DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. (Unit: mm) CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB +0.2 (1.9) 4 Pins Mini Mold +0.2 0.6 –0.3 VG1S ±8 V VG2S ±8 (±10)*1 V Gate1 to Drain Voltage VG1D 18 V Gate2 to Drain Voltage VG2D 18 V Drain Current ID 25 mA Total Power Dissipation PD 200 mW Channel Temperature Tch 125 °C Storage Temperature Tstg –55 to +125 °C *1 RL ≥ 10 kΩ 5° 1. 2. 3. 4. 0.16 Gate1 to Source Voltage Gate2 to Source Voltage +0.2 –0.3 V (±10)*1 5° 0 to 0.1 18 1.1 VDSX +0.2 –0.3 Drain to Source Voltage 5° 0.8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) +0.2 • Small Package: 0.4 –0.3 Embossed Type Taping 1 • Automatically Mounting: 4 • Suitable for use as RF amplifier in CATV tuner. (1.8) 2.9±0.2 • Enhancement Type. 3 2 GPS = 20 dB TYP. (f = 470 MHz) +0.2 1.5 –0.3 0.85 0.95 • High Power Gain: 0.4 –0.3 +0.2 NF2 = 0.9 dB TYP. (f = 55 MHz) +0.2 2.8 –0.3 NF1 = 2.2 dB TYP. (f = 470 MHz) 0.4 –0.3 • Low Noise Figure: 5° Source Drain Gate 2 Gate 1 PRECAUTION Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage or fields. Document No. P10575EJ2V0DS00 (2nd edition) (Previous No. TD-2268) Date Published August 1995 P Printed in Japan © 1989 1993 3SK223 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL Drain to Source Breakdown Voltage BVDSX Drain Current IDSX Gate1 to Source Cutoff Voltage MIN. MAX. 18 UNIT V TEST CONDITIONS VG1S = VG2S = –2 V, ID = 10 µA 0.01 8.0 mA VG1S(off) 0 +1.0 V VDS = 6 V, VG2S = 3 V, ID = 10 µA Gate2 to Source Cutoff Voltage VG2S(off) 0 +1.0 V VDS = 6 V, VG1S = 3 V, ID = 10 µA Gate1 Reverse Current IG1SS ±20 nA VDS = 0, VG2S = 0, VG1S = ±8 V Gate2 Reverse Current IG2SS ±20 nA VDS = 0, VG1S = 0, VG2S = ±8 V Forward Transfer Admittance |yfs| 15 19.5 mS VDS = 5 V, VG2S = 4 V, ID = 10 mA f = 1 kHz Input Capacitance Ciss 2.5 3.0 3.5 pF Output Capacitance CDSS 0.9 1.2 1.5 pF VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 MHz Reverse Transfer Capacitance Crss 0.015 0.03 pF Power Gain GPS Noise Figure 1 NF1 2.2 3.2 dB Noise Figure 2 NF2 0.9 2.4 dB 17.0 IDSX Classification Class U90/UIO* U91/UIA* Marking U90 U91 IDSX (mA) 0.01 to 3.0 1.0 to 8.0 * Old Specification/New Specification 2 TYP. 20.0 dB VDS = 5 V, VG2S = 4 V, VG1S = 0.75 V VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 470 MHz VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 55 MHz 3SK223 TYPICAL CHARACTERISTICS (TA = 25 °C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 300 200 100 25 25 50 75 100 125 VG1S = 1.8 V 20 1.6 V 15 1.4 V 10 1.2 V 5 1.0 V 0.8 V 0.6 V 3 12 15 FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE VG2S = 3.5 V VDS = 6 V 3.0 V 2.5 V 2.0 V 10 1.5 V 5 0.5 1.0 1.5 2.0 2.5 VG1S – Gate1 to Source Voltage – V 40 VDS = 6 V f = 1 kHz 32 VG2S = 3.5 V 24 16 8 0.5 V 0.5 0 5.0 VG2S = 3.5 V 24 3.0 V 16 2.0 V 8 1.0 V 4 1.5 V 8 12 ID – Drain Current – mA 2.5 V 16 20 1.0 1.5 V 1.5 3.0 V 2.0 2.5 INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE VDS = 6 V f = 1 kHz 32 1.0 V 2.5 V 2.0 V VG1S – Gate1 to Source Voltage – V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 0 9 DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE 15 40 6 VDS – Drain to Source Voltage – V 1.0 V |yfs| – Forward Transfer Admittance – mS VG2S = 3 V TA – Ambient Temperature – °C 20 0 25 0 |yfs| – Forward Transfer Admittance – mS 0 ID – Drain Current – mA ID – Drain Current – mA 400 Ciss – Input Capacitance – pF PT – Total Power Dissipation – mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 4.0 ID = 10 mA (at VDS = 6 V VG2S = 3 V) f = 1 MHz 3.0 2.0 1.0 0 –1.0 0 1.0 2.0 3.0 4.0 VG2S – Gate2 to Source Voltage – V 3 3SK223 OUTPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE f = 470 MHz GPS ID = 10 mA 20 (at VDS = 6 V VG2S = 3 V) 1.5 1.0 5 GPS – Power Gain – dB 2.0 10 ID = 10 mA (at VDS = 6 V VG2S = 3 V) f = 1 MHz NF – Noise Figure – dB CDSS – Output Capacitance – pF 2.5 POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE 10 0 –10 NF 0.5 –20 0 –1.0 0 1.0 2.0 3.0 VG2S – Gate2 to Source Voltage – V 4 4.0 0 –2.0 0 2.0 4.0 6.0 VG2S – Gate2 to Source Voltage – V 8.0 3SK223 GPS AND NF TEST CIRCUIT AT f = 470 MHz VG2S 1 000 pF 22 kΩ 1 000 pF Ferrite Beads 40 pF OUTPUT L2 INPUT 40 pF 50 Ω L1 50 Ω 1 000 pF 15 pF 1 000 pF 15 pF 22 kΩ L3 1 000 pF 1 000 pF VG1S VDS L1: φ 1.2 mm U.E.W φ 5 mm 1T L2: φ 1.2 mm U.E.W φ 5 mm 1T L3: REC 2.2 µ H NF TEST CIRCUIT AT f = 55 MHz VG2S VDS RFC Ferrite Beads 2.2 kΩ 1 500 pF 1 500 pF 1 000 pF 3.3 kΩ 50 Ω OUTPUT 27 pF INPUT 47 kΩ 27 pF 3.3 kΩ 47 kΩ 50 Ω 1 000 pF VG1S 5 3SK223 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2