VESD05A4A-HS4 Vishay Semiconductors 4-Line (Quad) ESD Protection Diode Array in LLP1010-6L Features • • • • • • • • • • Ultra compact LLP1010-6L package Low package height < 0.4 mm 4-line ESD protection (quad) Low leakage current < 0.1 µA Low load capacitance CD = 12 pF ESD-protection acc. IEC 61000-4-2 ± 15 kV contact discharge ± 17 kV air discharge Surge current acc. IEC 6100-4-5 IPP > 2.5 A Soldering can be checked by standard vision inspection. No X-ray necessary Pin plating NiPdAu (e4) no whisker growth Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 5 4 6 1 2 3 20897 20896 Marking (example only) Dot = Pin 1 marking X = Date code Y = Type code (see table below) XY 20932 Ordering Information Ordering code Taped units per reel (8 mm tape on 7" reel) Minimum order quantity VESD05A4A-HS4-GS08 5000 5000 Device name VESD05A4A-HS4 Package Data Device name Package name VESD05A4A-HS4 LLP1010-6L Type code Weight Molding compound flammability rating Moisture sensitivity level Soldering conditions A 1.07 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number 81786 Rev. 1.4, 02-Mar-10 For technical support, please contact: [email protected] www.vishay.com 1 VESD05A4A-HS4 Vishay Semiconductors Absolute Maximum Ratings Rating Peak pulse current Peak pulse power ESD immunity Test conditions Symbol Value Unit BiAs-mode: each input (pin 1, 3 to 5) to ground (pin 2 and 6); acc. IEC 61000-4-5; tp = 8/20 µs; single shot IPPM 2.5 A BiSy-mode: each input (pin 1, 3 to 5) to any other input pin. Pin 2 and 6 not connected. Acc. IEC 61000-4-5; tp = 8/20 µs; single shot IPPM 2.5 A BiAs-mode: each input (pin 1, 3 to 5) to ground (pin 2 and 6); acc. IEC 61000-4-5; tp = 8/20 µs; single shot PPP 30 W BiSy-mode: each input (pin 1, 3 to 5) to any other input pin. Pin 2 and 6 not connected. Acc. IEC 61000-4-5; tp = 8/20 µs; single shot PPP 33 W VESD ± 15 kV VESD ± 17 kV VESD ± 15 kV VESD ± 17 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Contact discharge Acc. IEC61000-4-2; 10 pulses BiAs-mode: each input (pin 1, 3 to 5) to ground (pin 2 and 6) Air discharge Contact Acc. IEC 61000-4-2 ; 10 pulses discharge BiSy-mode: each input (pin 1, 3 to 5) to any other input pin. Air Pin 2 and 6 not connected. discharge Operating temperature Junction temperature Storage temperature BiAs-Mode (4-line Bidirectional Asymmetrical protection mode) With the VESD05A4A-HS4 up to 4 signal- or data-lines (L1 to L4) can be protected against voltage transients. With pin 2 and 6 connected to ground and pin 1, 3, 4 and 5 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode between data line and ground offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the VESD05A4A-HS4 clamping behaviour is Bidirectional and Asymmetrical (BiAs). L4 L3 5 4 6 1 L1 2 3 L2 20898 www.vishay.com 2 For technical support, please contact: [email protected] Document Number 81786 Rev. 1.4, 02-Mar-10 VESD05A4A-HS4 Vishay Semiconductors Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified VESD05A4A-HS4 BiAs mode: each input (pin 1, 3, 4 and 5) to ground (pin 2 and/or 6) Parameter Test conditions/remarks Symbol Number of line which can be protected Nlines at IR = 0.1 µA VRWM at VR = VRWM = 5 V IR at IR = 1 mA VBR Clamping voltage at IPP = 2.5 A acc. IEC 61000-4-5 Forward clamping voltage Protection paths Reverse stand-off voltage Reverse current Reverse breakdown voltage Min. Typ. Max. Unit 4 lines 5 V < 0.01 0.1 µA 8 V VC 12 V at IF = 2.5 A acc. IEC 61000-4-5 VF 2.5 V at VR = 0 V; f = 1 MHz CD 12 15 pF at VR = 2.5 V; f = 1 MHz CD 7.5 8.5 pF 6 Capacitance If a higher surge current or peak pulse current (IPP) is needed, some protection diodes in the VESD05A4A-HS4 can also be used in parallel in order to "multiply" the performance. If two diodes are switched in parallel you get • double surge power = double peak pulse current (2 x IPPM) • half of the line inductance = reduced clamping voltage • half of the line resistance = reduced clamping voltage • double line Capacitance (2 x CD) • double Reverse leakage current (2 x IR) 5 4 6 L1 1 2 L2 3 20900 Document Number 81786 Rev. 1.4, 02-Mar-10 For technical support, please contact: [email protected] www.vishay.com 3 VESD05A4A-HS4 Vishay Semiconductors BiSy-mode (3-line Bidirectional Symmetrical protection mode) If a bipolar symmetrical protection device is needed the VESD05A4A-HS4 can also be used as a three-line protection device. Therefore three pins (example: pin 1, 3, and 5) has to be connected to the signal- or dataline (L1 to L3) and pin 3 to ground. Pin 2 and 6 must not be connected! Positive and negative voltage transients will be clamped in the same way. The clamping current from one data line through the VESD05A4A-HS4 to the ground passes one diode in forward direction and the other one in reverse direction. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances (resistances and inductances) of the protection device. Due to the same clamping levels in positive and negative direction the VESD05A4A-HS4 voltage clamping behaviour is also Bidirectional and Symmetrical (BiSy). L1 L3 5 4 6 1 2 3 L2 20901 Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified VESD05A4A-HS4 BiSy mode: each input (pin 1, 3, 4 or 5) to any other input pin connected to ground; pin 2 and 6 not connected Parameter Protection paths Reverse stand-off voltage Reverse current Reverse breakdown voltage Clamping voltage Test conditions/remarks Symbol Number of line which can be protected Nlines at IR = 0.1 µA VRWM at VR = VRWM = 5.5 V IR at IR = 1 mA VBR at IPP = 2.5 A acc. IEC 61000-4-5 VC at VR = 0 V; f = 1 MHz at VR = 2.5 V; f = 1 MHz Min. Typ. Max. Unit 3 lines 5.5 V < 0.01 0.1 µA 8.7 V 11.5 13 V CD 6 8 pF CD 5 7 pF 6.5 Capacitance www.vishay.com 4 For technical support, please contact: [email protected] Document Number 81786 Rev. 1.4, 02-Mar-10 VESD05A4A-HS4 Vishay Semiconductors Typical Characteristics (Tamb = 25 °C, unless otherwise specified) 100 8 µs to 100 % 100 % 10 80 % 1 IF (mA) IPPM 60 % 20 µs to 50 % 0.1 40 % 0.01 20 % 0% 0 10 20 20548 30 40 Time (µs) 0.001 0.5 Figure 1. 8/20 µs Peak Pulse Current Wave Form acc. IEC 61000-4-5 0.7 0.8 0.9 1 VF (V) Figure 4. Typical Forward Current IF vs. Forward Voltage VF 8 120 % Rise time = 0.7 ns to 1 ns 7 100 % 6 80 % 5 VR (V) Discharge Current IESD 0.6 20889 60 % 53 % 4 3 40 % 2 27 % 20 % 1 0 0.01 0% - 10 0 10 20 30 40 50 60 70 80 90 100 0.1 1 20890 Figure 2. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω/150 pF) 10 100 1000 10000 IR (µA) Time (ns) 20557 Figure 5. Typical Reverse Voltage VR vs. Reverse Current IR 14 15 f = 1 MHz 12 10 BiAs-mode positive surge 10 8 VC (V) CD (pF) 5 6 0 VC BiSy-mode -5 BiSy-mode 4 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) negative surge - 10 2 0 - 15 0 1 20888 2 3 4 5 6 VR (V) Figure 3. Typical Capacitance CD vs. Reverse Voltage VR Document Number 81786 Rev. 1.4, 02-Mar-10 0 1 20891 2 3 IPP (A) Figure 6. Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP For technical support, please contact: [email protected] www.vishay.com 5 VESD05A4A-HS4 Vishay Semiconductors 150 12 acc. IEC 61000-4-2 contact discharge 10 positive surge 100 positive discharge 8 50 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 4 VC-ESD (V) VC (V) 6 VC 2 - 50 BiAs-mode 0 negative discharge - 100 -2 negative surge - 150 -4 0 20892 VC-ESD 0 1 2 0 3 IPP (A) Figure 7. Typical Peak Clamping VoltageVC vs. Peak Pulse Current IPP 5000 20895 10000 15000 20000 VESD (kV) Figure 10. Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) 70 60 50 acc. IEC 61000-4-2 + 8 kV contact discharge VC-ESD (V) 40 30 20 10 0 - 10 - 20 - 30 - 10 0 10 20 30 40 50 60 70 80 90 20893 t (ns) Figure 8. Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 40 30 20 acc. IEC 61000-4-2 - 8 kV contact discharge VC-ESD (V) 10 0 - 10 - 20 - 30 - 40 - 50 - 60 - 10 0 10 20 30 40 50 60 70 80 90 20894 t (ns) Figure 9. Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) www.vishay.com 6 For technical support, please contact: [email protected] Document Number 81786 Rev. 1.4, 02-Mar-10 VESD05A4A-HS4 Vishay Semiconductors Package Dimensions in millimeters (inches): LLP1010-6L 0.125 (0.005) ref. 0.5 (0.020) exp. DAP 0 (0.000) 0.95 (0.037) 1.05 (0.041) Pin 1 marking 0.03 (0.001) 0.2 (0.008) 0.4 (0.016) 0.15 (0.006) 0.1 (0.004) 0.25 (0.010) 0.33 (0.013) 0.35 (0.014) bsc 0.7 (0.028) ref. 0.22 (0.009) exp. DAP 1.05 (0.041) 0.95 (0.037) Foot print recommendation: 0.5 (0.020) 0.05 (0.002) 0.175 (0.007) 0.35 (0.014) 0.7 (0.028) 0.35 (0.014) 0.3 (0.012) Document no.:S8-V-3906.04-004 (4) Created - Date: 17.July.2007 Rev. 4 - Date: 09. Sep. 2008 20899 Solder resist mask Solder pad Soldermask opening ± 0.03 measured middle of the package 0.22 (0.009) Document Number 81786 Rev. 1.4, 02-Mar-10 For technical support, please contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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