DATA SHEET MOS INTEGRATED CIRCUIT µPD3734A 2660 PIXELS CCD LINEAR IMAGE SENSOR The µPD3734A is a high sensitivity CCD (Charge Coupled Device) linear image sensor which changes optical images to electrical signal. The µPD3734A has 2660 pixels and an output amplifier which has high gain and wide output range, but low noise. Built-in sample and hold circuit converts and outputs independent signal from CCD register in every pixel to continuous video signal. So it is easy to interface to A/D converter or Bi-level converter. FEATURES • Valid photocell : 2660 pixels • Photocell’s pitch : 11 µm • High sensitivity : 70 V/lx·s TYP. • Peak response wavelength : 550 nm (green) • Resolution : 12 dot/mm 300 dpi A4 (210 × 297 mm) size (shorter side) US letter (8.5” × 11”) size (shorter side) • Power supply : +12 V • Drive clock level : CMOS output under 5 V operation • High speed scan : 0.54 ms/line (S/H in used) • Built-in circuit : Sample and hold circuit Reset feed-through level clamp circuit Clamp pulse generation circuit Voltage amplifier : A quarter of the µPD3734 • Low noise • Low image lag : 1 % MAX. • Pin assign : Compatible with the µPD3734 ORDERING INFORMATION Part Number Package µPD3734ACY CCD linear image sensor 22-pin plastic DIP (400 mil) The information in this document is subject to change without notice. Document No. S11454EJ1V0DS00 (1st edition) Date Published May 1996 P Printed in Japan © 1996 µPD3734A COMPARISON CHART µPD3734ACY Item µPD3734CY-1 PIN CONFIGURATION Pin 13 No connection Digital GND RECOMMENDED Data rate MAX. (MHz) 5 (S/H in used) 3 (No conditions) OPERATING CONDITIONS 4 (S/H not in used) ELECTRICAL Average dark signal MAX. (mV) 3.0 8.0 CHARACTERISTICS Dark signal non-uniformity (mV) MIN. TYP. MAX. 4 6 –8 ±4 +8 Power consumption (mW) TYP. MAX. 190 250 170 220 Image lag (%) TYP. MAX. 0.3 1.0 7 14 Total transfer efficiency (test conditions) Reset feed-through noise (mV) Data rate = 4 MHz MIN. TYP. MAX. Bit noise TYP. (mVp-p) Random noise (mV) Data rate = 3 MHz –900 –200 +500 0 1000 1800 4.5 16 0.9 (S/H in used) No definition 0.9 (S/H not in used) TIMING CHART 2 t4 MIN. (ns) 90 150 t5 MIN. (ns) 70 150 t8 MIN. (ns) 20 80 DEFINITIONS OF Dark signal non-uniformity Absolute value Minus and plus value CHARACTERISTICS ITEMS Random noise Refer to DEFINITIONS OF CHARACTERISTICS ITEMS 11. Random noise No definition BLOCK DIAGRAM VOD 3 14 φ 2 AGND 10 φ RB 21 VOUT 17 • • • φ SHB Voltage Amplifier S/H circuit Reset feed-through level clamp circuit Optical black (OB) 18 pixels, invalid 2 pixels, valid photocell 2660 pixels, invalid 2 pixels 9 φ TG 2 15 φ 1 4 AGND µPD3734A 3 µPD3734A PIN CONFIGURATION (Top View) CCD linear image sensor 22-pin plastic DIP (400 mil) No connection 1 NC Sample and hold clock 2 φ SHB Output drain voltage 3 Analog GND NC 22 No connection φ RB 21 Reset gate clock VOD NC 20 No connection 4 AGND NC 19 No connection No connection 5 NC NC 18 No connection No connection 6 NC VOUT 17 Output No connection 7 NC NC 16 No connection No connection 8 NC φ1 15 Shift register clock 1 Transfer gate clock 9 φ TG φ2 14 Shift register