VISHAY VLMYG33P1Q2-GS08

VLMPG33N1P2/VLMYG33P1Q2
Vishay Semiconductors
Power SMD LED PLCC-2
FEATURES
• SMD LED with exceptional brightness
• Luminous intensity categorized
• Compatible with automatic placement
e3
equipment
• EIA and ICE standard package
• Compatible with IR reflow, vapor phase and wave
solder processes according to CECC 00802 and
J-STD-020C
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
IVmax/IVmin ≤ 1.6
• Lead (Pb)-free device
• Preconditioning: acc. to JEDEC level 2a
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• ESD-withstand voltage:
up to 2 kV according to JESD22-A114-B
19225
DESCRIPTION
The package of the VLM.G33.. is the PLCC-2.
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-2
• Product series: power
• Angle of half intensity: ± 60°
APPLICATIONS
• Automotive: backlighting in dashboards and
switches
• Telecommunication: indicator and backlighting in
telephone and fax
• Indicator and backlight for audio and video
equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
PARTS TABLE
PART
COLOR, LUMINOUS INTENSITY
TECHNOLOGY
VLMPG33N1P2-GS08
Pure green, IV = (28 to 71) mcd
AlInGaP on GaAs
VLMPG33N1P2-GS18
Pure green, IV = (28 to 71) mcd
AlInGaP on GaAs
VLMYG33P1Q2-GS08
Yellow green, IV = (45 to 112) mcd
AlInGaP on GaAs
VLMYG33P1Q2-GS18
Yellow green, IV = (45 to 112) mcd
AlInGaP on GaAs
Document Number 81335
Rev. 1.2, 10-Sep-07
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1
VLMPG33N1P2/VLMYG33P1Q2
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) VLMPG33../VLMYG33..
PARAMETER
TEST CONDITION
Reverse voltage2)
DC Forward current
SYMBOL
VALUE
VR
5
UNIT
V
Tamb ≤ 73 °C
IF
50
mA
tp ≤ 10 µs
IFSM
0.2
A
Power dissipation
PV
130
mW
Junction temperature
Tj
125
°C
Tamb
- 40 to + 100
°C
Tstg
- 40 to + 100
°C
RthJA
400
K/W
Surge forward current
Operating temperature range
Storage temperature range
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 16 mm2)
Note:
1) T
amb = 25 °C unless otherwise specified
2)
Driving LED in reverse direction is suitable for short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMPG33.., PURE GREEN
PARAMETER
TEST CONDITION
SYMBOL
MIN
IV
28
IF = 30 mA
λd
555
Peak wavelength
IF = 30 mA
λp
565
nm
Angle of half intensity
IF = 30 mA
ϕ
± 60
deg
Luminous intensity
IF = 30 mA
Dominant wavelength
PART
VLMPG33N1P2
TYP
560
MAX
UNIT
71
mcd
565
nm
Forward voltage
IF = 30 mA
VF
Reverse voltage
IR = 10 µA
VR
Temperature coefficient of VF
IF = 30 mA
TCV
-4
mV/K
Temperature coefficient of IV
IF = 30 mA
TCI
- 0.4
%/K
2
2.5
5
V
V
Note:
1) T
amb = 25 °C unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMYG33.., YELLOW GREEN
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
IF = 30 mA
VLMYG33P1Q2
IV
45
Luminous intensity
φV/IV
Luminous flux/luminous intensity
TYP.
MAX
112
3
UNIT
mcd
mlm/mcd
Dominant wavelength
IF = 30 mA
λd
Peak wavelength
IF = 30 mA
λp
Spectral bandwidth
at 50 % Irel max
IF = 30 mA
Δλ
18
nm
Angle of half intensity
IF = 30 mA
ϕ
± 60
deg
566
577
nm
nm
Forward voltage
IF = 30 mA
VF
1.7
Reverse voltage
IR = 10 µA
VR
5
Temperature coefficient of VF
IF = 30 mA
TCV
-4
mV/K
Temperature coefficient of IV
IF = 30 mA
TCI
- 0.04
%/K
2.0
2.5
V
V
Note:
1)
Tamb = 25 °C unless otherwise specified
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Document Number 81335
Rev. 1.2, 10-Sep-07
VLMPG33N1P2/VLMYG33P1Q2
Vishay Semiconductors
LUMINOUS INTENSITY CLASSIFICATION
GROUP
COLOR CLASSIFICATION
LUMINOUS INTENSITY (MCD)
STANDARD
L
M
N
P
Q
OPTIONAL
MIN
MAX
1
2
1
2
1
2
1
2
1
2
11.2
14.0
18.0
22.4
28.0
35.5
45.0
56.0
71.0
90.0
14.0
18.0
22.4
28.0
35.5
45.0
56.0
71.0
90.0
112.0
Note:
Luminous intensity is tested at a current pulse duration of 25 ms and
an accuracy of ± 11 %.
