VISHAY VB40100C

New Product
V40100C, VB40100C, VI40100C
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
TO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
• Solder bath temperature 275 °C maximum, 10 s, per JESD
22-B106 (for TO-220AB, TO-263AB and TO-262AA
package)
3
1
V40100C
PIN 1
PIN 2
PIN 3
CASE
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TO-263AB
TO-262AA
TYPICAL APPLICATIONS
K
K
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
2
MECHANICAL DATA
1
1
VB40100C
Case: TO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
VI40100C
PIN 1
K
PIN 2
2
3
HEATSINK
PIN 1
PIN 2
PIN 3
K
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
per
Polarity: As marked
IF(AV)
2 x 20 A
VRRM
100 V
IFSM
250 A
VF at IF = 20 A
0.61 V
TJ max.
150 °C
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40100C
VB40100C
VI40100C
UNIT
100
V
IF(AV)
40
20
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
250
A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 90 mH per diode
EAS
230
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
IRRM
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
TJ, TSTG
- 40 to + 150
°C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
VRRM
per device
per diode
Operating junction and storage temperature range
Revision: 19-Oct-11
Document Number: 89042
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
V40100C, VB40100C, VI40100C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IR = 1.0 mA
Breakdown voltage (2)
TA = 25 °C
IR = 10 mA
SYMBOL
VBR
TYP.
MAX.
100 (minimum)
-
105 (minimum)
-
IF = 5 A
IF = 10 A
TA = 25 °C
IF = 20 A
Instantaneous forward voltage per
diode (1)
VF
IF = 5 A
TA = 125 °C
IF = 10 A
IF = 20 A
TA = 125 °C
Reverse current at rated VR per diode (2)
TA = 25 °C
VR = 100 V
V
0.47
-
0.54
-
0.67
0.73
0.38
-
V
0.45
-
0.61
0.67
9
10
-
mA
21
1000
45
mA
TA = 25 °C
VR = 70 V
UNIT
IR
TA = 125 °C
μA
μA
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40100C
VB40100C
VI40100C
UNIT
RJC
2.0
2.0
2.0
°C/W
Typical thermal resistance per diode
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
V40100C-E3/4W
1.85
4W
50/tube
Tube
TO-263AB
VB40100C-E3/4W
1.39
4W
50/tube
Tube
TO-263AB
VB40100C-E3/8W
1.39
8W
800/reel
Tube
TO-262AA
VI40100C-M3/4W
1.46
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
18
50
16
VB40100C
V40100C
40
30
Average Power Loss (W)
Average Forward Current (A)
VI40100C
VF40100C
20
10
D = 0.5
14
D = 0.8
D = 0.3
12
D = 0.2
10
8
D = 1.0
D = 0.1
T
6
4
2
D = tp/T
tp
0
0
0
25
50
75
100
125
150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Revision: 19-Oct-11
175
0
5
10
15
20
25
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Document Number: 89042
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
V40100C, VB40100C, VI40100C
www.vishay.com
Vishay General Semiconductor
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2
0.4
0.6
0.8
Junction to Case
1
V(B,I)40100C
0.1
0.01
1
0.1
Instantaneous Forward Voltage (V)
10
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
Transient Thermal Impedance (°C/W)
100
Instantaneous Reverse Current (mA)
1
t - Pulse Duration (s)
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
10
20
30
40
50
60
70
80
90
100
Junction to Case
10
1
VF40100C
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
Junction Capacitance (pF)
10 000
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 19-Oct-11
Document Number: 89042
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
V40100C, VB40100C, VI40100C
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
PIN
2
1
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.245 (6.22)
MIN.
0.42 (10.66) MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45) MAX.
30° (TYP.)
(REF.)
0.250 (6.35) MIN.
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
K
0.950 (24.13)
0.920 (23.37)
1
PIN
2
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
3
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
Revision: 19-Oct-11
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
PIN 1
PIN 2
PIN 3
HEATSINK
0.035 (0.90)
0.028 (0.70)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.35)
0.205 (5.20)
0.195 (4.95)
Document Number: 89042
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
1
Document Number: 91000