frequency f (GHz) 0.3 1.0 3.0 Frequency f (GHz) Data Sheet PU10206EJ01V0DS 9 µPC8182TB OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER +15 +15 f = 0.9 GHz +10 VCC = 3.0 V VCC = 3.3 V +5 Output Power Pout (dBm) Output Power Pout (dBm) +10 f = 0.9 GHz VCC = 2.7 V 0 VCC = 3.0 V −5 −10 −15 −25 −50 −40 −30 −20 −10 −15 −40 −30 −20 −10 0 +10 OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER +15 f = 1.9 GHz +10 VCC = 3.0 V f = 1.9 GHz VCC = 3.3 V VCC = 3.0 V 0 −5 VCC = 2.7 V −10 −15 +5 TA = −40˚C TA = +25˚C 0 −5 TA = +85˚C −10 −15 −20 −25 −50 −40 −30 −20 −10 −25 −50 +10 0 −40 −30 −20 −10 0 +10 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER +15 +15 f = 2.4 GHz f = 2.4 GHz +10 VCC = 3.0 V Output Power Pout (dBm) Output Power Pout (dBm) −10 Input Power Pin (dBm) −20 VCC = 3.3 V +5 VCC = 2.7 V 0 VCC = 3.0 V −5 −10 −15 −25 −50 +5 0 TA = −40˚C TA = +25˚C TA = +85˚C −5 −10 −15 −20 −20 −40 −30 −20 −10 0 +10 −25 −50 −40 −30 −20 −10 Input Power Pin (dBm) Input Power Pin (dBm) 10 TA = −40˚C Input Power Pin (dBm) +5 +10 TA = +85˚C −5 −25 −50 +10 0 Output Power Pout (dBm) Output Power Pout (dBm) +10 TA = +25˚C 0 −20 −20 +15 +5 Data Sheet PU10206EJ01V0DS 0 +10 OUTPUT POWER vs. INPUT POWER +15 f = 0.9 GHz +5 0 f = 2.4 GHz f = 1.9 GHz −5 −10 −15 −20 3rd Order Intermoduration Distortion IM3 (dBc) −25 −50 −40 −30 −20 −10 +10 0 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE −60 f1 = 900 MHz f2 = 902 MHz −50 VCC = 3.3 V −40 VCC = 3.0 V −30 VCC = 2.7 V −20 −10 0 −15 −10 −5 0 +5 +10 Input Power Pin (dBm) Output Power of Each Tone PO(each) (dBm) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE −60 f1 = 1 900 MHz f2 = 1 902 MHz −50 VCC = 3.3 V −40 −30 VCC = 3.0 V −20 VCC = 2.7 V −10 0 −15 −10 −5 0 +5 +10 3rd Order Intermoduration Distortion IM3 (dBc) Output Power Pout (dBm) +10 VCC = 3.0 V 3rd Order Intermoduration Distortion IM3 (dBc) µPC8182TB −60 f1 = 2 400 MHz f2 = 2 402 MHz −50 VCC = 3.3 V −40 VCC = 3.0 V −30 VCC = 2.7 V −20 −10 0 −15 Output Power of Each Tone PO(each) (dBm) −10 −5 0 +5 +10 Output Power of Each Tone PO(each) (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10206EJ01V0DS 11 µPC8182TB SMITH CHART (VCC = Vout = 3.0 V) S11-FREQUENCY 0.1 G 3.0 G 1.0 G S22-FREQUENCY 0.1 G 1.0 G 3.0 G 12 Data Sheet PU10206EJ01V0DS µPC8182TB S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.csd-nec.com/ Data Sheet PU10206EJ01V0DS 13 µPC8182TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 2.0±0.2 1.25±0.1 14 Data Sheet PU10206EJ01V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.9±0.1 0.1 MIN. µPC8182TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC pin. (4) The inductor must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10206EJ01V0DS 15 µPC8182TB • The information in this document is current as of December 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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M8E 00. 4 - 0110 16 Data Sheet PU10206EJ01V0DS µPC8182TB Business issue NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: [email protected] NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-528-0302 TEL: +82-2-528-0301 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Technical issue NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ Sales Engineering Group, Sales Division E-mail: [email protected] FAX: +81-44-435-1918 0209