NEC UPC2708TB_1

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC2708TB
5 V, SUPER MINIMOLD SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The µPC2708TB is a silicon monolithic integrated circuit designed as buffer amplifier for BS/CS tuners. This IC is
packaged in super minimold package which is smaller than conventional minimold.
The µPC2708TB has compatible pin connections and performance to µPC2708T of conventional minimold
version. So, in the case of reducing your system size, µPC2708TB is suitable to replace from µPC2708T.
This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
•
•
•
•
•
•
High-density surface mounting
Wideband response
Medium output power
Supply voltage
Power gain
Port impedance
: 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
: fu = 2.9 GHz TYP. @ 3 dB bandwidth
: PO(sat) = +10 dBm TYP. @ f = 1 GHz with external inductor
: VCC = 4.5 to 5.5 V
: GP = 15 dB TYP. @ f = 1 GHz
: input/output 50 Ω
APPLICATIONS
• 1st IF amplifiers in BS/CS converters, etc.
• 1st IF stage buffer in BS/CS tuners, etc.
ORDERING INFORMATION
Part Number
µPC2708TB-E3
Package
6-pin super minimold
Marking
Supplying Form
C1D
Embossed tape 8 mm wide.
1, 2, 3 pins face the perforation side of the tape.
Qty 3 kpcs/reel.
Remark To order evaluation samples, please contact your local NEC sales office (Part number for sample order:
µPC2708TB).
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13442EJ3V0DS00 (3rd edition)
Date Published November 2000 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1998, 2000
µPC2708TB
PIN CONNECTIONS
3
2
1
C1D
(Top View)
(Bottom View)
Pin No.
Pin Name
1
INPUT
4
4
3
2
GND
5
5
2
3
GND
6
6
1
4
OUTPUT
5
GND
6
VCC
PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
(TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
Part No.
fu
(GHz)
PO(sat)
(dBm)
GP
(dB)
NF
(dB)
ICC
(mA)
2.9
+10.0
15
6.5
@f = 1 GHz
26
5
@f = 1 GHz
25
3.5
@f = 0.5 GHz
22
6.0
@f = 1 GHz
25
µPC2708T
µPC2708TB
µPC2709T
µPC2709TB
2.3
+11.5
23
µPC2710T
µPC2710TB
1.0
+13.5
33
µPC2776T
µPC2776TB
Remark
2.7
+8.5
23
Package
6-pin minimold
C1D
6-pin super minimold
6-pin minimold
C1E
6-pin super minimold
6-pin minimold
C1F
6-pin super minimold
6-pin minimold
C2L
6-pin super minimold
Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Caution The package size distinguishes between minimold and super minimold.
2
Marking
Data Sheet P13442EJ3V0DS00
µPC2708TB
SYSTEM APPLICATION EXAMPLE
EXAMPLE OF DBS CONVERTERS
BS Antenna
(DBS ODU)
RF Amp.
Mixer
µ PC2711TB
µ PC2712TB
IF Amp.
Parabola
Antenna
To IDU
µPC2708TB
Oscillator
EXAMPLE OF 2.4 GHz BAND RECIEVER
RX
DEMOD.
PLL
I
Q
PLL
SW
I
0°
Driver
TX
φ
PA
µPC2708TB
90°
Q
Data Sheet P13442EJ3V0DS00
3
µPC2708TB
PIN EXPLANATION
Pin
No.
Pin Name
1
INPUT
4
OUTPUT
6
2
3
5
VCC
GND
Applied
Voltage (V)
–
Voltage
as same
as VCC
through
external
inductor
4.5 to 5.5
0
Pin
Voltage
Function and Applications
1.16
–
–
–
Signal input pin. A internal
matching circuit, configured with
resistors, enables 50 Ω
connection over a wide band.
A multi-feedback circuit is
designed to cancel the
deviations of hFE and resistance.
This pin must be coupled to
signal source with capacitor for
DC cut.
Signal output pin. The inductor
must be attached between VCC
and output pins to supply
current to the internal output
transistors.
Power supply pin, which biases
the internal input transistor.
This pin should be externally
equipped with bypass capacitor
to minimize its impedance.
Ground pin. This pin should be
connected to system ground
with minimum inductance.
Ground pattern on the board
should be formed as wide as
possible.