The above type Numbers represent the order groups which include
only a few brightness groups. Only one group will be shipped on
each reel (there will be no mixing of two groups on each reel).
In order to ensure availability, single brightness groups will not be
orderable.
In a similar manner for colors where wavelength groups are
measured and binned, single wavelength groups will be shipped on
any one reel.
DOMINANT WAVELENGTH (NM)
GROUP
PURE GREEN
YELLOW GREEN
MIN
MAX
MIN
MAX
0
555
559
1
558
561
2
560
563
3
562
565
5
566
569
6
568
571
7
570
573
8
572
575
9
574
577
4
Note:
Wavelengths are tested at a current pulse duration of 25 ms and an
accuracy of ± 1 nm.
CROSSING TABLE
VISHAY
OSRAM
VLMPG33N1P2
VLMYG33P1Q2
LPT675N1P2
LGT676
In order to ensure availability, single wavelength groups will not be
orderable.
100
IF - Forward Current (mA)
90
80
70
60
RthJA = 400 K/W
50
40
30
20
10
0
10
16784
25
50
75
100
125
Tamb - Ambient Temperature (°C)
Figure 1. Forward Current vs. Ambient Temperature
Document Number 81335
Rev. 1.2, 10-Sep-07
Δ VF - Change of Forward Voltage (mV)
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
600
pure green
500
400
30 mA
300
50 mA
200
100
0
- 100
10 mA
- 200
- 300
- 50
18615
- 25
0
25
50
75
100
Tamb - Ambient Temperature (°C)
Figure 2. Change of Forward Voltage vs. Ambient Temperature
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VLMPG33N1P2/VLMYG33P1Q2
Vishay Semiconductors
10°
20°
100
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
IF - Forward Current (mA)
IVrel - Relative Luminous Intensity
0°
Pure green
Yellowgreen
10
80°
1
0.6
0.4
0.2
0
0.2
0.4
0.6
95 10319_1
10
1.2
pure green
1.0
0.8
0.6
0.4
0.2
0.0
550
570
590
- Wavelength (nm)
yellow green
1.0
0.8
0.6
0.4
0.2
540
560
1
580
600
620
- Wavelength (nm)
Figure 5. Relative Luminous Intensity vs. Wavelength
10
100
IF - Forward Current ( mA )
Figure 7. Rel. Luminous Intensity vs. Forward Current
IV rel - Relative Luminous Intensity
IV rel - Relative Luminous Intensity
0.1
20393
1.2
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4
1
610
Figure 4. Relative Luminous Intensity vs. Wavelength
18647
Pure Green
Yellowgreen
0.01
530
18648
0.0
520
VF - Forward Voltage (V)
Figure 6. Forward Current vs. Forward Voltage
IVrel - Relative Luminous Intensity
IV rel - Relative Luminous Intensity
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
510
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
20392
3.0
pure green
2.5
2.0
1.5
1.0
0.5
0.0
- 50
18616
- 25
0
25
50
75
100
Tamb - Ambient Temperature (°C)
Figure 8. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 81335
Rev. 1.2, 10-Sep-07
VLMPG33N1P2/VLMYG33P1Q2
8
Δ λ d - Change of Dom. Wavelength (nm)
Δ λ d - Change of Dom. Wavelength (nm)
Vishay Semiconductors
pure green
6
4
2
0
-2
-4
-6
-8
- 50
18617
- 25
0
25
50
75
100
Tamb - Ambient Temperature (°C)
8
yellow green
6
4
2
0
-2
-4
-6
-8
- 50
- 25
Figure 9. Change of Dominant Wavelength vs.
Ambient Temperature
0
25
50
75
100
Tamb - Ambient Temperature (°C)
18620
Figure 11. Change of Dominant Wavelength vs.
Ambient Temperature
IV rel - Relative Luminous Intensity
2.5
yellow green
2.0
1.5
1.0
0.5
0
- 50
18619
- 25
0
25
50
75
100
Tamb - Ambient Temperature (°C)
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
PACKAGE DIMENSIONS in millimeters
3.5 ± 0.2
0.9
1.75 ± 0.10
technical drawings
according to DIN
specifications
Mounting Pad Layout
Pin identification
area covered with
solder resist
4
2.6 (2.8)
A
2.8
C
2.2
+ 0.15
1.2
4
1.6 (1.9)
?
3
2.4
+ 0.15
Drawing-No.: 6.541-5025.01-4
Issue: 8; 22.11.05
95 11314-1
Document Number 81335
Rev. 1.2, 10-Sep-07
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VLMPG33N1P2/VLMYG33P1Q2
Vishay Semiconductors
METHOD OF TAPING/POLARITY AND TAPE
AND REEL
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS18
(= 8000 PCS.) PREFERRED
SMD LED (VLM3 - SERIES)
Vishay’s LEDs in SMD packages are available in an
antistatic 8 mm blister tape (in accordance with
DIN IEC 40 (CO) 564) for automatic component
insertion. The blister tape is a plastic strip with
impressed component cavities, covered by a top tape.
