DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES PACKAGE DIMENSIONS use as RF amplifier in UHF TV tuner. 0.02 pF TYP. 20 dB TYP. 1.1 dB TYP. in millimeters +0.2 3 (1.9) 0.95 4 ELECTRICAL CHARACTERISTICS (TA = 25 °C) MAX. UNIT 5° Source Drain Gate 2 Gate 1 SYMBOL MIN. BVDSX 10 Drain Current IDSS 10 80 mA Gate1 to Source Cutoff Voltage VG1S(off) –3.5 V Gate2 to Source Cutoff Voltage VG2S(off) –3.5 V Gate1 Reverse Current IG1SS 10 µA VDS = 0, VG1S = –4 V, VG2S = 0 Gate2 Reverse Current IG2SS 10 µA VDS = 0, VG2S = –4 V, VG1S = 0 Forward Transfer Admittance | yfs | 25 mS VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1.0 kHz Input Capacitance Ciss 1.0 Reverse Transfer Capacitance Crss VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1.0 MHz Power Gain GPS Noise Figure NF Drain to Source Breakdown Voltage TYP. 0.16–0.06 +0.1 1. 2. 3. 4. 0 to 0.1 5° CHARACTERISTIC 5° 0.6 5° 0.4 +0.1 –0.05 +0.1 –0.05 1 V V V mA mW °C °C 0.95 10 –4.5 –4.5 80 200 125 –55 to +125 (1.9) 2 1.5 +0.2 –0.1 0.8 VDSX VG1S VG2S ID PT Tch Tstg 1.1 +0.2 –3.1 Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature 2.9±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 0.4 +0.1 –0.05 2.8 –0.3 +0.1 Suitable for Low Crss: High GPS: Low NF: 0.4 –0.05 • • • • V 35 16.0 1.5 2.0 pF 0.02 0.035 pF 20.0 1.1 dB 2.5 dB TEST CONDITIONS VG1S = –4 V, VG2S = 0, ID = 20 µA VDS = 5 V, VG1S = 0, VG2S = 0 VDS = 5 V, VG2S = 0, ID = 100 µA VDS = 5 V, VG1S = 0, ID = 100 µA VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz IDSS Classification (Unit: mA) Class Marking IDSS U76 U77 U78 U79 U76 U77 U78 U79 10 to 25 20 to 35 30 to 50 45 to 80 PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage or fields. Document No. P10568EJ2V0DS00 (2nd edition) (Previous No. TC-2134) Date Published August 1995 P Printed in Japan © 1995 1987 3SK206 TYPICAL CHARACTERISTICS (TA = 25 °C) POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 30 VDS = 5 V 300 200 100 GPS – Power Gain – dB 400 NF – Noise Figure – dB PT – Total Power Dissipation – mW 10 Free Air 5 15 GPS VG2S = 1 V at ID = 10 mA f = 900 MHZ 0 –15 –30 NF 0 25 50 75 100 125 0 TA – Ambient Temperature – °C –45 –3.0 –2.0 –1.0 0 +1.0 +2.0 VG2S – Gate 2 to Source Voltage – V FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE VDS = 5 V f = 1 kHz POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE VG1S = 1 V 10 GPS 40 0.5 V 0 5 GPS – Power Gain – dB 20 NF – Noise Figure – dB |yfs| – Forward Transfer Admittance – mS 80 VG2S = 1 V ID = 10 mA f = 900 MHz 10 NF –0.5 V VG1S – Gate 1 to Source Voltage – V INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE POWER GAIN AND NOISE FIGURE vs. DRAIN CURRENT 0 +0.6 +1.2 10 Ciss – Input Capacitance – pF VDS = 5 V f = 1 MHz VG2S = 1 V at ID = 10 mA VG2S = 1 V at ID = 5 mA 1.0 0 25 20 VDS = 5 V VG2S = 1 V f = 900 MHz GPS 15 5 10 5 0 1.0 0 VG2S – Gate 2 to Source Voltage – V +1.0 10 GPS – Power Gain – dB –0.6 2.0 2 0 5 VDS – Drain to Source Voltage – V –1.2 NF – Noise Figure – dB 0 –1.8 0 0 NF 5 ID – Drain Current – mA 10 3SK206 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE 80 100 VDS = 5 V f = 1 kHz VDS = 5 V |yfs| – Forward Transfer Admittance – mS ID – Drain Current – mA VG2S = 1 V 0.5 V 50 0 –0.5 V VG2S = 1 V 0.5 V 40 0 –1.0 V –0.5 V 0 –1.8 –1.2 –0.6 0 +0.6 +1.2 50 0 VG1S – Gate 1 to Source Voltage – V 100 ID – Drain Current – mA S-PARAMETER (VDS = 5 V, VG2S = 1 V, ID = 10 mA) FREQUENCY (MHz) S11 S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 100.00 1.003 –4.9 3.938 175.0 0.004 41.9 0.963 –1.5 200.00 0.984 –11.9 4.009 164.1 0.001 –173.5 0.958 –4.2 300.00 0.985 –14.9 3.859 158.5 0.006 71.7 0.972 –4.8 400.00 0.964 –21.8 3.766 151.3 0.005 93.9 0.972 –8.2 500.00 0.928 –24.6 3.699 149.1 0.005 74.5 0.965 –8.6 600.00 0.928 –31.9 3.886 138.8 0.008 84.2 0.983 –13.1 700.00 0.869 –33.5 3.612 132.3 0.003 65.8 0.961 –12.1 800.00 0.889 –39.8 3.643 126.1 0.004 98.0 0.995 –16.2 900.00 0.832 –42.9 3.553 121.5 0.004 102.4 0.981 –17.0 1000.00 0.847 –47.1 3.817 115.2 0.003 –173.4 1.039 –20.8 1100.00 0.795 –49.8 3.681 106.1 0.010 –155.7 0.999 –22.3 1200.00 0.833 –51.4 3.747 100.4 0.021 –147.3 1.107 –25.1 3 3SK206 900 MHz GPS AND NF TEST CIRCUIT VG2S (1 V) 1 000 pF 47 kΩ 1 000 pF to 10 pF to 10 pF INPUT 50 Ω to 10 pF to 10 pF OUTPUT 50 Ω L2 L1 47 kΩ RFC 1 000 pF 1 000 pF VG1S L1, L2: 35 × 5 × 0.2 mm VDD (5 V) VDS = 5 V, VG2S = 1 V, ID = 10 mA 4 3SK206 [MEMO] 5 3SK206 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2