clock 2 Analog GND 10 AGND NC 13 No connection No connection 11 NC NC 12 No connection PHOTOCELL STRUCTURE DIAGRAM 2 µm 11 µ m 9 µm Aluminum electrode 4 Channel stopper µPD3734A ABSOLUTE MAXIMUM RATINGS (TA = +25 ˚C) Parameter Symbol Ratings Unit Output drain voltage VOD –0.3 to +15 V Shift register clock voltage Vφ1 , V φ 2 –0.3 to +15 V Reset gate clock voltage VφRB –0.3 to +15 V Transfer gate clock voltage VφTG –0.3 to +15 V Sample and hold clock voltage VφSHB –0.3 to +15 V Operating ambient temperature TA –25 to +60 ˚C Storage temperature Tstg –40 to +70 ˚C Caution Exposure to ABSOLUTE MAXIMUM RATING for extended periods may affect device reliability; exceeding the ratings could cause permanent damage. The parameters apply independently. RECOMMENDED OPERATING CONDITIONS (TA = –25 to +60 ˚C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Output drain voltage VOD 11.4 12.0 12.6 V Shift register clock high level Vφ1H, Vφ2H 4.5 5.0 5.5 V Shift register clock low level Vφ1L, Vφ2L –0.3 0 +0.5 V Reset gate clock high level VφRBH 4.5 5.0 5.5 V Reset gate clock low level VφRBL –0.3 0 +0.5 V Transfer gate clock high level VφTGH 4.5 5.0 5.5 V Transfer gate clock low level VφTGL –0.3 0 +0.5 V Sample and hold clock high level VφSHBH 4.5 5.0 5.5 V Sample and hold clock low level VφSHBL –0.3 0 +0.5 V Data rate fφRB S/H in used 0.2 1 5 MHz S/H not in used 0.2 1 4 MHz 5 µPD3734A ELECTRICAL CHARACTERISTICS TA = +25 ˚C, VOD = 12 V, fφ1 = 0.5 MHz, data rate = 1 MHz, storage time = 10 ms light source: 3200 K halogen lamp + C-500S (infrared cut filter, t = 1 mm), input signal clock = 5 Vp-p Parameter Symbol Test Conditions MIN. TYP. MAX. Unit 1.5 2.0 V 0.029 lx•s Saturation voltage Vsat Saturation exposure SE Daylight color fluorescent lamp Photo response non-uniformity PRNU VOUT = 500 mV ±2 ±8 % Average dark signal ADS Light shielding 1.0 3.0 mV Dark signal non-uniformity DSNU Light shielding 4 6 mV Power consumption PW 190 250 mW Output impedance ZO 0.5 1 kΩ Response RF 70 91 V/Ix·s Daylight color fluorescent lamp 49 Response peak wavelength 550 VOUT = 1 V nm Image lag IL Offset level VOS Input capacitance of shift register clock pin C φ1 , C φ2 400 pF Input capacitance of reset gate clock pin CφRB 5 pF Input capacitance of sample and hold CφSHB 5 pF Input capacitance of transfer gate clock pin CφTG 100 pF Output fall delay time td 80 ns Register imbalance RI VOUT = 500 mV Total transfer efficiency TTE VOUT = 1 V, data rate = 4 MHz Dynamic range DR Vsat/DSNU Reset feed-through noise RFSN Light shielding –900 –200 +500 mV Sample and hold noise SHSN Light shielding, φSHB series resistor 47 Ω –50 0 +50 mV Bit noise BN Random noise σ 3.5 0.3 1.0 % 4.5 5.5 V clock pin Resolution 6 MTF 3 92 % % 500 times 4.5 mVp-p S/H in used 0.9 mV S/H not in used 0.9 mV Modulation transfer function at nyquist frequency 65 % µPD3734A TIMING CHART 1 1348 1347 1346 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 φ1 1 φ TG φ2 2691 2692 2693 2694 2695 2696 35 36 37 32 33 34 25 26 27 28 29 30 31 22 23 24 16 17 18 19 20 21 10 11 12 13 14 15 1 2 3 4 5 6 7 8 9 φ RB VOUT φ SHB