10.4
8.4
120°
4.5
3.5
13.00
12.75
2.5
1.5
62.5
60.0
Identification
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
Adhesive Tape
Blister Tape
14.4 max.
321
329
18857
Figure 14. Reel Dimensions - GS18
SOLDERING PROFILE
Component Cavity
IR Reflow Soldering Profile for lead (Pb)-free soldering
94 8670
Preconditioning acc. to JEDEC Level 2a
300
TAPING OF VLM.3..
2.2
2.0
5.75
5.25
3.6
3.4
4.0
3.6
8.3
7.7
Temperature (°C)
3.5
3.1
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp down 6 °C/s
max. ramp up 3 °C/s
50
1.85
1.65
1.6
1.4
4.1
3.9
0
0.25
4.1
3.9
0
2.05
1.95
50
100
150
Time (s)
200
300
max. 2 cycles allowed
19885
94 8668
250
Figure 15. Vishay Leadfree Reflow Soldering Profile
(acc. to J-STD-020C)
Figure 12. Tape Dimensions in mm for PLCC-2
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS08
(= 1500 PCS.)
TTW Soldering
300
948626-1
(acc. to CECC00802)
5s
Lead Temperature
250
4.5
3.5
2.5
1.5
Temperature (°C)
10.0
9.0
120°
13.00
12.75
63.5
60.5
Identification
200
second
wave
235 °C...260 °C
first wave
full line: typical
dotted line: process limits
ca. 2 K/s
ca. 200 K/s
150
100 °C...130 °C
100
ca. 5 K/s
2 K/s
50
forced cooling
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
0
0
50
100
150
200
250
Time (s)
180
178
Figure 16. Double Wave Soldering of Opto Devices (all Packages)
14.4 max.
94 8665
Figure 13. Reel Dimensions - GS08
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Document Number 81335
Rev. 1.2, 10-Sep-07
VLMPG33N1P2/VLMYG33P1Q2
Vishay Semiconductors
BAR CODE PRODUCT LABEL
106
A
H
VISHAY
37
B
C
D
E
F
G
20138
A) Type of component
B) Manufacturing plant
C) SEL - selection code (bin):
e.g.: N1 = code for luminous intensity group
3 = code for color group
D) Date code year/week
E) Day code (e.g. 3: Wednesday)
F) Batch no.
G) Total quantity
H) Company code
RECOMMENDED METHOD OF STORAGE
Dry box storage is recommended as soon as the
aluminium bag has been opened to prevent moisture
absorption. The following conditions should be
observed, if dry boxes are not available:
• Storage temperature 10 °C to 30 °C
• Storage humidity ≤ 60 % RH max.
After more than 672 h under these conditions moisture
content will be too high for reflow soldering.
In case of moisture absorption, the devices will recover
to the former condition by drying under the following
condition:
192 h at 40 °C + 5 °C/ - 0 °C and < 5 % RH (dry air/
nitrogen) or
96 h at 60 °C + 5 °C and < 5 % RH for all device
containers or
24 h at 100 °C + 5 °C not suitable for reel or tubes.
An EIA JEDEC standard JESD22-A112 level 2a label is
included on all dry bags.
L E V E L
CAUTION
DRY PACKING
The reel is packed in an anti-humidity bag to protect the
devices from absorbing moisture during transportation
and storage.
Aluminum bag
This bag contains
MOISTURE –SENSITIVE DEVICES
2a
1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH)
2. After this bag is opened devices that will be subjected to infrared reflow,
vapor-phase reflow, or equivalent processing (peak package body temp.
260°C) must be:
a) Mounted within 672 hours at factory condition of < 30°C/60%RH or
b) Stored at <10% RH.
3. Devices require baking before mounting if:
a)
Humidity Indicator Card is >10% when read at 23°C + 5°C or
b)
2a or 2b is not met.
Label
4. If baking is required, devices may be baked for:
192 hours at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen)
or
o
or
96 hours at 60±5 Cand <5%RH
For all device containers
24 hours at 100±5°C
Not suitable for reels or tubes
Bag Seal Date: ______________________________
(If blank, see bar code label)
Reel
Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
19786
Example of JESD22-A112 level 2a label
15973
FINAL PACKING
The sealed reel is packed into a cardboard box. A
secondary cardboard box is used for shipping purposes.
ESD PRECAUTION
Proper storage and handling procedures should be
followed to prevent ESD damage to the devices
especially when they are removed from the antistatic
shielding bag. Electro-static sensitive devices warning
labels are on the packaging.
VISHAY SEMICONDUCTORS STANDARD
BAR CODE LABELS
The Vishay Semiconductors standard bar code labels
are printed at final packing areas. The labels are on
each packing unit and contain Vishay Semiconductors
specific data.
Document Number 81335
Rev. 1.2, 10-Sep-07
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7
VLMPG33N1P2/VLMYG33P1Q2
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,
damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 81335
Rev. 1.2, 10-Sep-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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