All the ground pins must be
connected together with wide
ground pattern to decrease
impedance difference.
Note Pin voltage is measured at VCC = 5.0 V
4
Internal Equivalent Circuit
Note
(V)
Data Sheet P13442EJ3V0DS00
6 VCC
4 OUT
IN 1
3
GND
2 5
GND
µPC2708TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25°C, Pin 4 and 6
6
V
Total Circuit Current
ICC
TA = +25°C
60
mA
Power Dissipation
PD
Mounted on doublesided copper clad
50 × 50 × 1.6 mm epoxy glass PWB (TA = +85°C)
270
mW
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Input Power
Pin
+10
dBm
TA = +25°C
RECOMMENDED OPERATING RANGE
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Remark
Supply Voltage
VCC
4.5
5.0
5.5
V
The same voltage should be applied
to pin 4 and 6.
Operating Ambient Temperature
TA
−40
+25
+85
°C
ELECTRICAL CHARACTERISTICS (TA = +25°°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
20
26
33
mA
Circuit Current
ICC
No input Signal
Power Gain
GP
f = 1 GHz
13.0
15.0
18.5
dB
f = 1 GHz, Pin = 0 dBm
+7.5
+10.0
–
dBm
–
6.5
8.0
dB
3 dB down below flat gain at
f = 0.1 GHz
2.7
2.9
–
GHz
Saturated Output Power
Noise Figure
Upper Limit Operating Frequency
PO(sat)
NF
fu
f = 1 GHz
Isolation
ISL
f = 1 GHz
18
23
–
dB
Input Return Loss
RLin
f = 1 GHz
8
11
–
dB
Output Return Loss
RLout
f = 1 GHz
16
20
–
dB
Gain Flatness
∆GP
f = 0.1 to 2.6 GHz
–
±0.8
–
dB
Data Sheet P13442EJ3V0DS00
5
µPC2708TB
TEST CIRCUIT
VCC
1 000 pF
C3
L
6
50 Ω
C1
IN
C2
4
1
1 000 pF
50 Ω
OUT
1 000 pF
2, 3, 5
COMPONENTS OF TEST CIRCUIT
FOR MEASURING ELECTRICAL
EXAMPLE OF ACTURAL APPLICATION COMPONENTS
CHARACTERISTICS
Type
Value
C1, C2
Bias Tee
1 000 pF
C3
Capacitor
1 000 pF
L
Bias Tee
1 000 nH
Type
Value
Operating Frequency
C1 to C3
Chip Capacitor
1 000 pF
100 MHz or higher
L
Chip Inductor
300 nH
10 MHz or higher
100 nH
100 MHz or higher
10 nH
1.0 GHz or higher
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output
transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as
listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get
enough gain. In this case, large inductance and Q is suitable.
CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS
Capacitors of 1000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for
the input and output pins.
The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias
can be supplied against VCC fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1000 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2 πRfc).
6
Data Sheet P13442EJ3V0DS00
µPC2708TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
AMP-2
3
Top View
1D
1
2
IN
OUT
C
6
L
5
4
C
C
Mounting Direction
VCC
C
COMPONENT LIST
Value
C
1 000 pF
L
300 nH
Notes
1. 30 × 30 × 0.4 mm double sided copper clad polyimide board.
2. Back side: GND pattern
3. Solder plated on pattern
4.
: Through holes
For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATION OF
SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P12152E).