VOUT (S/H) Valid photocell 2660 pixels OB (Optical black) 18 pixels Invalid photocell 2 pixels Invalid photocell 2 pixels Remark VOUT = Output when φSHB is not in used (When φSHB is not in used, connect φSHB pin to GND). VOUT (S/H) = Output when φSHB is in used. 7 µPD3734A TIMING CHART 2 t2 t1 90 % φ1 10 % φ2 t6 φ RB t3 t7 90 % 10 % t4 90 % 10 % t5 td VOUT RFSN 10 % VOS 90 % 10 % φ SHB 50 % t12 t9 VOUT (S/H) 50 % Signal 50 % Sampling noise Remark VOUT (S/H) = Output when φSHB is in used. 8 t13 t8 t10 t11 µPD3734A TIMING CHART for φTG, φ1, φ2 t14 t16 t15 90 % φ TG 10 % t18 t17 90 % φ1 φ2 CROSS POINTS for φ1, φ2 φ1 φ2 2 V or more 2 V or more Remark Adjust cross point of φ1, φ2 by φ1, φ2 pin external input resistors. Parameter MIN. TYP. MAX. Unit t1 ,t2 0 50 (100) ns t3 20 100 ns t4 90 300 ns t5 70 300 ns t6, t7 0 50 ns t8 20 200 ns t9, t10, t11 0 50 ns t12 0 t13 t14, t15 t16 t17, t18 ns 5 0 50 650 1000 0 100 10 ns ns (2000) ns ns 9 µPD3734A DEFINITIONS OF CHARACTERISTIC ITEMS 1. Saturation voltage: Vsat Output signal voltage at which the response linearity is lost. 2. Saturation exposure: SE Product of intensity of illumination (lx) and storage time (s) when saturation of output voltage occurs. 3. Photo response non-uniformity: PRNU The peak/bottom ratio to the average output voltage of all the valid pixels calculated by the following formula. VMAX. or VMIN. × 100 − 1 1 n ∑ Vj n j=1 PRNU (%) = n : Number of valid pixels Vj : Output voltage of each pixel VMIN. Register Dark DC level 4. VMAX. 1 n ∑ Vj n j=1 Average dark signal: ADS Output average voltage in light shielding. ADS (mV) = 1 n ∑ Vj n j=1 n : Number of valid pixels Vj : Output voltage of each pixel 5. Dark signal non-uniformity: DSNU The difference between peak or bottom output voltage in light shielding and ADS. DSNU (mV): maximum of |Vj – ADS| j = 1 to n n : Number of valid pixels Vj : Output voltage of each pixel ADS Register Dark DC level DSNU 10 µPD3734A 6. Output impedance: Zo Output pin impedance viewed from outside. 7. Response: R Output voltage divided by exposure (lx·s). Note that the response varies with a light source. 8. Image Lag: IL The rate between the last output voltage and the next one after read out the data of a line. φ TG Light OFF ON VOUT V1 IL (%) = 9. V1 × 100 VOUT VOUT Register Imbalance: RI The rate of the difference between the average of the output voltage of Odd and Even pixels, against the average output voltage of all the valid pixels. n 2 2 ∑ (V2 j−1 − V2 j ) n j=1 RI (%) = 1 n ∑ Vj n j=1 × 100 n : Number of valid pixels Vj : Output voltage of each pixel 10. Bit Noise: BN Output signal distribution of a photocell by scan. 11 µPD3734A 11. Random noise: σ Random noise σ is defined as the standard deviation of a valid photocell output signal with 100 times (= 100 lines) data sampling at dark (light shielding). 100 σ (mV) = ∑ (Vi − V)2 i=1 100 , V= 1 100 ∑ Vi 100 i=1 Vi: A valid photocell output signal among all of the valid photocells VOUT V1 line 1 V2 line 2 … … V100 line 100 This is measured by the DC level sampling of only the signal level, not by CDS (Correlated Double Sampling). 