DATA SHEET MOS INTEGRATED CIRCUIT µPD3753 2088-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUIT The µ PD3753 is a 2088-bit high sensitivity CCD (Charge Coupled Device) linear image sensor which changes optical images to electrical signal. The µ PD3753 consists of 2088-bit photocell array and a line of 2088-bit CCD charge transferred register. It contains a reset a feed-through level clamp circuit, a pulse generator, and a voltage amplifier to provide high sensitivity and low noise. It also supports low power consumption with single 5 V power supply. The µPD3753 can be driven by power supply and three input clocks owing to the built-in reset pulse generator and a clamp pulse generator. FEATURES • Valid photocell : 2088-bit • Photocell's pitch : 14 µm • High response sensitivity : Providing a response equal with the existing equivalent NEC • Low noise : Providing about two thirds register imbalance of the existing equivalent • Peak response wavelength : 550 nm (green) product (µPD3743) to the light from a daylight fluorescent lamp NEC product (µPD3743) • Resolution : 8 dot/mm across the shorter side of a B4-size (257 × 364 mm) sheet • Power supply : +5 V • Drive clock level : CMOS output under +5 V operation • Scanning speed : 1.0 ms/line • Built-in circuit : Reset feed-through level clamp circuit, reset pulse generator, clamp pulse generator ORDERING INFORMATION Part Number µPD3753CY Package CCD LINEAR IMAGE SENSOR 22 PIN PLASTIC DIP (400 mil) Quality Grade Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. The information in this document is subject to change without notice. Document No. IC-3429 (O. D. No. IC-9002) Date Published August 1994 P Printed in Japan © 1994 µPD3753 BLOCK DIAGRAM VOD 3 Reset pulse/ clamp pulse generator VOUT 19 •Voltage amplifier •Reset feed-through level clamp circuit 15 φ 2 Optical black (OB) 18 bits, invalid 2 bits, valid photocell 2088 bits, invalid 2 bits 9 φ TG CCD register 14 φ 1 2 20 13 AGND DGND µPD3753 PIN CONFIGURATION (Top View) CCD LINEAR IMAGE SENSOR 22 PIN PLASTIC DIP (400 mil) No connection 1 NC NC 22 No connection No connection 2 NC NC 21 No connection Output unit drain voltage 3 VOD AGND 20 Analog GND No connection 4 NC V OUT 19 Output No connection 5 NC NC 18 No connection No connection 6 NC NC 17 No connection No connection 7 NC NC 16 No connection No connection 8 NC φ2 15 Shift register clock 2 Transfer gate clock 9 φ TG φ1 14 Shift register clock 1 No connection 10 NC DGND 13 Digital GND No connection 11 NC NC 12 No connection PHOTOCELL STRUCTURE DIAGRAM 2 µm 14 µ m 12 µm Channel stopper Aluminum electrode 3 µPD3753 ABSOLUTE MAXIMUM RATINGS (Ta = +25 °C) Parameter Symbol Ratings Unit Output unit drain voltage VOD –0.3 to +8 V Shift register clock voltage Vφ 1, φ 2 –0.3 to +8 V Transfer gate signal voltage Vφ TG –0.3 to +8 V Operating ambient temperature Topt –25 to +60 °C Storage temperature Tstg –40 to +70 °C RECOMMENDED OPERATING CONDITIONS (Ta = –25 to + 60 °C) Parameter MIN. TYP. MAX. Unit Output unit drain voltage VOD 4.7 5.0 5.3 V Shift register clock φ 1, φ 2 signal high level Vφ 1H, φ 2H 4.5 5.0 VOD + 0.2 V Shift register clock φ 1, φ 2 signal low level Vφ 1L, φ 2L –0.3 0 +0.5 V Transfer gate signal high level Vφ TGH 4.5 Vφ 1H Vφ 1H V Transfer gate signal low level Vφ TGL –0.3 0 +0.5 V Data rate fφ R 0.2 1 2 MHz Caution When Vφ TGH > Vφ 1H, image lag increases. 4 Symbol µPD3753 ELECTRICAL CHARACTERISTICS Ta = +25 °C, VOD = 5 V, fφ 1 = 1 MHz, data rate = 1 MHz, storage time = 10 ms light source: 3200 K halogen lamp + C500 (infrared cut filter), input clock = 5 VP-P Parameter Symbol Test Conditions MIN. TYP. MAX. Unit 1.0 1.2 V 0.013 lx•s Saturation voltage Vsat Saturation exposure SE Daylight color fluorescent lamp Photo response non-uniformity PRNU VOUT = 500 mV ±2 ±8 % Average dark signal ADS Light shielding 1.0 8.0 mV Dark signal non-uniformity DSNU Light shielding ±4 +8 mV Power consumption PW 30 50 mW Output impedance ZO 0.5 1 kΩ Response RF 90 117 V/lx•s Daylight color fluorescent lamp –8 63 Response peak wavelength 550 Image lag IL Offset level VOS Input capacitance of shift register clock pin Cφ 1 Input capacitance of transfer gate signal pin VOUT = 1 V 2.5 nm 7 14 % 3.0 3.5 V 300 pF Cφ TG 100 pF Output fall delay time td 130 ns Total transfer efficiency TTE VOUT = 1 V, data rate = 2 MHz Dynamic range DR Vsat /DSNU Reset feed-through noise RFSN Light shielding Bit noise BN Light shielding 10 mVP-P Resolution MTF Modulation transfer function at nyquist frequency 65 % Cφ 2 92 % 375 0 800 times 1500 mV Remark When VOD = 4.7 V, the response typically decreases to 90 % of the value under 5 V operation. 