Data Sheet P13442EJ3V0DS00
7
µPC2708TB
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C)
CIRCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
40
40
35
No input signal
35 VCC = 5.0 V
30
30
Circuit Current ICC (mA)
Circuit Current ICC (mA)
No input signal
25
20
15
10
5
25
20
15
10
5
0
–60 –40 –20
0
+20 +40 +60 +80 +100
Operating Ambient Temperature TA (°C)
0
0
1
2
3
4
Supply Voltage VCC (V)
5
6
NOISE FIGURE, POWER GAIN
vs. FREQUENCY
20
POWER GAIN vs. FREQUENCY
20
VCC = 5.0 V
9
7
6
TA = –40°C
GP
15
VCC = 5.5 V VCC = 5.0 V
10
VCC = 4.5 V
NF
VCC = 4.5 V
VCC = 5.0 V
Power Gain GP (dB)
8
Power Gain GP (dB)
Noise Figure NF (dB)
VCC = 5.5 V
TA = +85°C
TA = +25°C
15
TA = +85°C
TA = –40°C
TA = +25°C
5
5
0.1
0.3
1.0
Frequency f (GHz)
10
0.1
3.0
0.3
1.0
Frequency f (GHz)
INPUT RETURN LOSS, OUTPUT RETURN LOSS
vs. FREQUENCY
ISOLATION vs. FREQUENCY
0
0
VCC = 5.0 V
VCC = 5.0 V
Input Return Loss RLin (dB)
Output Return Loss RLout (dB)
Isolation ISL (dB)
–10
–20
–30
–40
–50
0.1
8
3.0
0.3
1.0
Frequency f (GHz)
3.0
–10
RLin
–20
RLout
–30
–40
0.1
Data Sheet P13442EJ3V0DS00
0.3
1.0
Frequency f (GHz)
3.0
µPC2708TB
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
+15
+15
f = 1.0 GHz
f = 1.0 GHz
VCC = 5.0 V
VCC = 5.5 V
VCC = 5.0 V
+5
0
VCC = 4.5 V
–5
–10
–15
+5
–25
–20 –15 –10
–5
Input Power Pin (dBm)
0
0
–5
–10
OUTPUT POWER vs. INPUT POWER
–25
–20 –15 –10
–5
Input Power Pin (dBm)
0
+5
OUTPUT POWER vs. INPUT POWER
+15
VCC = 5.0 V
f = 2.0 GHz
f = 1.0 GHz
+10
VCC = 5.5 V
+5
VCC = 5.0 V
VCC = 4.5 V
0
–5
–10
Output Power Pout (dBm)
+10
Output Power Pout (dBm)
TA = –40°C
–20
–30
+5
+15
–15
+5
f = 2.0 GHz
0
f = 2.9 GHz
–5
–10
–15
–20
–30
–25
–20 –15 –10
–5
Input Power Pin (dBm)
0
–20
–30
+5
Pin = 0 dBm
VCC = 5.5 V
VCC = 5.0 V
+10
VCC = 4.5 V
+5
0
0.1
0.3
1.0
Frequency f (GHz)
3.0
3rd Order Intermodulation Distotion IM3 (dBc)
+15
–25
–20 –15 –10
–5
Input Power Pin (dBm)
0
+5
3RD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
SATURATED OUTPUT POWER vs. FREQUENCY
Saturated Output Power PO (sat) (dBm)
TA = +25°C
–15
–20
–30
Remark
TA = +85°C
+10
Output Power Pout (dBm)
Output Power Pout (dBm)
+10
60
f1 = 1 .000 GHz
f2 = 1 .002 GHz
50
VCC = 5.0 V
40
VCC = 5.5 V
30
VCC = 4.5 V
20
10
–10 –8 –6 –4 –2 0 +2 +4 +6 +8 +10
Output Power of Each Tone PO (each) (dBm)
The graphs indicate nominal characteristics.