12 µPD3734A STANDARD CHARACTERISTIC CURVES (TA = +25 ˚C) DARK OUTPUT TEMPERATURE CHARACTERISTIC STORAGE TIME OUTPUT VOLTAGE CHARACTERISTIC 2 8 4 Relative Output Voltage Relative Output Voltage 1 2 1 0.5 0.2 0.25 0.1 0.1 0 10 20 30 40 1 50 5 10 Storage Time (ms) Operating Ambient Temperature TA (˚C) SPECTRAL RESPONSE CHARACTERISTIC 100 Response Ratio (%) 80 60 40 20 0 400 600 800 1000 1200 Wavelength (nm) 13 µPD3734A APPLICATION CIRCUIT EXAMPLE +5 V 0.1 µ F 10 µ F /16 V + µPD74HC04 +12 V 10 µ F /16 V + 10 Ω 0.1 µ F φ RB φ SHB 1 NC φ1 47 Ω 2 φ SHB NC 20 4 AGND NC 19 7 NC µ PD3734A 6 NC 10 Ω φ RB 21 3 VOD 5 NC φ2 NC 22 47 Ω 2 kΩ NC 18 VOUT VOUT 17 100 Ω NC 16 8 NC φ 1 15 9 φ TG φ 2 14 10 AGND NC 13 11 NC NC 12 100 Ω 2Ω 2Ω φ TG Remark When internal sample and hold circuit of the µPD3734A is not necessary, connect pin 2 (φSHB) to GND. 14 µPD3734A PACKAGE DIMENSIONS CCD LINEAR IMAGE SENSOR 22PIN PLASTIC DIP (400 mil) (Unit : mm) 1bit 9.25±0.3 2.0 0.8±0.3 37.5 44.0±0.3 (5.42) 0.46±0.1 4.39±0.4 2.54 1.02±0.15 4.21±0.5 (1.99) 10.16 2.35±0.2 1 0.05 0~10° 0.25± 25.4 Name Plastic cap Dimensions 42.9 ✕ 8.35 ✕ 0.7 1 The bottom of the package Refractive index 2 1.5 The surface of the chip 2 The thickness of the cap over the chip 22C-1CCD-PKG4 15 µPD3734A RECOMMENDED SOLDERING CONDITIONS When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E). Type of Through-hole Device µPD3734ACY: CCD linear image sensor 22-pin plastic DIP (400 mil) Process Conditions Wave soldering (only to leads) Solder temperature: 260 ˚C or below, Flow time: 10 seconds or less. Partial heating method Pin temperature: 260 ˚C or below, Heat time: 10 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. During assembly care should be taken to prevent solder or flux from contacting the plastic cap. The optical characteristics could be degraded by such contact. 16 µPD3734A NOTES ON CLEANING THE PLASTIC CAP 1 CLEANING THE PLASTIC CAP Care should be taken when cleaning the surface to prevent scratches. The optical characteristics of the CCD will be degraded if the cap is scratched during cleaning. We recommend cleaning the cap with a soft cloth moistened with one of the recommended solvents below. Excessive pressure should not be applied to the cap during cleaning. If the cap requires multiple cleanings it is recommended that a clean surface or cloth be used. 2 RECOMMENDED SOLVENTS The following are the recommended solvents for cleaning the CCD plastic cap. Use of solvents other than these could result in optical or physical degradation in the plastic cap. Please consult your sales office when considering an alternative solvent. Solvents Symbol Ethyl Alcohol EtOH Methyl Alcohol MeOH Isopropyl Alcohol IPA N-methyl Pyrrolidone NMP 17 µPD3734A [MEMO] 18 µPD3734A NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS device behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. 19 µPD3734A The application circuits and their parameters are for references only and are not intended for use in actual designin's. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11