VESD03A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package • Package height = 0.4 mm • Typ. capacitance 46 pF (VR = 2.5 V; f = 1 MHz) • Leakage current < 0.5 µA (VR = 3.3 V) • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 1 20278 20516 2 Marking (example only) XY Bar = Cathode marking X = Date code Y = Type code (see table below) 20279 Ordering Information Device name VESD03A1C-02Z Ordering code Taped units per reel (8 mm tape on 7" reel) Minimum order quantity VESD03A1C-02Z-GS08 8000 8000 Package Data Device name VESD03A1C-02Z Package name Type code Weight Molding compound flammability rating SOD923 C 0.45 mg UL 94 V-0 Moisture sensitivity level Soldering conditions MSL level 1 (according J-STD-020) 260 °C/10 s at terminals Absolute Maximum Ratings Test condition Symbol Value Peak pulse current Rating acc. IEC 61000-4-5, tP = 8/20 µs/single shot IPPM 9.5 A Peak pulse power acc. IEC 61000-4-5, tP = 8/20 µs/single shot PPP 95 W contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C ESD immunity Operating temperature Storage temperature Unit * Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902 Document Number 81690 Rev. 1.3, 22-Sep-08 For technical support, please contact: [email protected] www.vishay.com 1 VESD03A1C-02Z Vishay Semiconductors BiAs-Mode (Bidirectional Asymmetrical protection mode) With the VESD03A1C-02Z one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the VESD03A1C-02Z clamping behaviour is Bidirectional and Asymmetrical (BiAs). 1 2 L1 20280 Electrical Characteristics Ratings at 25 °C, ambient temperature, unless otherwise specified VESD03A1C-02Z BiAs mode (between pin 1 and pin 2) Parameter Test conditions/remarks Symbol number of lines which can be protected Nlines Reverse stand off voltage at IR = 0.5 µA VRWM Reverse current at VR = 3.3 V IR Reverse break down voltage at IR = 1 mA VBR at IPP = 1 A Protection paths Min. Typ. Max. Unit 1 lines 3.3 V 0.06 1 µA 6 6.6 V VC 6.4 7.5 V at IPP = IPPM = 9.5 A VC 8.5 10 V at IPP = 0.2 A VF 0.9 1.2 V at IPP = 1 A VF 1.1 V at IPP = IPPM = 9.5 A VF 2.5 V at VR = 0 V; f = 1 MHz CD 78 at VR = 2.5 V; f = 1 MHz CD 46 5 Reverse clamping voltage Forward clamping voltage 85 pF Capacitance www.vishay.com 2 For technical support, please contact: [email protected] pF Document Number 81690 Rev. 1.3, 22-Sep-08 VESD03A1C-02Z Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 100 120 % Rise time = 0.7 ns to 1 ns Discharge Current IESD 100 % 10 80 % IF (mA) 1 60 % 53 % 0.1 40 % 27 % 0.01 20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100 Time (ns) 20557 0.001 0.5 0.6 0.7 Figure 1. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω/150 pF) 0.8 0.9 VF (V) 20697 Figure 4. Typical Forward Current IF vs. Forward Voltage VF 7 8 µs to 100 % 100 % 6 80 % VR (V) 5 IPPM 60 % 20 µs to 50 % 4 3 40 % 2 20 % 1 0% 0 10 20548 20 30 0 40 Time (µs) 0.01 0.1 1 10 1000 10000 IR (µA) 20698 Figure 2. 8/20 µs Peak Pulse Current Wave Form acc. IEC 61000-4-5 100 Figure 5. Typical Reverse Voltage VR vs. Reverse Current IR 90 10 f = 1 MHz 80 positive surge 8 70 6 VC (V) CD (pF) 60 50 40 4 Measured acc. IEC 61000-4-5 2 (8/20 µs - wave form) VC 30 0 20 10 -2 0 -4 negative surge 0 0.5 20969 1 1.5 2 2.5 3 3.5 VR (V) Figure 3. Typical Capacitance CD vs. Reverse Voltage VR Document Number 81690 Rev. 1.3, 22-Sep-08 0 1 2 3 4 20699 5 6 7 8 9 10 11 IPP (A) Figure 6. Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP For technical support, please contact: [email protected] www.vishay.com 3 VESD03A1C-02Z Vishay Semiconductors 60 acc. IEC 61000-4-2 + 8 kV contact discharge 50 40 VC-ESD (V) 30 20 10 0 - 10 - 20 - 30 - 40 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) 20700 Figure 7. Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 40 acc. IEC 61000-4-2 - 8 kV contact discharge 30 VC-ESD (V) 20 10 0 - 10 - 20 - 30 - 40 - 50 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) 20701 Figure 8. Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) 200 acc. IEC 61000-4-2 contact discharge 150 VC-ESD (V) 100 positive discharge 50 VC-ESD 0 - 50 - 100 negative discharge - 150 - 200 0 20702 5 10 15 20 25 30 35 VESD (kV) Figure 9. Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) www.vishay.com 4 For technical support, please contact: [email protected] Document Number 81690 Rev. 1.3, 22-Sep-08 VESD03A1C-02Z Vishay Semiconductors max. 0.41 [0.016] max. 0.05 [0.002] 0.37 [0.015] [0.030] 0.39 [0.015] 0.75 [0.022] [0.033] 0.55 0.85 [0.026] 0.07 [0.003] 5 degree ref 0.65 0.15 [0.006] 0.25 [0.010] 0.13 [0.005] Package Dimensions in millimeters (inches): SOD923 foot print recommendation: 1.1 [0.043] 0.9 [0.035] Rev. 1 - Date: 05.July.2006 20096 Document Number 81690 Rev. 1.3, 22-Sep-08 0.35 [0.014] Document no.: S8-V-3880.05-001 (4) 0.9 [0.035] 0.3 [0.012] For technical support, please contact: [email protected] www.vishay.com 5 VESD03A1C-02Z Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 For technical support, please contact: [email protected] Document Number 81690 Rev. 1.3, 22-Sep-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1