Data Sheet P13442EJ3V0DS00
9
µPC2708TB
S-PARAMETERS (TA = +25°C, VCC = Vout = 5.0 V)
S11-FREQUENCY
1.0 GHz
2.0 GHz
0.1 GHz
3.0 GHz
S22-FREQUENCY
3.0 GHz 0.1 GHz
2.0 GHz
10
Data Sheet P13442EJ3V0DS00
µPC2708TB
TYPICAL S-PARAMETER VALUES (TA = +25°C)
VCC = Vout = 5.0 V, ICC = 27 mA
FREQUENCY
MHz
S21
S11
S12
S22
K
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100.0000
0.039
138.9
5.815
–4.8
0.077
–0.8
0.051
0.9
1.34
200.0000
0.053
119.7
5.822
–9.8
0.075
–1.5
0.048
1.4
1.36
300.0000
0.069
106.7
5.815
–14.3
0.074
–0.6
0.049
5.9
1.38
400.0000
0.088
97.2
5.813
–18.8
0.074
–0.5
0.054
8.9
1.36
500.0000
0.105
91.6
5.794
–23.8
0.072
–1.1
0.054
8.8
1.39
600.0000
0.123
84.9
5.823
–28.4
0.071
–0.6
0.056
10.4
1.40
700.0000
0.144
79.7
5.871
–33.0
0.070
0.1
0.060
11.5
1.40
800.0000
0.164
74.7
5.890
–38.2
0.071
0.5
0.065
11.6
1.37
900.0000
0.186
70.7
5.938
–42.8
0.073
2.3
0.072
11.1
1.34
1000.0000
0.205
66.1
5.960
–47.6
0.070
1.0
0.074
8.2
1.36
1100.0000
0.226
61.7
6.072
–52.7
0.069
3.3
0.075
9.4
1.34
1200.0000
0.245
57.7
6.097
–57.5
0.070
4.4
0.082
5.6
1.31
1300.0000
0.263
53.7
6.174
–63.0
0.067
2.5
0.085
0.6
1.33
1400.0000
0.286
48.6
6.275
–68.4
0.069
5.0
0.091
–4.6
1.28
1500.0000
0.308
44.3
6.371
–74.3
0.070
5.4
0.092
–8.2
1.24
1600.0000
0.328
40.7
6.419
–79.8
0.066
7.1
0.097
–12.6
1.26
1700.0000
0.344
36.2
6.470
–85.9
0.067
5.6
0.096
–19.6
1.23
1800.0000
0.364
31.0
6.555
–92.1
0.069
8.2
0.100
–23.9
1.18
1900.0000
0.382
26.0
6.542
–98.3
0.070
8.4
0.100
–32.0
1.15
2000.0000
0.395
21.2
6.570
–104.7
0.070
8.7
0.101
–38.9
1.13
2100.0000
0.405
16.8
6.528
–111.3
0.070
10.1
0.100
–47.2
1.12
2200.0000
0.417
11.8
6.527
–118.5
0.071
9.4
0.096
–57.2
1.09
2300.0000
0.427
6.6
6.438
–124.7
0.072
9.5
0.098
–66.1
1.09
2400.0000
0.431
2.2
6.336
–131.3
0.071
10.7
0.095
–76.5
1.09
2500.0000
0.431
–3.0
6.247
–138.1
0.072
12.8
0.098
–86.1
1.09
2600.0000
0.434
–8.2
6.127
–145.0
0.071
15.4
0.094
–99.9
1.10
2700.0000
0.423
–12.3
5.952
–151.7
0.071
14.5
0.088
–116.7
1.14
2800.0000
0.419
–17.1
5.816
–158.2
0.070
16.1
0.081
–134.4
1.18
2900.0000
0.408
–21.5
5.619
–165.0
0.073
15.3
0.074
–149.7
1.19
3000.0000
0.400
–26.2
5.354
–171.5
0.074
17.1
0.065
–170.3
1.24
3100.0000
0.386
–29.3
5.134
–177.4
0.075
17.1
0.053
172.8
1.28
Data Sheet P13442EJ3V0DS00
11
µPC2708TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
2.0±0.2
1.25±0.1
12
Data Sheet P13442EJ3V0DS00
0.15+0.1
–0.05
0 to 0.1
0.7
0.9±0.1
0.1 MIN.
µPC2708TB
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to VCC line.
(4) The inductor must be attached between VCC and output pins. The inductance value should be determined in
accordance with desired frequency.
(5) The DC cut capacitor must be attached to input and output pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235°C or below
Time: 30 seconds or less (at 210°C)
Note
Count: 3, Exposure limit: None
IR35-00-3
VPS
Package peak temperature: 215°C or below
Time: 40 seconds or less (at 200°C)
Note
Count: 3, Exposure limit: None
VP15-00-3
Wave Soldering
Soldering bath temperature: 260°C or below
Time: 10 seconds or less
Note
Count: 1, Exposure limit: None
WS60-00-1
Partial Heating
Pin temperature: 300°C
Time: 3 seconds or less (per side of device)
Note
Exposure limit: None
–
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution
Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Data Sheet P13442EJ3V0DS00
13
µPC2708TB
[MEMO]
14
Data Sheet P13442EJ3V0DS00
µPC2708TB
[MEMO]
Data Sheet P13442EJ3V0DS00
15
µPC2708TB
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
• The information in this document is current as of November, 2000. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
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purposes in semiconductor product operation and application examples. The incorporation of these
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4