5 µPD3753 TIMING CHART 1 φ2 VOUT VOUT unstable period 12 bits* Caution OB (Optical black) 18 bits t1 t2 90% 90% φ1 10% 10% 90% 90% φ2 10% 10% td VOUT 10% 6 Valid photocell 2088 bits Be sure not to use this period (indicated by *) as the black level, because this part is unstable. TIMING CHART 2 Remark Invalid photocell 2 bits : Signal output Invalid photocell 2 bits 2124 2123 2122 2121 2120 2119 2118 37 36 35 34 33 32 31 16 15 14 13 12 5 4 3 2 φ1 1 φ TG µPD3753 TIMING CHART for φ TG, φ 1, φ 2 t3 t5 t4 90 % φ TG 10 % t6 t7 90 % φ1 φ2 CROSS POINTS for φ 1, φ 2 φ1 φ2 2 V or more Note 2 V or more Adjust cross point of φ 1, φ 2 by φ 1, φ 2 pin external input resistors. (Unit: ns) Parameter MIN. TYP. MAX. t1 ,t2 0 50 (100) t3, t4 0 50 – 650 1000 (2000) 0 100 – t5 t6, t7 Remark The MAX. in the table above shows the operation range in which the output characteristics are kept almost enough for general purpose, does not show the limit above which the µPD3753 is destroyed. 7 µPD3753 DEFINITIONS OF CHARACTERISTIC ITEMS 1. Saturation voltage: Vsat Output signal voltage at which the response linearity is lost. 2. Saturation exposure: SE Product of intensity of illumination (lx) and storage time (s) when saturation of output voltage occurs. 3. Photo response non-uniformity: PRNU The peak/bottom ratio to the average output voltage of all the valid bits calculated by the following formula. VMAX. or VMIN. PRNU (%) = 1 n n ∑V –1 x 100 j j=1 n : Number of valid bits Vj : Output voltage of each bit V MIN. Register Dark DC level 4. V MAX. 1 n n ∑V j j=1 Average dark signal: ADS Output average voltage in light shielding. 1 ADS(mV) = n 5. n ∑V j j=1 Dark signal non-uniformity: DSNU The difference between peak or bottom output voltage in light shielding and ADS. ADS Register Dark DC level DSNU MIN. DSNU MAX. 8 µPD3753 6. Output impedance: Zo Output pin impedance viewed from outside. 7. Response: R Output voltage divided by exposure (lx•s). Note that the response varies with the light source. 8. Image Lag: IL The rate between the last output voltage and the next one after read out the data of a line. φ TG Light OFF ON VOUT V1 IL = V1 VOUT 9. V OUT × 100 (%) Bit Noise: BN Output signal distribution of a photocell by scan. 9 µPD3753 STANDARD CHARACTERISTIC CURVES (Ta = +25 °C) DARK OUTPUT TEMPERATURE CHARACTERISTIC STORAGE TIME OUTPUT VOLTAGE CHARACTERISTIC 2 8 4 Relative Output Voltage Relative Output Voltage 1 2 1 0.5 0.2 0.25 0.1 0.1 0 10 20 30 40 1 50 5 10 Storage Time (ms) Ambient Temperature T a ( °C) SPECTRAL RESPONSE CHARACTERISTIC 100 Response Ratio (%) 80 60 40 20 0 400 600 800 Wavelength (nm) 10 1000 1200 µPD3753 POWER SUPPLY VOLTAGE RESPONSE RATIO CHARACTERISTIC 110 Response Ratio (%) 100 90 0 4.5 4.7 5.0 5.3 5.5 Power Supply Voltage (V) 11 µPD3753 APPLICATION EXAMPLE +5 V 10 µF /16 V 0.1µF + µPD74HC04 +5 V 10 µF /16 V + 10 Ω 0.1µF 2.2 kΩ µ PD3753CY φ2 φ1 10 Ω 1 NC NC 22 2 NC NC 21 3 VOD AGND 20 4 NC VOUT 19 5 NC NC 18 6 NC NC 17 7 NC NC 16 8 NC φ2 15 9 φ TG φ 1 14 10 NC DGND 13 11 NC NC 12 VOUT 2SA1005 100 Ω 100 Ω 47 Ω 47 Ω φ TG The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 12 µPD3753 PACKAGE DIMENSIONS CCD LINEAR IMAGE SENSOR 22PIN PLASTIC DIP (400 mil) (Unit : mm) 1bit 9.25±0.3 2.0 1.7±0.3 37.5 44.0±0.3 (5.42) 4.21±0.5 2.54 1.02±0.15 0.46±0.1 4.39±0.4 (1.99) 10.16 2.35±0.2 1 0.05 0~10° 0.25± 25.4 Name Dimensions Plastic cap 42.9 × 8.35 × 0.7 1 The bottom of the package Refractive index 2 1.5 The surface of the chip 2 The thickness of the cap over the chip 22C-1CCD-PKG2 13 µPD3753 RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (IEI-1207). Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. Table 1 Type of Through Hole Device µPD3753CY : CCD LINEAR IMAGE SENSOR 22 PIN PLASTIC DIP (400 mil) Soldering Process Soldering Conditions Wave soldering (Only lead part) Solder temperature: 260 °C or below, Flow time: 10 seconds or below Partial heating method Pin temperature: 260 °C or below, Time: 10 seconds or below Caution Do not jet molten solder on the surface of package. 14 µPD3753 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. 15 µPD3753 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6